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    2025
  1. K. Nihei, T. Uchimura, J. Han, K. Gas, S. Kanai, H. Ohno, and S. Fukami, "Temperature dependence of current-induced switching in thin epitaxial films of Mn3Sn: Revealing the dominant role of spin–orbit torque," Applied Physics Letters, vol.127, pp. 132406(5 pages), September 2025. DOI:10.1063/5.0294438
  2. T. Dohi, M. Bhukta, F. Kammerbauer, V.K. Bharadwaj, R. Zarzuela, A. Sud, M.-A. Syskaki, D.M. Tran, T. Denneulin, S. Wintz, M. Weigand, S. Finizio, J. Raabe, R. Fromter, R.E.D.-Borkowski, J. Sinova, and M. Klaui, "Observation of a non-reciprocal skyrmion Hall effect of hybrid chiral skyrmion tubes in synthetic antiferromagnetic multilayers," Nature Communications, vol. 16, pp. 8285(11 pages), September 2025. DOI:10.1038/s41467-025-63759-7
  3. S. T. Konakanchi, S. Banerjee, M.M. Rahman, Y. Yamane, S. Kanai, S. Fukami, and P. Upadhyaya, "Electrically Tunable Picosecond-Scale Octupole Fluctuations in Chiral Antiferromagnets," Physical Review Letters, vol. 135, pp. 136704(8 pages), September 2025. DOI:10.1103/w2wj-c9jx
  4. 菅澤 昌之, 深見 俊輔, "センサ, AI, デザイン思考を用いた未来創造授業－産学連携におけるモノづくりからコトづくり授業へ－," 工学教育, vol. 73, pp. 5_75-5_80, September 2025. DOI:10.4307/jsee.73.5_75
  5. T. Kinoshita, J.-Y. Yoon, N. Caçoilo, R. Mochizuki, H. Kaneko, S. Kanai, H, Ohno, and S. Fukami, "Size dependence of the properties of synthetic-antiferromagnet-based stochastic magnetic tunnel junctions for probabilistic computing," Applied Physics Letters, vol.127, pp. 102408(6 pages), September 2025. DOI:10.1063/5.0286454
  6. Y. Takeuchi, Y. Sato, Y. Yamane, J-Y. Yoon, Y. Kanno, T. Uchimura, K.V.De Zoysa, J. Han, S. Kanai, J. Ieda, H. Ohno, and S. Fukami, "Electrical coherent driving of chiral antiferromagnet," Science, vol. 389, pp. 830-834, August 2025. DOI:10.1126/science.ado1611
  7. Y.K. Edathumkandy, K. Das, K. Gas, D. Sztenkiel, D. Hommel, H. Przybylinska, and M. Sawicki, "Ferromagnetic resonance in a magnetically dilute percolating ferromagnet: An experimental and theoretical study," Physical Review B, vol. 112, pp. 024424(14 pages), July 2025. DOI:10.1103/5rzr-478b
  8. R.R. Chowdhury, D. Kurebayashi, J. Lustikova , O.A.Tretiakov, S. Fukami, R.P. Singh, and S. DuttaGupta, "Unraveling effects of competing interactions and frustration in vdW ferromagnetic Fe3GeTe2 nanoflake devices," Applied Physics Letters, vol. 127, pp. 012409(6 pages), July 2025. DOI:10.1063/5.0262983
  9. S. Moriya, Y. Iida, A. Lagarrigue, K.V. De Zoysa, M. Ishikawa, H. Yamamoto, S. Fukami, and S. Sato, "Event-Driven Inference with Spiking Neural Networks Enhanced by Non-Volatile Analog Spin-Orbit Torque Devices," (IEEE)2025 IEEE International Symposium on Circuits and Systems (ISCAS), June 2025. DOI:10.1109/ISCAS56072.2025.11043718
  10. A. Sud, K. Yamamoto, S. Iihama, K. Ishibashi, S. Fukami, H. Kurebayashi, and S. Mizukami, "Electrically Controlled Nonlinear Magnon-Magnon Coupling in a Synthetic Antiferromagnet," Physical Review Letters, vol. 134, pp. 246704(7 pages), June 2025. DOI:10.1103/sc6y-rxbg
  11. S.P. Bommanaboyena, C. Muller, M. Jarosova, K. Wolk, S. Telkamp, P. Zeng, F. Krizek, T. Uchimura, A. Badura, K. Olejnik, D. Scheffler, K. Beranova, S. Banerjee, M. Ledinsky, H. Reichlova, T. Jungwirth, L. Horak, and D. Kriegner, "Single-crystalline CrSb(0001) thin films grown by dc magnetron co-sputtering," Physical Review Materials, vol. 9, pp. 064402(9 pages), June 2025. DOI:10.1103/PhysRevMaterials.9.064402
  12. Q. Shao, Z. Wang, Y. Zhou, S. Fukami, D. Querlioz, and L.O.Chua, "Spintronic memristors for computing," npj Spintronics, vol. 3, pp. 16(23 pages), May 2025. DOI:10.1038/s44306-025-00078-z
  13. Y. Yamane, Y. Araki, and S. Fukami, "Interfacial Dzyaloshinskii-Moriya interaction in nonmagnetic/noncollinear-antiferromagnetic bilayers," Physical Review B, vol. 111, pp. 144412(9 pages), April 2025. DOI:10.1103/PhysRevB.111.144412
  14. K. Gas, J.-Y. Yoon, Y. Sato, H. Kubota, P. Dluzewski, S. Kret, J.Z. Domagala, Y.K. Edathumkandy, Y. Takeuchi, S. Kanai, H. Ohno, M. Sawicki, and S. Fukami, "Magnetic phase diagram of Mn3+xSn1−x epitaxial thin films: Extending the anomalous Hall effect to low temperatures via intrinsic alloying," APL Materials, vol. 13, pp. 041105(8 pages), April 2025. DOI:10.1063/5.0254918
  15. T. Uchimura, J. Han, P. Tang, J.-Y. Yoon, Y. Takeuchi, Y. Yamane, S. Kanai, G.E.W. Bauer, H. Ohno, and S. Fukami, "Unconventional Spin Hall Magnetoresistance in Noncollinear Antiferromagnet/Heavy Metal Stacks," Physical Review Letters, vol. 134, pp. 096701(7 pages), March 2025. DOI:10.1103/PhysRevLett.134.096701
  16. J. Han, J.-Y. Yoon, H. Ohno, and S. Fukami, "Unconventional responses in non-collinear antiferromagnets," Newton (Cell Press), vol. 1, pp. 100012(9 pages), March 2025. DOI:10.1016/j.newton.2025.100012
  17. J.-Y. Yoon, Y. Takeuchi, R. Takechi, J. Han, T. Uchimura, Y. Yamane, S. Kanai, J. Ieda, H. Ohno, and S. Fukami, "Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure," Nature Communications, vol. 16, pp. 1171(8 pages), February 2025. DOI:10.1038/s41467-025-56157-6
  18. D. Sztenkiel, K. Gas, N.G. Szwacki, M. Foltyn, C. Śliwa, T. Wojciechowski, J.Z. Domagala, D. Hommel, M. Sawicki, and T. Dietl, "Electric-field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling," Communications Materials, vol. 6, pp. 16(13 pages), January 2025. DOI:10.1038/s43246-024-00711-0
    19. 2024
  19. S. Chiba, Y. Marui, H. Ohno, and S. Fukami, "Comparative Study of Current-Induced Torque in Cr/CoFeB/MgO and W/CoFeB/MgO," Nano Letters, vol. 24, pp. 14028-14033, October 2024. DOI:10.1021/acs.nanolett.4c03809
  20. B. Dieny, S. Aggarwal, V.B. Naik, S. Couet, T. Coughlin, S. Fukami, K. Garello, J. Guedj, J.A.C. Incorvia, L. Lebrun, K.-J. Lee, D. Leonelli, Y. Noh, S. Salimy, S. Soss, L. Thomas, W. Wang, and D.C. Worledge, "Impact of External Magnetic Fields on STT-MRAM: An Application Note," IEEE Electron Devices Magazine, vol. 2, pp. 52-59, September 2024. DOI:10.1109/MED.2024.3442086
  21. K.P. Kluczyk, K. Gas, M.J. Grzybowski, P. Skupiński, M.A. Borysiewicz, T. Fąs, J. Suffczyński, J.Z. Domagala, K. Grasza, A. Mycielski, M. Baj, K.H. Ahn, K. Výborný, M. Sawicki, and M.G.-Borysiewicz, "Coexistence of anomalous Hall effect and weak magnetization in a nominally collinear antiferromagnet MnTe," Physical Review B, vol. 110, pp. 155201(12pages), October 2024. DOI:10.1103/PhysRevB.110.155201
  22. J.A.M.-Rodarte, K. Gas, M.H-Zaldívar, D. Hommel, M. Sawicki, and M.H.D. Guimarães, “Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices," Applied Physics Letters, vol. 125, pp. 152404(6 pages), October 2024. DOI:10.1063/5.0218364
  23. M. Elyasi, S. Kanai, H. Ohno, S. Fukami, and G.E.W. Bauer, "Effect of nonlinear magnon interactions on stochastic magnetization switching," Physical Review B, vol. 110, pp. 094433(11 pages), September 2024. DOI:10.1103/PhysRevB.110.094433
  24. K. Djeghdi, D. Karpov, S.N. Abdollahi, K. Godlewska, R. Iseli, M. Holler, C. Donnelly, T. Yuasa, H. Sai, U.B. Wiesner, U. Steiner, B.D. Wilts, M. Musya, S. Fukami, H. Ohno, A. Diaz, J. Llandro, and I. Gunkel, "Block Copolymer-Directed Single-Diamond Hybrid Structures Derived from X-ray Nanotomography," ACS Nano, vol. 18, pp. 26503-26513, September 2024. DOI:10.1021/acsnano.3c10669
  25. A. Ciechan, P. Dłużewski, S. Kret, K. Gas, L. Scheffler, C. Gould, J. Kleinlein, M. Sawicki, L.W. Molenkamp, and P. Bogusławski, "Coexistence of antiferromagnetic cubic and ferromagnetic tetragonal polymorphs in epitaxial CuMnSb films," Physical Review B, vol. 110, pp. 014436(15 pages), July 2024. DOI:10.1103/PhysRevB.110.014436
  26. R. Sharma, T. Ngo, E. Raimondo, A. Giordano, J. Igarashi, B. Jinnai, S. Zhao, J. Lei, Y.-X. Guo, G. Finocchio, S. Fukami, H. Ohno, and H. Yang," Nanoscale spin rectifiers for harvesting ambient radiofrequency energy," Nature Electronics, vol. 7, pp. 653–661, July 2024. DOI:10.1038/s41928-024-01212-1
  27. D. Karpov, K. Djeghdi, M. Holler, S.N. Abdollahi, K. Godlewska, C. Donnelly, T. Yuasa, H. Sai, U.B. Wiesner, B.D. Wilts, U. Steiner, M. Musya, S. Fukami, H. Ohno, I. Gunkel, A. Diaz, and J. Llandro, "High-resolution three-dimensional imaging of topological textures in nanoscale single-diamond networks," Nature Nanotechnology, July 2024. DOI:10.1038/s41565-024-01735-w
  28. M. Kawahara, Y. Abe, K. Takano, F.J. Heremans, J. Ishihara, S.E. Sullivan, C. Vorwerk, V. Somjit, C.P. Anderson, G. Wolfowiczwas, M. Kohda, S. Fukami, G. Galli, D.D. Awschalom, H. Ohno, and S. Kanai, "T Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl2O4," Applied Physics Express, vol. 17, pp. 072004(4 pages), July 2024. DOI:10.35848/1882-0786/ad59f4
  29. R. Ota, K. Kobayashi, K. Hayakawa, S. Kanai, K.Y. Çamsarı, H. Ohno, and S. Fukami, "Voltage-insensitive stochastic magnetic tunnel junctions with double free layers," Applied Physics Letters, vol.125, pp. 022406(6 pages), July 2024. DOI:10.1063/5.0219606
  30. H. Kaneko, R. Ota, K. Kobayashi, S. Kanai, M. Elyasi, G.E.W. Bauer, H. Ohno, and S. Fukami, "Temperature dependence of the properties of stochastic magnetic tunnel junction with perpendicular magnetization," Applied Physics Express, vol. 17, pp. 053001(4 pages), May 2024. DOI:10.35848/1882-0786/ad43b0
  31. K. Selcuk, S. Kanai, R. Ota, H. Ohno, S. Fukami, and K.Y. Camsari, "Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets," Physical Review Applied, vol. 21, pp. 054002(12 pages), May 2024. DOI:10.1103/PhysRevApplied.21.054002
  32. J. Han, T. Uchimura, Y. Araki, J.-Y. Yoon, Y. Takeuchi, Y. Yamane, S. Kanai, J. Ieda, H. Ohno, and S. Fukami, "Room-temperature flexible manipulation of the quantum-metric structure in a topological chiral antiferromagnet," Nature Physics, vol. 20, pp. 1110–1117, April 2024. DOI:10.1038/s41567-024-02476-2
  33. M. Gołębiewski, R. Hertel, M. d’Aquino, V. Vasyuchka, M. Weiler, P. Pirro, M. Krawczyk, S. Fukami, H. Ohno, and J. Llandro, "Collective Spin-Wave Dynamics in Gyroid Ferromagnetic Nanostructures," ACS Applied Materials and Interfaces, vol. 16, pp. 22177-22188, April 2024. DOI:10.1021/acsami.4c02366
  34. N.S. Singh, K. Kobayashi, Q. Cao, K. Selcuk, T. Hu, S. Niazi, N.A. Aadit, S. Kanai, H. Ohno, S. Fukami, and K.Y. Camsari, "CMOS plus stochastic nanomagnets enabling heterogeneous computers for probabilistic inference and learning," Nature Communications, vol. 15, pp. 2685(9 pages), March 2024. DOI:10.1038/s41467-024-46645-6
  35. M.J. Grzybowski, C. Autieri, J. Domagala, C. Krasucki, A. Kaleta, S. Kret, K. Gas, M. Sawicki, R. Bożek, J. Suffczyński, and W. Pacuski, "Wurtzite vs. rock-salt MnSe epitaxy: electronic and altermagnetic properties," Nanoscale, vol. 16, pp. 6259–6267, March 2024. DOI:10.1039/D3NR04798A
  36. M. Bhukta, T. Dohi, V.K. Bharadwaj, R. Zarzuela, M.-A. Syskaki, M. Foerster, M.A. Niño, J. Sinova, R. Frömter, and M. Kläui, "Homochiral antiferromagnetic merons, antimerons and bimerons realized in synthetic antiferromagnets," Nature Communications, vol. 15, pp. 1641(10 pages), February 2024. DOI:10.1038/s41467-024-45375-z
  37. M.-A. Syskaki, T. Dohi, B. Bednarz, S.O. Filnov, S.A. Kasatikov, M. Bhukta, A. Smekhova, R. Pachat, J.W. van der Jagt, S. Ono, D. Ravelosona, J. Langer, M. Kläui, L.H. Diez, and G. Jakob, "Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets," Applied Physics Letters, vol. 124, pp. 082408(7 pages), February 2024. DOI:10.1063/5.0198750
  38. J. Igarashi, B. Jinnai, K. Watanabe, T. Shinoda, T. Funatsu, H. Sato, S. Fukami, and H. Ohno, "Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities," npj Spintronics, vol. 2, pp. 1(9pages), January 2024. DOI:10.1038/s44306-023-00003-2
    39. 2023
  39. T. Shinoda, J. Igarashi, B. Jinnai, S. Fukami, and H. Ohno, "Pitch Scaling Prospect of Ultra-Small Magnetic Tunnel Junctions for High-Density STT-MRAM: Effects of Magnetostatic Interference from Neighboring Bits," IEEE Electron Device Letters, vol. 45, pp. 184-187, December 2023. DOI:10.1109/LED.2023.3345743
  40. D. Abdelrahman, R. Iseli, M. Musya, B. Jinnai, S. Fukami, T. Yuasa, H. Sai, U.B. Wiesner, M. Saba, B.D. Wilts, U. Steiner, J. Llandro, and I. Gunkel, "Directed Self-Assembly of Diamond Networks in Triblock Terpolymer Films on Patterned Substrates," ACS Applied Materials and Interfaces, vol. 15, pp. 57981-57991, November 2023. DOI:10.1021/acsami.3c10619
  41. B. Chen, M. Zeng, K.H. Khoo, D. Das, X. Fong, S. Fukami, S. Li, W. Zhao, S.S.P. Parkin, S.N. Piramanayagam, and S.T. Lim, "Spintronic devices for high-density memory and neuromorphic computing – A review," Materials Today, vol. 70, pp. 193-217, November 2023. DOI:10.1016/j.mattod.2023.10.004
  42. Y. Marui, M. Kawaguchi, S. Sumi, H. Awano, K. Nakamura, and M. Hayashi, “Spin and orbital Hall currents detected via current-induced magneto-optical Kerr effect in V and Pt ," Physical Review B, vol. 108, pp. 144436(11 pages), October 2023. DOI:10.1103/PhysRevB.108.144436
  43. T. Dohi, M. Weißenhofer, N. Kerber, F. Kammerbauer, Y. Ge, K. Raab, J. Zázvorka, M.-A. Syskaki, A. Shahee, M. Ruhwedel, T. Böttcher, P. Pirro, G. Jakob, U. Nowak, and M. Kläui, "Enhanced thermally-activated skyrmion diffusion with tunable effective gyrotropic force," Nature Communications, vol. 14, pp. 5424(10 pages), September 2023. DOI:10.1038/s41467-023-40720-0
  44. J.-Y. Yoon, P. Zhang, C.-T. Chou, Y. Takeuchi, T. Uchimura, J.T. Hou, J. Han, S. Kanai, H. Ohno, S. Fukami, and L. Liu, "Handedness anomaly in a non-collinear antiferromagnet under spin-orbit torque," Nature Materials, vol. 22, pp. 1106-1113, August 2023. DOI:10.1038/s41563-023-01620-2
  45. A-S. Koshikawa, J. Llandro, M. Ohzeki, S. Fukami, H. Ohno, and N. Leo, "Magnetic order in nanoscale gyroid networks," Physical Review B vol. 108, 024414 (10 pages), June 2023. DOI:10.1103/PhysRevB.108.024414
  46. H. Masuda, Y. Yamane, T. Seki, K. Raab, T. Dohi, R. Modak, K. Uchida, J. Ieda, M. Klaui, and K. Takanashi, "Magnetization switching process by dual spin-orbit torque in interlayer exchange-coupled systems," Applied Physics Letters vol. 122, 162402(7 pages), April 2023. DOI:10.1063/5.0140328
  47. Y. Sato, Y. Takeuchi, Y. Yamane, J. -Y. Yoon, S. Kanai, J. Ieda, H. Ohno and S. Fukami,"Thermal stability of non-collinear antiferromagnetic Mn3Sn nanodot," Applied Physics Letters vol. 122, 122404(6 pages), March 2023. DOI:10.1063/5.0135709
  48. J. Han, R. Cheng, L. Liu, H. Ohno and S. Fukami, "Coherent antiferromagnetic spintronics," Nature Materials vol. 22 , pp. 684-695 , March 2023. DOI:10.1038/s41563-023-01492-6
  49. S. Chowdhury, A. Grimaldi, N. A. Aadit, S. Niazi, M. Mohseni, S. Kanai, H. Ohno, S. Fukami, L. Theogarajan, G. Finocchio, S. Datta, and K. Y. Camsari, "A full-stack view of probabilistic computing with p-bits: devices, architectures and algorithms," IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 9, (11 pages), March 2023. DOI:10.1109/JXCDC.2023.3256981
  50. M. Shinozaki, J. Igarashi, S. Iwakiri, T. Kitada, K. Hayakawa, B. Jinnai, T. Otsuka, S. Fukami, K. Kobayashi, and H. Ohno,"Nonlinear conductance in nanoscale CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis," Physical Review B vol. 107, 094436(8 pages), February 2023. DOI:10.1103/PhysRevB.107.094436
    51. 2022
  51. K. Kobayashi, K. Hayakawa, J. Igarashi, W. A. Borders, S. Kanai, H. Ohno and S. Fukami, "External-Field-Robust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling," Physical Review Applied vol. 18, 054085(9 pages), November 2022. DOI:10.1103/PhysRevApplied.18.024075
  52. J. Gibbons, T. Dohi, V. P. Amin, F. Xue, H. Ren, J.-W. Xu, H. Arava, S. Shim, H. Saglam, Y. Liu, J. E. Pearson, N. Mason, A. K. Petford-Long, P. M. Haney, M. D. Stiles, E. E. Fullerton, A. D. Kent, S. Fukami, and A. Hoffmann, "Large Exotic Spin Torques in Antiferromagnetic Iron Rhodium," Physical Review Applied vol. 18, 024075(12 pages), August 2022. DOI:10.1103/PhysRevApplied.18.054085
  53. R. R. Chowdhury, S. DuttaGupta, C. Patra, A. Kataria, S. Fukami, and R. P. Singh, "Anisotropic magnetotransport in the layered antiferromagnet TaFe1.25Te3," Physical Review Materials vol. 6, 084408(8 pages) August 2022. DOI:10.1103/PhysRevMaterials.6.084408
  54. T. Funatsu, S. Kanai, J. Ieda, S. Fukami, and H. Ohno, "Local bifurcation with spin-transfer torque in superparamagnetic tunnel junctions," Nature Communications vol. 13, 4079(8 pages) July 2022. DOI:10.1038/s41467-022-31788-1
  55. H. Masuda, T. Seki, Y. Yamane, R. Modak, K. Uchida, J. Ieda, Y.-C. Lau, S. Fukami, and K. Takanashi, "Large Antisymmetric Interlayer Exchange Coupling Enabling Perpendicular Magnetization Switching by an In-Plane Magnetic Field," Physical Review Applied vol. 17, 054036(9 pages), May 2022. DOI:10.1103/PhysRevApplied.17.054036
  56. T. Uchimura, J. Yoon, Y. Sato, Y. Takeuchi, S. Kanai, R. Takechi, K. Kishi, Y. Yamane, S. DuttaGupta, J. Ieda, H. Ohno, and S. Fukami, "Observation of domain structure in non-collinear antiferromagnetic Mn3Sn thin films by magneto-optical Kerr effect," Applied Physics Letters vol. 120, 172405 (5 pages), April 2022. DOI: 10.1063/5.0089355
  57. Y. Yamane, S. Fukami, and J. Ieda, "Theory of Emergent Inductance with Spin-Orbit Coupling Effects," Physical Review Letters vol. 128, 147201(6 pages), April 2022. DOI:10.1103/PhysRevLett.128.147201
  58. S. Kanai, F. J. Heremans, H. Seo, G. Wolfowicz, C. P. Anderson, S. E. Sullivan, M. Onizhuk, G. Galli, D. D. Awschalom, and H. Ohno, "Generalized scaling of spin qubit coherence in over 12,000 host materials," Proceedings of National Academy of Science of the United States of America vol. 119, e2121808119 (8 pages) April 2022. DOI:10.1073/pnas.2121808119
  59. D. Kumar, T. Jin, R. Sbiaa, M. Klaui, S. Bedanta, S. Fukami, D. Ravelosona, S. Yang, X. Liu, and S.N. Piramanayagam, "Domain wall memory: Physics, materials, and devices," Physics Reports vol. 958, pp. 1-35, March 2022. DOI:10.1016/j.physrep.2022.02.001
  60. Y. Takeuchi, R. Okuda, J. Igarashi, B. Jinnai, T. Saino, S. Ikeda, S. Fukami and H. Ohno, "Nanometer-thin L10-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties," Applied Physics Letters vol. 120, 052404 (5 pages), February 2022. DOI:10.1063/5.0077874
  61. J. Kaiser, W. A. Borders, K. Y. Camsari, S. Fukami, H. Ohno, and S.Datta, "Hardware-Aware In Situ Learning Based on Stochastic Magnetic Tunnel Junctions," Physical Review Applied vol. 17, 014016 (12 pages), January 2022. DOI:10.1103/PhysRevApplied.17.014016
  62. R. R. Chowdhury, C. Patra, S. DuttaGupta, S. Satheesh, S. Dan, S. Fukami, and R. P. Singh, "Modification of unconventional Hall effect with doping at the nonmagnetic site in a two-dimensional van der Waals ferromagnet," Physical Review Materials vol. 6, 014002 (9 pages), January 2022. DOI:10.1103/PhysRevMaterials.6.014002
    63. 2021
  63. Y. Takeuchi, E. C. I. Enobio, B. Jinnai, H. Sato, S. Fukami, and H.Ohno, "Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions," Applied Physics Letters vol. 119, 242403 (5 pages), December 2021. DOI:10.1063/5.0072957
  64. M. Zahedinejad, H. Fulara, R. Khymyn, A. Houshang, M. Dvornik, S. Fukami, S. Kanai, H. Ohno, and J. Akerman, "Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing," Nature Materials, vol. 21, pp. 81-87, November 2021. DOI:10.1038/s41563-021-01153-6
  65. K. Kobayashi, W. A. Borders, S. Kanai, K. Hayakawa, H. Ohno, and S. Fukami, "Sigmoidal curves of stochastic magnetic tunnel junctions with perpendicular easy axis," Applied Physics Letters vol. 119, 132406 (5 pages), September 2021. DOI:10.1063/5.0065919
  66. R. Roy Chowdhury, S. DuttaGupta, C. Patra, O. A. Tretiakov, S. Sharma, S. Fukami, H. Ohno, and R. P. Singh, "Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2," Scientific Reports vol. 11, 14121 (10 pages), July 2021. DOI:10.1038/s41598-021-93402-6
  67. S. Iihama, Q. Remy, J. Igarashi, G. Malinowski, M. Hehn, and S. Mangin, "Spin-transport Mediated Single-shot All-optical Magnetization Switching of Metallic Films," Journal of the Physical Society of Japan vol. 90, 081009 (13 pages), June 2021. DOI:10.7566/JPSJ.90.081009
  68. T. Dohi, S. Fukami, and H. Ohno, "Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction," Physical Review B vol. 103, 214450 (9 pages), June 2021. DOI:10.1103/PhysRevB.103.214450
  69. J.-Y. Yoon, Y. Takeuchi, S. DuttaGupta, Y. Yamane, S. Kanai, J. Ieda, H. Ohno, and S. Fukami, "Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn3+xSn1-x thin films," AIP Advances vol. 11, 065318 (6 pages), June 2021. DOI:10.1063/5.0043192
  70. R. Sharma, R. Mishra, T. Ngo, Y. Guo, S. Fukami, H. Sato, H. Ohno, and H. Yang, "Electrically connected spin-torque oscillators array for 2.4-GHz WiFi band transmission and energy harvesting," Nature Communications vol. 12, 2924 (10 pages), May 2021. DOI:10.1038/s41467-021-23181-1
  71. Y. Takeuchi, Y. Yamane, J. Yoon, R. Itoh, B. Jinnai, S. Kanai, J. Ieda, S. Fukami, and H. Ohno, "Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque," Nature Materials, vol. 20, pp. 1364-1370, May 2021. DOI:10.1103/10.1038/s41563-021-01005-3
  72. Q. Shao, P. Li, L. Liu, H. Yang, S. Fukami, A. Razavi, H. Wu, F. Freimuth, Y. Mokrousov, M. D. Stiles, S. Emori, A. Hoffmann, J. Akerman, K. Roy, J. Wang, S. Yang, K. Garellob, and W. Zhang, "Roadmap of spin-orbit torques," IEEE Transactions on Magnetics, vol. 57, 800439(39 pages), May 2021. DOI:10.1109/TMAG.2021.3078583
  73. K. Y. Camsari, M. M. Torunbalci, W. A. Borders, H. Ohno, and S. Fukami, "Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits," Physical Review Applied, vol. 15, 044049 (10 pages), April 2021. DOI:10.1103/PhysRevApplied.15.044049
  74. G. Wolfowicz, F. J. Heremans, C. P. Anderson, S. Kanai, H. Seo, A. Gali, G. Galli, and D. D. Awschalom, "Quantum guidelines for solid-state spin defects," Nature Reviews Materials, vol. 6, pp. 906-925, April 2021. DOI:10.1038/s41578-021-00306-y
  75. S. Kanai, K. Hayakawa, H. Ohno, and S. Fukami, "Theory of relaxation time of stochastic nanomagnets," Physical Review B, vol. 103, 094423 (12 pages), March 2021. DOI:10.1103/PhysRevB.103.094423
  76. K. Hayakawa, S. Kanai, T. Funatsu, J. Igarashi, B. Jinnai, W. A. Borders, H. Ohno, and S. Fukami, "Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions," Physical Review Letters, vol. 126, 117202 (6 pages), March 2021. DOI:10.1103/PhysRevLett.126.117202
  77. J. Ieda and Y. Yamane, "Intrinsic and extrinsic tunability of Rashba spin-orbit coupled emergent inductors," Physical Review B, vol. 103, L100402 (5 pages), March 2021. DOI:10.1103/PhysRevB.103.L100402
  78. C. Zhang, Y. Takeuchi, S. Fukami, and H. Ohno, "Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin-orbit torque," Applied Physics Letters, vol. 118, 092406 (4 pages), March 2021. DOI:10.1063/5.0039061
  79. B. Jinnai, J. Igarashi, K. Watanabe, E.C.I. Enobio, S. Fukami, and H. Ohno, "Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions," Applied Physics Letters, vol. 118, 082404 (5 pages), February 2021. DOI:10.1063/5.0043058
  80. A. K. Dhiman, T. Dohib, W. Dobrogowski, Z. Kurant, I. Sveklo, S. Fukami, H. Ohno, and A. Maziewski, "Magnetization processes and magnetic domain structures in Ta/CoFeB/MgO stacks," Journal of Magnetism and Magnetic Materials, vol. 529, 167699 (17 pages), February 2021. DOI:10.1016/j.jmmm.2020.167699
  81. J. Igarashi, B. Jinnai, V. Desbuis, S. Mangin, S. Fukami, and H. Ohno, "Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions," Applied Physics Letters, vol. 118, 012409 (5 pages), January 2021. DOI:10.1063/5.0029031
    82. 2020
  82. M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu, "Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition," IEEE Journal of Solid-State Circuits, vol. 56, pp. 1116-1128, December 2020. DOI:10.1109/JSSC.2020.3039800
  83. J. Igarashi, Q. Remy, S. Iihama, G. Malinowski, M. Hehn, J. Gorchon, J. Hohlfeld, S. Fukami, H. Ohno, and S. Mangin, "Engineering Single-Shot All-Optical Switching of Ferromagnetic Materials," Nano Letters, vol. 20, 8654-8660, November 2020. DOI:10.1021/acs.nanolett.0c03373
  84. M. Shinozaki, T. Dohi, J. Igarashi, J. Llandro, S. Fukami, H. Sato, and H. Ohno, "Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance," Applied. Physics Letters, vol. 117, 202404 (4 pages), October 2020. DOI:10.1063/5.0020591
  85. S. DuttaGupta, A. Kurenkov, O. A. Tretiakov, G. Krishnaswamy, G. Sala, V. Krizakova, F. Maccherozzi, S. S. Dhesi, P. Gambardella, S. Fukami, and H. Ohno, "Spin-orbit torque switching of an antiferromagnetic metallic heterostructure," Nature Communications, vol. 11, 5715 (8 pages), November 2020. DOI:10.1038/s41467-020-19511-4
  86. G. K. Krishnaswamy, A. Kurenkov, G. Sala, M. Baumgartner, V. Krizakova, C. Nistor, F. Maccherozzi, S. S. Dhesi, S. Fukami, H. Ohno, and P. Gambardella, "Multidomain Memristive Switching of Pt38Mn62/[Co/Ni]n Multilayers," Physical Review Applied, vol. 14, 044036 (10 pages), October 2020. DOI:10.1103/PhysRevApplied.14.044036
  87. Q. Remy, J. Igarashi, S. Iihama, G. Malinowski, M. Hehn, J. Gorchon, J. Hohlfeld, S. Fukami, H. Ohno, and S. Mangin, "Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet," Advanced Science, vol. 7, 2001996 (8 pages), October 2020. DOI:10.1002/advs.202001996
  88. K. Ishibashi, S. Iihama, Y. Takeuchi, K. Furuya, S. Kanai, S. Fukami, and S. Mizukami, "All-optical probe of magnetization precession modulated by spin-orbit torque," Applied Physics Lertters, vol. 117, 122403 (4 pages), September 2020. DOI:10.1063/5.0020852
  89. S. Fukami, V. O. Lorenz, and O. Gomonay, "Antiferromagnetic spintronics," Journal of Applied Physics Letters, vol. 128, 070401 (3 pages), August 2020. DOI:10.1063/5.0023614
  90. H. Fulara, M. Zahedinejad, R. Khymyn, M. Dvornik, S. Fukami, S. Kanai, H. Ohno, and J. Akerman, "Giant voltage-controlled modulation of spin Hall nano-oscillator damping," Nature Communications, vol. 11, 4006 (7 pages), August 2020. DOI:10.1038/s41467-020-17833-x
  91. K. V. De Zoysa, S. DuttaGupta, R. Itoh, Y. Takeuchi, H. Ohno, and S. Fukami, "Composition dependence of spin-orbit torque in Pt1-xMnx/CoFeB heterostructures," Applied Physics Letters, vol. 117, 012402 (4 pages), July 2020. DOI:10.1063/5.0011448
  92. S. Fukami, W. A. Borders, A. Z. Pervaiz, K. Y. Camsari, S. Datta, and H. Ohno, "Probabilistic computing based on spintronics technology," Conference Proceedings, 2020 IEEE Silicon Nanoelectronics Workshop, 21-22, July 2020. DOI:10.1109/SNW50361.2020.9131622
  93. A. Kurenkov, S. Fukami, and H. Ohno, "Neuromorphic computing with antiferromagnetic spintronics," Journal of Applied Physics, vol. 128, 010902 (12 pages), July 2020. DOI:10.1063/5.0009482
  94. O. Stejskal, A. Thiaville, J. Hamrle, S. Fukami, and H. Ohno, "Current distribution in metallic multilayers from resistance measurements," Physical Review B, vol. 101, 235437 (9 pages), June 2020. DOI:10.1103/PhysRevB.101.235437
  95. B. Jinnai, K. Watanabe S. Fukami, and H. Ohno, "Scaling magnetic tunnel junction down to single-digit nanometers-Challenges and prospects," Applied Physics Letters, vol. 116, 160501 (7 pages), April 2020. DOI:10.1063/5.0004434
  96. J. Llandro, D. M. Love, A. KovacsJan, J. Caron, K. N. Vyas, A. Ka-kay, R. Salikhov, K. Lenz, J. Fassbender, M. R. J. Scherer, C. Cimorra, U. Steiner, C. H. W. Barnes, R. E. Dunin-Borkowski, S. Fukami, and H. Ohno, "Visualizing Magnetic Structure in 3D Nanoscale Ni-Fe Gyroid Networks," Nano Letters, vol. 20, 3642-3650, April 2020. DOI:10.1021/acs.nanolett.0c00578
  97. J. Ishihara, G. Kitazawa, Y. Furusho, Y. Ohno, H. Ohno, and K. Miyajima, "Zero-field spin precession dynamics of high-mobility two-dimensional electron gas in persistent spin helix regime," Physical Review B, vol. 101, 094438 (5 pages), March 2020. DOI:10.1103/PhysRevB.101.094438
  98. N. Keswani, Y. Nakajima, N. Chauhan, T. Ukai, H. Chakraborti, K. D. Gupta, T. Hanajiri, S. Kumar, Y. Ohno, H. Ohno, and P. Das, "Complex switching behavior of magnetostatically coupled single-domain nanomagnets probed by micro-Hall magnetometry," Applied Physics Letters, vol. 116, 102401 (5 pages), March 2020. DOI:10.1063/1.5144841
  99. J. Grollier, D. Querlioz, K. Y. Camsari, K. Everschor-Sitte, S. Fukami, and M. D. Stiles, "Neuromorphic spintronics," Nature Electronics, vol. 3, pp. 360-370, March 2020. DOI:10.1038/s41928-019-0360-9
    100. 2019
  100. R. Itoh, Y. Takeuchi, S. DuttaGupta, S. Fukami, and H. Ohno, "Stack structure and temperature dependenceof spin-orbit torques in heterostructures withantiferromagnetic PtMn," Applied Physics Letters, vol. 115, 242404 (4 pages), December 2019. DOI:10.1063/1.5129829
  101. J. Yoon, Y. Takeuchi, R. Itoh, S. Kanai, S. Fukami, and H. Ohno, "Crystal orientation and anomalaous Hall effect of sputter-deposited non-colinear antiferromagnetic Mn3Sn thin films," Applied Physics Express, vol. 13, 013001 (4 pages), December 2019. DOI.org/10.7567/1882-0786/ab5874
  102. T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno, "Formation and current-induced motion of synthetic antiferromagnetic skyrmion bubbles," Nature communications, vol. 10, 5153 (6 pages), November 2019. DOI.org/10.1038/s41467-019-13182-6
  103. Y. -C. Lau, Z. Chi, T. Taniguchi, M. Kawaguchi, G. Shibata, N. Kawamura, M. Suzuki, S. Fukami, A. Fujimori, H. Ohno, and M. Hayashi, "Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers," Physical Review Materials, vol. 3, 104419 (8 pages), October 2019. DOI:10.1103/PhysRevMaterials.3.104419
  104. T. Saino, S. Kanai, M. Shinozaki, B. Jinnai, H. Sato, S. Fukami, and H. Ohno, "Write-error rate of nanoscale magnetic tunnel junctions in the precessional regime," Applied Physics Letters, vol. 115, 142406 (5 pages), October 2019. DOI:10.1063/1.5121157
  105. W. A. Borders, A. Z. Pervaiz, S. Fukami, K. Y. Camsari, H. Ohno, and S. Datta, "Integer factorization using stochastic magnetic tunnel junctions," Nature, vol. 573, 390-393, September 2019. DOI:10.1038/s41586-019-1557-9
  106. S. Gupta, F. Matsukura, and H. Ohno, "Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction," Journal of Physics D: Applied Physics, vol. 52, 495002 (6 pages), September 2019. DOI:10.1088/1361-6463/ab3fc6
  107. L. Chen, J. Zhao, D. Weiss, C.H. Back, F. Matsukura, and H. Ohno, "Magnetization dynamics and related phenomena in semiconductors with ferromagnetism," Journal of Semiconductors, vol. 40, 081502 (8 pages), August 2019. DOI:10.1088/1674-4926/40/8/081502
  108. T. Dietl, A. Bonanni, and H. Ohno, "Families of magnetic semiconductors - an overview," Journal of Semiconductors, vol. 40, 080301 (5 pages), August 2019. DOI:10.1088/1674-4926/40/8/080301
  109. A. Okada, Y. Takeuchi., K. Furuya, C. Zhang, H. Sato, S. Fukami, and H. Ohno, "Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance," Physical Review Applied, vol. 12, 014040 (11 pages), July 2019. DOI:10.1103/PhysRevApplied.12.014040
  110. A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, and H. Ohno, "Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spin-orbit torque switching," Advanced Materials, vol. 31, 1900636 (7 pages), April 2019. DOI:10.1002/adma.201900636
  111. T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno, "Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems," Applied Physics Letters, vol. 114, 042405 (5 pages), January 2019. DOI:10.1063/1.5084095
  112. Y. Takahashi, Y. Takeuchi, C. Zhang, B. Jinnai, S. Fukami, and H. Ohno, "Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance," Applied Physics Letters, vol. 114, 012410 (4 pages), January 2019. DOI:10.1063/1.5075542
    113. 2018
  113. H. Sato, P. Chureemart, F. Matsukura, R. W. Chantrell, H. Ohno, and R. F. L. Evans, "Temperature-dependent properties of CoFeB/MgO thin films: Experiments versus simulations," Physical Review B, vol. 98, 214428 (7 pages), December 2018. DOI:10.1103/PhysRevB.98.214428
  114. B. Jinnai, H. Sato, S. Fukami, and H. Ohno, "Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires," Applied Physics Letters, vol. 113, 212403 (4 pages), November 2018. DOI:10.1063/1.5045814
  115. S. DuttaGupta, R. Itoh, S. Fukami, and H. Ohno, "Angle dependent magnetoresistance in heterostructures with antiferromagnetic and non-magnetic metals," Applied Physics Letters, vol. 113, 202404 (5 pages), November 2018. DOI:10.1063/1.5049566
  116. M. Bersweiler, E. C. I. Enobio, S. Fukami, H. Sato, and H. Ohno, "An effect of capping-layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/capping-layer structure," Applied Physics Letters, vol. 113, 172401 (4 pages), October 2018. DOI:10.1063/1.5050486
  117. S. Fukami and H. Ohno, "Perspective: Spintronic synapse for artificial neural network," Journal of Applied Physics, vol. 124, 151904 (8 pages), October 2018. DOI:10.1063/1.5042317
  118. W. A. Borders, S. Fukami, and H. Ohno, "Characterization of spin-orbit torque-controlled synapse device for artificial neural network applications," Japanese Journal of Applied Physics, vol. 57, 1002B2 (5 pages), September 2018. DOI:10.7567/JJAP.57.1002B2
  119. M. Pohlit, S. Rosler, Y. Ohno, H. Ohno, S. Molnar, Z. Fisk, J. Muller, and S. Wirth, "Evidence for Ferromagnetic Clusters in the Colossal-Magnetoresistance Material EuB6," Physical Review Letters, vol. 120, 257201 (5 pages), June 2018. DOI:10.1103/PhysRevLett.120.257201
  120. N. Ichikawa, T. Dohi, A. Okada, H. Sato, S. Fukami, and H. Ohno, "Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis," Applied Physics Letters, vol. 112, 202402 (5 pages), May 2018. DOI:10.1063/1.5035487
  121. Y. Takeuchi, C. Zhang, A. Okada, H. Sato, S. Fukami, and H. Ohno, "Spin-orbit torques in high-resistivity-W/CoFeB/MgO," Applied Physics Letters, vol. 112, 192408 (5 pages), April 2018. DOI:10.1063/1.5027855
  122. A. Okada, S. Kanai, S. Fukami, H. Sato, and H. Ohno, "Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance," Applied Physics Letters, vol. 111, 172402 (5 pages), April 2018. DOI:10.1063/1.5026418
  123. E. C. I. Enobio, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno, "Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement," Japanese Journal of Applied Physics, vol. 57, 04FN08 (4 pages), March 2018. DOI:10.7567/JJAP.57.04FN08
  124. M. Shinozaki, J. Igarashi, H. Sato, and H. Ohno, "Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions," Applied Physics Express, vol. 11, 043001 (4 pages), March 2018. DOI:10.7567/APEX.11.043001
  125. J. Železný, P. Wadley, K. Olejnik, A. Hoffmann, and H. Ohno, "Spin transport and spin torque in antiferromagnetic devices," Nature Physics, vol. 14, 220-228 (9 pages), March 2018. DOI:10.1038/s41567-018-0062-7
  126. C. Zhang, S. Fukami, S. DuttaGupta, H. Sato, and H. Ohno, "Time and spatial evolution of spin-orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes," Japanese Journal of Applied Physics, vol. 57, 04FN02 (5 pages), February 2018. DOI:10.7567/JJAP.57.04FN02
  127. K. Watanabe, B. Jinnai, S. Fukami, H. Sato, and H. Ohno, "Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions," Nature Communications, vol. 9, 663 (6 pages), February 2018. DOI:10.1038/s41467-018-03003-7
  128. S. Gupta, S. Kanai, F. Matsukura, and H. Ohno, "Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi1-xSbx)2Te3," Japanese Journal of Applied Physics, vol. 57, 020302 (4 pages), January 2018. DOI:10.7567/JJAP.57.020302

    2017
  129. S. Bhatti, R. Sabiaa, A. Hirohota, H. Ohno, S. Fukami, and S.N. Piramanayagam, "Spintronics based random access memory: a review," Material Today, vol. 20, 9 (19 pages), November 2017. DOI:10.1016/j.mattod.2017.07.007
  130. H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, H. Inoue, M. Muraguchi, M. Niwa, H. Ohno, and T. Endoh, "Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer," IEEE Transactions on Magnetics, vol. 53, 2501604 (4 pages), November 2017. DOI:10.1109/TMAG.2017.2701838
  131. S. DuttaGupta, T. Kanemura, C. Zhang, A. Kurenkov, S. Fukami, and H. Ohno, "Spin-orbit torques and Dzyaloshinskii-Moriya interaction in PtMn/[Co/Ni] heterostructures," Applied Physics Letters, vol. 111, 182412 (5 pages), November 2017. DOI:10.1063/1.5005593
  132. W. A. Borders, S. Fukami, and H. Ohno, "Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device," IEEE Transactions on Magnetics, vol. 53, 6000804 (4 pages), October 2017. DOI:10.1109/TMAG.2017.2703817
  133. M. Bersweiler, H. Sato, and H. Ohno, "Magnetic and Free-Layer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition," IEEE Magnetics Letters, vol. 8, 3109003 (3 pages), October 2017. DOI:10.1109/LMAG.2017.2748929
  134. J. Igarashi, J. Llandro, H. Sato, F. Matsukura, and H. Ohno, "Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis," Applied Physics Letters, vol. 111, 132407 (4 pages), September 2017. DOI:10.1063/1.5004968
  135. B. Jinnai, C. Zhang, A. Kurenkov, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno, "Spin-orbit torque induced magnetization switching in Co/Pt multilayers," Applied Physics Letters, vol. 111, 102402 (3 pages), September 2017. DOI:10.1063/1.5001171
  136. S. Gupta, S. Kanai, F. Matsukura, and H. Ohno, "Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr," Applied Physics Express, vol. 10, 103001 (3 pages), September 2017. DOI:10.7567/APEX.10.103001
  137. T. Dohi, S. Kanai, F. Matsukura, and H. Ohno, "Electric-field effect on spin-wave resonance in a nanoscale CoFeB/MgO magnetic tunnel junction," Applied Physics Letters, vol. 111, 027403 (3 pages), August 2017. DOI:10.1063/1.4999312
  138. H. Sato, S. Ikeda, and H. Ohno, "Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm," Japanese Journal of Applied Physics, vol. 56, 0802A6 (9 pages), July 2017. DOI:10.7567/JJAP.56.0802A6
  139. M. Bersweiler, K. Watanabe, H. Sato, F. Matsukura, and H. Ohno, "Magnetic properties of FeV/MgO-based structures," Applied Physics Express, vol. 10, 083001 (3 pages), July 2017. DOI:10.7567/APEX.10.083001
  140. S. Kanai, F. Matsukura, and H. Ohno, "Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions," Japanese Journal of Applied Physics, vol. 58, 0802A3 (7 pages), June 2017. DOI:10.7567/JJAP.56.0802A3
  141. S. Fukami, and H. Ohno, "Magnetization switching schemes for nanoscale three-terminal spintronics devices," Japanese Journal of Applied Physics, vol. 56, 0802A1 (12 pages), June2017. DOI:10.7567/JJAP.56.0802A1
  142. K. Watanabe, S. Fukami, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno, "Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers," Japanese Journal of Applied Physics, vol. 56, 0802B2 (4 pages), June 2017. DOI:10.7567/JJAP.56.0802B2
  143. J. J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno, Y. Ikuhara, and K. P. McKenna, "Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices," Scientific Reports, vol. 7, 45594 (9 pages), April 2017. DOI:10.1038/srep45594
  144. A. Okada, S. He, B. Gu, S. Kanai, A. Soumyanarayanan, S. T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, and C. Panagopoulos, "Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy," Proceedings of the National Academy of Sciences of the United States of America, vol. 114, 3815 (6 pages), March 2017. DOI:10.1073/pnas.1613864114
  145. A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, and H. Ohno, "Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures," Applied Physics Letters, vol. 110, 092410 (5 pages), March 2017. DOI:10.1063/1.4977838
  146. D. Suzuki, M. Natsui, S. Ikeda, T. Endoh, H. Ohno. and T. Hanyu, "Design of a variation-resilient single-ended non-volatile six-input lookup table circuit with a redundant-magnetic tunnel junction-based active load for smart Internet-of-things applications," ELECTRONICS LETTERS, vol. 53, 456 (2 pages), March 2017. DOI:10.1049/el.2016.4233
  147. M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu, "A spin transfer torque magnetoresistance random access memory-based high-density and ultralowpower associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching," Japanese Journal of Applied Physics, vol. 56, 04CN08 (9 pages), March 2017. https://iopscience.iop.org/article/10.7567/JJAP.56.04CN01
  148. N. Ohshima, H. Sato, S. Kanai, J. Llandro, S. Fukami, F. Matsukura, and H. Ohno, "Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field ," AIP Advances, vol. 7, 055927 (5 pages), February 2017. DOI:10.1063/1.4977224
  149. S. Gupta, S. Kanai, F. Matsukura, and H. Ohno, "Ferromagnetic resonance spectra of Py deposited on (Bi1-xSbx)2Te3," AIP Advances, vol. 7, 055919 (4 pages), January 2017. DOI:10.1063/1.4974891
  150. S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, and H. Ohno, "Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO," AIP Advances, vol. 7, 055918 (7 pages), January 2017. DOI:10.1063/1.4974889
  151. W A. Borders, H. Akima, S. Fukami, S, Moriya, S. Kurihara, Y. Horio, S. Sato, and H. Ohno, "Analogue spin.orbit torque device for artificial-neural-network-based associative memory operation," Applied Physics Express, vol. 10, 013007 (4 pages), January 2017. DOI:10.7567/APEX.10.013007
  152. M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, H. Ohno, "Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance," Applied Physics Express, vol. 10, 013001 (3 pages), January 2017. DOI:10.7567/APEX.10.013001

    2016
  153. C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno, "Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO," Applied Physics Letters, vol. 109, 192405 (5 pages), November 2016. DOI:10.1063/1.4967475
  154. T. Hanyu, T. Endoh, D. Suzuki, H. Koike, Y. Ma, N. Onizawa, M. Natsui, S. Ikeda, and H. Ohno, "Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing," Proceedings of the IEEE, vol. 104, 10 (20 pages), March 2016. DOI:10.1109/JPROC.2016.2574939
  155. H. Mazraati, T. Q. Le, A. A. Awad, S. Chung, E. Hirayama, S. Ikeda, F. Matsukura, H. Ohno, and J. Akerman, "Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis," Physical Review B, vol. 94, 104428 (6 pages), September 2016. DOI:10.1103/PhysRevB.94.104428
  156. Y. Hibino, T. Koyama, A. Obinata, T. Hirai, S. Ota, K. Miwa, S. Ono, F. Matsukura, H. Ohno, and D. Chiba, "Peculiar temperature dependence of electric-field effect on magnetic anisotropy in Co/Pd/MgO system," Applied Physics Letters, vol. 108, 082403 (4 pages), August 2016. DOI:10.1063/1.4961621
  157. E. Hirayama, H. Sato, S. Kanai, F. Matsukura, and H. Ohno, "Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis," IEEE Magnetics Letters, vol. 7, 3104004 (4 pages), July 2016. DOI:10.1109/LMAG.2016.2568163
  158. T. Dohi, S. Kanai, A. Okada, F. Matsukura, and H. Ohno, "Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB," AIP Advances, vol. 6, 075017 (4 pages), July 2016. DOI:10.1063/1.4959905
  159. S. Ishikawa, Eli. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy," IEEE Transactions on Magnetics, vol. 52, 3400704 (4 pages), July 2016. DOI:10.1109/TMAG.2016.2517098
  160. H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, and T. Endoh, "Improvement of Thermal Tolerance of CoFeB/MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition," IEEE Transactions on Magnetics, vol. 52, 3401104 (4 pages), July 2016. DOI:10.1109/TMAG.2016.2518203
  161. K. Watanabe, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, "Magnetic Properties of CoFeB.MgO Stacks With Different Buffer-Layer Materials (Ta or Mo)," IEEE Transactions on Magnetics, vol. 52, 3400904 (4 pages), July 2016. DOI:10.1109/TMAG.2016.2514525
  162. T. Endoh, H. Koike, S. Ikeda, T. Hanyu, and H. Ohno, "An Overview of Nonvolatile Emerging Memories -Spintronics for Working Memories," IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, vol. 6, 109 (11 pages), June 2016. DOI: 10.1109/JETCAS.2016.2547704
  163. S. Souma, L. Chen, R. O. dowski, T. Sato, F. Matsukura, T. Dietl, H. Ohno, and T. Takahashi, "Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As," Scientific Reports, vol. 6, 27266 (10 pages), June 2016. DOI:10.1038/srep27266
  164. S. Kanai, F. Matsukura, and H. Ohno, "Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance," Applied Physics Letters, vol. 108, 192406 (4 pages), May 2016. DOI:10.1063/1.4948763
  165. S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, and M. Niwa, "Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy," Japanese Journal of Applied Physics, vol. 55, 04EE05 (7 pages), March 2016. DOI:10.7567/JJAP.55.04EE05
  166. T. Endoh, H. Koike, S. Ikeda, T. Hanyu, and H. Ohno, "A 600-μW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme," Japanese Journal of Applied Physics, vol. 55, 04EF15 (11 pages), March 2016. DOI:10.7567/JJAP.55.04EF15
  167. Y. Nakatani, M. Hayashi, S. Kanai, S. Fukami, and H. Ohno, "Electric field control of Skyrmions in magnetic nanodisks," Applied Physics Letters, vol. 108, 152403 (6 pages), March 2016. DOI:10.1063/1.4945738
  168. S. Miyakozawa, L. Chen, F. Matsukura, and H. Ohno, "Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li," Applied Physics Letters, vol. 108, 112404 (3 pages), March 2016. DOI:10.1063/1.4944328
  169. Z. Wang, M. Saito, K. P. McKenna, S. Fukami, H. Sato, S. Ikeda, H. Ohno, and Y. Ikuhara, "Atomic-Scale Structure and Local Chemistry of CoFeB/MgO Magnetic Tunnel Junctions," Nano Letters, vol. 3, pp. 1530-1536, March 2016. DOI:10.1021/acs.nanolett.5b03627
  170. S. Fukami, T. Anekawa, C. Zhang, and H. Ohno, "A spin-orbit torque switching scheme with collinear magnetic easy axis and current configuration," Nature Nanotechnology, pp. 621-625, March 2016. DOI:10.1038/nnano.2016.29
  171. S. Fukami, T. Iwabuchi, H. Sato, and H. Ohno, "Current-induced domain wall motion in magnetic nanowires with various widths down to less than 20 nm," Japanese Journal of Applied Physics, vol. 54, 04EN01 (4 pages), February 2016. DOI:10.7567/JJAP.55.04EN01
  172. S. Fukami, C. Zhang, S. DuttaGupta, A. Kurenkov, H. Ohno, "Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system," Nature Materials, vol. 15, pp. 535-541, February 2016. DOI:10.1038/nmat4566

    2015
  173. S. DuttaGupta, S. Fukami, C. Zhang, H. Sato, M. Yamanouchi, F. Matsukura, and H. Ohno, "Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal," Nature Physics, vol. 12 , 3593 (5 pages), December 2015. DOI:10.1038/nphys3593
  174. Y. Takeuchi, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis," Applied Physics Letters, vol. 107, 152405 (3 pages), October 2015. DOI:10.1063/1.4933256
  175. Eli. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeB-MgO Interface Structures," IEEE Magnetics Letters, vol. 6, 5700303 (3 pages), September 2015. DOI:10.1109/LMAG.2015.2475718
  176. E. Hirayama, S. Kanai, J. Ohe, H. Sato, F. Matsukura, and H. Ohno, "Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction," Applied Physics Letters, vol. 107, 132404 (4 pages), September 2015. DOI:10.1063/1.4932092
  177. F. Matsukura and H. Ohno, "Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate," Japanese Journal of Applied Physics, vol. 54, 098003 (2 pages), August 2015. DOI:10.7567/JJAP.54.098003
  178. L. Chen, F. Matsukura, and H. Ohno, "Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As," Physical Review Letters, vol. 115, 057204 (5 pages), July 2015. DOI:10.1103/PhysRevLett.115.057204
  179. S. D'Ambrosio, L. Chen, H. Nakayama, F. Matsukura, T. Dietl, and H. Ohno, "Ferromagnetic resonance of Py deposited on ZnO grown by molecular beam epitaxy," Japanese Journal of Applied Physics, vol. 54, 093001 (4 pages), July 2015. DOI:10.7567/JJAP.54.093001
  180. C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, "Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO," Applied Physics Letters, vol. 107, 012401 (4 pages), July 2015. DOI:10.1063/1.4926371
  181. S. Fukami, J. Ieda, and H. Ohno, "Thermal stability of a magnetic domain wall in nanowires," Physical Review B, vol. 91, 235401 (7 pages), June 2015. DOI:10.1103/PhysRevB.91.235401
  182. H. Nakayama, L. Chen, H.W. Chang, H. Ohno, and F. Matsukura, "Inverse spin Hall effect in Pt/(Ga,Mn)As," Applied Physics Letters, vol. 106, 222405 (4 pages), June 2015. DOI:10.1063/1.4922197
  183. F. Matsukura, Y. Tokura and H. Ohno, "Control of magnetism by electric fields," Nature Nanotechnology, vol. 10, 209 (12 pages), March 2015. DOI:10.1038/nnano.2015.22
  184. K. Watanabe, S. Ishikawa, H. Sato, S. Ikeda, M. Yamanouchi, S. Fukami, F. Matsukura, and H. Ohno, "Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses," Japanese Journal of Applied Physics, vol. 54, 04EM04 (3 pages), March 2015. DOI:10.7567/JJAP.54.04DM04
  185. E. Hirayama, S. Kanai, K. Sato, M. Yamanouchi, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno, "In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis," Japanese Journal of Applied Physics, vol. 54, 04EM03 (3 pages), February 2015. DOI:10.7567/JJAP.54.04DM03
  186. E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Ferromagnetic resonance in nanoscale CoFeB/MgO magnetic tunnel junctions," Journal of Applied Physics, vol. 117, 17B708 (4 pages), February 2015. DOI:10.1063/1.4908149
  187. S. Kanai, F. Matsukura, S. Ikeda, AAPPS H. Sato, S. Fukami, and H. Ohno, "Spintronics: from Basic Research to VLSI Application," AAPPS Bulletin, vol. 25, pp. 4-11, February 2015.
  188. R. Hiramatsu, K. -J. Kim, T. Taniguchi, T. Tono, T. Moriyama, S. Fukami, M. Yamanouchi, H. Ohno, Y. Nakatani, and T. Ono, "Localized precessional mode of domain wall controlled by magnetic field and dc current," Applied Physics Express, vol. 8, 023003 (4 pages), January 2015. DOI:10.7567/APEX.8.023003

    2014
  189. H. Jarollahi, N. Onizawa, V. Gripon, N. Sakimura, T. Sugibayashi, T. Endoh, H. Ohno, T. Hanyu, and W. J. Gross, "A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture," IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 4, pp. 460-474, December 2014. DOI:10.1109/JETCAS.2014.2361061
  190. S. Kanai, M. Gajek, D. C. Worledge, F. Matsukura, and H. Ohno, "Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages," Applied Physics Letters, vol. 105, 242409 (4 pages), December 2014. DOI:10.1063/1.4904956
  191. S. Kanai, M. Tsujikawa, Y. Miura, M. Shirai, F. Matsukura, and H. Ohno, "Magnetic anisotropy in Ta/CoFeB/MgO investigated by x-ray magnetic circular dichroism and first-principles calculation," Applied Physics Letters, vol. 105, 222409 (4 pages), December 2014. DOI:10.1063/1.4903296
  192. H. Honjo, S. Fukami, K. Ishihara, K. Kinoshita, Y. Tsuji, A. Morioka, R. Nebashi, K. Tokutome, N. Sakimura, M. Murahata, S. Miura, T. Sugibayashi, N. Kasai, and H. Ohno, "Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device," IEEE Transactions on Magnetics, vol. 50, 1401904 (4 pages), November 2014. DOI:10.1109/TMAG.2014.2325019
  193. S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno, "Domain Wall Motion Device for Nonvolatile Memory and Logic - Size Dependence of Device Properties," IEEE Transactions on Magnetics, vol. 50, 3401006 (6 pages), November 2014. DOI:10.1109/TMAG.2014.2321396
  194. K. Kinoshita, H. Honjo, S. Fukami, H. Sato, K. Mizunuma, K. Tokutome, M. Murahata, S. Ikeda, S. Miura, N. Kasai, and H. Ohno, "Process-induced damage and its recovery for a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis," Japanese Journal of Applied Physics, vol. 53, 103001 (6 pages), September 2014. DOI:10.7567/JJAP.53.103001
  195. J. Torrejon, J. Kim, J. Sinha, S. Mitani, M. Hayashi, M. Yamanouchi, H. Ohno, "Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers," Nature Communications, vol. 5, 4655 (8 pages), August 2014. DOI:10.1038/ncomms5655
  196. H. Sato, E.C.I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, S. Kanai, F. Matsukura, and H. Ohno, "Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm," Applied Physics Letters, vol. 105, 062403 (4 pages), August 2014. DOI:10.1063/1.4892924
  197. A. Okada, S. Kanai, M. Yamanouchi, S. Ikeda, F. Matsukura, and H. Ohno, "Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance," Applied Physics Letters, vol. 105, 052415 (4 pages), August 2014. DOI:10.1063/1.4892824
  198. H. W. Chang, S. Akita, F. Matsukura, and H. Ohno, "Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers," Journal of Crystal Growth, vol. 401, pp. 633-635, July 2014. DOI:10.1016/j.jcrysgro.2013.11.041
  199. S. Miyakozawa, L. Chen, F. Matsukura, and H. Ohno, "Properties of (Ga,Mn)As codoped with Li," Applied Physics Letters, vol. 104, 222408 (4 pages), June 2014. DOI:10.1063/1.4881636
  200. S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, H. Sato, F. Matsukura, and H. Ohno, "Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin transfer torque and electric field-effect," Applied Physics Letters, vol. 104, 212406 (3 pages), May 2014. DOI:10.1063/1.4880720
  201. J. Kim, J. Sinha, S. Mitani, M. Hayashi, S. Takahashi, S. Maekawa, M. Yamanouchi, and H. Ohno, "Anomalous temperature dependence of current-induced torques in CoFeB/MgO heterostructures with Ta-based underlayers," Physical Review B, vol. 89, 174424 (8 pages), May 2014. DOI:10.1103/PhysRevB.89.174424PRB

  202. M. Hayashi, J. Kim, M. Yamanouchi, and H. Ohno, "Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements," Physical Review B, vol. 89, 144425 (15 pages), May 2014. DOI:10.1103/PhysRevB.89.144425

  203. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability," Journal of the Magnetics Society of Japan, vol. 38, pp. 56-60, May 2014. DOI:10.3379/msjmag.1403R002

  204. Y. Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, K.-J. Kim, T. Moriyama, and T. Ono, "Effect of spin Hall torque on current-induced precessional domain wall motion," Applied Physics Express, vol. 7, 033005 (4 pages), May 2014. DOI:10.7567/APEX.7.033005

  205. D. Kobayashi, Y. Kakehashi, K. Hirose, S. Onoda, T. Makino, T. Ohshima, S. Ikeda, M. Yamanouchi, H. Sato, Eli I. C. Enobio, T. Endoh, and H. Ohno, "Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions," IEEE Transactions on Nuclear Science, pp. 1710-1716, April 2014. DOI:10.1109/TNS.2014.2304738

  206. K. Kinoshita, H. Honjo, S. Fukami, R. Nebashi, K. Tokutome, M. Murahata, S. Miura, N. Kasai, Ikeda, and H. Ohno, "Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion," Japanese Journal of Applied Physics, vol. 53, 03DF03 (6 pages), March 2014. DOI:10.7567/JJAP.53.03DF03
  207. T. Dietl and H. Ohno, "Dilute ferromagnetic semiconductors: Physics and spintronic structures," Reviews of Modern Physics, vol. 86, 187 (65 pages), March 2014. DOI:10.1103/RevModPhys.86.187

  208. M. Ono, J. Ishihara, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno, "Strain and origin of inhomogeneous broadening probed by optically detected nuclear magnetic resonance in a (110) GaAs quantum well," Physical Review B, vol. 89, 115308 (4 pages), March 2014. DOI:10.1103/PhysRevB.89.115308

  209. J. Ishihara, Y. Ohno, and H. Ohno, "Direct mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires," Japanese Journal of Applied Physics, vol. 53, 04EM04 (3 pages), March 2014. DOI:10.7567/JJAP.53.04EM04

  210. N. Sakimura, Y. Tsuji, R. Nebashi, H. Honjo, A. Morioka, K. Ishihara, K. Kinoshita, S. Fukami, S. Miura, N. Kasai, T. Endoh, H. Ohno, T. Hanyu, T. Sugibayashi, "A 90nm 20MHz Fully Nonvolatile Microcontroller for Standby-Power-Critical Applications," 2014 IEEE International Solid-State Circuits Conference, vol. 10.5, 184 (3 pages), February. 2014. DOI:10.1109/ISSCC.2014.6757392

  211. S. Fukami, M. Yamanouchi, Y. Nakatani, K.-J. Kim, T. Koyama, D. Chiba, S. Ikeda, N. Kasai, T. Ono, and H. Ohno, "Distribution of critical current density for magnetic domain wall motion," Journal of Applied Physics, vol. 115, 17D508 (3 pages), February 2014. DOI:10.1063/1.4866394

  212. S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer," Journal of Applied Physics, vol. 115, 17C719 (3 pages), February 2014. DOI:10.1063/1.4862724

  213. H. Sato, S. Ikeda, S. Fukami, H. Honjo, S. Ishikawa, M. Yamanouchi, K. Mizunuma, F. Matsukura, and H. Ohno, "Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs," Japanese Journal of Applied Physics, vol. 53, 04EM02 (3 pages), February 2014. DOI:10.7567/JJAP.53.04EM02

  214. C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura and H. Ohno, "Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis," Journal of Applied Physics, vol. 115, 17C714 (3 pages), January 2014. DOI:10.1063/1.4863260

  215. L. Chen, S. Ikeda, F. Matsukura, and H. Ohno, "DC voltages in Py and Py/Pt under ferromagnetic resonance," Applied Physics Express, vol. 7, 013002 (4 pages), January 2014. DOI:10.7567/APEX.7.013002

  216. J. Ishihara, Y. Ohno, and H. Ohno, "Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well," Applied Physics Express, vol. 7, 013001 (4 pages), January 2014. DOI:10.7567/APEX.7.013001

  217. S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno, "Electric Field-Induced Magnetization Switching in CoFeB-MgO-Static Magnetic Field Angle Dependence," IEEE Transactions on Magnetics, vol. 50, 4200103 (3 pages), January 2014. DOI:10.1109/TMAG.2013.2278559



    2013
  218. S. Fukami, M. Yamanouchi, K.-J. Kim, T. Suzuki, N. Sakimura, D. Chiba, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, and H. Ohno, "20-nm magnetic domain wall motion memory with ultralow-power operation," Electron Devices Meeting (IEDM), pp. 3.2.1-3.2.4, December 2013. DOI:10.1109/IEDM.2013.6724550

  219. H. Sato, T. Yamamoto, M. Yamanouchi, S. Ikeda, S. Fukami, K. Kinoshita, F. Matsukura, N. Kasai, and H. Ohno, "Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm," Electron Devices Meeting (IEDM), pp. 3.2.1-3.2.4, December 2013. DOI:10.1109/IEDM.2013.6724550

  220. C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, Fumihiro Matsukura, and H. Ohno, "Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO," Applied Physics Express, vol. 103, 262407 (3 pages), December 2013. DOI:10.1063/1.4859656

  221. E. C. I. Enobio, K. Ohtani, Y. Ohno, and H. Ohno, "Detection and measurement of electroreflectance on quantum cascade laser device using Fourier transform infrared microscope," Applied Physics Letters, vol. 103, 231106 (4 pages), December 2013. DOI:10.1063/1.4839421

  222. M. Kawaguchi, K. Shimamura, S. Fukami, F. Matsukura, H. Ohno, T. Moriyama, D. Chiba, and T. Ono, "Current-Induced Effective Fields Detected by Magnetotrasport Measurements," Applied Physics Express, vol. 6, 113002 (4 pages), October 2013. DOI:10.7567/APEX.6.113002

  223. D. Chiba, T. Ono, F. Matsukura, and H. Ohno, "Electric field control of thermal stability and magnetization switching in (Ga,Mn)As," Applied Physics Letters, vol. 103, 142418 (4 pages), October 2013. DOI:10.1063/1.4821778

  224. H. W. Chang, S. Akita, F. Matsukura, and H. Ohno, "Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure," Applied Physics Letters, vol. 103, 142402 (4 pages), September 2013. DOI:10.1063/1.4823592

  225. S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno, "Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents," Nature Communications, vol. 4, 2293 (6 pages), August 2013. DOI:10.1038/ncomms3293

  226. S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno, "In-plane magnetic field dependence of electric field-induced magnetization switching," Applied Physics Letters, vol. 103, 072408 (4 pages), August 2013. DOI:10.1063/1.4818676
  227. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis," IEEE Transactions on Magnetics, vol. 49, 4437 (4 pages), July 2013. DOI:10.1109/TMAG.2013.2251326
  228. S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, and H. Ohno, "CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition," Applied Physics Express, vol. 6, 073010 (3 pages), July 2013. DOI:10.7567/APEX.6.073010
  229. L. Chen, F. Matsukura, and H. Ohno, "Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance," Nature Communications, vol. 4, 3055 (6 pages), June 2013. DOI:10.1038/ncomms3055
  230. K.-J. Kim, R. Hiramatsu, T. Koyama, K. Ueda, Y. Yoshimura, D. Chiba, K. Kobayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, H. Kohno, G. Tatara, and T. Ono, "Two-barrier stability that allows low-power operation in current-induced domain-wall motion," Nature Communications, vol. 4, 3011 (6 pages), June 2013. DOI:10.1038/ncomms3011
  231. J. Sinha, M. Hayashi, A. J. Kellock, S. Fukami, M. Yamanouchi, H. Sato, S. Ikeda, S. Mitani, S.-H. Yang, S. S. P. Parkin, and H. Ohno, "Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers," Applied Physics Letters, vol. 102, 242405 (4 pages), June 2013. DOI:10.1063/1.4811269
  232. S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, and H. Ohno, "Electrical endurance of Co/Ni wire for magnetic domain wall motion device," Applied Physics Letters, vol. 102, 222410 (4 pages), June 2013. DOI:10.1063/1.4809734
  233. M. Yamanouchi, L. Chen, J. Kim, M. Hayashi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno, "Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper," Applied Physics Letters, vol. 102, 212408 (4 pages), May 2013. DOI:10.1063/1.4808033
  234. J. Ishihara, M. Ono, Y. Ohno, and H. Ohno, "A strong anisotropy of spin dephasing time of quasi-one dimensional electron gas in modulation-doped GaAs/AlGaAs wires," Applied Physics Letters, vol. 102, 212402 (4 pages), May 2013. DOI:10.1063/1.4807171
  235. K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, and H. Ohno, " Size Dependence of Magnetic Properties of Nanoscale CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance," Applied Physics Express, vol. 6, 063002 (3 pages), May 2013. DOI:10.7567/APEX.6.063002
  236. S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer," Journal of Applied Physics, vol. 113, 17C721 (3 pages), April 2013. DOI:10.1063/1.4798499
  237. H. Ohno, "Bridging semiconductor and magnetism," Journal of Applied Physics, vol. 113, 136509 (5 pages), March 2013. DOI:10.1063/1.4795537
  238. M. Ono, J. Ishihara, G. Sato, Y. Ohno, and H. Ohno, "Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field," Applied Physics Express, vol. 6, 033002 (3 pages), February 2013. DOI:10.7567/APEX.6.033002
  239. L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, and A. Hirohata, "Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films," Physical Review B, vol. 87, 022401 (5 pages), January 2013. DOI:10.1103/PhysRevB.87.024401

    2012
  240. J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani and H. Ohno, "Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO," Nature Materials, vol. 12, pp. 240-245, December 2012. DOI:10.1038/NMAT3522
  241. S. Ikeda, H. Sato, M. Yamanouchi, H. Gan, K. Miura, K. Mizunuma, S. Kanai, S. Fukami, F. Matsukura, N. Kasai and H. Ohno, "RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI," SPIN, vol. 2, 1240003 (12 pages), December 2012. DOI:10.1142/S2010324712400036
  242. A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S.-H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, and C. S. Fadley, "Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission," Applied Physics Letters, vol. 101, 202402 (4 pages), November 2012. DOI:10.1063/1.4766351
  243. S. Ikeda, R. Koizumi, H. Sato, M. Yamanouchi, K. Miura, K. Mizunuma, H. Gan, F. Matsukura, and H. Ohno , "Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures," IEEE Transactions on Magnetics, vol. 48, 3829 (4 pages), October 2012. DOI:10.1109/TMAG.2012.2203588
  244. S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno, "Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction," Applied Physics Letters, vol. 101, 122403 (3 pages), September 2012. DOI:10.1063/1.4753816
  245. D. Markó, T. Devolder, K. Miura, K. Ito, Joo-Von Kim, C. Chappert, S. Ikeda, and H. Ohno, "Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars," Journal of Applied Physics, vol. 112, 053922 (4 pages), September 2012. DOI:10.1063/1.4751025
  246. P. Das, A. Bajpai, Y. Ohno, H. Ohno, and J. Müller, "On the influence of nanometer-thin antiferromagnetic surface layer on ferromagnetic CrO2," Journal of Applied Physics, vol. 112, 053921 (4 pages), September 2012. DOI:10.1063/1.4751350
  247. K. Kinoshita, T. Yamamoto, H. Honjo, N. Kasai, S. Ikeda, and H. Ohno, "Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions," Japanese Journal of Applied Physics, vol. 51, 08HA01 (6 pages), August 2012. DOI:10.1143/JJAP.51.08HA01
  248. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure," Applied Physics Letters, vol. 101, 022414 (4 pages), July 2012. DOI:10.1063/1.4736727
  249. K.-J. Kim, D. Chiba, K. Kobayashi, S. Fukami, M. Yamanouchi, H. Ohno, S.-G. Je, S.-B. Choe, and T. Ono, "Observation of magnetic domain-wall dynamics transition in Co/Ni multilayered nanowires," Applied Physics Letters, vol. 101, 022407 (4 pages), July 2012. DOI:10.1063/1.4733667
  250. S. Fukami, N. Ishiwata, N. Kasai, M. Yamanouchi, H. Sato, S. Ikeda, and H. Ohno, "Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device," IEEE Transactions on Magnetics, vol. 48, 7 (6 pages), July 2012. DOI:10.1109/TMAG.2012.2187792
  251. E. C. I. Enobio, H. Sato, K. Ohtani, Y. Ohno, and H. Ohno , "Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope," Japanese Journal of Applied Physics, vol. 51, 06FE15 (3 pages), June 2012. DOI:10.1143/JJAP.51.06FE15
  252. M. Ghali, K. Ohtani, Y. Ohno, and H. Ohno, "Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons," Japanese Journal of Applied Physics, vol. 51, 06FE14 (3 pages), June 2012. DOI:0.1143/JJAP.51.06FE14
  253. M. Kawaguchi, K. Shimamura, S. Ono, S. Fukami, F. Matsukura, H. Ohno, D. Chiba, and T. Ono, "Electric Field Effect on Magnetization of an Fe Ultrathin Film," Applied Physics Express, vol. 5, 063007 (3 pages), June 2012. DOI:10.1143/APEX.5.063007
  254. Y. Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, and Teruo Ono, "Current-Induced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire under In-Plane Magnetic Fields," Applied Physics Express, vol. 5, 063001 (3 pages), May 2012. DOI:10.1143/APEX.5.063001
  255. M. Hayashi, M. Yamanouchi, S. Fukami, J. Sinha, S. Mitani, and H. Ohno, "Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures," Applied Physics Letters, vol. 100, 192411 (4 pages), May 2012. DOI:10.1063/1.4711016
  256. L. Li, Y. Guo, X. Y. Cui, R. Zheng, K. Ohtani, C. Kong, A. V. Ceguerra, M. P. Moody, J. D. Ye, H. H. Tan, C. Jagadish, Hui Liu, C. Stampfl, H. Ohno, S. P. Ringer, and F. Matsukura, "Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate," Physical Review B, vol. 85, 174430 (8 pages), May 2012. DOI:10.1103/PhysRevB.85.174430
  257. A. Brataas, A. D. Kent, and H. Ohno, "Current-induced torques in magnetic materials," Nature Materials, vol. 11 372 (10 pages), May 2012. DOI:10.1038/nmat3311
  258. S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, H. D. Gan, S. Ikeda, and H. Ohno, "Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures," Journal of Applied Physics, vol. 111, 083922 (7 pages), April 2012. DOI:10.1063/1.4707964
  259. H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, and H. Ohno, "CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions," IEEE Magnetics Letters, vol. 3, 3000204 (4 pages), April 2012. DOI:10.1109/LMAG.2012.2190722
  260. T. Kawahara, K. Ito, R. Takemura, and H. Ohno, "Spin-transfer torque RAM technology: Review and prospect," Microelectronics Reliability, vol. 52, pp. 613-627, April 2012. DOI:10.1016/j.microrel.2011.09.028
  261. D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal-Oxide-Semiconductor Hybrid Structure," Japanese Journal of Applied Physics, vol. 51, 04DM02 (5 pages), April 2012. DOI:10.1143/JJAP.51.04DM02
  262. H. Yamamoto, J. Hayakawa, K. Miura, K. Ito, H. Matsuoka, S. Ikeda, and H. Ohno, "Dependence of magnetic anisotropy in Co20Fe60B20 free layers on capping layers in MgO-based magnetic tunnel junctions with in-plane easy axis," Applied Physics Express, vol. 5, 053002 (3 pages), April 2012. DOI:10.1143/APEX.5.053002
  263. S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory," Journal of Applied Physics, vol. 111, 07E336 (3 pages), March 2012. DOI:10.1063/1.3677875
  264. H. Honjo, S. Fukami, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai and H. Ohno, "Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits," Journal of Applied Physics, vol. 111, 07C709 (4 pages), March 2012. DOI:10.1063/1.3675268
  265. H. Honjo, S. Fukami, T. Suzuki, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai and H. Ohno, "Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions," Journal of Applied Physics, vol. 111, 07C903 (4 pages), February 2012. DOI:10.1063/1.3671437
  266. M. Kodzuka, T. Ohkubo, K. Hono, S. Ikeda, H. D. Gan, and H. Ohno, "Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions, " Journal of Applied Physics, vol. 111, 043913 (4 pages), February 2012. DOI:10.1063/1.3688039
  267. M. Ghali, K. Ohtani, Y. Ohno and H. Ohno, "Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field," Nature Communications, vol. 3, 661 (6 pages), February 2012. DOI:10.1038/ncomms1657
  268. D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions," Journal of Applied Physics, vol. 111, 07E318 (3 pages), February 2012. DOI:10.1063/1.3672411
  269. S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory," Japanese Journal of Applied Physics, vol. 51, 02BM06 (5 pages), February 2012. DOI:10.1143/JJAP.51.02BM06
  270. F. Iga, Y. Yoshida, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme," Japanese Journal of Applied Physics, vol. 51, 02BM02 (5 pages), February 2012. DOI:10.1143/JJAP.51.02BM02
  271. T. Ohsawa, F. Iga, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction," Japanese Journal of Applied Physics, vol. 51, 02BD01 (6 pages), February 2012. DOI:10.1143/JJAP.51.02BD01
  272. R. Takemura, T. Kawahara, K. Ono, K. Miura, H. Matsuoka, H. Ohno, "Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond," Solid-State Electronics, vol. 58, pp. 1-2, January 2011. DOI:10.1109/IMW.2010.5488324
  273. M. Hayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, S. Mitani and H. Ohno, "Domain wall dynamics driven by spin transfer torque and the spin-orbit field," Journal of Physics: Condensed Matter, vol. 24, 024221 (9 pages), January 2012. DOI: 10.1088/0953-8984/24/2/024221

    2011
  274. H. D. Gan, H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, R. Koizumi, F. Matsukura, and H. Ohno, "Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions, " Applied Physics Letters, vol. 99, 252507 (4 pages), December 2011. DOI:10.1063/1.3671669
  275. K. Miura, R. Sugano, M. Ichimura, J. Hayakawa, S. Ikeda, H. Ohno, and S. Maekawa, "Reduction of intrinsic critical current density under a magnetic field along the hard axis of a free layer in a magnetic tunnel junction," Physical Review B, vol. 84, 174434 (5 pages), November 2011. DOI:10.1103/PhysRevB.84.174434
  276. M. Yamanouchi, A. Jander, P. Dhagat, S. Ikeda, F. Matsukura, and H. Ohno, "Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy," IEEE Magnetics Letters, vol. 2, 3000304 (4 pages), July 2011. DOI:10.1109/LMAG.2011.2159484
  277. P. Das, F. Porrati, S. Wirth, A. Bajpai, Y. Ohno, H. Ohno, M. Huth, and J. Muller, "Domain wall dynamics in a single CrO2 grain," Journal of Physics: Conference Series, vol. 303, 012056 (6 pages), July 2011. DOI:10.1088/1742-6596/303/1/012056
  278. H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, H. D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, and H. Ohno, "Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions," Applied Physics Letters, vol. 99, 042501 (3 pages), July 2011. DOI:10.1063/1.3617429
  279. S. Matsunaga, M. Natsui, S. Ikeda, K. Miura, T. Endoh, H. Ohno, and T. Hanyu, "Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme," Japanese Journal of Applied Physics, vol. 50, 063004 (7 pages), June 2011. DOI:10.1143/JJAP.50.063004
  280. H. D. Gan, S.Ikeda, M. Yamanouchi, K. Miura, K. Mizunuma, J. Hayakawa, F. Matsukura, and H. Ohno, "Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures," IEEE Transactions on Magnetics, vol. 47, 1567 (4 pages), June 2011. DOI:10.1109/TMAG.2010.2104137
  281. T. Devolder, L. Bianchini, K. Miura, K. Ito, Joo-Von Kim, P. Crozat, V. Morin, A. Helmer, C. Chappert, S. Ikeda, and H. Ohno, "Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions," Applied Physics Letters, vol. 98, 162502 (3 pages), April 2011. DOI:10.1063/1.3576937
  282. J. Ishihara, M. Ono, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno, "Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well," Japanese Journal of Applied Physics, vol. 50, 04DM03 (3 pages), April 2011. DOI:10.1143/JJAP.50.04DM03
  283. T. Suzuki, S. Fukami, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, and H. Ohno, "Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire," Applied Physics Letters, vol. 98, 142502 (3 pages), April 2011. DOI:10.1063/1.3579155
  284. M. Yamanouchi, R. Koizumi, S. Ikeda, H. Sato, K. Mizunuma, K. Miura, H. D. Gan, F. Matsukura, and H. Ohno, "Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure," Journal of Applied Physics, vol. 109, 07C712 (3 pages), March 2011. DOI:10.1063/1.3554204
  285. K. Mizunuma, S. Ikeda, H. Sato, M. Yamanouchi, H. D. Gan, K. Miura, H. Yamamoto, J. Hayakawa, F. Matsukura, and H. Ohno, "Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures," Journal of Applied Physics, vol. 109, 07C711 (3 pages), March 2011. DOI:10.1063/1.3554092
  286. S. Fukami, T. Suzuki, Y. Nakatani, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, and H. Ohno, "Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire," Applied Physics Letters, vol. 98, 082504 (3 pages), February 2011. DOI:10.1063/1.3558917
  287. K. Mizunuma, M. Yamanouchi, S. Ikeda, H. Sato, H. Yamamoto, H. D. Gan, K. Miura, J. Hayakawa, F. Matsukura, and H. Ohno, "Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers," Applied Physics Express, vol. 4, 023002 (3 pages), February 2011. DOI:10.1143/APEX.4.023002
  288. S. Kanai, M. Endo, S. Ikeda, F. Matsukura, and H. Ohno, "Magnetic Anisotropy Modulation in Ta/ CoFeB/ MgO Structure by Electric Fields," Journal of Physics: Conference Series, vol. 266, 012092 (5 pages), January 2011. DOI:10.1088/1742-6596/266/1/012092

    2010
  289. M. Endo, F. Matsukura, H. Ohno, "Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As," Applied Physics Letters, vol. 97, 222501 (3 pages), November 2010. DOI:10.1063/1.3520514
  290. H. Ohno, "A window on the future of spintronics," Nature Materials, vol. 9, pp. 952-954, November 2010. DOI:10.1038/nmat2913
  291. D. Chiba, F. Matsukura, and H. Ohno, "Electrically Defined Ferromagnetic Nanodots," Nano Letters, vol. 10, pp. 4505-4508, November 2010. DOI:10.1021/nl102379h
  292. A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko, A. Ohtomo, and M. Kawasaki, "Observation of the fractional quantum Hall effect in an oxide," Nature Materials, vol. 9, pp. 889-893, November 2010. DOI:10.1038/NMAT2874
  293. M. Kohda, J. Ogawa, J. Shiogai, F. Matsukura, Y. Ohno, H. Ohno, J. Nitta, "Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires," Physica E, vol. 42, pp. 2685-2689, October 2010. DOI:10.1016/j.physe.2009.12.019
  294. Y. Nishitani, M. Endo, F. Matsukura, H. Ohno, "Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film," Physica E, vol. 42, pp. 2681-2684, October 2010. DOI:10.1016/j.physe.2009.12.054
  295. J. Misuraca, J. Trbovic, J. Lu, J. Zhao, Y. Ohno, H. Ohno, P. Xiong, and S. V. Molnﾃ｡r, "Band-tail shape and transport near the metal-insulator transition in Si-doped Al0.3Ga0.7As," Physical Review B, vol. 81, 045208 (6 pages), September 2010. DOI:10.1103/PhysRevB.82.125202
  296. S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction, " Nature Materials, vol. 9, pp. 721-724, August 2010. DOI:10.1038/NMAT2804
  297. S. Matsuzaka, Y. Ohno, and H. Ohno, "Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopy," Physica E, vol. 42, pp. 2702-2706 (5 pages), August 2010. DOI:10.1016/j.physe.2010.08.006
  298. A. Kanda, A. Suzuki, F. Matsukura, and H. Ohno, "Domain wall creep in (Ga,Mn)As," Applied Physics Letters, vol. 97, 032504 (3 pages), July 2010. DOI:10.1063/1.3467048
  299. M. Endo, S. Kanai, S. Ikeda, F. Matsukura, and H. Ohno, "Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures," Applied Physics Letters, vol. 96, 212503 (3 pages), May 2010. DOI:10.1063/1.3429592
  300. H. D. Gan, S. Ikeda, W. Shiga, J. Hayakawa, K. Miura, H. Yamamoto, H. Hasegawa, F. Matsukura, T. Ohkubo, K. Hono, and H. Ohno, "Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions," Applied Physics Letters, vol. 96, 192507 (3 pages), May 2010. DOI:10.1063/1.3429594
  301. D. Chiba, Y. Nakatani, F. Matsukura, and H. Ohno, "Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy," Applied Physics Letters, vol. 96, 192506 (3 pages), May 2010. DOI:10.1063/1.3428959
  302. T. Endoh, F. Iga, S. Ikeda, K. Miura, J. Hayakawa, M. Kamiyanagi, H. Hasegawa, T. Hanyu, and H. Ohno, "The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal-Oxide-Semiconductor Circuits," Japanese Journal of Applied Physics, vol. 49, 04DM06 (5 pages), April 2010. DOI:10.1143/JJAP.49.04DM06
  303. S. Matsunaga, M. Natsui, K. Hiyama, T. Endoh, H. Ohno, and T. Hanyu, "Fine-Grained Power-Gating Scheme of a Metal-Oxide-Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory," Japanese Journal of Applied Physics, vol. 49, 04DM05 (5 pages), April 2010. DOI:10.1143/JJAP.49.04DM05
  304. K. Mizunuma, S. Ikeda, H. Yamamoto, H. D. Gan, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, H. Ohno, "CoFeB inserted perpendicular magnetic tunnel junctions with CoFe/Pd multilayers for high tunnel magnetoresistance ratio," Japanese Journal of Applied Physics, vol. 49, 04DM04 (4 pages), April 2010. DOI:10.1143/JJAP.49.04DM04
  305. R. Takemura, T. Kawahara, K. Miura, H. Yamamoto, J. Hayakawa, N. Matsuzaki, K. Ono, M. Yamanouchi, K. Ito, H. Takahashi, S. Ikeda, H. Hasegawa, H. Matsuoka, and H. Ohno, "A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme," IEEE Journal of Solid-State Circuits, vol. 45, pp. 869-879, April 2010. DOI:10.1109/JSSC.2010.2040120
  306. S. R. Dunsiger, J. P. Carlo, T. Goko, G. Nieuwenhuys, T. Prokscha, A. Suter, E. Morenzoni, D. Chiba, Y. Nishitani, T. Tanikawa, F. Matsukura, H. Ohno, J. Ohe, S. Maekawa, and Y. J. Uemura, "Spatially homogeneous ferromagnetism of (Ga, Mn)As," Nature Materials, vol. 9, pp. 299-303, April 2010. DOI:10.1038/NMAT2715
  307. T. Takahashi, S. Matsuzaka, Y. Ohno, and H. Ohno, "Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well," Physica E, vol. 42, pp. 2609-2701, March 2010. DOI:10.1016/j.physe.2010.03.026
  308. D. Chiba, A. Werpachowska, M. Endo, Y. Nishitani, F. Matsukura, T. Dietl, and H. Ohno, "Anomalous Hall effect in field-effect structures of (Ga,Mn)As," Physical Review Letters, vol. 104, 106601 (4 pages), March 2010. DOI:10.1103/PhysRevLett.104.106601
  309. S. Marcet, K. Ohtani, and H. Ohno, "Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot," Applied Physics Letters, vol. 96, 101117 (3 pages), March 2010. DOI:10.1063/1.3360212
  310. M. Ono, H. Kobayashi, S. Matsuzaka, Y. Ohno, and H. Ohno, "Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well," Applied Physics Letters, vol. 96, 071907 (3 pages), February 2010. DOI:10.1063/1.3309687
  311. X. Kozina, S. Ouardi, B. Balke, G. Stryganyuk, G. H. Fecher, C. Felser, S. Ikeda, H. Ohno, and E. Ikenaga, " A nondestructive analysis of the B diffusion in Ta-CoFeB-MgO-CoFeB-Ta magnetic tunnel junctions by hard x-ray photoemission," Applied Physics Letters, vol. 96, 072105 (3 pages), €February 2010. DOI:10.1063/1.3309702
  312. Y. Nishitani, D. Chiba, M. Endo, M. Sawicki, F. Matsukura, T. Dietl, and €H. Ohno, "Curie temperature versus hole concentration in field-effect structures of (Ga,Mn)As," Physical Review B, vol. 81, 045208 (8 pages), January 2010. DOI:10.1103/PhysRevB.81.045208
  313. M. Endo, D. Chiba, H. Shimotani, F. Matsukura, Y. Iwasa, and H. Ohno, "Electric double layer transistor with a (Ga, Mn)As channel," Applied Physics Letters, vol. 96, 022515 (3 pages), January 2010. DOI:10.1063/1.3277146
  314. M. Ono, S. Matsuzaka, Y. Ohno, and H. Ohno, "Gate voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well," Journal of Superconductivity and Novel Magnetism, vol. 23, 131 (3 pages), January 2010. DOI:10.1007/s10948-009-0568-4
  315. S. Matsuzaka, Y. Ohno, and H. Ohno, "Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration," Journal of Superconductivity and Novel Magnetism, vol. 23, 37 (3 pages), January 2010. DOI:10.1007/s10948-009-0558-6
  316. M. Sawicki, D. Chiba, A. Korbecka, Y. Nishitani, J. A. Majewski, F. Matsukura, T. Dietl, and H. Ohno, "Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As," Nature Physics, vol. 6, pp. 22-25, January 2010. DOI:10.1038/NPHYS1455

    2009
  317. K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, and H. Ohno, "MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers," Applied Physics Letters, vol. 95, 232516 (3 pages), December 2009. DOI:10.1063/1.3265740
  318. S. Matsuzaka, Y. Ohno, and H. Ohno, "Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy ," Physical Review B, vol. 80, 241305(R) (4 pages), December 2009. DOI:10.1103/PhysRevB.80.241305
  319. J. H. Park, S. Ikeda, H. Yamamoto, H. Gan, K. Mizunuma, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, and H. Ohno, "Perpendicular magnetic tunnel junctions with CoFe/Pd multilayer electrodes and an MgO barrier," IEEE Transactions on Magnetics, vol. 45, pp. 3476-3479, September 2009. DOI:10.1109/TMAG.2009.2023237
  320. S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, S. Ikeda, and H. Ohno, "Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures," Journal of Applied Physics, vol. 106, 023920 (5 pages), July 2009. DOI:10.1063/1.3182817
  321. T. Devolder, J. V. Kim, C. Chappert, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, and H. Ohno, "Direct measurement of current-induced fieldlike torque in magnetic tunnel junctions," Journal of Applied Physics, vol. 105, 113924 (5 pages), June 2009. DOI:10.1063/1.3143033
  322. K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno, "Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells," Applied Physics Letters, vol. 94, 162104 (3 pages), April 2009. DOI:10.1063/1.3118584
  323. K. Ohtani, M. Belmoubarik, and H. Ohno, "Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy," Journal of Crystal Growth, vol. 311, pp. 2176-2178, March 2009. DOI:10.1016/j.jcrysgro.2008.09.134
  324. M. Kodzuka, T. Ohkubo, K. Hono, F. Matsukura, and H. Ohno, "3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film," Ultramicroscopy, vol. 109, pp. 644-648, March 2009. DOI:10.1016/j.ultramic.2008.11.011
  325. Y. Nishitani, D. Chiba, F. Matsukura, and H. Ohno, "ac susceptibility of (Ga, Mn)As probed by the anomalous Hall effect," Journal of Applied Physics, vol. 105, 07C516 (3 pages), March 2009. DOI:10.1063/1.3072078
  326. S. Matsunaga, K. Hiyama, A. Matsumoto, S. Ikeda, H. Hasegawa, K. Miura, J. Hayakawa, T. Endoh, H. Ohno, and T. Hanyu, "Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices," Applied Physics Express, vol. 2, 023004 (3 pages), February 2009. DOI:10.1143/APEX.2.023004
  327. T. T. Lin, K. Ohtani, and H. Ohno, "Thermally activated ongitudinal optical phonon scattering of a 3.8 THz GaAs quantum cascade laser ," Applied Physics Express, vol. 2, 022102 (3 pages), January 2009. DOI:10.1143/APEX.2.022102

    2008
  328. M. Sekikawa, K. Kiyoyama, H. Hasegawa, K. Miura, T. Fukushima, S. Ikeda, T. Tanaka, H. Ohno, and M. Koyanagi, "A novel SPRAM (spin-transfer torque RAM)-based reconfigurable logic block for 3D-stacked reconfigurable spin processor," in digests of technical papers of 2008 IEEE International Electron Devices Meeting (IEDM 2008), pp. 935-937, December 2008. DOI:10.1109/IEDM.2008.4796645
  329. A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, and M. Kawasaki, "Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric," Applied Physics Letters, vol. 93, 241905 (3 pages), December 2008. DOI:10.1063/1.3035844
  330. Y. Kondo, M. Ono, S. Matsuzaka, K. Morita, H. Sanada, Y. Ohno, and H. Ohno, "Multipulse operation and optical detection of nuclear spin coherence in a GaAs/AlGaAs quantum well," Physical Review Letters, vol. 101, 207601 (4 pages), November 2008. DOI:10.1103/PhysRevLett.101.207601
  331. D. Chiba, M. Sawicki, Y. Nishitani, Y. Nakatani, F. Matsukura, and H. Ohno, "Magnetization vector manipulation by electric fields," Nature, vol. 455, pp. 515-518, September 2008. DOI:10.1038/nature07318
  332. Y. Pu, D. Chiba, F. Matsukura, H. Ohno, and J. Shi, " Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors," Physical Review Letters, vol. 101, 117208 (4 pages), September 2008. DOI:10.1103/PhysRevLett.101.117208
  333. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, "Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature," Applied Physics Letters, vol. 93, 082508 (3 pages), August 2008. DOI:10.1063/1.2976435
  334. S. Matsunaga, J. Hayakawa, S. Ikeda, K. Miura, H. Hasegawa, T. Endoh, H. Ohno, and T. Hanyu, "Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions," Applied Physics Express, vol. 1, 091301 (3 pages), August 2008. DOI:10.1143/APEX.1.091301
  335. J. Hayakawa, S. Ikeda, K. Miura, M. Yamanouchi, Y. M. Lee, R. Sasaki, M. Ichimura, K. Ito, T. Kawahara, R. Takemura, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB-based synthetic ferrimagnetic free layers," IEEE Transactions on Magnetics, vol. 44, pp. 1962-1967, July 2008. DOI:10.1109/TMAG.2008.924545
  336. C. Gould, S. Mark, K. Pappert, R. G. Dengel, J. Wenisch, R. P. Campion, A. W. Rushforth, D. Chiba, Z. Li, X. Liu, W. Van Roy, H. Ohno, J. K. Furdyna, B. Gallagher, K. Brunner, G. Schmidt, and L. W. Molenkamp, "An extensive comparison of anisotropies in MBE grown (Ga, Mn)As material," New Journal of Physics, vol. 10, 055007 (10 pages), May 2008. DOI:10.1088/1367-2630/10/5/055007
  337. M. Belmoubarik, K. Ohtani, and H. Ohno, "Intersubband transitions in ZnO multiple quantum wells," Applied Physics Letters, vol. 92, 191906 (3 pages), May 2008. DOI:10.1063/1.2926673
  338. G. Ghosh, D. W. Steuerman, B. Maertz, K. Ohtani, Huaizhe Xu, H. Ohno, and D. D. Awschalom, "Electrical control of spin coherence in ZnO," Applied Physics Letters, vol. 92, 162109 (3 pages), April 2008. DOI:10.1063/1.2913049
  339. M. Czapkiewicz, P. Zagrajek, J. Wrobel, G. Grabecki, F. Fronc, T. Dietl, Y. Ohno, S. Matsuzaka, and H. Ohno, "0.7 anomaly and magnetotransport of disordered quantum wire," Europhysics Letters, vol. 82, 27003 (6 pages), April 2008. DOI:10.1209/0295-5075/82/27003
  340. O. B. Agafonov, T. Kita, H. Ohno, and R. J. Haug, "Fine structure in magnetospectrum of vertical quantum dot," Physica E, vol. 40, pp. 1630-1632, April 2008. DOI:10.1016/j.physe.2007.10.006
  341. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator," Physica E. vol. 40, pp. 1930-1932, April 2008. DOI:10.1016/j.physe.2007.08.140
  342. S. Marcet, T. Kita, K. Ohtani, and H. Ohno, "The effect of vertical electric fields on exciton fine structure of GaAs natural quantum dots," Physica E, vol. 40, pp. 2069-2071, April 2008. DOI:10.1016/j.physe.2007.09.106
  343. Y. Nishitani, D. Chiba, F. Matsukura, and H. Ohno, "Electrical Curie temperature modulation in (Ga, Mn)As field-effect transistors with Mn composition from 0.027 to 0.2," Journal of Applied Physics, vol. 103, 07D139 (3 pages), April 2008. DOI:10.1063/1.2838159
  344. D. Chiba, K. M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, and H. Ohno, "Properties of Ga1-xMnxAs with high x (>0.1)," Journal of Applied Physics, vol. 103, 07D136 (3 pages), April 2008. DOI:10.1063/1.2837469
  345. H. Ohno and T. Dietl, "Spin-transfer physics and the model of ferromagnetism in (Ga, Mn)As," Journal of Magnetism and Magnetic Materials, vol. 320, pp. 1293-1299, April 2008.  DOI:10.1016/j.jmmm.2007.12.016
  346. T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, J. A. Katine, M. J. Carey, P. Crozat, J. V. Kim, C. Chappert, and H. Ohno, "Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures," Journal of Applied Physics, vol. 103, 07A723 (6 pages), March 2008. DOI:10.1063/1.2839341
  347. T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, P. Crozat, N. Zerounian, Joo-Von Kim, C. Chappert, and H. Ohno, "Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: stochastic versus deterministic aspects," Physical Review Letters, vol. 100, 057206 (4 pages), February 2008. DOI:10.1103/PhysRevLett.100.057206
  348. T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "2 Mb SPRAM (SPin-Transfer Torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read," IEEE Journal of Solid-State Circuits, vol. 43, pp. 109-120, January 2008. DOI:10.1109/JSSC.2007.909751
  349. K. Ohtani, H. Ohnishi, and H. Ohno, "Simultaneous lasing of interband and intersubband transitions in InAs/AlSb quantum cascade laser structures," Applied Physics Letters, vol. 92, 041102 (3 pages), January 2008. DOI:10.1063/1.2838296

    2007
  350. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "A few-electron  vertical In0.56Ga0.44As quantum dot with an insulating gate,"  Applied Physics Letters, vol. 91,  232101 (3 pages), December 2007. (Top 20 most downloaded article(December 2007))  DOI:10.1063/1.2818712
  351. T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "2-Mb SPRAM design: bi-directional current write and parallelizing-direction current read based on spin-transfer torque switching," Physica Status Solidi A, vol. 204, pp. 3929-3933, December 2007. DOI:10.1002/pssa.200777120
  352. M. Yamanouchi, J. Ieda, F. Matsukura, S. E. Barnes, S. Maekawa, and H. Ohno, "Universality classes for domain wall motion in the ferromagnetic semiconductor (Ga, Mn)As," Science, vol. 317, pp. 1726-1729, September 2007. DOI:10.1126/science.1145516
  353. T. Jungwirth, Jairo Sinova, A. H. MacDonald, B. L. Gallagher, V. Novﾃ｡k, K. W. Edmonds, A. W. Rushforth, R. P. Campion, C. T. Foxon, L. Eaves, E. Olejnfk, J. Maﾅ｡ek, S. -R. Eric Yang, J. Wunderlich, C. Gould, L. W. Molenkamp, T. Dietl, and H. Ohno, "Character of states near the Fermi level in (Ga, Mn)As: Impurity to valence band crossover," Physical Review B, vol. 76, 125206 (9 pages), September 2007. DOI:10.1103/PhysRevB.76.125206
  354. M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, and H. Ohno, "Channel thickness dependence of the magnetic properties in (Ga, Mn)As FET structures," Journal of Superconductivity and Novel Magnetism,  vol. 20,  pp.  409-411, August 2007. DOI:10.1007/s10948-007-0242-7
  355. M. Fukuda, M. Yamanouchi, F. Matsukura, and H. Ohno, "Switching of tunnel magnetoresistance by domain wall motion in (Ga, Mn)As-based magnetic tunnel junctions,"  Applied Physics Letters, vol. 91, 052503 (3 pages), July 2007. DOI:10.1063/1.2767230
  356. K. Ohtani, Y. Moriyasu, H. Ohnishi, and H. Ohno, "Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12μ m," Applied Physics Letters, vol. 90, 261112 (3 pages), June 2007. DOI:10.1063/1.2752771
  357. Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno, "Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier,"  Applied Physics Letters, vol. 90,  212507 (3 pages), May 2007.  DOI:10.1063/1.2742576
  358. T. Dietl, H. Ohno, and F. Matsukura, "Ferromagnetic semiconductor heterostructures for spintronics," IEEE Transactions on Electron Devices, vol. 54, No. 5, pp. 945-954, May 2007. DOI:10.1109/TED.2007.894622
  359. S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, T. Hanyu, and H. Ohno, "Magnetic tunnel junctions for spintronic memories and beyond," IEEE Transactions on Electron Devices, vol. 54, No. 5, 991-1002 pages, May 2007. DOI:10.1109/TED.2007.894617
  360. K. Ohtani, K. Fujita, and H. Ohno, "Room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 ﾂｵm," Electronics Letters, vol. 43, pp. 520-522, April 2007. DOI:10.1049/el:20070251
  361. D. Chiba, Y. Nishitani, F. Matsukura, and H. Ohno, "Properties of Ga1-xMnxAs with high Mn composition (x>0.1)," Applied Physics Letters, vol. 90, 122503 (3 pages), March 2007. DOI:10.1063/1.2715095
  362. S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, and H. Ohno, "Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions," Journal of Magnetism and Magnetic Materials, vol. 310, pp. 1937-1939, March 2007. DOI:10.1016/j.jmmm.2006.10.770
  363. D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, and H. Ohno, "Domain wall resistance in perpendicularly magnetized (Ga, Mn)As," Journal of Magnetism and Magnetic Materials, vol. 310, pp. 2078-2083, March 2007. DOI:10.1016/j.jmmm.2006.10.1119
  364. A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, and M. Kawasaki, "Quantum Hall effect in polar oxide heterostructures," Science, vol. 315, pp. 1388-1391, March 2007. DOI:10.1126/science.1137430
  365. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "(In, Ga)As gated-vertical quantum dot with an Al2O3 insulator," Applied Physics Letters, vol. 90, 062102 (3 pages), February 2007. DOI:10.1063/1.2437060
  366. T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "2 Mb spin-transfer torque RAM (SPRAM) with bit-by-bit bidirectional current write and parallelizing-direction current read," in digest of technical papers of 2007 IEEE International Solid-State Circuits Conference (ISSCC 2007), pp. 480-481, February 2007. DOI:10.1109/ISSCC.2007.373503
  367. H. -J. Lee, D. Chiba, F. Matsukura, and H. Ohno, "Effect of substrate temperature on the properties of heavily Mn-doped GaAs," Journal of Crystal Growth, vol. 301-302, pp. 264-267, January 2007. DOI:10.1016/j.jcrysgro.2006.11.155
  368. H. Ohno, "Physics and materials of spintronics in semiconductors," Physica Status Solidi (c), vol. 3, pp. 4057-4061, January 2007. DOI:10.1002/pssc.200672893
  369. T. Yamada, D. Chiba, F. Matsukura, S. Yakata, and H. Ohno, "Magnetic anisotropy in (Ga, Mn)As probed by magnetotransport measurements," Physica Status Solidi (c), vol. 3, pp. 4086-4089, January 2007. DOI:10.1002/pssc.200672877
  370. T. Kita, M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno, "Spin injection with three terminal device based on (Ga, Mn)As/n+-GaAs tunnel junction," Physica Status Solidi (c), vol. 3, pp. 4164-4167, January 2007. DOI:10.1002/pssc.200672865


    2006
  371. J. Hayakawa, S. Ikeda, Y. M. Lee, F. Matsukura, and H. Ohno, "Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions," Applied Physics Letters, vol. 89, 232510 (3 pages), December 2006. DOI:10.1063/1.2402904
  372. T. Dietl and H. Ohno, "Engineering magnetism in semiconductors," Materials Today, vol. 9, pp. 18-26, November 2006. DOI:10.1016/S1369-7021(06)71691-1
  373. D. Chiba, F. Matsukura, and H. Ohno, "Electric-field control of ferromagnetism in (Ga,Mn)As," Applied Physics Letters, vol. 89, 162505 (3 pages), October 2006. DOI:10.1063/1.2362971
  374. J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, and H. Ohno, "Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferromagnetic free layer," Japanese Journal of Applied Physics, vol. 45, pp. L1057-L1060, October 2006. DOI:10.1143/JJAP.45.L1057
  375. J. Mﾃｼller, Y. Li, S. von Molnár, Y. Ohno, and H. Ohno, "Single-electron switching in AlxGa1-xAs/GaAs Hall devices," Physical Review B, vol. 74, 125310 (7 pages), September 2006. DOI:10.1103/PhysRevB.74.125310
  376. H. Xu, K. Ohtani, M. Yamao, and H. Ohno, "Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy," Applied Physics Letters, vol. 89, 071918 (3 pages), August 2006. DOI:10.1063/1.2337541
  377. Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno, "Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer," Applied Physics Letters, vol. 89, 042506 (3 pages), July 2006. DOI:10.1063/1.2234720
  378. M. Kohda, T. Kita, Y. Ohno, F. Matsukura, and H. Ohno, "Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As/n+-GaAs Esaki diode," Applied Physics Letters, vol. 89, 012103 (3 pages), July 2006. DOI:10.1063/1.2219141
  379. D. Chiba, F. Matsukura, and H. Ohno, "Electrical magnetization reversal in ferromagnetic semiconductors," Journal of Physics D: Applied Physics, vol. 39, pp. R215-R225, June 2006. DOI:10.1088/0022-3727/39/13/R01. Physics
  380. M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno, "Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction," Physica E, vol. 32, pp. 438-441, May 2006. DOI:10.1016/j.physe.2005.12.085
  381. J. Mﾃｼller, S. von Molnár, Y. Ohno, and H. Ohno, "Decomposition of 1/f noise in AlxGa1-xAs/GaAs Hall devices," Physical Review Letters, vol. 96, 186601 (4 pages), May 2006. DOI:10.1103/PhysRevLett.96.186601
  382. M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno, "Current-assisted domain wall motion in ferromagnetic semiconductors," Japanese Journal of Applied Physics, vol. 45, pp. 3854-3859, May 2006. DOI: 10.1143/JJAP.45.3854
  383. T. Sakaguchi, H. Choi, S. J. Ahn, T. Sugimura, M. Park, M. Oogane, H. Oh, J. Hayakawa, S. Ikeda, Y. M. Lee, T. Fukushima, T. Miyazaki, H. Ohno, and M. Koyanagi, "Fabrication and evaluation of magnetic tunnel junction with MgO tunneling barrier," Japanese Journal of Applied Physics, vol. 45, pp. 3228-3232, April 2006. DOI: 10.1143/JJAP.45.3228
  384. S. Ikeda, J. Hayakawa, Y. M. Lee, T. Tanikawa, F. Matsukura, and H. Ohno, "Tunnel magnetoresistance in MgO-barrier magnetic tunnel junction with bcc-CoFe(B) and fcc-CoFe free layers," Journal of Applied Physics, vol. 99, pp. 08A907 (3 pages), April 2006. DOI:10.1063/1.2176588
  385. D. Chiba, T. Kita, F. Matsukura, and H. Ohno, "Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga, Mn)As magnetic tunnel junction," Journal of Applied Physics, vol. 99, 08G514 (3 pages), April 2006. DOI:10.1063/1.2170063
  386. H. Ohno, "Ferromagnetic semiconductors for spintronics," Physica B, vol. 376-377, pp. 19-21, April 2006. DOI:10.1016/j.physb.2005.12.007
  387. H. Xu, K. Ohtani, M. Yamao, and H. Ohno, "Control of ZnO(000-1)/Al2O3(11-20) surface morphologies using plasma-assisted molecular beam epitaxy," Physica Status Solidi (b), vol. 243, pp. 773-777, March 2006. DOI:10.1002/pssb.200564657
  388. D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, and H. Ohno, "Domain-wall resistance in ferromagnetic (Ga, Mn)As," Physical Review Letters, vol. 96, 096602 (4 pages), March 2006. DOI:10.1103/PhysRevLett.96.096602
  389. M. Yamanouchi, D. Chiba, F. Matsukura, T. Dietl, and H. Ohno, "Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga, Mn)As," Physical Review Letters, vol. 96, 096601 (4 pages), March 2006. DOI:10.1103/PhysRevLett.96.096601
  390. H. Sanada, Y. Kondo, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno, "Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells," Physical Review Letters, vol. 96, 067602 (4 pages), February 2006. DOI:10.1103/PhysRevLett.96.067602
  391. J. Nishii, A. Ohtomo, M. Ikeda, Y. Yamada, K. Ohtani, H. Ohno, and M. Kawasaki, "Synthesis and characterization of MgCaO films as a lattice and balence-matched gate dielectric for ZnO based fields effect transistor," Applied Surface Science, vol. 252, pp. 2507-2511, January 2006. DOI:10.1016/j.apsusc.2005.06.040


    2005
  392. S. Ikeda, J. Hayakawa, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, and H. Ohno, "Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering," Japanese Journal of Applied Physics, vol. 44, pp. L1422-L1445, November 2005. DOI:10.1143/JJAP.44.L1442
  393. K. Ohtani, K. Fujita, and H. Ohno, "Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers," Applied Physics Letters, vol. 87, 211113 (3 pages), November 2005. DOI:10.1063/1.2136428
  394. K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno, and H. Ohno, "Strong anisotropic spin dynamics in narrow n-InGaAs/AlGaAs (110) quantum wells," Applied Physics Letters, vol. 87, 171905 (3 pages), October 2005. DOI:10.1063/1.2112193
  395. C. Y. Hu, K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno, "Spin precession of holes in Wurtzite GaN studied using time-resolved Kerr rotation technique," Physical Review B, vol. 72, 121203 (4 pages), September 2005. DOI:10.1103/PhysRevB.72.121203
  396. J. Nishii, A. Ohtomo, K. Ohtani, H. Ohno and M. Kawasaki, "High-mobility field-effect transistors based on single-crystalline ZnO channels," Japanese Journal of Applied Physics, vol. 44, pp. L1193-L1195, September 2005. DOI: 10.1143/JJAP.44.L1193
  397. J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, H. Ohno, "Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions," Japanese Journal of Applied Physics, vol. 44, pp. L1267-L1270, September 2005. DOI: 10.1143/JJAP.44.L1267
  398. J. Inoue and H. Ohno, "Taking the Hall effect for a spin," Science, vol. 309, pp. 2004-2005, September 2005. DOI:10.1126/science.1113956
  399. G. Mihajlovic, P. Xiong, S. von Molánr, K. Ohtani, H. Ohno, M. Field, and G. J. Sullivan, "Detection of single magnetic bead for biological applications using an InAs quantum-well micro-Hall sensor," Applied Physics Letters, vol. 87, 112502 (3 pages), September 2005. DOI:10.1063/1.2043238
  400. Y. Sato, D. Chiba, F. Matsukura, and H. Ohno, "Effect of GaAs intermediary layer thickness on the properties of (Ga,Mn)As tri-layer structures," Journal of Superconductivity: Incorporating Novel Magnetism, vol. 18, pp. 345-347, June 2005. DOI:10.1007/s10948-005-0008-z
  401. Y. Li, P. Xiong, S. von Molnár, Y. Ohno, and H. Ohno, "Magnetization reversal in elongated Fe nanoparticles," Physical Review B, vol. 71, 214425 (6 pages), June 2005. DOI:10.1103/PhysRevB.71.214425
  402. J. Hayakawa, H. takahashi, K. Ito, M. Fujimori, S. Heike, T. Hashizume, M. Ichimura, S. Ikeda, and H. Ohno, "Current-driven magnetization reversal in exchange-biased spin-valve nanopillars," Journal of Applied Physics, vol. 97, pp. 114321-114323, June 2005. DOI:10.1063/1.1927707

  403. A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu and M. Kawasaki, "Blue light-emitting diode based on ZnO," Japanese Journal of Applied Physics, vol. 44, pp. L643-L645, May 2005. DOI:10.1143/JJAP.44.L643
  404. K. Ohtani, K. Fujita, and H. Ohno, "InAs quantum cascade lasers based on coupled quantum well structures," Japanese Journal of Applied Physics, vol. 44, pp. 2572-2574, April 2005. DOI:10.1143/JJAP.44.2572
  405. J. Müller, Y. Li, S. von Molnár, Y. Ohno, and H. Ohno, "Low-frequency noise in submicron GaAs/AlxGa1-xAs Hall devices," Journal of Magnetism and Magnetic Materials, vol. 290-291, pp. 1161-1164, April 2005. DOI:10.1016/j.jmmm.2004.11.502
  406. J. Hayakawa, S. Ikeda, F. Matsukura, H. Takahashi, and H. Ohno, "Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature," Japanese Journal of Applied Physics, vol.44, pp. L587-L589, April 2005. DOI: 10.1143/JJAP.44.L587
  407. H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno, "Gate control of dynamic nuclear polarization in GaAs quantum wells," Physical Review Letters vol. 94, 097601 (4 pages), March 2005. DOI:10.1103/PhysRevLett.94.097601

    2004

  408. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, "Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO," Nature Materials, vol. 4, pp. 42-46, December 2004. DOI:10.1038/nmat1284
  409. Y. Li, C. Ren, P. Xiong, S. von Molánr, Y. Ohno, and H. Ohno, "Modulation of noise in submicron GaAs/AlGaAs Hall devices by gating," Physical Review Letters, vol. 93, 246602 (4 pages), December 2004. DOI:10.1103/PhysRevLett.93.246602
  410. D. Chiba, Y. Sato, T. Kita, F. Matsukura, and H. Ohno "Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction," Physical Review Letters, vol. 93, 216602 (4 pages), November 2004. DOI:10.1103/PhysRevLett.93.216602
  411. D. Chiba, M. Yamanouchi, F. Matsukura, and H. Ohno, "Control of magnetization reversal in ferromagnetic semiconductors by electrical means," Journal of Physics: Condensed Matter, vol. 16, pp. S5693-S5696, November 2004. DOI:10.1088/0953-8984/16/48/029
  412. I. Suzuki, A. Ohtomo, A. Tsukazaki, F. Sato, J. Nishii, H. Ohno, and M. Kawasaki, "Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO4 heterointerface," Advanced Materials, vol. 16, pp. 1887-1890, November 2004. DOI:10.1002/adma.200401018
  413. J. Hayakawa, K. Ito, M. Fujimori, S. Heike, T. Hashizume, J. Steen, J. Brugger and H. Ohno, "Current-driven switching of exchange biased spin-valve giant magnetoresistive naopillars using a conducting nanoprobe," Journal of Applied Physics, vol. 96, pp. 3440-3442, September 2004. DOI:10.1063/1.1769605
  414. E. Abe, K. Sato, F. Matsukura, J. H. Zhao, Y. Ohno and H. Ohno, "Molecular beam epitaxy and properties of Cr-doped GaSb," Journal of Superconductivity, vol. 17, pp. 349-352, June 2004. DOI:10.1023/B:JOSC.0000034257.19841.be
  415. K. Ohtani, K. Fujita and H. Ohno,"A low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 ﾂｵm," Japanese Journal of Applied Physics,  vol. 43, pp. L879-L881, June 2004. DOI:10.1143/JJAP.43.L879
  416. H. Ohno, "Ferromagnetic semiconductor heterostructures," Journal of Magnetism and Magnetic Materials, vol. 272-276, pp. 1-6, May 2004. DOI:10.1016/j.jmmm.2003.12.961
  417. J. Hayakawa, M. Fujimoria, S. Heikea, M. Ishibashia, T. Hashizumea, K. Ito and H. Ohno, "Electrical properties of the patterned Co/Cu/Co sub-micron dots using a probe contact," Journal of Magnetism and Magnetic Materials, vol. 272-276, pp. E1443-E1445, May 2004. DOI:10.1016/j.jmmm.2003.12.730
  418. M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno, "Current-induced domain-wall switching in a ferromagnetic semiconductor structure," Nature, vol. 428, pp. 539-542, April 2004. DOI:10.1038/nature02441
  419. F. Matsukura, M. Sawicki, T. Dietl, D. Chiba and H.Ohno, "Magnetotransport properties of metallic (Ga, Mn)As films with compressive and tensile strain," Physica E, vol. 21, pp. 1032-1036, March 2004. DOI:10.1016/j.physe.2003.11.165
  420. K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno and H. Ohno, "Electron spin dynamics in InGaAs quantum wells," Physica E, vol. 21, pp. 1007-1011, March 2004. DOI:10.1016/j.physe.2003.11.160
  421. D. Chiba, F. Matsukura, H. Ohno, "Tunneling magnetoresistance in (Ga, Mn)As-based heterostructures with a GaAs barrier," Physica E, vol. 21, pp. 966-969, March 2004. DOI:10.1016/j.physe.2003.11.172
  422. F. M. Hossain, J. Nishii, S. Takagi, T. Sugihara, A. Ohtomo, T. Fukumura, H. Koinuma, H. Ohno and M. Kawasaki, "Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors," Physica E. vol. 21, pp. 911-915, March 2004. DOI:10.1016/j.physe.2003.11.149


    2003
  423. J. H. Zhao, F. Matsukura, K. Takamura, D. Chiba, Y. Ohno, K. Ohtani, H. Ohno, "Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism," Materials Science in Semiconductor Processing, vol. 6, pp. 507-509, October-December 2003. DOI:10.1016/j.mssp.2003.07.008
  424. H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno and H. Ohno, "Hysteretic dynamic nuclear polarization in GaAs/AlxGa1-xAs(110) quantum wells," Physical Review B, vol. 68, 241303 (4 pages), December 2003. DOI:10.1103/PhysRevB.68.241303
  425. D. Chiba, M. Yamanouchi, F. Matsukura and H. Ohno, "Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor," Science, vol. 301, pp. 943-945, August 2003. DOI:10.1126/science.1086608
  426. Y. Li, P. Xiong, S. von Molnár, Y. Ohno and H. Ohno, "Magnetization reversal of Iron nanoparticles studied by submicron Hall magnetometry," Journal of Applied Physics, vol. 93, pp. 7912-7914, May 2003. DOI:10.1063/1.1557827
  427. D. Chiba, K. Takamura, F. Matsukura and H.Ohno, "Effect of low-temperature annealing on (Ga, Mn)As trilayer structures," Applied Physics Letters, vol. 82, pp. 3020-3022, May 2003. DOI:10.1063/1.1571666
  428. J. Nishii, F.M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H.Ohno and M. Kawasaki, "High mobility thin film transistors with transparent ZnO channels," Japanese Journal of Applied Physics, vol. 42, pp. L347-L349, April 2003. DOI:10.1143/JJAP.42.L347
  429. H. Ohno, "Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors," Journal of Crystal Growth, vol. 251, pp. 285-291, April 2003. DOI:10.1016/S0022-0248(02)02290-X
  430. K. Ohtani, H. Sakuma, H. Ohno, "InAs-based quantum cascade light emitting structures containing a double plasmon waveguide," Journal of Crystal Growth, vol. 251, pp. 718-722, April 2003. DOI:10.1016/S0022-0248(02)02314-X
  431. M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno, "Electrical electron spin injection with a p+-(Ga, Mn)As/n+-GaAs tunnel junction," Journal of Superconductivity, vol. 16, pp. 167-170, February 2003. DOI:10.1023/A:1023282012059
  432. H. Sanada, I. Arata, Y. Ohno, K. Ohtani, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, H. Ohno, "Drift transport of spin-polarized electrons in GaAs," Journal of Superconductivity, vol. 16, pp. 217-219, February 2003. DOI:10.1023/A:1023206817511
  433. D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani, H. Ohno, "Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In, Mn)As and (Al, Ga, Mn)As," Journal of Superconductivity, vol. 16, pp. 179-182, February 2003. DOI:10.1023/A:1023238229806
  434. K. Ohtani and H. Ohno, "InAs/AlSb quantum cascade lasers operating at 10 ﾂｵm;, Applied Physics Letters, vol. 82, pp. 1003-1005, February 2003. DOI:10.1063/1.1545151
  435. F. Matsukura, D. Chiba, Y. Ohno, T. Dietl, H. Ohno, "Spin degree of freedom in ferromagnetic semiconductor heterostructures," Physica E, vol. 16, pp. 104-110, January 2003. DOI:10.1016/S1386-9477(02)00596-9
  436. K. Ohtani, N. Matsumoto, H. Sakuma and H. Ohno, "Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures," Applied Physics Letters, vol. 82, pp. 37-39, January 2003. DOI:10.1063/1.1534939

    2002
  437. K. Ohtani and H. Ohno, "An InAs-based intersubband quantum cascade laser," Japanese Journal of Applied Physics, vol. 41, pp. L1279-L1280, November 2002. DOI:10.1143/JJAP.41.L1279
  438. T. Tsuruoka, N. Tachikawa, S. Ushioda , F. Matsukura, K. Takamura, and H. Ohno, "Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy," Applied Physics Letters, vol. 81, pp. 2800-2802, October 2002. DOI:10.1063/1.1512953
  439. H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, and H. Ohno, "Relaxation of photoinjected spins during drift transport in GaAs," Applied Physics Letters, vol. 81, pp. 2788-2790, October 2002. DOI:10.1063/1.1512818
  440. F. Matsukura, H. Ohno. and T. Dietl, "III-V ferromagnetic semiconductors," Handbook of Magnetic Materials, vol. 14, pp. 1-87, October 2002. Handbook of Magnetic Materials (pdf, 1.1Mb)
  441. K. Takamura, F. Matsukura, D. Chiba, and H. Ohno, "Magnetic properties of (Al, Ga, Mn)As," Applied Physics Letters, vol. 81, pp. 2590-2592, September 2002. DOI:10.1063/1.1511540
  442. T. Dietl, F. Matsukura, and H. Ohno, "Ferromagnetism of magnetic semiconductors : Zhang-Rice limit," Physical Review B, 66, 033203 (4 pages), July 2002. DOI:10.1103/PhysRevB.66.033203
  443. H. Ohno, "Ferromagnetic semiconductors for spin electronics," Journal of Magnetism and Magnetic Materials, vol. 242, pp. 105-107, April 2002. DOI:10.1016/S0304-8853(01)01210-0
  444. H. Akinaga and H. Ohno, "Semiconductor Spintronics," IEEE Transactions on Nanotechnology, vol. 1, pp. 19-31, March 2002. DOI:10.1109/TNANO.2002.1005423
  445. Y. Li, P. Xiong, S.von Molánr, S. Wirth, Y. Ohno, and H. Ohno, "Hall magnetometry on a single iron nanoparticle," Applied Physics Letters, vol. 80, pp. 4644-4646, June 2002. DOI:10.1063/1.1487921
  446. J.H. Zhao, F. Matsukura, E. Abe, D. Chiba, Y. Ohno, K. Takamura, and H. Ohno, "Growth and properties of (Ga, Mn)As on Si (100) substrate," Journal of Crystal Growth, vol. 237-239, pp. 1349-1352, April 2002. DOI:10.1016/S0022-0248(01)02181-9
  447. Y. Ohno, I. Arata, F. Matsukura, and H. Ohno, "Valence band barrier at (Ga, Mn)As/GaAs interfaces," Physica E, vol. 13, pp. 521-524, March 2002. DOI:10.1016/S1386-9477(02)00185-6
  448. D. K. Young, E. Johnston-Halperin, D.D. Awschalom, Y. Ohno, and H. Ohno, "Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures," Applied Physics Letters, vol. 80, pp. 1598-1600, March 2002. DOI:10.1063/1.1458535
  449. F. Matsukura, D. Chiba, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, and H. Ohno, "Control of ferromagnetism in field-effect transistor of a magnetic semiconductor," Physica E, vol. 12, pp. 351-355, January 2002. DOI:10.1016/S1386-9477(01)00275-2
  450. H. Ohno, F. Matsukura, and Y. Ohno, "Semiconductor spin electronics (Invited)," JSAP International, No. 5, January 2002.
  451. T. Tsuruoka, R. Tanimoto, N. Tachikawa, S. Ushioda, F. Matsukura, and H. Ohno, "Microscopic identification of dopant atoms in Mn-doped GaAs layers," Solid State Communications, vol. 121, pp. 79-82,  January 2002. DOI:10.1016/S0038-1098(01)00471-9


    2001

  452. M. Kohda, Y.Ohno, K. Takamura, F. Matsukura, and H. Ohno, "A spin Esaki diode," Japanese Journal of Applied Physics, vol. 40, pp. L1274-L1276, December 2001. DOI:10.1143/JJAP.40.L1274
  453. Y. Nagai, T. Kunimoto, K. Nagasaka, H. Nojiri, M. Motokawa, F. Matsukura, T. Dietl, and H. Ohno, "Spin Polarization Dependent Far Infrared Absorption in Ga1-xMnxAs," Japanese Journal of  Applied Physics, vol. 40, pp. 6231-6234, November 2001. DOI:10.1143/JJAP.40.6231
  454. G. Salis, D. D. Awschalom, Y. Ohno, and H. Ohno, "Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells," Physical Review B, vol. 64, 195304 (10 pages), October 2001. DOI:10.1103/PhysRevB.64.195304
  455. J. H. Zhao, F. Matsukura, K. Takamura, E. Abe, D. Chiba, and H. Ohno, "Room-temperature ferromagnetism in zincblende CrSb grown by molecular beam epitaxy," Applied Physics Letters, vol. 79, pp. 2776-2779, October 2001. DOI:10.1063/1.1413732

  456. H. Ohno, F. Matsukura, and Y. Ohno, "Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures (Invited)," Solid State Communications, vol. 119, pp. 281-289, July 2001. DOI:10.1016/S0038-1098(01)00175-2
  457. H. Ohno, F. Matsukura, and Y. Ohno, "Spin-Dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures(Invited)," Materials Science and Engineering B, vol. 84, pp. 70-74, July 2001. DOI:10.1016/S0921-5107(01)00572-4
  458. K. Ohtani, H. Sakuma, and H. Ohno, "Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures," Applied Physics Letters, vol. 78, pp. 4148-4150, June 2001. DOI:10.1063/1.1381034
  459. K. Takamura, F. Matsukura, Y. Ohno, and H. Ohno, "Growth and properties of (Ga,Mn)As films with high Mn concentration," Journal of Applied Physics, vol. 89, pp. 7024-7026, June 2001. DOI:10.1063/1.1357841
  460. Steven K. H. Sim, H. C. Liu, A. Shen, M. Gao, Kevin F. Lee, M. Buchanan, Y. Ohno, H. Ohno, and E. H. Li, "Effect of barrier width on the performance of quantum well infrared photodetector," Infrared Physics & Technology, vol. 42, pp. 115-121, June 2001. DOI:10.1016/S1350-4495(01)00067-6
  461. H. C. Liu, C. Y. Song, A. Shen, M. Gao, E. Dupont, P. J. Poole, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, Y. Ohno, and H. Ohno, "Dual-band photodetectors based on interband and intersubband transitions," Infrared Physics & Technology, vol. 42, pp. 163-170, June 2001. DOI:10.1016/S1350-4495(01)00072-X
  462. T. Adachi, Y. Ohno, F. Matsukura, and H. Ohno, "Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells," Physica E, vol. 10, pp. 36-39, May 2001. DOI:10.1016/S1386-9477(01)00049-2
  463. T. Fukumura, T. Shono, K. Inaba, T. Hasegawa, H. Koinuma, F. Matsukura, and H. Ohno, "Magnetic domain structure of a ferromagnetic semiconductor (Ga, Mn)As observed with scanning probe microscopes," Physica E, vol. 10, pp. 135-138, May 2001. DOI:10.1016/S1386-9477(01)00068-6
  464. T. Omiya, F. Matsukura, A. Shen, Y. Ohno, and H. Ohno, "Magnetotransport properties of (Ga, Mn)As grown on GaAs (411) A substrates," Physica E, vol. 10, pp. 206-209, May 2001. DOI:10.1016/S1386-9477(01)00083-2
  465. S. Ueda, S. Imada, T. Muro, Y. Saitoh, S. Suga, F. Matsukura, and H. Ohno, "Magnetic circular dichroism in Mn 2p core absorption of Ga1-xMnxAs," Physica E, vol. 10, pp. 210-214, May 2001. DOI:10.1016/S1386-9477(01)00084-4
  466. D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno,"Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures," Physica E, vol. 10, pp. 278-282, May 2001. DOI:10.1016/S1386-9477(01)00100-X
  467. I. Arata, Y. Ohno, F. Matsukura, and H. Ohno, "Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions," Physica E, vol. 10, pp.288-291, May 2001. DOI:10.1016/S1386-9477(01)00101-1
  468. Y. Ohno, I. Arata, F. Matsukura, H. Ohno, D. K. Young, B. Beschoten, and D. D. Awschalom, "Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructure," Physica E, vol. 10, pp.489-492, May 2001. DOI:10.1016/S1386-9477(01)00143-6
  469. T. Dietl , H. Ohno, and F. Matsukura , "Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors," Physical Review B, vol. 63, 195205 (21 pages), May 2001. DOI:10.1103/PhysRevB.63.195205
  470. G. Salis, D.T. Fuchs, J. M. Nikkawa, D. D. Awschalom, Y. Ohno, and H. Ohno, "Optical manipulation of nuclear spin by a two-dimensional electron gas," Physical Review Letters, vol. 86, pp. 2677-2680, March 2001. DOI:10.1103/PhysRevLett.86.2677
  471. H. Ohno and F. Matsukura, "A ferromagnetic III-V semiconductor: (Ga, Mn)As," Solid State Communications, vol. 117, pp. 179-186, January 2001. DOI:10.1016/S0038-1098(00)00436-1
  472. H. Ofuchi, T. Kubo, M. Tabuchi, Y. Takeda, F. Matsukura, S. P. Guo, A. Shen, and H. Ohno, "Fluorescence extended x-ray absorption fine structure study on local structures around Mn-atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots," Journal of Applied Physics, vol. 89, pp. 66-70, January 2001.  DOI:10.1063/1.1330761
  473. T. Dietl and H. Ohno, "Ferromagnetism in III-V and II- VI semiconductor structures," Physica E, vol. 9, pp. 185-193, January 2001. DOI:10.1016/S1386-9477(00)00193-4


    2000

  474. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, "Electric-field control of ferromagnetism," Nature, vol. 408, pp. 944-946, December 2000. DOI:10.1038/35050040

  475. J. Yang, H. Yasuda, S. Wang, F. Matsukura, Y. Ohno, and H. Ohno,"Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy," Applied Surface Science, vol. 166, pp. 242-246, October 2000. DOI:10.1016/S0169-4332(00)00429-3

  476. H. Yasuda, F. Matsukura, Y. Ohno, and H. Ohno, "Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface," Applied Surface Science, vol. 166, pp. 413-417, October 2000. DOI:10.1016/S0169-4332(00)00458-X

  477. D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno, "Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures," Applied Physics Letters, vol. 77, pp. 1873-1875, September 2000. DOI:10.1063/1.1310626

  478. T. Shono, T. Hasegawa, T. Fukumura, F. Matsukura, and H. Ohno, "Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope," Applied Physics Letters,  vol. 77, pp. 1363-1365, August 2000. DOI:10.1063/1.1290273

  479. H. Ohno, "Ferromagnetic III-V heterostructures," Journal of Vacuum Science & Technology B, vol. 18, pp. 2039-2043, July/August 2000. DOI:10.1116/1.1305944

  480. T. Shono, T. Fukumura, M. Kawasaki, H. Koinuma, T. Hasegawa, T. Endo, K. Kitazawa, F. Matsukura, and H. Ohno, "Magnetic domain structures of (Ga,Mn)As investigated by scaning Hall probe microscopy," Physica B, vol. 284, pp. 1171-1172, July 2000. DOI:10.1016/S0921-4526(99)02585-5

  481. Y. Ohno, I. Arata, F. Matsukura, K. Ohtani, S. Wang and H. Ohno, "MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor; pn junctions based on (Ga,Mn)As," Applied Surface Science, vol. 159-160, pp. 308-312, June 2000. DOI:10.1016/S0169-4332(00)00107-0

  482. F. Matsukura, E. Abe, Y. Ohno, and H. Ohno, "Molecular beam epitaxy of GaSb with high concentration of Mn," Applied Surface Science, vol. 159-160, pp. 265-269, June 2000. DOI:10.1016/S0169-4332(00)00108-2

  483. K. Ohtani, A. Sato, Y. Ohno, F. Matsukura, and H. Ohno, "Influence of interface bond and buffer material on the optical properties of InAs/AlSb quantum wells grown on GaAs substrates," Applied Surface Science, vol. 159-160, pp. 313-317, June 2000. DOI:10.1016/S0169-4332(00)00106-9

  484. H. Ohldag, V. Solinus, F. U. Hillebrecht, J. B. Goedkoop, M. Finazzi, F. Matsukura, and H. Ohno, "Magnetic moment of Mn in the ferromagnetic semiconductor Ga0.98Mn0.02As," Applied Physics Letters, vol. 76, pp. 2928-2930, May 2000. DOI:10.1063/1.126519

  485. T. Adachi, Y. Ohno, R. Terauchi, F. Matsukura, and H. Ohno, "Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells," Physica E, vol. 7, pp. 1015-1019, May 2000. DOI:10.1016/S1386-9477(00)00107-7

  486. T. Omiya, F. Matsukura, T. Dietl, Y. Ohno, T. Sakon, M. Motokawa, and H. Ohno, "Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field," Physica E, vol. 7, pp. 976-980, May 2000. DOI:10.1016/S1386-9477(00)00099-0

  487. E. Abe, F. Matsukura, H. Yasuda, Y. Ohno, and H. Ohno, "Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb," Physica E, vol. 7, pp. 981-985, May 2000.  DOI:10.1016/S1386-9477(00)00100-4

  488. T. Dietl, J. Chbert, P. Kossacki, D. Ferrand, S. Tatarenko, A. Waisiela, Y. Merle D'aubigne, F. Matsukura, N. Akiba, and H. Ohno, "Ferromagnetizm induced by free carriers in p-type structures of diluted magnetic semiconductors," Physica E, vol. 7, pp. 967-975, May 2000. DOI:10.1016/S1386-9477(00)00098-9

  489. T. Wang, J. Bai, S. Sakai, Y. Ohno, and H. Ohno "Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time," Applied Physics Letters, vol. 76, pp. 2737-2739, May 2000. DOI:10.1063/1.126460

  490. F. Matsukura, E. Abe, and H. Ohno, "Magnetotransport properties of (Ga, Mn)Sb," Journal of Applied Physics, vol. 87, pp. 6442-6444, May 2000. DOI:10.1063/1.372732

  491. N. Akiba, D. Chiba, K. Nakata, F. Matsukura, Y. Ohno, and H. Ohno, "Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures," Journal of Applied Physics, vol. 87, pp. 6436-6438, May 2000. DOI:10.1063/1.372730

  492. K. Ohtani and H. Ohno, "Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structure," Physica E, vol. 7, pp. 80-83, April 2000. DOI:10.1016/S1386-9477(99)00282-9
  493. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, "Zener model description of ferromagnetism in zinc-blende magnetic semiconductors," Science, vol. 287, pp. 1019-1022, February 2000. DOI:10.1126/science.287.5455.1019

  494. H. Ohno, "Ferromagnetism and heterostructures of III-V magnetic semiconductors," Physica E, vol. 6, pp. 702-708, February 2000. DOI:10.1016/S1386-9477(99)00177-0

  495. Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, "Electron spin relaxation beyond D'yakonov-Perel' interaction in GaAs/AlGaAs quantum wells," Physica E, vol 6, pp. 817-820, February 2000. DOI:10.1016/S1386-9477(99)00251-9

  496. S. P. Guo, A. Shen, H. Yasuda, Y. Ohno, F. Matsukura, and H. Ohno, "Surfactant effect of Mn on the formation of self-organized InAs nanostructures," Journal of Crystal Growth, vol. 208, pp. 799-803, January 2000. DOI:10.1016/S0022-0248(99)00465-0

  497. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, N. Kumada, Y. Ohno, S. Kishimoto, F. Matsukura, and S. Nagahama, "Bilayer v=2 quantum Hall state in parallel high magnetic field," Physica E, vol. 6, pp. 615-618, February 2000. DOI:10.1016/S1386-9477(99)00129-0



    1999

  498. J. G. E. Harris, D. D. Awshalom,, F. Matsukura, H. Ohno, K. D. Maranowski, and A. C. Gossard, "Integrated micromechanical cantilever megnetometry of Ga1-xMnxAs," Applied Physics Letters,  vol. 75, pp. 1140-1142, August 1999. DOI:10.1063/1.124622

  499. B. Beschoten, P. A. Cowell, I. Malajovich, D. D. Awschalom, F. Matsukura, A. Shen, and H. Ohno, "Magnetic circular dichroism studies of carrier-induced ferromagnetism in Ga1-xMnxAs," Physical Review Letters, vol. 83, pp. 3073-3076, October 1999. DOI:10.1103/PhysRevLett.83.3073

  500. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, "Electrical spin injection in a ferromagentic semiconductor heterostructures," Nature, vol. 402, pp. 790-792, December 1999. DOI:10.1038/45509

  501. Y. Ohno, R. Terachi, T. Adachi, F. Matsukura, and H. Ohno, "Spin relaxation in GaAs (110) quantum wells," Physical Review Letters, vol. 83, pp. 4196-4199, November 1999.DOI:10.1103/PhysRevLett.83.4196

  502. H. Ohno, "Properties of ferromagnetic III-V semiconductors," Journal of Magnetism and Magnetic Materials, vol. 200, pp. 110-129, October 1999. DOI:10.1016/S0304-8853(99)00444-8

  503. Y. Iye, A. Oiwa , A. Endo, S. Katsumoto, F. Matsukura, A. Shen, H. Ohno, and H. Munekata, "Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors," Materials Science and Engineering B, vol. 63, pp. 88-95, August 1999. DOI:10.1016/S0921-5107(99)00057-4

  504. H. Ohno, "Ferromagnetic III-V semiconductors and their heterostrucures," Proceedings of the 24th International Conference on the Physics of Semiconductors (Jerusalem, Israel, 2 窶・7 August 1998, Ed. by D. Gershoni, World Scientific, Singapore), pp. 139-146.

  505. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, A. Urayama, Y. Ohno, S. Kishimoto, F. Matsukura, and N. Kumada, "Interlayer coherence in v = 1 and v = 2 bilayer quantum Hall states," Physical Review B, vol. 59, pp. 14888-14891, June 1999. DOI:10.1103/PhysRevB.59.14888

  506. K. Ohtani and H. Ohno, "Intersubband electroluminescence in InAs/GaSb/AlSb type II cascade structures," Applied Physics Letters, vol. 74, pp. 1409-1411, March 1999. DOI:10.1063/1.123566

  507. T. Wang , Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai, and H. Ohno, "Electron mobility exceeding 104 cm2/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate," Applied Physics Letters, vol. 74, pp. 3531-3533, June 1999. DOI:10.1063/1.124151

  508. H. Yasuda and H. Ohno, "Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth," Applied Physics Letters,  vol. 74, pp. 3275-3277, May 1999. DOI:10.1063/1.123318

  509. K. Ohtani and H. Ohno, "Mid-infrared intersubband electroluminescence in InAs/AlSb cascade structures," Electronics Letters, vol. 35, pp. 935-936, May 1999. DOI:10.1049/el:19990624

  510. J. Szczytko, W. Mac, A. Twardowski, F. Matsukura, and H. Ohno, "Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers," Physical Review B, vol. 59, pp. 12935-12939, May 1999. DOI:10.1103/PhysRevB.59.12935
  511. A. Shen, F. Matsukura, S.P. Guo, Y. Sugawara, H. Ohno, M. Tani, H. Abe, and H. C. Liu, "Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As," Journal of Crystal Growth, vol. 201-202, pp. 679-683, May 1999. DOI:10.1016/S0022-0248(98)01447-X

  512. S. P. Guo, A. Shen, F. Matsukura, Y. Ohno, and H. Ohno, "InAs and (In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrates," Journal of Crystal Growth, vol. 201-202, pp. 684-688, May 1999. DOI:10.1016/S0022-0248(98)01442-0

  513. A. Sato, K. Ohtani, R. Terauchi, Y. Ohno, F. Matsukura, and H. Ohno, "X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy," Journal of Crystal Growth, vol. 201-202, pp. 861-863, May 1999. DOI:10.1016/S0022-0248(98)01475-4

  514. H. Ohno, F. Matsukura, T. Omiya, and N. Akiba, "Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As," Journal of Applied Physics,  vol. 85, pp. 4277-4282, April 1999. DOI:10.1063/1.370343

  515. R. Terauchi, Y. Ohno, T. Atachi, A. Sato, F. Matsukura, A. Tackeuchi, and H. Ohno, "Carrier mobility dependence of electron spin relaxation in GaAs quantum wells," Japanese Journal of Applied Physics, vol. 38, pp. 2549-2551, April 1999. DOI:10.1143/JJAP.38.2549

  516. A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno, and H. Munekata, "Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb," Physical Review B, vol. 59, pp. 5826-5831, February 1999. DOI:10.1103/PhysRevB.59.5826
  517. H. Ohno, "III-V based ferromagnetic semiconductors," Journal of Magnetics Society of Japan, vol. 23, pp. 88-92, 1999. DOI:10.3379/jmsjmag.23.88

  518. F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye and H. Ohno, "Magnetotransport properties of (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures," Journal of Magnetics Society of Japan, vol. 23, pp. 99-101, 1999. DOI:10.3379/jmsjmag.23.99



    1998

  519. S. Kishimoto, Y. Ohno, F. Matsukura, and H. Ohno, "Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime," Physica B, vol. 256-258, pp. 535-539, December 1998. DOI:10.1016/S0921-4526(98)00674-7

  520. N. Akiba, F. Matsukura, Y. Ohno, A. Shen, K. Ohtani, T. Sakon, M. Motokawa, and H. Ohno, "Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga, Mn)As," Physica B, vol. 256-258, pp. 561-564, December 1998. DOI:10.1016/S0921-4526(98)00490-6

  521. Y. H. Matsuda, H. Arimoto, N. Miura, A. Twardowski, H. Ohno, A. Shen, and F. Matsukura, "Cyclotron resonance in Cd1-xFexS and Ga1-xMnxAs at megagauss magnetic fields," Physica B, vol. 256-258, pp. 565-568, December 1998. DOI:10.1016/S0921-4526(98)00673-5

  522. H. Nojiri, M. Motokawa, S. Takeyama, F. Matsukura, and H. Ohno, "ESR study of Mn doped II-VI and III-V DMS," Physica B, vol. 256-258, pp. 569-572, December 1998. DOI:10.1016/S0921-4526(98)00504-3

  523. F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, and H. Ohno, "Magnetotransport properties of all semiconductor (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As tri-layer structures," Physica B, vol. 256-258, pp. 573-576, December 1998. DOI:10.1016/S0921-4526(98)00495-5

  524. F. Matsukura, A. Shen, Y. Sugawara, T. Omiya, Y. Ohno, and H. Ohno, "Properties of (Ga,Mn)As and their dependence on molecular beam growth conditions," Proceedings of the 25th International Symposium on Compound Semiconductors held in Nara (Nara, Japan, October 12-16, 1998, Eds. H Sakaki, J.C. Woo, N. Yokoyama, Y Harayama, CRC Press), pp. 547-552.

  525. N. Akiba, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, A. Oiwa, S. Katsumoto, and Y. Iye "Interlayer exchange in (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures," Applied Physics Letters, vol. 73, pp. 2122-2124, October 1998. DOI:10.1063/1.122398

  526. T. Tsuruoka, Y. Oshizumi, S. Ushioda, Y. Ohno, and H. Ohno, "Light emision spectra of AsGaAs/GaAs multiquantum wells induced by scanning tunneling microscope," Applied Physics Letters, vol. 73, pp. 1544-1546, September 1998. DOI:10.1063/1.122200

  527. H. Ohno, "Making nonmagnetic semiconductor magnetic," Science, vol. 281, pp. 951-956, August 1998. DOI:10.1126/science.281.5379.951

  528. H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, "Spontaneous splitting of ferromagnetic (Ga, Mn)As observed by resonant tunneling spectroscopy," Applied Physics Letters, vol. 73, pp. 363-365, July 1998. DOI:10.1063/1.121835

  529. K. Ohtani, Y. Ohno, F. Matsukura, and H. Ohno, "Well width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers," Physica E, vol. 2, pp. 200-203, July 1998. DOI:10.1016/S1386-9477(98)00043-5

  530. S. P. Guo, H. Ohno, A. Shen, and Y. Ohno, "InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates," Physica E, vol. 2, pp. 672-677, July 1998. DOI:10.1016/S1386-9477(98)00137-4

  531. H. Ohno, F. Matsukura, A. Shen, Y. Sugawara, N. Akiba, and T. Kuroiwa, "Ferromagnetic (Ga, Mn)As and its heterostructures," Physica E, vol. 2, pp. 904-908, July 1998. DOI:10.1016/S1386-9477(98)00184-2

  532. Y. Ohno, A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura, M. Yasumoto and A. Urayama, "v=1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well," Solid-State Electronics, vol. 42, pp. 1183-1185, July 1998. DOI:10.1016/S0038-1101(97)00326-2

  533. S. Kishimoto, Y. Ohno, F. Matsukura, H. Sakaki, and H. Ohno, "Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems," Solid-State Electronics, vol. 42, pp. 1187-1190, July 1998. DOI:10.1016/S0038-1101(98)00001-X

  534. A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, F. Matsukura, A. Shen, Y. Sugawara, and H. Ohno, "Low-temperature conduction and giant negative magnetoresistance in III-V based diluted magnetic semicondcutor: (Ga,Mn)As/GaAs," Physica B, vol. 249-251, pp. 775-779, June 1998. DOI:10.1016/S0921-4526(98)00312-3

  535. A. Shen, H. Ohno, F. Matsukura, H. C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, and Y. Ohno, "Superlattice and multilayer structures bsed on ferromagnetic semiconductor (Ga, Mn)As," Physica B, vol. 249-251, pp. 809-813, June 1998. DOI:10.1016/S0921-4526(98)00319-6

  536. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura, Y. Ohno, M. Yasumoto, and A. Urayama, "Interlayer quantum coherence and anomalous stability of v=1 bilayer quantum Hall state," Physica B, vol. 249-251, pp. 836-840, June 1998. DOI:10.1016/S0921-4526(98)00326-3

  537. A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, and F. Matsukura, "Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study," Applied Surface Science, vol. 130-132, pp. 382-386, June 1998. DOI:10.1016/S0169-4332(98)00087-7

  538. S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "Self-organized (In,Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates," Applied Surface Science, vol. 130-132, pp. 797-802, June 1998. DOI:10.1016/S0169-4332(98)00157-3

  539. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, Y. Ohno, S. Kishimoto, F. Matsukura, M. Yasumoto, and A. Urayama, "Phase transition in the v=2 bilayer quantum Hall state," Physical Review Letters, vol. 80, pp. 4534-4537, May 1998. DOI:10.1103/PhysRevLett.80.4534

  540. S. Guo, H. Ohno, A. Shen, Y. Ohno, and F. Matsukura, "Photoluminescence study of InAs quantum dots and quantum dashes on GaAs (211)B," Japanese Journal of Applied Physics, vol. 37, pp. 1527-1531, March 1998. DOI:10.1143/JJAP.37.1527

  541. T. Kuroiwa, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, T. Yasuda, and Y. Segawa, "Faraday rotation of ferromagnetic (Ga,Mn)As," Electronics Letters, vol. 34, pp. 190-192, January 1998. DOI:10.1049/el:19980128

  542. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport properties and origin of ferromagnetism in (Ga,Mn)As," Physical Review B, vol. 57, pp. R2037-R2040, January 1998. DOI:10.1103/PhysRevB.57.R2037

  543. A. Oiwa, S. Katsumoto, Y. Iye, H. Ohno, F. Matsukura, A. Shen, and Y. Sugawara, "Giant negative magnetoresistance of (Ga,Mn)As/GaAs in the vicinity of a metal-insulator transition," Physica. Status Solidi (b), vol. 205, pp 115-118, January 1998. DOI:10.1002/(SICI)1521-3951(199801)205:1<115::AID-PSSB115>3.0.CO;2-F

  544. S. Katsumoto, A. Oiwa, A. Endo, M. Hirasawa, Y. Iye, H. Ohno, F. Matsukura, A. Shen, and Y. Sugawara, "Strongly anisotropic hopping conduction in (Ga,Mn)As/GaAs," Physica Status Solidi (b), vol. 205, pp. 167-171, January 1998. DOI:10.1002/(SICI)1521-3951(199801)205:1<167::AID-PSSB167>3.0.CO;2-O

  545. H. Ohno, "Magnetotransport and magnetic properties of (Ga,Mn)As and its heterostructures," Acta Physica Polonica A, vol. 94, pp. 155-164, 1998. DOI:10.12693/APhysPolA.94.155



    1997

  546. A. Shen, Y. Horikoshi, H. Ohno, and S. P. Guo, "Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure," Applied Physics Letters, vol. 71, pp. 1540-1542, September 1997. DOI:10.1063/1.119973

  547. H. Ohno, "Preparation and properties of III-V based new diluted magnetic semiconductors," Advances in Colloid and Interface Science, vol. 71/72, pp. 61-75, September 1997. DOI:10.1016/S0001-8686(97)90010-5

  548. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Hirokoshi, O. Sugie, S. Kishimoto, F. Matsukura, Y. Ohno, and M. Yasumoto, "Anomalous stability of v=1 bilayer quantum Hall state," Solid State Communications, vol. 103, pp. 447-451, August 1997. DOI:10.1016/S0038-1098(97)00221-4

  549. A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, H. Ohno, Y. Sugawara, A. Shen, F. Matsukura, and Y. Iye, "Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga,Mn)As/GaAs," Solid State Communications, vol. 103, pp. 209-213, July 1997. DOI:10.1016/S0038-1098(97)00178-6

  550. S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "InAs self-organized quantum dashes grown on GaAs(211)B," Applied Physics Letters, vol. 70, pp. 2738-2740, May 1997. DOI:10.1063/1.119007

  551. A. Shen, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, and T. Kuroiwa, "Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs," Journal of Crystal Growth, vol. 175-176, pp. 1069-1074, May 1997.  DOI:10.1016/S0022-0248(96)00967-0

  552. H. Ohno, A. Mathur, Y. Ohno, F. Matsukura, K. Ohtani, N. Akiba, T. Kuroiwa, and H. Nakajima, "Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells," Applied Surface Science, vol. 113-114, pp. 90-96, April 1997. DOI:10.1016/S0169-4332(96)00879-3

  553. F. Matsukura, A. Oiwa, A. Shen, Y. Sugawara, N. Akiba, T. Kuroiwa, H. Ohno, A. Endo, S. Katsumoto, and Y. Iye, "Growth and properties of (Ga, Mn)As: a new III-V diluted magnetic semiconductor," Applied Surface Science, vol. 113/114, pp. 178-182, April 1997. DOI:10.1016/S0169-4332(96)00790-8

  554. A. Shen, F. Matsukura, Y. Sugawara, T. Kuroiwa, H. Ohno, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures," Applied Surface Science, vol. 113/114, pp. 183-188, April 1997. DOI:10.1016/S0169-4332(96)00865-3

  555. A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, Y. Ohno, N. Akiba, and T. Kuroiwa, "(Ga, Mn)As/GaAs diluted megnetic semiconductor superlattice structures prepared by molecular beam epitaxy," Japanese Journal of Applied Physics,  vol. 36, pp. L73-L75, February 1997. DOI:10.1143/JJAP.36.L73

  556. A. Oiwa, Y. Iye, S. Katsumoto, A. Endo, M. Hirasawa, H. Ohno, F. Matsukura, A. Shen, and H. Munekata, "Electrical and magnetic properties of (In,Mn)As/(Al,Ga)Sb heterostructures and bulk (Ga,Mn)As," Proceedings of the 12th International Conference on High Magnetic Fields in the Physics of Semiconductors II (eds. G. Landwehr and W. Ossau, World Scientific, Singapore, 1997), pp. 885-888.



    1996

  557. H. Ohno, F. Matsukura, A. Shen, Y. Sugawara, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, "Ferromagnetic order in (Ga, Mn)As/GaAs heterostructures," Proceedings of the 23rd International Conference on the Physics of Semiconductors (Berlin, Germany, July 21-26, 1996, Eds. M. Scheffler and R. Zimmermann, World Scientific, Singapore, 1996), pp. 405-408.

  558. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, "(Ga, Mn)As: A new diluted magnetic semiconductor based on GaAs," Applied Physics Letters, vol. 69, pp. 363-365, July 1996. DOI:10.1063/1.118061



    1995

  559. H. Ohno, "Mn-based III-V diluted magnetic (semimagnetic) semiconductors," Materials Science Forum, vol. 182-184, pp. 443-450, February 1995. DOI:10.4028/www.scientific.net/MSF.182-184.443

  560. H. Ohno, F. Matsukura, H. Munekata, Y. Iye, and J. Nakahara, "Temperature dependence of anomalous Hall effect and magnetism of (In, Mn)As/(Al ,Ga)Sb heterostructures," Proceedings of the 22nd International Conference on the Physics of Semiconductors (Vancouver, Canada, August 15-19, 1994, Ed. D. J. Lockwood, World Scientific, Singapore, 1995), pp. 2605-2608.



    Related Papers

  1. S. Goto, Y. Nomura, Y. Morishita, Y. Katayama, and H. Ohno, "Growth of GaAs by molecular-beam epitaxy using trisdimethylaminoarsine," Journal of Crystal Growth, vol. 149, pp. 143-146, April 1995. DOI:10.1016/0022-0248(95)00031-3

  2. H. Ohno, "Minimum light power for optical interconnection in integrated circuits," Optoelectronics -Devices and Technologies-, vol. 9(1), pp. 131-136, 1994.

  3. H. Ohno, "Inter-subband population inversion in tunneling heterostructures," Transactions of the Materials Research Society of Japan, vol. 19A, pp. 47-52, 1994.

  4. H. Ohno, L. Esaki, and E. E. Mendez, "Optoelectronic devices based on type II polytype tunnel heterostructures," Applied Physics Letters, vol. 60, pp. 3153-3155, June 1992. DOI:10.1063/1.106726

  5. H. Ohno, H. Munekata, T. Penney, S. von Molnár, and L. L.  Chang, "Partial ferromagnetic order in p-type (In,Mn)As diluted magnetic III-V semiconductors," Materials Science Forum, vol. 117&118, pp. 297-302, January 1993. DOI:10.4028/www.scientific.net/MSF.117-118.297

  6. H. Ohno, "Diluted magnetic III-V semiconductor and its transport properties," Japanese Journal of Applied Physics, vol. 32, pp. 459-461, 1993.

  7. H. Ohno, E. E. Mendez, A. Alexandrou, and J. M. Hong, "Tamm states in superlattices," Surface Science, vol. 267, pp. 161-165, October 1992. DOI:10.1016/0039-6028(92)91112-O

  8. H. Ohno, H. Munekata, T. Penney, S. von Molnár, and L. L. Chang, "Magnetotransport properties of p-type (In, Mn)As diluted magnetic III-V semiconductors," Physical Review Letters, vol. 68, pp. 2664-2667, April 1992. DOI:10.1103/PhysRevLett.68.2664

  9. S. von Molnár, H. Munekata, H. Ohno, and L. L. Chang, "New diluted magnetic semiconductors based on III-V Compounds," Journal of Magnetism and Magnetic Materials, vol. 93, pp. 356-364, February 1991. DOI:10.1016/0304-8853(91)90361-D

  10. H. Munekata, H. Ohno, R .R. Ruf, R. J. Gambino, and L. L. Chang, "P-type diluted magnetic III-V semiconductors," Journal of Crystal Growth, vol. 111, pp. 1011-1015, May 1991. DOI:10.1016/0022-0248(91)91123-R

  11. E. E. Mendez, H. Ohno, L. Esaki, and W. I. Wang, "Resonant interband tunneling via Landau levels in polytype heterostructures," Physical Review B, vol. 43, pp. 5196-5199, February 1991. DOI:10.1103/PhysRevB.43.5196

  12. H. Ohno, H. Munekata, S. von Molnár, and L. L. Chang, "New III-V diluted magnetic semiconductors," Journal of Applied Physica, vol. 69, pp. 6103-6108, April 1991. DOI:10.1063/1.347780

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