▼Recent Publications :      last updated:  

2023/2022/2021/2020
/2019/2018/2017/2016/2015/
/2014/2013/2012/2011/2010/
/2009/2008/2007/2006/2005/
/2004/2003/2002/2001/2000/
/1999/1998/1997/1996/1995/
Related Papers




    2023
  1. J.-Y. Yoon, P. Zhang, C.-T. Chou, Y. Takeuchi, T. Uchimura, J. T. Hou, J. Han, S. Kanai, H. Ohno, S. Fukami, and L. Liu, "Handedness anomaly in a non-collinear antiferromagnet under spin-orbit torque," Nature Materials, vol. 22, pp. 1106-1113, January 2023. DOI:10.1038/s41563-023-01620-2
  2. A-S. Koshikawa, J. Llandro, M. Ohzeki, S. Fukami, H. Ohno, and N. Leo, "Magnetic order in nanoscale gyroid networks," Physical Review B vol. 108, 024414 (10 pages), June 2023. DOI:10.1103/PhysRevB.108.024414
  3. H. Masuda, Y. Yamane, T. Seki, K. Raab, T. Dohi, R. Modak, K. Uchida, J. Ieda, M. Klaui, and K. Takanashi, "Magnetization switching process by dual spin-orbit torque in interlayer exchange-coupled systems," Applied Physics Letters vol. 122, 162402(7 pages), April 2023. DOI:10.1063/5.0140328
  4. Y. Sato, Y. Takeuchi, Y. Yamane, J. -Y. Yoon, S. Kanai, J. Ieda, H. Ohno and S. Fukami,"Thermal stability of non-collinear antiferromagnetic Mn3Sn nanodot," Applied Physics Letters vol. 122, 122404(6 pages), March 2023. DOI:10.1063/5.0135709
  5. J. Han, R. Cheng, L. Liu, H. Ohno and S. Fukami, "Coherent antiferromagnetic spintronics," Nature Materials vol. 22 , pp. 684-695 , March 2023. DOI:10.1038/s41563-023-01492-6
  6. S. Chowdhury, A. Grimaldi, N. A. Aadit, S. Niazi, M. Mohseni, S. Kanai, H. Ohno, S. Fukami, L. Theogarajan, G. Finocchio, S. Datta, and K. Y. Camsari, "A full-stack view of probabilistic computing with p-bits: devices, architectures and algorithms," IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 9, (11 pages), March 2023. DOI:10.1109/JXCDC.2023.3256981
  7. M. Shinozaki, J. Igarashi, S. Iwakiri, T. Kitada, K. Hayakawa, B. Jinnai, T. Otsuka, S. Fukami, K. Kobayashi, and H. Ohno,"Nonlinear conductance in nanoscale CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis," Physical Review B vol. 107, 094436(8 pages), February 2023. DOI:10.1103/PhysRevB.107.094436
    8. 2022
  8. K. Kobayashi, K. Hayakawa, J. Igarashi, W. A. Borders, S. Kanai, H. Ohno and S. Fukami, "External-Field-Robust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling," Physical Review Applied vol. 18, 054085(9 pages), November 2022. DOI:10.1103/PhysRevApplied.18.024075
  9. J. Gibbons, T. Dohi, V. P. Amin, F. Xue, H. Ren, J.-W. Xu, H. Arava, S. Shim, H. Saglam, Y. Liu, J. E. Pearson, N. Mason, A. K. Petford-Long, P. M. Haney, M. D. Stiles, E. E. Fullerton, A. D. Kent, S. Fukami, and A. Hoffmann, "Large Exotic Spin Torques in Antiferromagnetic Iron Rhodium," Physical Review Applied vol. 18, 024075(12 pages), August 2022. DOI:10.1103/PhysRevApplied.18.054085
  10. R. R. Chowdhury, S. DuttaGupta, C. Patra, A. Kataria, S. Fukami, and R. P. Singh, "Anisotropic magnetotransport in the layered antiferromagnet TaFe1.25Te3," Physical Review Materials vol. 6, 084408(8 pages) August 2022. DOI:10.1103/PhysRevMaterials.6.084408
  11. T. Funatsu, S. Kanai, J. Ieda, S. Fukami, and H. Ohno, "Local bifurcation with spin-transfer torque in superparamagnetic tunnel junctions," Nature Communications vol. 13, 4079(8 pages) July 2022. DOI:10.1038/s41467-022-31788-1
  12. H. Masuda, T. Seki, Y. Yamane, R. Modak, K. Uchida, J. Ieda, Y.-C. Lau, S. Fukami, and K. Takanashi, "Large Antisymmetric Interlayer Exchange Coupling Enabling Perpendicular Magnetization Switching by an In-Plane Magnetic Field," Physical Review Applied vol. 17, 054036(9 pages), May 2022. DOI:10.1103/PhysRevApplied.17.054036
  13. T. Uchimura, J. Yoon, Y. Sato, Y. Takeuchi, S. Kanai, R. Takechi, K. Kishi, Y. Yamane, S. DuttaGupta, J. Ieda, H. Ohno, and S. Fukami, "Observation of domain structure in non-collinear antiferromagnetic Mn3Sn thin films by magneto-optical Kerr effect," Applied Physics Letters vol. 120, 172405 (5 pages), April 2022. DOI: 10.1063/5.0089355
  14. Y. Yamane, S. Fukami, and J. Ieda, "Theory of Emergent Inductance with Spin-Orbit Coupling Effects," Physical Review Letters vol. 128, 147201(6 pages), April 2022. DOI:10.1103/PhysRevLett.128.147201
  15. S. Kanai, F. J. Heremans, H. Seo, G. Wolfowicz, C. P. Anderson, S. E. Sullivan, M. Onizhuk, G. Galli, D. D. Awschalom, and H. Ohno, "Generalized scaling of spin qubit coherence in over 12,000 host materials," Proceedings of National Academy of Science of the United States of America vol. 119, e2121808119 (8 pages) April 2022. DOI:10.1073/pnas.2121808119
  16. D. Kumar, T. Jin, R. Sbiaa, M. Klaui, S. Bedanta, S. Fukami, D. Ravelosona, S. Yang, X. Liu, and S.N. Piramanayagam, "Domain wall memory: Physics, materials, and devices," Physics Reports vol. 958, pp. 1-35, March 2022. DOI:10.1016/j.physrep.2022.02.001
  17. Y. Takeuchi, R. Okuda, J. Igarashi, B. Jinnai, T. Saino, S. Ikeda, S. Fukami and H. Ohno, "Nanometer-thin L10-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties," Applied Physics Letters vol. 120, 052404 (5 pages), February 2022. DOI:10.1063/5.0077874
  18. J. Kaiser, W. A. Borders, K. Y. Camsari, S. Fukami, H. Ohno, and S.Datta, "Hardware-Aware In Situ Learning Based on Stochastic Magnetic Tunnel Junctions," Physical Review Applied vol. 17, 014016 (12 pages), January 2022. DOI:10.1103/PhysRevApplied.17.014016
  19. R. R. Chowdhury, C. Patra, S. DuttaGupta, S. Satheesh, S. Dan, S. Fukami, and R. P. Singh, "Modification of unconventional Hall effect with doping at the nonmagnetic site in a two-dimensional van der Waals ferromagnet," Physical Review Materials vol. 6, 014002 (9 pages), January 2022. DOI:10.1103/PhysRevMaterials.6.014002
    20. 2021
  20. Y. Takeuchi, E. C. I. Enobio, B. Jinnai, H. Sato, S. Fukami, and H.Ohno, "Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions," Applied Physics Letters vol. 119, 242403 (5 pages), December 2021. DOI:10.1063/5.0072957
  21. M. Zahedinejad, H. Fulara, R. Khymyn, A. Houshang, M. Dvornik, S. Fukami, S. Kanai, H. Ohno, and J. Akerman, "Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing," Nature Materials, vol. 21, pp. 81-87, November 2021. DOI:10.1038/s41563-021-01153-6
  22. K. Kobayashi, W. A. Borders, S. Kanai, K. Hayakawa, H. Ohno, and S. Fukami, "Sigmoidal curves of stochastic magnetic tunnel junctions with perpendicular easy axis," Applied Physics Letters vol. 119, 132406 (5 pages), September 2021. DOI:10.1063/5.0065919
  23. R. Roy Chowdhury, S. DuttaGupta, C. Patra, O. A. Tretiakov, S. Sharma, S. Fukami, H. Ohno, and R. P. Singh, "Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2," Scientific Reports vol. 11, 14121 (10 pages), July 2021. DOI:10.1038/s41598-021-93402-6
  24. S. Iihama, Q. Remy, J. Igarashi, G. Malinowski, M. Hehn, and S. Mangin, "Spin-transport Mediated Single-shot All-optical Magnetization Switching of Metallic Films," Journal of the Physical Society of Japan vol. 90, 081009 (13 pages), June 2021. DOI:10.7566/JPSJ.90.081009
  25. T. Dohi, S. Fukami, and H. Ohno, "Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction," Physical Review B vol. 103, 214450 (9 pages), June 2021. DOI:10.1103/PhysRevB.103.214450
  26. J.-Y. Yoon, Y. Takeuchi, S. DuttaGupta, Y. Yamane, S. Kanai, J. Ieda, H. Ohno, and S. Fukami, "Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn3+xSn1-x thin films," AIP Advances vol. 11, 065318 (6 pages), June 2021. DOI:10.1063/5.0043192
  27. R. Sharma, R. Mishra, T. Ngo, Y. Guo, S. Fukami, H. Sato, H. Ohno, and H. Yang, "Electrically connected spin-torque oscillators array for 2.4-GHz WiFi band transmission and energy harvesting," Nature Communications vol. 12, 2924 (10 pages), May 2021. DOI:10.1038/s41467-021-23181-1
  28. Y. Takeuchi, Y. Yamane, J. Yoon, R. Itoh, B. Jinnai, S. Kanai, J. Ieda, S. Fukami, and H. Ohno, "Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque," Nature Materials, vol. 20, pp. 1364-1370, May 2021. DOI:10.1103/10.1038/s41563-021-01005-3
  29. Q. Shao, P. Li, L. Liu, H. Yang, S. Fukami, A. Razavi, H. Wu, F. Freimuth, Y. Mokrousov, M. D. Stiles, S. Emori, A. Hoffmann, J. Akerman, K. Roy, J. Wang, S. Yang, K. Garellob, and W. Zhang, "Roadmap of spin-orbit torques," IEEE Transactions on Magnetics, vol. 57, 800439(39 pages), May 2021. DOI:10.1109/TMAG.2021.3078583
  30. K. Y. Camsari, M. M. Torunbalci, W. A. Borders, H. Ohno, and S. Fukami, "Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits," Physical Review Applied, vol. 15, 044049 (10 pages), April 2021. DOI:10.1103/PhysRevApplied.15.044049
  31. G. Wolfowicz, F. J. Heremans, C. P. Anderson, S. Kanai, H. Seo, A. Gali, G. Galli, and D. D. Awschalom, "Quantum guidelines for solid-state spin defects," Nature Reviews Materials, vol. 6, pp. 906-925, April 2021. DOI:10.1038/s41578-021-00306-y
  32. S. Kanai, K. Hayakawa, H. Ohno, and S. Fukami, "Theory of relaxation time of stochastic nanomagnets," Physical Review B, vol. 103, 094423 (12 pages), March 2021. DOI:10.1103/PhysRevB.103.094423
  33. K. Hayakawa, S. Kanai, T. Funatsu, J. Igarashi, B. Jinnai, W. A. Borders, H. Ohno, and S. Fukami, "Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions," Physical Review Letters, vol. 126, 117202 (6 pages), March 2021. DOI:10.1103/PhysRevLett.126.117202
  34. J. Ieda and Y. Yamane, "Intrinsic and extrinsic tunability of Rashba spin-orbit coupled emergent inductors," Physical Review B, vol. 103, L100402 (5 pages), March 2021. DOI:10.1103/PhysRevB.103.L100402
  35. C. Zhang, Y. Takeuchi, S. Fukami, and H. Ohno, "Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin-orbit torque," Applied Physics Letters, vol. 118, 092406 (4 pages), March 2021. DOI:10.1063/5.0039061
  36. B. Jinnai, J. Igarashi, K. Watanabe, E.C.I. Enobio, S. Fukami, and H. Ohno, "Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions," Applied Physics Letters, vol. 118, 082404 (5 pages), February 2021. DOI:10.1063/5.0043058
  37. A. K. Dhiman, T. Dohib, W. Dobrogowski, Z. Kurant, I. Sveklo, S. Fukami, H. Ohno, and A. Maziewski, "Magnetization processes and magnetic domain structures in Ta/CoFeB/MgO stacks," Journal of Magnetism and Magnetic Materials, vol. 529, 167699 (17 pages), February 2021. DOI:10.1016/j.jmmm.2020.167699
  38. J. Igarashi, B. Jinnai, V. Desbuis, S. Mangin, S. Fukami, and H. Ohno, "Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions," Applied Physics Letters, vol. 118, 012409 (5 pages), January 2021. DOI:10.1063/5.0029031
    39. 2020
  39. M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu, "Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition," IEEE Journal of Solid-State Circuits, vol. 56, pp. 1116-1128, December 2020. DOI:10.1109/JSSC.2020.3039800
  40. J. Igarashi, Q. Remy, S. Iihama, G. Malinowski, M. Hehn, J. Gorchon, J. Hohlfeld, S. Fukami, H. Ohno, and S. Mangin, "Engineering Single-Shot All-Optical Switching of Ferromagnetic Materials," Nano Letters, vol. 20, 8654-8660, November 2020. DOI:10.1021/acs.nanolett.0c03373
  41. M. Shinozaki, T. Dohi, J. Igarashi, J. Llandro, S. Fukami, H. Sato, and H. Ohno, "Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance," Applied. Physics Letters, vol. 117, 202404 (4 pages), October 2020. DOI:10.1063/5.0020591
  42. S. DuttaGupta, A. Kurenkov, O. A. Tretiakov, G. Krishnaswamy, G. Sala, V. Krizakova, F. Maccherozzi, S. S. Dhesi, P. Gambardella, S. Fukami, and H. Ohno, "Spin-orbit torque switching of an antiferromagnetic metallic heterostructure," Nature Communications, vol. 11, 5715 (8 pages), November 2020. DOI:10.1038/s41467-020-19511-4
  43. G. K. Krishnaswamy, A. Kurenkov, G. Sala, M. Baumgartner, V. Krizakova, C. Nistor, F. Maccherozzi, S. S. Dhesi, S. Fukami, H. Ohno, and P. Gambardella, "Multidomain Memristive Switching of Pt38Mn62/[Co/Ni]n Multilayers," Physical Review Applied, vol. 14, 044036 (10 pages), October 2020. DOI:10.1103/PhysRevApplied.14.044036
  44. Q. Remy, J. Igarashi, S. Iihama, G. Malinowski, M. Hehn, J. Gorchon, J. Hohlfeld, S. Fukami, H. Ohno, and S. Mangin, "Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet," Advanced Science, vol. 7, 2001996 (8 pages), October 2020. DOI:10.1002/advs.202001996
  45. K. Ishibashi, S. Iihama, Y. Takeuchi, K. Furuya, S. Kanai, S. Fukami, and S. Mizukami, "All-optical probe of magnetization precession modulated by spin-orbit torque," Applied Physics Lertters, vol. 117, 122403 (4 pages), September 2020. DOI:10.1063/5.0020852
  46. S. Fukami, V. O. Lorenz, and O. Gomonay, "Antiferromagnetic spintronics," Journal of Applied Physics Letters, vol. 128, 070401 (3 pages), August 2020. DOI:10.1063/5.0023614
  47. H. Fulara, M. Zahedinejad, R. Khymyn, M. Dvornik, S. Fukami, S. Kanai, H. Ohno, and J. Akerman, "Giant voltage-controlled modulation of spin Hall nano-oscillator damping," Nature Communications, vol. 11, 4006 (7 pages), August 2020. DOI:10.1038/s41467-020-17833-x
  48. K. V. De Zoysa, S. DuttaGupta, R. Itoh, Y. Takeuchi, H. Ohno, and S. Fukami, "Composition dependence of spin-orbit torque in Pt1-xMnx/CoFeB heterostructures," Applied Physics Letters, vol. 117, 012402 (4 pages), July 2020. DOI:10.1063/5.0011448
  49. S. Fukami, W. A. Borders, A. Z. Pervaiz, K. Y. Camsari, S. Datta, and H. Ohno, "Probabilistic computing based on spintronics technology," Conference Proceedings, 2020 IEEE Silicon Nanoelectronics Workshop, 21-22, July 2020. DOI:10.1109/SNW50361.2020.9131622
  50. A. Kurenkov, S. Fukami, and H. Ohno, "Neuromorphic computing with antiferromagnetic spintronics," Journal of Applied Physics, vol. 128, 010902 (12 pages), July 2020. DOI:10.1063/5.0009482
  51. O. Stejskal, A. Thiaville, J. Hamrle, S. Fukami, and H. Ohno, "Current distribution in metallic multilayers from resistance measurements," Physical Review B, vol. 101, 235437 (9 pages), June 2020. DOI:10.1103/PhysRevB.101.235437
  52. B. Jinnai, K. Watanabe S. Fukami, and H. Ohno, "Scaling magnetic tunnel junction down to single-digit nanometers-Challenges and prospects," Applied Physics Letters, vol. 116, 160501 (7 pages), April 2020. DOI:10.1063/5.0004434
  53. J. Llandro, D. M. Love, A. KovacsJan, J. Caron, K. N. Vyas, A. Ka-kay, R. Salikhov, K. Lenz, J. Fassbender, M. R. J. Scherer, C. Cimorra, U. Steiner, C. H. W. Barnes, R. E. Dunin-Borkowski, S. Fukami, and H. Ohno, "Visualizing Magnetic Structure in 3D Nanoscale Ni-Fe Gyroid Networks," Nano Letters, vol. 20, 3642-3650, April 2020. DOI:10.1021/acs.nanolett.0c00578
  54. J. Ishihara, G. Kitazawa, Y. Furusho, Y. Ohno, H. Ohno, and K. Miyajima, "Zero-field spin precession dynamics of high-mobility two-dimensional electron gas in persistent spin helix regime," Physical Review B, vol. 101, 094438 (5 pages), March 2020. DOI:10.1103/PhysRevB.101.094438
  55. N. Keswani, Y. Nakajima, N. Chauhan, T. Ukai, H. Chakraborti, K. D. Gupta, T. Hanajiri, S. Kumar, Y. Ohno, H. Ohno, and P. Das, "Complex switching behavior of magnetostatically coupled single-domain nanomagnets probed by micro-Hall magnetometry," Applied Physics Letters, vol. 116, 102401 (5 pages), March 2020. DOI:10.1063/1.5144841
  56. J. Grollier, D. Querlioz, K. Y. Camsari, K. Everschor-Sitte, S. Fukami, and M. D. Stiles, "Neuromorphic spintronics," Nature Electronics, vol. 3, pp. 360-370, March 2020. DOI:10.1038/s41928-019-0360-9
    57. 2019
  57. R. Itoh, Y. Takeuchi, S. DuttaGupta, S. Fukami, and H. Ohno, "Stack structure and temperature dependenceof spin-orbit torques in heterostructures withantiferromagnetic PtMn," Applied Physics Letters, vol. 115, 242404 (4 pages), December 2019. DOI:10.1063/1.5129829
  58. J. Yoon, Y. Takeuchi, R. Itoh, S. Kanai, S. Fukami, and H. Ohno, "Crystal orientation and anomalaous Hall effect of sputter-deposited non-colinear antiferromagnetic Mn3Sn thin films," Applied Physics Express, vol. 13, 013001 (4 pages), December 2019. DOI.org/10.7567/1882-0786/ab5874
  59. T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno, "Formation and current-induced motion of synthetic antiferromagnetic skyrmion bubbles," Nature communications, vol. 10, 5153 (6 pages), November 2019. DOI.org/10.1038/s41467-019-13182-6
  60. Y. -C. Lau, Z. Chi, T. Taniguchi, M. Kawaguchi, G. Shibata, N. Kawamura, M. Suzuki, S. Fukami, A. Fujimori, H. Ohno, and M. Hayashi, "Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers," Physical Review Materials, vol. 3, 104419 (8 pages), October 2019. DOI:10.1103/PhysRevMaterials.3.104419
  61. T. Saino, S. Kanai, M. Shinozaki, B. Jinnai, H. Sato, S. Fukami, and H. Ohno, "Write-error rate of nanoscale magnetic tunnel junctions in the precessional regime," Applied Physics Letters, vol. 115, 142406 (5 pages), October 2019. DOI:10.1063/1.5121157
  62. W. A. Borders, A. Z. Pervaiz, S. Fukami, K. Y. Camsari, H. Ohno, and S. Datta, "Integer factorization using stochastic magnetic tunnel junctions," Nature, vol. 573, 390-393, September 2019. DOI:10.1038/s41586-019-1557-9
  63. S. Gupta, F. Matsukura, and H. Ohno, "Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction," Journal of Physics D: Applied Physics, vol. 52, 495002 (6 pages), September 2019. DOI:10.1088/1361-6463/ab3fc6
  64. L. Chen, J. Zhao, D. Weiss, C.H. Back, F. Matsukura, and H. Ohno, "Magnetization dynamics and related phenomena in semiconductors with ferromagnetism," Journal of Semiconductors, vol. 40, 081502 (8 pages), August 2019. DOI:10.1088/1674-4926/40/8/081502
  65. T. Dietl, A. Bonanni, and H. Ohno, "Families of magnetic semiconductors - an overview," Journal of Semiconductors, vol. 40, 080301 (5 pages), August 2019. DOI:10.1088/1674-4926/40/8/080301
  66. A. Okada, Y. Takeuchi., K. Furuya, C. Zhang, H. Sato, S. Fukami, and H. Ohno, "Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance," Physical Review Applied, vol. 12, 014040 (11 pages), July 2019. DOI:10.1103/PhysRevApplied.12.014040
  67. A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, and H. Ohno, "Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spin-orbit torque switching," Advanced Materials, vol. 31, 1900636 (7 pages), April 2019. DOI:10.1002/adma.201900636
  68. T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno, "Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems," Applied Physics Letters, vol. 114, 042405 (5 pages), January 2019. DOI:10.1063/1.5084095
  69. Y. Takahashi, Y. Takeuchi, C. Zhang, B. Jinnai, S. Fukami, and H. Ohno, "Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance," Applied Physics Letters, vol. 114, 012410 (4 pages), January 2019. DOI:10.1063/1.5075542
    70. 2018
  70. H. Sato, P. Chureemart, F. Matsukura, R. W. Chantrell, H. Ohno, and R. F. L. Evans, "Temperature-dependent properties of CoFeB/MgO thin films: Experiments versus simulations," Physical Review B, vol. 98, 214428 (7 pages), December 2018. DOI:10.1103/PhysRevB.98.214428
  71. B. Jinnai, H. Sato, S. Fukami, and H. Ohno, "Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires," Applied Physics Letters, vol. 113, 212403 (4 pages), November 2018. DOI:10.1063/1.5045814
  72. S. DuttaGupta, R. Itoh, S. Fukami, and H. Ohno, "Angle dependent magnetoresistance in heterostructures with antiferromagnetic and non-magnetic metals," Applied Physics Letters, vol. 113, 202404 (5 pages), November 2018. DOI:10.1063/1.5049566
  73. M. Bersweiler, E. C. I. Enobio, S. Fukami, H. Sato, and H. Ohno, "An effect of capping-layer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/capping-layer structure," Applied Physics Letters, vol. 113, 172401 (4 pages), October 2018. DOI:10.1063/1.5050486
  74. S. Fukami and H. Ohno, "Perspective: Spintronic synapse for artificial neural network," Journal of Applied Physics, vol. 124, 151904 (8 pages), October 2018. DOI:10.1063/1.5042317
  75. W. A. Borders, S. Fukami, and H. Ohno, "Characterization of spin-orbit torque-controlled synapse device for artificial neural network applications," Japanese Journal of Applied Physics, vol. 57, 1002B2 (5 pages), September 2018. DOI:10.7567/JJAP.57.1002B2
  76. M. Pohlit, S. Rosler, Y. Ohno, H. Ohno, S. Molnar, Z. Fisk, J. Muller, and S. Wirth, "Evidence for Ferromagnetic Clusters in the Colossal-Magnetoresistance Material EuB6," Physical Review Letters, vol. 120, 257201 (5 pages), June 2018. DOI:10.1103/PhysRevLett.120.257201
  77. N. Ichikawa, T. Dohi, A. Okada, H. Sato, S. Fukami, and H. Ohno, "Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis," Applied Physics Letters, vol. 112, 202402 (5 pages), May 2018. DOI:10.1063/1.5035487
  78. Y. Takeuchi, C. Zhang, A. Okada, H. Sato, S. Fukami, and H. Ohno, "Spin-orbit torques in high-resistivity-W/CoFeB/MgO," Applied Physics Letters, vol. 112, 192408 (5 pages), April 2018. DOI:10.1063/1.5027855
  79. A. Okada, S. Kanai, S. Fukami, H. Sato, and H. Ohno, "Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance," Applied Physics Letters, vol. 111, 172402 (5 pages), April 2018. DOI:10.1063/1.5026418
  80. E. C. I. Enobio, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno, "Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement," Japanese Journal of Applied Physics, vol. 57, 04FN08 (4 pages), March 2018. DOI:10.7567/JJAP.57.04FN08
  81. M. Shinozaki, J. Igarashi, H. Sato, and H. Ohno, "Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions," Applied Physics Express, vol. 11, 043001 (4 pages), March 2018. DOI:10.7567/APEX.11.043001
  82. J. Železný, P. Wadley, K. Olejnik, A. Hoffmann, and H. Ohno, "Spin transport and spin torque in antiferromagnetic devices," Nature Physics, vol. 14, 220-228 (9 pages), March 2018. DOI:10.1038/s41567-018-0062-7
  83. C. Zhang, S. Fukami, S. DuttaGupta, H. Sato, and H. Ohno, "Time and spatial evolution of spin-orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes," Japanese Journal of Applied Physics, vol. 57, 04FN02 (5 pages), February 2018. DOI:10.7567/JJAP.57.04FN02
  84. K. Watanabe, B. Jinnai, S. Fukami, H. Sato, and H. Ohno, "Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions," Nature Communications, vol. 9, 663 (6 pages), February 2018. DOI:10.1038/s41467-018-03003-7
  85. S. Gupta, S. Kanai, F. Matsukura, and H. Ohno, "Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi1-xSbx)2Te3," Japanese Journal of Applied Physics, vol. 57, 020302 (4 pages), January 2018. DOI:10.7567/JJAP.57.020302

    2017
  86. S. Bhatti, R. Sabiaa, A. Hirohota, H. Ohno, S. Fukami, and S.N. Piramanayagam, "Spintronics based random access memory: a review," Material Today, vol. 20, 9 (19 pages), November 2017. DOI:10.1016/j.mattod.2017.07.007
  87. H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, H. Inoue, M. Muraguchi, M. Niwa, H. Ohno, and T. Endoh, "Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer," IEEE Transactions on Magnetics, vol. 53, 2501604 (4 pages), November 2017. DOI:10.1109/TMAG.2017.2701838
  88. S. DuttaGupta, T. Kanemura, C. Zhang, A. Kurenkov, S. Fukami, and H. Ohno, "Spin-orbit torques and Dzyaloshinskii-Moriya interaction in PtMn/[Co/Ni] heterostructures," Applied Physics Letters, vol. 111, 182412 (5 pages), November 2017. DOI:10.1063/1.5005593
  89. W. A. Borders, S. Fukami, and H. Ohno, "Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device," IEEE Transactions on Magnetics, vol. 53, 6000804 (4 pages), October 2017. DOI:10.1109/TMAG.2017.2703817
  90. M. Bersweiler, H. Sato, and H. Ohno, "Magnetic and Free-Layer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition," IEEE Magnetics Letters, vol. 8, 3109003 (3 pages), October 2017. DOI:10.1109/LMAG.2017.2748929
  91. J. Igarashi, J. Llandro, H. Sato, F. Matsukura, and H. Ohno, "Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis," Applied Physics Letters, vol. 111, 132407 (4 pages), September 2017. DOI:10.1063/1.5004968
  92. B. Jinnai, C. Zhang, A. Kurenkov, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno, "Spin-orbit torque induced magnetization switching in Co/Pt multilayers," Applied Physics Letters, vol. 111, 102402 (3 pages), September 2017. DOI:10.1063/1.5001171
  93. S. Gupta, S. Kanai, F. Matsukura, and H. Ohno, "Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr," Applied Physics Express, vol. 10, 103001 (3 pages), September 2017. DOI:10.7567/APEX.10.103001
  94. T. Dohi, S. Kanai, F. Matsukura, and H. Ohno, "Electric-field effect on spin-wave resonance in a nanoscale CoFeB/MgO magnetic tunnel junction," Applied Physics Letters, vol. 111, 027403 (3 pages), August 2017. DOI:10.1063/1.4999312
  95. H. Sato, S. Ikeda, and H. Ohno, "Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm," Japanese Journal of Applied Physics, vol. 56, 0802A6 (9 pages), July 2017. DOI:10.7567/JJAP.56.0802A6
  96. M. Bersweiler, K. Watanabe, H. Sato, F. Matsukura, and H. Ohno, "Magnetic properties of FeV/MgO-based structures," Applied Physics Express, vol. 10, 083001 (3 pages), July 2017. DOI:10.7567/APEX.10.083001
  97. S. Kanai, F. Matsukura, and H. Ohno, "Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions," Japanese Journal of Applied Physics, vol. 58, 0802A3 (7 pages), June 2017. DOI:10.7567/JJAP.56.0802A3
  98. S. Fukami, and H. Ohno, "Magnetization switching schemes for nanoscale three-terminal spintronics devices," Japanese Journal of Applied Physics, vol. 56, 0802A1 (12 pages), June2017. DOI:10.7567/JJAP.56.0802A1
  99. K. Watanabe, S. Fukami, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno, "Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers," Japanese Journal of Applied Physics, vol. 56, 0802B2 (4 pages), June 2017. DOI:10.7567/JJAP.56.0802B2
  100. J. J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno, Y. Ikuhara, and K. P. McKenna, "Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices," Scientific Reports, vol. 7, 45594 (9 pages), April 2017. DOI:10.1038/srep45594
  101. A. Okada, S. He, B. Gu, S. Kanai, A. Soumyanarayanan, S. T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, and C. Panagopoulos, "Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy," Proceedings of the National Academy of Sciences of the United States of America, vol. 114, 3815 (6 pages), March 2017. DOI:10.1073/pnas.1613864114
  102. A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, and H. Ohno, "Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures," Applied Physics Letters, vol. 110, 092410 (5 pages), March 2017. DOI:10.1063/1.4977838
  103. D. Suzuki, M. Natsui, S. Ikeda, T. Endoh, H. Ohno. and T. Hanyu, "Design of a variation-resilient single-ended non-volatile six-input lookup table circuit with a redundant-magnetic tunnel junction-based active load for smart Internet-of-things applications," ELECTRONICS LETTERS, vol. 53, 456 (2 pages), March 2017. DOI:10.1049/el.2016.4233
  104. M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu, "A spin transfer torque magnetoresistance random access memory-based high-density and ultralowpower associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching," Japanese Journal of Applied Physics, vol. 56, 04CN08 (9 pages), March 2017. https://iopscience.iop.org/article/10.7567/JJAP.56.04CN01
  105. N. Ohshima, H. Sato, S. Kanai, J. Llandro, S. Fukami, F. Matsukura, and H. Ohno, "Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field ," AIP Advances, vol. 7, 055927 (5 pages), February 2017. DOI:10.1063/1.4977224
  106. S. Gupta, S. Kanai, F. Matsukura, and H. Ohno, "Ferromagnetic resonance spectra of Py deposited on (Bi1-xSbx)2Te3," AIP Advances, vol. 7, 055919 (4 pages), January 2017. DOI:10.1063/1.4974891
  107. S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, and H. Ohno, "Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO," AIP Advances, vol. 7, 055918 (7 pages), January 2017. DOI:10.1063/1.4974889
  108. W A. Borders, H. Akima, S. Fukami, S, Moriya, S. Kurihara, Y. Horio, S. Sato, and H. Ohno, "Analogue spin.orbit torque device for artificial-neural-network-based associative memory operation," Applied Physics Express, vol. 10, 013007 (4 pages), January 2017. DOI:10.7567/APEX.10.013007
  109. M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, H. Ohno, "Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance," Applied Physics Express, vol. 10, 013001 (3 pages), January 2017. DOI:10.7567/APEX.10.013001

    2016
  110. C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno, "Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO," Applied Physics Letters, vol. 109, 192405 (5 pages), November 2016. DOI:10.1063/1.4967475
  111. T. Hanyu, T. Endoh, D. Suzuki, H. Koike, Y. Ma, N. Onizawa, M. Natsui, S. Ikeda, and H. Ohno, "Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing," Proceedings of the IEEE, vol. 104, 10 (20 pages), March 2016. DOI:10.1109/JPROC.2016.2574939
  112. H. Mazraati, T. Q. Le, A. A. Awad, S. Chung, E. Hirayama, S. Ikeda, F. Matsukura, H. Ohno, and J. Akerman, "Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis," Physical Review B, vol. 94, 104428 (6 pages), September 2016. DOI:10.1103/PhysRevB.94.104428
  113. Y. Hibino, T. Koyama, A. Obinata, T. Hirai, S. Ota, K. Miwa, S. Ono, F. Matsukura, H. Ohno, and D. Chiba, "Peculiar temperature dependence of electric-field effect on magnetic anisotropy in Co/Pd/MgO system," Applied Physics Letters, vol. 108, 082403 (4 pages), August 2016. DOI:10.1063/1.4961621
  114. E. Hirayama, H. Sato, S. Kanai, F. Matsukura, and H. Ohno, "Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis," IEEE Magnetics Letters, vol. 7, 3104004 (4 pages), July 2016. DOI:10.1109/LMAG.2016.2568163
  115. T. Dohi, S. Kanai, A. Okada, F. Matsukura, and H. Ohno, "Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB," AIP Advances, vol. 6, 075017 (4 pages), July 2016. DOI:10.1063/1.4959905
  116. S. Ishikawa, Eli. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy," IEEE Transactions on Magnetics, vol. 52, 3400704 (4 pages), July 2016. DOI:10.1109/TMAG.2016.2517098
  117. H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, and T. Endoh, "Improvement of Thermal Tolerance of CoFeB/MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition," IEEE Transactions on Magnetics, vol. 52, 3401104 (4 pages), July 2016. DOI:10.1109/TMAG.2016.2518203
  118. K. Watanabe, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, "Magnetic Properties of CoFeB.MgO Stacks With Different Buffer-Layer Materials (Ta or Mo)," IEEE Transactions on Magnetics, vol. 52, 3400904 (4 pages), July 2016. DOI:10.1109/TMAG.2016.2514525
  119. T. Endoh, H. Koike, S. Ikeda, T. Hanyu, and H. Ohno, "An Overview of Nonvolatile Emerging Memories -Spintronics for Working Memories," IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, vol. 6, 109 (11 pages), June 2016. DOI: 10.1109/JETCAS.2016.2547704
  120. S. Souma, L. Chen, R. O. dowski, T. Sato, F. Matsukura, T. Dietl, H. Ohno, and T. Takahashi, "Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As," Scientific Reports, vol. 6, 27266 (10 pages), June 2016. DOI:10.1038/srep27266
  121. S. Kanai, F. Matsukura, and H. Ohno, "Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance," Applied Physics Letters, vol. 108, 192406 (4 pages), May 2016. DOI:10.1063/1.4948763
  122. S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, and M. Niwa, "Study on initial current leakage spots in CoFeB-capped MgO tunnel barrier by conductive atomic force microscopy," Japanese Journal of Applied Physics, vol. 55, 04EE05 (7 pages), March 2016. DOI:10.7567/JJAP.55.04EE05
  123. T. Endoh, H. Koike, S. Ikeda, T. Hanyu, and H. Ohno, "A 600-μW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme," Japanese Journal of Applied Physics, vol. 55, 04EF15 (11 pages), March 2016. DOI:10.7567/JJAP.55.04EF15
  124. Y. Nakatani, M. Hayashi, S. Kanai, S. Fukami, and H. Ohno, "Electric field control of Skyrmions in magnetic nanodisks," Applied Physics Letters, vol. 108, 152403 (6 pages), March 2016. DOI:10.1063/1.4945738
  125. S. Miyakozawa, L. Chen, F. Matsukura, and H. Ohno, "Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li," Applied Physics Letters, vol. 108, 112404 (3 pages), March 2016. DOI:10.1063/1.4944328
  126. Z. Wang, M. Saito, K. P. McKenna, S. Fukami, H. Sato, S. Ikeda, H. Ohno, and Y. Ikuhara, "Atomic-Scale Structure and Local Chemistry of CoFeB/MgO Magnetic Tunnel Junctions," Nano Letters, vol. 3, pp. 1530-1536, March 2016. DOI:10.1021/acs.nanolett.5b03627
  127. S. Fukami, T. Anekawa, C. Zhang, and H. Ohno, "A spin-orbit torque switching scheme with collinear magnetic easy axis and current configuration," Nature Nanotechnology, pp. 621-625, March 2016. DOI:10.1038/nnano.2016.29
  128. S. Fukami, T. Iwabuchi, H. Sato, and H. Ohno, "Current-induced domain wall motion in magnetic nanowires with various widths down to less than 20 nm," Japanese Journal of Applied Physics, vol. 54, 04EN01 (4 pages), February 2016. DOI:10.7567/JJAP.55.04EN01
  129. S. Fukami, C. Zhang, S. DuttaGupta, A. Kurenkov, H. Ohno, "Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system," Nature Materials, vol. 15, pp. 535-541, February 2016. DOI:10.1038/nmat4566

    2015
  130. S. DuttaGupta, S. Fukami, C. Zhang, H. Sato, M. Yamanouchi, F. Matsukura, and H. Ohno, "Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal," Nature Physics, vol. 12 , 3593 (5 pages), December 2015. DOI:10.1038/nphys3593
  131. Y. Takeuchi, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis," Applied Physics Letters, vol. 107, 152405 (3 pages), October 2015. DOI:10.1063/1.4933256
  132. Eli. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno, "CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeB-MgO Interface Structures," IEEE Magnetics Letters, vol. 6, 5700303 (3 pages), September 2015. DOI:10.1109/LMAG.2015.2475718
  133. E. Hirayama, S. Kanai, J. Ohe, H. Sato, F. Matsukura, and H. Ohno, "Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction," Applied Physics Letters, vol. 107, 132404 (4 pages), September 2015. DOI:10.1063/1.4932092
  134. F. Matsukura and H. Ohno, "Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate," Japanese Journal of Applied Physics, vol. 54, 098003 (2 pages), August 2015. DOI:10.7567/JJAP.54.098003
  135. L. Chen, F. Matsukura, and H. Ohno, "Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As," Physical Review Letters, vol. 115, 057204 (5 pages), July 2015. DOI:10.1103/PhysRevLett.115.057204
  136. S. D'Ambrosio, L. Chen, H. Nakayama, F. Matsukura, T. Dietl, and H. Ohno, "Ferromagnetic resonance of Py deposited on ZnO grown by molecular beam epitaxy," Japanese Journal of Applied Physics, vol. 54, 093001 (4 pages), July 2015. DOI:10.7567/JJAP.54.093001
  137. C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno, "Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO," Applied Physics Letters, vol. 107, 012401 (4 pages), July 2015. DOI:10.1063/1.4926371
  138. S. Fukami, J. Ieda, and H. Ohno, "Thermal stability of a magnetic domain wall in nanowires," Physical Review B, vol. 91, 235401 (7 pages), June 2015. DOI:10.1103/PhysRevB.91.235401
  139. H. Nakayama, L. Chen, H.W. Chang, H. Ohno, and F. Matsukura, "Inverse spin Hall effect in Pt/(Ga,Mn)As," Applied Physics Letters, vol. 106, 222405 (4 pages), June 2015. DOI:10.1063/1.4922197
  140. F. Matsukura, Y. Tokura and H. Ohno, "Control of magnetism by electric fields," Nature Nanotechnology, vol. 10, 209 (12 pages), March 2015. DOI:10.1038/nnano.2015.22
  141. K. Watanabe, S. Ishikawa, H. Sato, S. Ikeda, M. Yamanouchi, S. Fukami, F. Matsukura, and H. Ohno, "Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses," Japanese Journal of Applied Physics, vol. 54, 04EM04 (3 pages), March 2015. DOI:10.7567/JJAP.54.04DM04
  142. E. Hirayama, S. Kanai, K. Sato, M. Yamanouchi, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno, "In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis," Japanese Journal of Applied Physics, vol. 54, 04EM03 (3 pages), February 2015. DOI:10.7567/JJAP.54.04DM03
  143. E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno, "Ferromagnetic resonance in nanoscale CoFeB/MgO magnetic tunnel junctions," Journal of Applied Physics, vol. 117, 17B708 (4 pages), February 2015. DOI:10.1063/1.4908149
  144. S. Kanai, F. Matsukura, S. Ikeda, AAPPS H. Sato, S. Fukami, and H. Ohno, "Spintronics: from Basic Research to VLSI Application," AAPPS Bulletin, vol. 25, pp. 4-11, February 2015.
  145. R. Hiramatsu, K. -J. Kim, T. Taniguchi, T. Tono, T. Moriyama, S. Fukami, M. Yamanouchi, H. Ohno, Y. Nakatani, and T. Ono, "Localized precessional mode of domain wall controlled by magnetic field and dc current," Applied Physics Express, vol. 8, 023003 (4 pages), January 2015. DOI:10.7567/APEX.8.023003

    2014
  146. H. Jarollahi, N. Onizawa, V. Gripon, N. Sakimura, T. Sugibayashi, T. Endoh, H. Ohno, T. Hanyu, and W. J. Gross, "A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture," IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 4, pp. 460-474, December 2014. DOI:10.1109/JETCAS.2014.2361061
  147. S. Kanai, M. Gajek, D. C. Worledge, F. Matsukura, and H. Ohno, "Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages," Applied Physics Letters, vol. 105, 242409 (4 pages), December 2014. DOI:10.1063/1.4904956
  148. S. Kanai, M. Tsujikawa, Y. Miura, M. Shirai, F. Matsukura, and H. Ohno, "Magnetic anisotropy in Ta/CoFeB/MgO investigated by x-ray magnetic circular dichroism and first-principles calculation," Applied Physics Letters, vol. 105, 222409 (4 pages), December 2014. DOI:10.1063/1.4903296
  149. H. Honjo, S. Fukami, K. Ishihara, K. Kinoshita, Y. Tsuji, A. Morioka, R. Nebashi, K. Tokutome, N. Sakimura, M. Murahata, S. Miura, T. Sugibayashi, N. Kasai, and H. Ohno, "Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device," IEEE Transactions on Magnetics, vol. 50, 1401904 (4 pages), November 2014. DOI:10.1109/TMAG.2014.2325019
  150. S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno, "Domain Wall Motion Device for Nonvolatile Memory and Logic - Size Dependence of Device Properties," IEEE Transactions on Magnetics, vol. 50, 3401006 (6 pages), November 2014. DOI:10.1109/TMAG.2014.2321396
  151. K. Kinoshita, H. Honjo, S. Fukami, H. Sato, K. Mizunuma, K. Tokutome, M. Murahata, S. Ikeda, S. Miura, N. Kasai, and H. Ohno, "Process-induced damage and its recovery for a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis," Japanese Journal of Applied Physics, vol. 53, 103001 (6 pages), September 2014. DOI:10.7567/JJAP.53.103001
  152. J. Torrejon, J. Kim, J. Sinha, S. Mitani, M. Hayashi, M. Yamanouchi, H. Ohno, "Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers," Nature Communications, vol. 5, 4655 (8 pages), August 2014. DOI:10.1038/ncomms5655
  153. H. Sato, E.C.I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, S. Kanai, F. Matsukura, and H. Ohno, "Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm," Applied Physics Letters, vol. 105, 062403 (4 pages), August 2014. DOI:10.1063/1.4892924
  154. A. Okada, S. Kanai, M. Yamanouchi, S. Ikeda, F. Matsukura, and H. Ohno, "Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance," Applied Physics Letters, vol. 105, 052415 (4 pages), August 2014. DOI:10.1063/1.4892824
  155. H. W. Chang, S. Akita, F. Matsukura, and H. Ohno, "Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers," Journal of Crystal Growth, vol. 401, pp. 633-635, July 2014. DOI:10.1016/j.jcrysgro.2013.11.041
  156. S. Miyakozawa, L. Chen, F. Matsukura, and H. Ohno, "Properties of (Ga,Mn)As codoped with Li," Applied Physics Letters, vol. 104, 222408 (4 pages), June 2014. DOI:10.1063/1.4881636
  157. S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, H. Sato, F. Matsukura, and H. Ohno, "Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin transfer torque and electric field-effect," Applied Physics Letters, vol. 104, 212406 (3 pages), May 2014. DOI:10.1063/1.4880720
  158. J. Kim, J. Sinha, S. Mitani, M. Hayashi, S. Takahashi, S. Maekawa, M. Yamanouchi, and H. Ohno, "Anomalous temperature dependence of current-induced torques in CoFeB/MgO heterostructures with Ta-based underlayers," Physical Review B, vol. 89, 174424 (8 pages), May 2014. DOI:10.1103/PhysRevB.89.174424PRB

  159. M. Hayashi, J. Kim, M. Yamanouchi, and H. Ohno, "Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements," Physical Review B, vol. 89, 144425 (15 pages), May 2014. DOI:10.1103/PhysRevB.89.144425

  160. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability," Journal of the Magnetics Society of Japan, vol. 38, pp. 56-60, May 2014. DOI:10.3379/msjmag.1403R002

  161. Y. Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, K.-J. Kim, T. Moriyama, and T. Ono, "Effect of spin Hall torque on current-induced precessional domain wall motion," Applied Physics Express, vol. 7, 033005 (4 pages), May 2014. DOI:10.7567/APEX.7.033005

  162. D. Kobayashi, Y. Kakehashi, K. Hirose, S. Onoda, T. Makino, T. Ohshima, S. Ikeda, M. Yamanouchi, H. Sato, Eli I. C. Enobio, T. Endoh, and H. Ohno, "Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions," IEEE Transactions on Nuclear Science, pp. 1710-1716, April 2014. DOI:10.1109/TNS.2014.2304738

  163. K. Kinoshita, H. Honjo, S. Fukami, R. Nebashi, K. Tokutome, M. Murahata, S. Miura, N. Kasai, Ikeda, and H. Ohno, "Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion," Japanese Journal of Applied Physics, vol. 53, 03DF03 (6 pages), March 2014. DOI:10.7567/JJAP.53.03DF03
  164. T. Dietl and H. Ohno, "Dilute ferromagnetic semiconductors: Physics and spintronic structures," Reviews of Modern Physics, vol. 86, 187 (65 pages), March 2014. DOI:10.1103/RevModPhys.86.187

  165. M. Ono, J. Ishihara, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno, "Strain and origin of inhomogeneous broadening probed by optically detected nuclear magnetic resonance in a (110) GaAs quantum well," Physical Review B, vol. 89, 115308 (4 pages), March 2014. DOI:10.1103/PhysRevB.89.115308

  166. J. Ishihara, Y. Ohno, and H. Ohno, "Direct mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires," Japanese Journal of Applied Physics, vol. 53, 04EM04 (3 pages), March 2014. DOI:10.7567/JJAP.53.04EM04

  167. N. Sakimura, Y. Tsuji, R. Nebashi, H. Honjo, A. Morioka, K. Ishihara, K. Kinoshita, S. Fukami, S. Miura, N. Kasai, T. Endoh, H. Ohno, T. Hanyu, T. Sugibayashi, "A 90nm 20MHz Fully Nonvolatile Microcontroller for Standby-Power-Critical Applications," 2014 IEEE International Solid-State Circuits Conference, vol. 10.5, 184 (3 pages), February. 2014. DOI:10.1109/ISSCC.2014.6757392

  168. S. Fukami, M. Yamanouchi, Y. Nakatani, K.-J. Kim, T. Koyama, D. Chiba, S. Ikeda, N. Kasai, T. Ono, and H. Ohno, "Distribution of critical current density for magnetic domain wall motion," Journal of Applied Physics, vol. 115, 17D508 (3 pages), February 2014. DOI:10.1063/1.4866394

  169. S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer," Journal of Applied Physics, vol. 115, 17C719 (3 pages), February 2014. DOI:10.1063/1.4862724

  170. H. Sato, S. Ikeda, S. Fukami, H. Honjo, S. Ishikawa, M. Yamanouchi, K. Mizunuma, F. Matsukura, and H. Ohno, "Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs," Japanese Journal of Applied Physics, vol. 53, 04EM02 (3 pages), February 2014. DOI:10.7567/JJAP.53.04EM02

  171. C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura and H. Ohno, "Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis," Journal of Applied Physics, vol. 115, 17C714 (3 pages), January 2014. DOI:10.1063/1.4863260

  172. L. Chen, S. Ikeda, F. Matsukura, and H. Ohno, "DC voltages in Py and Py/Pt under ferromagnetic resonance," Applied Physics Express, vol. 7, 013002 (4 pages), January 2014. DOI:10.7567/APEX.7.013002

  173. J. Ishihara, Y. Ohno, and H. Ohno, "Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well," Applied Physics Express, vol. 7, 013001 (4 pages), January 2014. DOI:10.7567/APEX.7.013001

  174. S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno, "Electric Field-Induced Magnetization Switching in CoFeB-MgO-Static Magnetic Field Angle Dependence," IEEE Transactions on Magnetics, vol. 50, 4200103 (3 pages), January 2014. DOI:10.1109/TMAG.2013.2278559



    2013
  175. S. Fukami, M. Yamanouchi, K.-J. Kim, T. Suzuki, N. Sakimura, D. Chiba, S. Ikeda, T. Sugibayashi, N. Kasai, T. Ono, and H. Ohno, "20-nm magnetic domain wall motion memory with ultralow-power operation," Electron Devices Meeting (IEDM), pp. 3.2.1-3.2.4, December 2013. DOI:10.1109/IEDM.2013.6724550

  176. H. Sato, T. Yamamoto, M. Yamanouchi, S. Ikeda, S. Fukami, K. Kinoshita, F. Matsukura, N. Kasai, and H. Ohno, "Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm," Electron Devices Meeting (IEDM), pp. 3.2.1-3.2.4, December 2013. DOI:10.1109/IEDM.2013.6724550

  177. C. Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, Fumihiro Matsukura, and H. Ohno, "Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO," Applied Physics Express, vol. 103, 262407 (3 pages), December 2013. DOI:10.1063/1.4859656

  178. E. C. I. Enobio, K. Ohtani, Y. Ohno, and H. Ohno, "Detection and measurement of electroreflectance on quantum cascade laser device using Fourier transform infrared microscope," Applied Physics Letters, vol. 103, 231106 (4 pages), December 2013. DOI:10.1063/1.4839421

  179. M. Kawaguchi, K. Shimamura, S. Fukami, F. Matsukura, H. Ohno, T. Moriyama, D. Chiba, and T. Ono, "Current-Induced Effective Fields Detected by Magnetotrasport Measurements," Applied Physics Express, vol. 6, 113002 (4 pages), October 2013. DOI:10.7567/APEX.6.113002

  180. D. Chiba, T. Ono, F. Matsukura, and H. Ohno, "Electric field control of thermal stability and magnetization switching in (Ga,Mn)As," Applied Physics Letters, vol. 103, 142418 (4 pages), October 2013. DOI:10.1063/1.4821778

  181. H. W. Chang, S. Akita, F. Matsukura, and H. Ohno, "Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure," Applied Physics Letters, vol. 103, 142402 (4 pages), September 2013. DOI:10.1063/1.4823592

  182. S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno, "Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents," Nature Communications, vol. 4, 2293 (6 pages), August 2013. DOI:10.1038/ncomms3293

  183. S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno, "In-plane magnetic field dependence of electric field-induced magnetization switching," Applied Physics Letters, vol. 103, 072408 (4 pages), August 2013. DOI:10.1063/1.4818676
  184. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis," IEEE Transactions on Magnetics, vol. 49, 4437 (4 pages), July 2013. DOI:10.1109/TMAG.2013.2251326
  185. S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, and H. Ohno, "CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition," Applied Physics Express, vol. 6, 073010 (3 pages), July 2013. DOI:10.7567/APEX.6.073010
  186. L. Chen, F. Matsukura, and H. Ohno, "Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance," Nature Communications, vol. 4, 3055 (6 pages), June 2013. DOI:10.1038/ncomms3055
  187. K.-J. Kim, R. Hiramatsu, T. Koyama, K. Ueda, Y. Yoshimura, D. Chiba, K. Kobayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, H. Kohno, G. Tatara, and T. Ono, "Two-barrier stability that allows low-power operation in current-induced domain-wall motion," Nature Communications, vol. 4, 3011 (6 pages), June 2013. DOI:10.1038/ncomms3011
  188. J. Sinha, M. Hayashi, A. J. Kellock, S. Fukami, M. Yamanouchi, H. Sato, S. Ikeda, S. Mitani, S.-H. Yang, S. S. P. Parkin, and H. Ohno, "Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers," Applied Physics Letters, vol. 102, 242405 (4 pages), June 2013. DOI:10.1063/1.4811269
  189. S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, and H. Ohno, "Electrical endurance of Co/Ni wire for magnetic domain wall motion device," Applied Physics Letters, vol. 102, 222410 (4 pages), June 2013. DOI:10.1063/1.4809734
  190. M. Yamanouchi, L. Chen, J. Kim, M. Hayashi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno, "Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper," Applied Physics Letters, vol. 102, 212408 (4 pages), May 2013. DOI:10.1063/1.4808033
  191. J. Ishihara, M. Ono, Y. Ohno, and H. Ohno, "A strong anisotropy of spin dephasing time of quasi-one dimensional electron gas in modulation-doped GaAs/AlGaAs wires," Applied Physics Letters, vol. 102, 212402 (4 pages), May 2013. DOI:10.1063/1.4807171
  192. K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, and H. Ohno, " Size Dependence of Magnetic Properties of Nanoscale CoFeB-MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance," Applied Physics Express, vol. 6, 063002 (3 pages), May 2013. DOI:10.7567/APEX.6.063002
  193. S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer," Journal of Applied Physics, vol. 113, 17C721 (3 pages), April 2013. DOI:10.1063/1.4798499
  194. H. Ohno, "Bridging semiconductor and magnetism," Journal of Applied Physics, vol. 113, 136509 (5 pages), March 2013. DOI:10.1063/1.4795537
  195. M. Ono, J. Ishihara, G. Sato, Y. Ohno, and H. Ohno, "Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field," Applied Physics Express, vol. 6, 033002 (3 pages), February 2013. DOI:10.7567/APEX.6.033002
  196. L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, and A. Hirohata, "Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films," Physical Review B, vol. 87, 022401 (5 pages), January 2013. DOI:10.1103/PhysRevB.87.024401

    2012
  197. J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani and H. Ohno, "Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO," Nature Materials, vol. 12, pp. 240-245, December 2012. DOI:10.1038/NMAT3522
  198. S. Ikeda, H. Sato, M. Yamanouchi, H. Gan, K. Miura, K. Mizunuma, S. Kanai, S. Fukami, F. Matsukura, N. Kasai and H. Ohno, "RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI," SPIN, vol. 2, 1240003 (12 pages), December 2012. DOI:10.1142/S2010324712400036
  199. A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S.-H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, and C. S. Fadley, "Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission," Applied Physics Letters, vol. 101, 202402 (4 pages), November 2012. DOI:10.1063/1.4766351
  200. S. Ikeda, R. Koizumi, H. Sato, M. Yamanouchi, K. Miura, K. Mizunuma, H. Gan, F. Matsukura, and H. Ohno , "Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures," IEEE Transactions on Magnetics, vol. 48, 3829 (4 pages), October 2012. DOI:10.1109/TMAG.2012.2203588
  201. S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno, "Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction," Applied Physics Letters, vol. 101, 122403 (3 pages), September 2012. DOI:10.1063/1.4753816
  202. D. Markó, T. Devolder, K. Miura, K. Ito, Joo-Von Kim, C. Chappert, S. Ikeda, and H. Ohno, "Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars," Journal of Applied Physics, vol. 112, 053922 (4 pages), September 2012. DOI:10.1063/1.4751025
  203. P. Das, A. Bajpai, Y. Ohno, H. Ohno, and J. Müller, "On the influence of nanometer-thin antiferromagnetic surface layer on ferromagnetic CrO2," Journal of Applied Physics, vol. 112, 053921 (4 pages), September 2012. DOI:10.1063/1.4751350
  204. K. Kinoshita, T. Yamamoto, H. Honjo, N. Kasai, S. Ikeda, and H. Ohno, "Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions," Japanese Journal of Applied Physics, vol. 51, 08HA01 (6 pages), August 2012. DOI:10.1143/JJAP.51.08HA01
  205. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno, "Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure," Applied Physics Letters, vol. 101, 022414 (4 pages), July 2012. DOI:10.1063/1.4736727
  206. K.-J. Kim, D. Chiba, K. Kobayashi, S. Fukami, M. Yamanouchi, H. Ohno, S.-G. Je, S.-B. Choe, and T. Ono, "Observation of magnetic domain-wall dynamics transition in Co/Ni multilayered nanowires," Applied Physics Letters, vol. 101, 022407 (4 pages), July 2012. DOI:10.1063/1.4733667
  207. S. Fukami, N. Ishiwata, N. Kasai, M. Yamanouchi, H. Sato, S. Ikeda, and H. Ohno, "Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device," IEEE Transactions on Magnetics, vol. 48, 7 (6 pages), July 2012. DOI:10.1109/TMAG.2012.2187792
  208. E. C. I. Enobio, H. Sato, K. Ohtani, Y. Ohno, and H. Ohno , "Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope," Japanese Journal of Applied Physics, vol. 51, 06FE15 (3 pages), June 2012. DOI:10.1143/JJAP.51.06FE15
  209. M. Ghali, K. Ohtani, Y. Ohno, and H. Ohno, "Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons," Japanese Journal of Applied Physics, vol. 51, 06FE14 (3 pages), June 2012. DOI:0.1143/JJAP.51.06FE14
  210. M. Kawaguchi, K. Shimamura, S. Ono, S. Fukami, F. Matsukura, H. Ohno, D. Chiba, and T. Ono, "Electric Field Effect on Magnetization of an Fe Ultrathin Film," Applied Physics Express, vol. 5, 063007 (3 pages), June 2012. DOI:10.1143/APEX.5.063007
  211. Y. Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, and Teruo Ono, "Current-Induced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire under In-Plane Magnetic Fields," Applied Physics Express, vol. 5, 063001 (3 pages), May 2012. DOI:10.1143/APEX.5.063001
  212. M. Hayashi, M. Yamanouchi, S. Fukami, J. Sinha, S. Mitani, and H. Ohno, "Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures," Applied Physics Letters, vol. 100, 192411 (4 pages), May 2012. DOI:10.1063/1.4711016
  213. L. Li, Y. Guo, X. Y. Cui, R. Zheng, K. Ohtani, C. Kong, A. V. Ceguerra, M. P. Moody, J. D. Ye, H. H. Tan, C. Jagadish, Hui Liu, C. Stampfl, H. Ohno, S. P. Ringer, and F. Matsukura, "Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate," Physical Review B, vol. 85, 174430 (8 pages), May 2012. DOI:10.1103/PhysRevB.85.174430
  214. A. Brataas, A. D. Kent, and H. Ohno, "Current-induced torques in magnetic materials," Nature Materials, vol. 11 372 (10 pages), May 2012. DOI:10.1038/nmat3311
  215. S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, H. D. Gan, S. Ikeda, and H. Ohno, "Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures," Journal of Applied Physics, vol. 111, 083922 (7 pages), April 2012. DOI:10.1063/1.4707964
  216. H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, and H. Ohno, "CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions," IEEE Magnetics Letters, vol. 3, 3000204 (4 pages), April 2012. DOI:10.1109/LMAG.2012.2190722
  217. T. Kawahara, K. Ito, R. Takemura, and H. Ohno, "Spin-transfer torque RAM technology: Review and prospect," Microelectronics Reliability, vol. 52, pp. 613-627, April 2012. DOI:10.1016/j.microrel.2011.09.028
  218. D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal-Oxide-Semiconductor Hybrid Structure," Japanese Journal of Applied Physics, vol. 51, 04DM02 (5 pages), April 2012. DOI:10.1143/JJAP.51.04DM02
  219. H. Yamamoto, J. Hayakawa, K. Miura, K. Ito, H. Matsuoka, S. Ikeda, and H. Ohno, "Dependence of magnetic anisotropy in Co20Fe60B20 free layers on capping layers in MgO-based magnetic tunnel junctions with in-plane easy axis," Applied Physics Express, vol. 5, 053002 (3 pages), April 2012. DOI:10.1143/APEX.5.053002
  220. S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory," Journal of Applied Physics, vol. 111, 07E336 (3 pages), March 2012. DOI:10.1063/1.3677875
  221. H. Honjo, S. Fukami, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai and H. Ohno, "Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits," Journal of Applied Physics, vol. 111, 07C709 (4 pages), March 2012. DOI:10.1063/1.3675268
  222. H. Honjo, S. Fukami, T. Suzuki, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai and H. Ohno, "Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions," Journal of Applied Physics, vol. 111, 07C903 (4 pages), February 2012. DOI:10.1063/1.3671437
  223. M. Kodzuka, T. Ohkubo, K. Hono, S. Ikeda, H. D. Gan, and H. Ohno, "Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions, " Journal of Applied Physics, vol. 111, 043913 (4 pages), February 2012. DOI:10.1063/1.3688039
  224. M. Ghali, K. Ohtani, Y. Ohno and H. Ohno, "Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field," Nature Communications, vol. 3, 661 (6 pages), February 2012. DOI:10.1038/ncomms1657
  225. D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions," Journal of Applied Physics, vol. 111, 07E318 (3 pages), February 2012. DOI:10.1063/1.3672411
  226. S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory," Japanese Journal of Applied Physics, vol. 51, 02BM06 (5 pages), February 2012. DOI:10.1143/JJAP.51.02BM06
  227. F. Iga, Y. Yoshida, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme," Japanese Journal of Applied Physics, vol. 51, 02BM02 (5 pages), February 2012. DOI:10.1143/JJAP.51.02BM02
  228. T. Ohsawa, F. Iga, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction," Japanese Journal of Applied Physics, vol. 51, 02BD01 (6 pages), February 2012. DOI:10.1143/JJAP.51.02BD01
  229. R. Takemura, T. Kawahara, K. Ono, K. Miura, H. Matsuoka, H. Ohno, "Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond," Solid-State Electronics, vol. 58, pp. 1-2, January 2011. DOI:10.1109/IMW.2010.5488324
  230. M. Hayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, S. Mitani and H. Ohno, "Domain wall dynamics driven by spin transfer torque and the spin-orbit field," Journal of Physics: Condensed Matter, vol. 24, 024221 (9 pages), January 2012. DOI: 10.1088/0953-8984/24/2/024221

    2011
  231. H. D. Gan, H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, R. Koizumi, F. Matsukura, and H. Ohno, "Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions, " Applied Physics Letters, vol. 99, 252507 (4 pages), December 2011. DOI:10.1063/1.3671669
  232. K. Miura, R. Sugano, M. Ichimura, J. Hayakawa, S. Ikeda, H. Ohno, and S. Maekawa, "Reduction of intrinsic critical current density under a magnetic field along the hard axis of a free layer in a magnetic tunnel junction," Physical Review B, vol. 84, 174434 (5 pages), November 2011. DOI:10.1103/PhysRevB.84.174434
  233. M. Yamanouchi, A. Jander, P. Dhagat, S. Ikeda, F. Matsukura, and H. Ohno, "Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy," IEEE Magnetics Letters, vol. 2, 3000304 (4 pages), July 2011. DOI:10.1109/LMAG.2011.2159484
  234. P. Das, F. Porrati, S. Wirth, A. Bajpai, Y. Ohno, H. Ohno, M. Huth, and J. Muller, "Domain wall dynamics in a single CrO2 grain," Journal of Physics: Conference Series, vol. 303, 012056 (6 pages), July 2011. DOI:10.1088/1742-6596/303/1/012056
  235. H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, H. D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, and H. Ohno, "Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions," Applied Physics Letters, vol. 99, 042501 (3 pages), July 2011. DOI:10.1063/1.3617429
  236. S. Matsunaga, M. Natsui, S. Ikeda, K. Miura, T. Endoh, H. Ohno, and T. Hanyu, "Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme," Japanese Journal of Applied Physics, vol. 50, 063004 (7 pages), June 2011. DOI:10.1143/JJAP.50.063004
  237. H. D. Gan, S.Ikeda, M. Yamanouchi, K. Miura, K. Mizunuma, J. Hayakawa, F. Matsukura, and H. Ohno, "Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures," IEEE Transactions on Magnetics, vol. 47, 1567 (4 pages), June 2011. DOI:10.1109/TMAG.2010.2104137
  238. T. Devolder, L. Bianchini, K. Miura, K. Ito, Joo-Von Kim, P. Crozat, V. Morin, A. Helmer, C. Chappert, S. Ikeda, and H. Ohno, "Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions," Applied Physics Letters, vol. 98, 162502 (3 pages), April 2011. DOI:10.1063/1.3576937
  239. J. Ishihara, M. Ono, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno, "Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well," Japanese Journal of Applied Physics, vol. 50, 04DM03 (3 pages), April 2011. DOI:10.1143/JJAP.50.04DM03
  240. T. Suzuki, S. Fukami, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, and H. Ohno, "Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire," Applied Physics Letters, vol. 98, 142502 (3 pages), April 2011. DOI:10.1063/1.3579155
  241. M. Yamanouchi, R. Koizumi, S. Ikeda, H. Sato, K. Mizunuma, K. Miura, H. D. Gan, F. Matsukura, and H. Ohno, "Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure," Journal of Applied Physics, vol. 109, 07C712 (3 pages), March 2011. DOI:10.1063/1.3554204
  242. K. Mizunuma, S. Ikeda, H. Sato, M. Yamanouchi, H. D. Gan, K. Miura, H. Yamamoto, J. Hayakawa, F. Matsukura, and H. Ohno, "Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures," Journal of Applied Physics, vol. 109, 07C711 (3 pages), March 2011. DOI:10.1063/1.3554092
  243. S. Fukami, T. Suzuki, Y. Nakatani, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, and H. Ohno, "Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire," Applied Physics Letters, vol. 98, 082504 (3 pages), February 2011. DOI:10.1063/1.3558917
  244. K. Mizunuma, M. Yamanouchi, S. Ikeda, H. Sato, H. Yamamoto, H. D. Gan, K. Miura, J. Hayakawa, F. Matsukura, and H. Ohno, "Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers," Applied Physics Express, vol. 4, 023002 (3 pages), February 2011. DOI:10.1143/APEX.4.023002
  245. S. Kanai, M. Endo, S. Ikeda, F. Matsukura, and H. Ohno, "Magnetic Anisotropy Modulation in Ta/ CoFeB/ MgO Structure by Electric Fields," Journal of Physics: Conference Series, vol. 266, 012092 (5 pages), January 2011. DOI:10.1088/1742-6596/266/1/012092

    2010
  246. M. Endo, F. Matsukura, H. Ohno, "Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As," Applied Physics Letters, vol. 97, 222501 (3 pages), November 2010. DOI:10.1063/1.3520514
  247. H. Ohno, "A window on the future of spintronics," Nature Materials, vol. 9, pp. 952-954, November 2010. DOI:10.1038/nmat2913
  248. D. Chiba, F. Matsukura, and H. Ohno, "Electrically Defined Ferromagnetic Nanodots," Nano Letters, vol. 10, pp. 4505-4508, November 2010. DOI:10.1021/nl102379h
  249. A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko, A. Ohtomo, and M. Kawasaki, "Observation of the fractional quantum Hall effect in an oxide," Nature Materials, vol. 9, pp. 889-893, November 2010. DOI:10.1038/NMAT2874
  250. M. Kohda, J. Ogawa, J. Shiogai, F. Matsukura, Y. Ohno, H. Ohno, J. Nitta, "Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires," Physica E, vol. 42, pp. 2685-2689, October 2010. DOI:10.1016/j.physe.2009.12.019
  251. Y. Nishitani, M. Endo, F. Matsukura, H. Ohno, "Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film," Physica E, vol. 42, pp. 2681-2684, October 2010. DOI:10.1016/j.physe.2009.12.054
  252. J. Misuraca, J. Trbovic, J. Lu, J. Zhao, Y. Ohno, H. Ohno, P. Xiong, and S. V. Molnﾃ｡r, "Band-tail shape and transport near the metal-insulator transition in Si-doped Al0.3Ga0.7As," Physical Review B, vol. 81, 045208 (6 pages), September 2010. DOI:10.1103/PhysRevB.82.125202
  253. S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction, " Nature Materials, vol. 9, pp. 721-724, August 2010. DOI:10.1038/NMAT2804
  254. S. Matsuzaka, Y. Ohno, and H. Ohno, "Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopy," Physica E, vol. 42, pp. 2702-2706 (5 pages), August 2010. DOI:10.1016/j.physe.2010.08.006
  255. A. Kanda, A. Suzuki, F. Matsukura, and H. Ohno, "Domain wall creep in (Ga,Mn)As," Applied Physics Letters, vol. 97, 032504 (3 pages), July 2010. DOI:10.1063/1.3467048
  256. M. Endo, S. Kanai, S. Ikeda, F. Matsukura, and H. Ohno, "Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures," Applied Physics Letters, vol. 96, 212503 (3 pages), May 2010. DOI:10.1063/1.3429592
  257. H. D. Gan, S. Ikeda, W. Shiga, J. Hayakawa, K. Miura, H. Yamamoto, H. Hasegawa, F. Matsukura, T. Ohkubo, K. Hono, and H. Ohno, "Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions," Applied Physics Letters, vol. 96, 192507 (3 pages), May 2010. DOI:10.1063/1.3429594
  258. D. Chiba, Y. Nakatani, F. Matsukura, and H. Ohno, "Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy," Applied Physics Letters, vol. 96, 192506 (3 pages), May 2010. DOI:10.1063/1.3428959
  259. T. Endoh, F. Iga, S. Ikeda, K. Miura, J. Hayakawa, M. Kamiyanagi, H. Hasegawa, T. Hanyu, and H. Ohno, "The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal-Oxide-Semiconductor Circuits," Japanese Journal of Applied Physics, vol. 49, 04DM06 (5 pages), April 2010. DOI:10.1143/JJAP.49.04DM06
  260. S. Matsunaga, M. Natsui, K. Hiyama, T. Endoh, H. Ohno, and T. Hanyu, "Fine-Grained Power-Gating Scheme of a Metal-Oxide-Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory," Japanese Journal of Applied Physics, vol. 49, 04DM05 (5 pages), April 2010. DOI:10.1143/JJAP.49.04DM05
  261. K. Mizunuma, S. Ikeda, H. Yamamoto, H. D. Gan, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, H. Ohno, "CoFeB inserted perpendicular magnetic tunnel junctions with CoFe/Pd multilayers for high tunnel magnetoresistance ratio," Japanese Journal of Applied Physics, vol. 49, 04DM04 (4 pages), April 2010. DOI:10.1143/JJAP.49.04DM04
  262. R. Takemura, T. Kawahara, K. Miura, H. Yamamoto, J. Hayakawa, N. Matsuzaki, K. Ono, M. Yamanouchi, K. Ito, H. Takahashi, S. Ikeda, H. Hasegawa, H. Matsuoka, and H. Ohno, "A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme," IEEE Journal of Solid-State Circuits, vol. 45, pp. 869-879, April 2010. DOI:10.1109/JSSC.2010.2040120
  263. S. R. Dunsiger, J. P. Carlo, T. Goko, G. Nieuwenhuys, T. Prokscha, A. Suter, E. Morenzoni, D. Chiba, Y. Nishitani, T. Tanikawa, F. Matsukura, H. Ohno, J. Ohe, S. Maekawa, and Y. J. Uemura, "Spatially homogeneous ferromagnetism of (Ga, Mn)As," Nature Materials, vol. 9, pp. 299-303, April 2010. DOI:10.1038/NMAT2715
  264. T. Takahashi, S. Matsuzaka, Y. Ohno, and H. Ohno, "Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well," Physica E, vol. 42, pp. 2609-2701, March 2010. DOI:10.1016/j.physe.2010.03.026
  265. D. Chiba, A. Werpachowska, M. Endo, Y. Nishitani, F. Matsukura, T. Dietl, and H. Ohno, "Anomalous Hall effect in field-effect structures of (Ga,Mn)As," Physical Review Letters, vol. 104, 106601 (4 pages), March 2010. DOI:10.1103/PhysRevLett.104.106601
  266. S. Marcet, K. Ohtani, and H. Ohno, "Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot," Applied Physics Letters, vol. 96, 101117 (3 pages), March 2010. DOI:10.1063/1.3360212
  267. M. Ono, H. Kobayashi, S. Matsuzaka, Y. Ohno, and H. Ohno, "Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well," Applied Physics Letters, vol. 96, 071907 (3 pages), February 2010. DOI:10.1063/1.3309687
  268. X. Kozina, S. Ouardi, B. Balke, G. Stryganyuk, G. H. Fecher, C. Felser, S. Ikeda, H. Ohno, and E. Ikenaga, " A nondestructive analysis of the B diffusion in Ta-CoFeB-MgO-CoFeB-Ta magnetic tunnel junctions by hard x-ray photoemission," Applied Physics Letters, vol. 96, 072105 (3 pages), €February 2010. DOI:10.1063/1.3309702
  269. Y. Nishitani, D. Chiba, M. Endo, M. Sawicki, F. Matsukura, T. Dietl, and €H. Ohno, "Curie temperature versus hole concentration in field-effect structures of (Ga,Mn)As," Physical Review B, vol. 81, 045208 (8 pages), January 2010. DOI:10.1103/PhysRevB.81.045208
  270. M. Endo, D. Chiba, H. Shimotani, F. Matsukura, Y. Iwasa, and H. Ohno, "Electric double layer transistor with a (Ga, Mn)As channel," Applied Physics Letters, vol. 96, 022515 (3 pages), January 2010. DOI:10.1063/1.3277146
  271. M. Ono, S. Matsuzaka, Y. Ohno, and H. Ohno, "Gate voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well," Journal of Superconductivity and Novel Magnetism, vol. 23, 131 (3 pages), January 2010. DOI:10.1007/s10948-009-0568-4
  272. S. Matsuzaka, Y. Ohno, and H. Ohno, "Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration," Journal of Superconductivity and Novel Magnetism, vol. 23, 37 (3 pages), January 2010. DOI:10.1007/s10948-009-0558-6
  273. M. Sawicki, D. Chiba, A. Korbecka, Y. Nishitani, J. A. Majewski, F. Matsukura, T. Dietl, and H. Ohno, "Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As," Nature Physics, vol. 6, pp. 22-25, January 2010. DOI:10.1038/NPHYS1455

    2009
  274. K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa, J. Hayakawa, F. Matsukura, and H. Ohno, "MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers," Applied Physics Letters, vol. 95, 232516 (3 pages), December 2009. DOI:10.1063/1.3265740
  275. S. Matsuzaka, Y. Ohno, and H. Ohno, "Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy ," Physical Review B, vol. 80, 241305(R) (4 pages), December 2009. DOI:10.1103/PhysRevB.80.241305
  276. J. H. Park, S. Ikeda, H. Yamamoto, H. Gan, K. Mizunuma, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, and H. Ohno, "Perpendicular magnetic tunnel junctions with CoFe/Pd multilayer electrodes and an MgO barrier," IEEE Transactions on Magnetics, vol. 45, pp. 3476-3479, September 2009. DOI:10.1109/TMAG.2009.2023237
  277. S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, S. Ikeda, and H. Ohno, "Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures," Journal of Applied Physics, vol. 106, 023920 (5 pages), July 2009. DOI:10.1063/1.3182817
  278. T. Devolder, J. V. Kim, C. Chappert, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, and H. Ohno, "Direct measurement of current-induced fieldlike torque in magnetic tunnel junctions," Journal of Applied Physics, vol. 105, 113924 (5 pages), June 2009. DOI:10.1063/1.3143033
  279. K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno, "Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells," Applied Physics Letters, vol. 94, 162104 (3 pages), April 2009. DOI:10.1063/1.3118584
  280. K. Ohtani, M. Belmoubarik, and H. Ohno, "Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy," Journal of Crystal Growth, vol. 311, pp. 2176-2178, March 2009. DOI:10.1016/j.jcrysgro.2008.09.134
  281. M. Kodzuka, T. Ohkubo, K. Hono, F. Matsukura, and H. Ohno, "3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film," Ultramicroscopy, vol. 109, pp. 644-648, March 2009. DOI:10.1016/j.ultramic.2008.11.011
  282. Y. Nishitani, D. Chiba, F. Matsukura, and H. Ohno, "ac susceptibility of (Ga, Mn)As probed by the anomalous Hall effect," Journal of Applied Physics, vol. 105, 07C516 (3 pages), March 2009. DOI:10.1063/1.3072078
  283. S. Matsunaga, K. Hiyama, A. Matsumoto, S. Ikeda, H. Hasegawa, K. Miura, J. Hayakawa, T. Endoh, H. Ohno, and T. Hanyu, "Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices," Applied Physics Express, vol. 2, 023004 (3 pages), February 2009. DOI:10.1143/APEX.2.023004
  284. T. T. Lin, K. Ohtani, and H. Ohno, "Thermally activated ongitudinal optical phonon scattering of a 3.8 THz GaAs quantum cascade laser ," Applied Physics Express, vol. 2, 022102 (3 pages), January 2009. DOI:10.1143/APEX.2.022102

    2008
  285. M. Sekikawa, K. Kiyoyama, H. Hasegawa, K. Miura, T. Fukushima, S. Ikeda, T. Tanaka, H. Ohno, and M. Koyanagi, "A novel SPRAM (spin-transfer torque RAM)-based reconfigurable logic block for 3D-stacked reconfigurable spin processor," in digests of technical papers of 2008 IEEE International Electron Devices Meeting (IEDM 2008), pp. 935-937, December 2008. DOI:10.1109/IEDM.2008.4796645
  286. A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, and M. Kawasaki, "Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric," Applied Physics Letters, vol. 93, 241905 (3 pages), December 2008. DOI:10.1063/1.3035844
  287. Y. Kondo, M. Ono, S. Matsuzaka, K. Morita, H. Sanada, Y. Ohno, and H. Ohno, "Multipulse operation and optical detection of nuclear spin coherence in a GaAs/AlGaAs quantum well," Physical Review Letters, vol. 101, 207601 (4 pages), November 2008. DOI:10.1103/PhysRevLett.101.207601
  288. D. Chiba, M. Sawicki, Y. Nishitani, Y. Nakatani, F. Matsukura, and H. Ohno, "Magnetization vector manipulation by electric fields," Nature, vol. 455, pp. 515-518, September 2008. DOI:10.1038/nature07318
  289. Y. Pu, D. Chiba, F. Matsukura, H. Ohno, and J. Shi, " Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors," Physical Review Letters, vol. 101, 117208 (4 pages), September 2008. DOI:10.1103/PhysRevLett.101.117208
  290. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, "Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature," Applied Physics Letters, vol. 93, 082508 (3 pages), August 2008. DOI:10.1063/1.2976435
  291. S. Matsunaga, J. Hayakawa, S. Ikeda, K. Miura, H. Hasegawa, T. Endoh, H. Ohno, and T. Hanyu, "Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions," Applied Physics Express, vol. 1, 091301 (3 pages), August 2008. DOI:10.1143/APEX.1.091301
  292. J. Hayakawa, S. Ikeda, K. Miura, M. Yamanouchi, Y. M. Lee, R. Sasaki, M. Ichimura, K. Ito, T. Kawahara, R. Takemura, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB-based synthetic ferrimagnetic free layers," IEEE Transactions on Magnetics, vol. 44, pp. 1962-1967, July 2008. DOI:10.1109/TMAG.2008.924545
  293. C. Gould, S. Mark, K. Pappert, R. G. Dengel, J. Wenisch, R. P. Campion, A. W. Rushforth, D. Chiba, Z. Li, X. Liu, W. Van Roy, H. Ohno, J. K. Furdyna, B. Gallagher, K. Brunner, G. Schmidt, and L. W. Molenkamp, "An extensive comparison of anisotropies in MBE grown (Ga, Mn)As material," New Journal of Physics, vol. 10, 055007 (10 pages), May 2008. DOI:10.1088/1367-2630/10/5/055007
  294. M. Belmoubarik, K. Ohtani, and H. Ohno, "Intersubband transitions in ZnO multiple quantum wells," Applied Physics Letters, vol. 92, 191906 (3 pages), May 2008. DOI:10.1063/1.2926673
  295. G. Ghosh, D. W. Steuerman, B. Maertz, K. Ohtani, Huaizhe Xu, H. Ohno, and D. D. Awschalom, "Electrical control of spin coherence in ZnO," Applied Physics Letters, vol. 92, 162109 (3 pages), April 2008. DOI:10.1063/1.2913049
  296. M. Czapkiewicz, P. Zagrajek, J. Wrobel, G. Grabecki, F. Fronc, T. Dietl, Y. Ohno, S. Matsuzaka, and H. Ohno, "0.7 anomaly and magnetotransport of disordered quantum wire," Europhysics Letters, vol. 82, 27003 (6 pages), April 2008. DOI:10.1209/0295-5075/82/27003
  297. O. B. Agafonov, T. Kita, H. Ohno, and R. J. Haug, "Fine structure in magnetospectrum of vertical quantum dot," Physica E, vol. 40, pp. 1630-1632, April 2008. DOI:10.1016/j.physe.2007.10.006
  298. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator," Physica E. vol. 40, pp. 1930-1932, April 2008. DOI:10.1016/j.physe.2007.08.140
  299. S. Marcet, T. Kita, K. Ohtani, and H. Ohno, "The effect of vertical electric fields on exciton fine structure of GaAs natural quantum dots," Physica E, vol. 40, pp. 2069-2071, April 2008. DOI:10.1016/j.physe.2007.09.106
  300. Y. Nishitani, D. Chiba, F. Matsukura, and H. Ohno, "Electrical Curie temperature modulation in (Ga, Mn)As field-effect transistors with Mn composition from 0.027 to 0.2," Journal of Applied Physics, vol. 103, 07D139 (3 pages), April 2008. DOI:10.1063/1.2838159
  301. D. Chiba, K. M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, and H. Ohno, "Properties of Ga1-xMnxAs with high x (>0.1)," Journal of Applied Physics, vol. 103, 07D136 (3 pages), April 2008. DOI:10.1063/1.2837469
  302. H. Ohno and T. Dietl, "Spin-transfer physics and the model of ferromagnetism in (Ga, Mn)As," Journal of Magnetism and Magnetic Materials, vol. 320, pp. 1293-1299, April 2008.  DOI:10.1016/j.jmmm.2007.12.016
  303. T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, J. A. Katine, M. J. Carey, P. Crozat, J. V. Kim, C. Chappert, and H. Ohno, "Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures," Journal of Applied Physics, vol. 103, 07A723 (6 pages), March 2008. DOI:10.1063/1.2839341
  304. T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, P. Crozat, N. Zerounian, Joo-Von Kim, C. Chappert, and H. Ohno, "Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: stochastic versus deterministic aspects," Physical Review Letters, vol. 100, 057206 (4 pages), February 2008. DOI:10.1103/PhysRevLett.100.057206
  305. T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "2 Mb SPRAM (SPin-Transfer Torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read," IEEE Journal of Solid-State Circuits, vol. 43, pp. 109-120, January 2008. DOI:10.1109/JSSC.2007.909751
  306. K. Ohtani, H. Ohnishi, and H. Ohno, "Simultaneous lasing of interband and intersubband transitions in InAs/AlSb quantum cascade laser structures," Applied Physics Letters, vol. 92, 041102 (3 pages), January 2008. DOI:10.1063/1.2838296

    2007
  307. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "A few-electron  vertical In0.56Ga0.44As quantum dot with an insulating gate,"  Applied Physics Letters, vol. 91,  232101 (3 pages), December 2007. (Top 20 most downloaded article(December 2007))  DOI:10.1063/1.2818712
  308. T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "2-Mb SPRAM design: bi-directional current write and parallelizing-direction current read based on spin-transfer torque switching," Physica Status Solidi A, vol. 204, pp. 3929-3933, December 2007. DOI:10.1002/pssa.200777120
  309. M. Yamanouchi, J. Ieda, F. Matsukura, S. E. Barnes, S. Maekawa, and H. Ohno, "Universality classes for domain wall motion in the ferromagnetic semiconductor (Ga, Mn)As," Science, vol. 317, pp. 1726-1729, September 2007. DOI:10.1126/science.1145516
  310. T. Jungwirth, Jairo Sinova, A. H. MacDonald, B. L. Gallagher, V. Novﾃ｡k, K. W. Edmonds, A. W. Rushforth, R. P. Campion, C. T. Foxon, L. Eaves, E. Olejnfk, J. Maﾅ｡ek, S. -R. Eric Yang, J. Wunderlich, C. Gould, L. W. Molenkamp, T. Dietl, and H. Ohno, "Character of states near the Fermi level in (Ga, Mn)As: Impurity to valence band crossover," Physical Review B, vol. 76, 125206 (9 pages), September 2007. DOI:10.1103/PhysRevB.76.125206
  311. M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, and H. Ohno, "Channel thickness dependence of the magnetic properties in (Ga, Mn)As FET structures," Journal of Superconductivity and Novel Magnetism,  vol. 20,  pp.  409-411, August 2007. DOI:10.1007/s10948-007-0242-7
  312. M. Fukuda, M. Yamanouchi, F. Matsukura, and H. Ohno, "Switching of tunnel magnetoresistance by domain wall motion in (Ga, Mn)As-based magnetic tunnel junctions,"  Applied Physics Letters, vol. 91, 052503 (3 pages), July 2007. DOI:10.1063/1.2767230
  313. K. Ohtani, Y. Moriyasu, H. Ohnishi, and H. Ohno, "Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12μ m," Applied Physics Letters, vol. 90, 261112 (3 pages), June 2007. DOI:10.1063/1.2752771
  314. Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno, "Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier,"  Applied Physics Letters, vol. 90,  212507 (3 pages), May 2007.  DOI:10.1063/1.2742576
  315. T. Dietl, H. Ohno, and F. Matsukura, "Ferromagnetic semiconductor heterostructures for spintronics," IEEE Transactions on Electron Devices, vol. 54, No. 5, pp. 945-954, May 2007. DOI:10.1109/TED.2007.894622
  316. S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, T. Hanyu, and H. Ohno, "Magnetic tunnel junctions for spintronic memories and beyond," IEEE Transactions on Electron Devices, vol. 54, No. 5, 991-1002 pages, May 2007. DOI:10.1109/TED.2007.894617
  317. K. Ohtani, K. Fujita, and H. Ohno, "Room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 ﾂｵm," Electronics Letters, vol. 43, pp. 520-522, April 2007. DOI:10.1049/el:20070251
  318. D. Chiba, Y. Nishitani, F. Matsukura, and H. Ohno, "Properties of Ga1-xMnxAs with high Mn composition (x>0.1)," Applied Physics Letters, vol. 90, 122503 (3 pages), March 2007. DOI:10.1063/1.2715095
  319. S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, and H. Ohno, "Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions," Journal of Magnetism and Magnetic Materials, vol. 310, pp. 1937-1939, March 2007. DOI:10.1016/j.jmmm.2006.10.770
  320. D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, and H. Ohno, "Domain wall resistance in perpendicularly magnetized (Ga, Mn)As," Journal of Magnetism and Magnetic Materials, vol. 310, pp. 2078-2083, March 2007. DOI:10.1016/j.jmmm.2006.10.1119
  321. A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, and M. Kawasaki, "Quantum Hall effect in polar oxide heterostructures," Science, vol. 315, pp. 1388-1391, March 2007. DOI:10.1126/science.1137430
  322. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "(In, Ga)As gated-vertical quantum dot with an Al2O3 insulator," Applied Physics Letters, vol. 90, 062102 (3 pages), February 2007. DOI:10.1063/1.2437060
  323. T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, "2 Mb spin-transfer torque RAM (SPRAM) with bit-by-bit bidirectional current write and parallelizing-direction current read," in digest of technical papers of 2007 IEEE International Solid-State Circuits Conference (ISSCC 2007), pp. 480-481, February 2007. DOI:10.1109/ISSCC.2007.373503
  324. H. -J. Lee, D. Chiba, F. Matsukura, and H. Ohno, "Effect of substrate temperature on the properties of heavily Mn-doped GaAs," Journal of Crystal Growth, vol. 301-302, pp. 264-267, January 2007. DOI:10.1016/j.jcrysgro.2006.11.155
  325. H. Ohno, "Physics and materials of spintronics in semiconductors," Physica Status Solidi (c), vol. 3, pp. 4057-4061, January 2007. DOI:10.1002/pssc.200672893
  326. T. Yamada, D. Chiba, F. Matsukura, S. Yakata, and H. Ohno, "Magnetic anisotropy in (Ga, Mn)As probed by magnetotransport measurements," Physica Status Solidi (c), vol. 3, pp. 4086-4089, January 2007. DOI:10.1002/pssc.200672877
  327. T. Kita, M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno, "Spin injection with three terminal device based on (Ga, Mn)As/n+-GaAs tunnel junction," Physica Status Solidi (c), vol. 3, pp. 4164-4167, January 2007. DOI:10.1002/pssc.200672865


    2006
  328. J. Hayakawa, S. Ikeda, Y. M. Lee, F. Matsukura, and H. Ohno, "Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions," Applied Physics Letters, vol. 89, 232510 (3 pages), December 2006. DOI:10.1063/1.2402904
  329. T. Dietl and H. Ohno, "Engineering magnetism in semiconductors," Materials Today, vol. 9, pp. 18-26, November 2006. DOI:10.1016/S1369-7021(06)71691-1
  330. D. Chiba, F. Matsukura, and H. Ohno, "Electric-field control of ferromagnetism in (Ga,Mn)As," Applied Physics Letters, vol. 89, 162505 (3 pages), October 2006. DOI:10.1063/1.2362971
  331. J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, and H. Ohno, "Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferromagnetic free layer," Japanese Journal of Applied Physics, vol. 45, pp. L1057-L1060, October 2006. DOI:10.1143/JJAP.45.L1057
  332. J. Mﾃｼller, Y. Li, S. von Molnár, Y. Ohno, and H. Ohno, "Single-electron switching in AlxGa1-xAs/GaAs Hall devices," Physical Review B, vol. 74, 125310 (7 pages), September 2006. DOI:10.1103/PhysRevB.74.125310
  333. H. Xu, K. Ohtani, M. Yamao, and H. Ohno, "Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy," Applied Physics Letters, vol. 89, 071918 (3 pages), August 2006. DOI:10.1063/1.2337541
  334. Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno, "Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer," Applied Physics Letters, vol. 89, 042506 (3 pages), July 2006. DOI:10.1063/1.2234720
  335. M. Kohda, T. Kita, Y. Ohno, F. Matsukura, and H. Ohno, "Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As/n+-GaAs Esaki diode," Applied Physics Letters, vol. 89, 012103 (3 pages), July 2006. DOI:10.1063/1.2219141
  336. D. Chiba, F. Matsukura, and H. Ohno, "Electrical magnetization reversal in ferromagnetic semiconductors," Journal of Physics D: Applied Physics, vol. 39, pp. R215-R225, June 2006. DOI:10.1088/0022-3727/39/13/R01. Physics
  337. M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno, "Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction," Physica E, vol. 32, pp. 438-441, May 2006. DOI:10.1016/j.physe.2005.12.085
  338. J. Mﾃｼller, S. von Molnár, Y. Ohno, and H. Ohno, "Decomposition of 1/f noise in AlxGa1-xAs/GaAs Hall devices," Physical Review Letters, vol. 96, 186601 (4 pages), May 2006. DOI:10.1103/PhysRevLett.96.186601
  339. M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno, "Current-assisted domain wall motion in ferromagnetic semiconductors," Japanese Journal of Applied Physics, vol. 45, pp. 3854-3859, May 2006. DOI: 10.1143/JJAP.45.3854
  340. T. Sakaguchi, H. Choi, S. J. Ahn, T. Sugimura, M. Park, M. Oogane, H. Oh, J. Hayakawa, S. Ikeda, Y. M. Lee, T. Fukushima, T. Miyazaki, H. Ohno, and M. Koyanagi, "Fabrication and evaluation of magnetic tunnel junction with MgO tunneling barrier," Japanese Journal of Applied Physics, vol. 45, pp. 3228-3232, April 2006. DOI: 10.1143/JJAP.45.3228
  341. S. Ikeda, J. Hayakawa, Y. M. Lee, T. Tanikawa, F. Matsukura, and H. Ohno, "Tunnel magnetoresistance in MgO-barrier magnetic tunnel junction with bcc-CoFe(B) and fcc-CoFe free layers," Journal of Applied Physics, vol. 99, pp. 08A907 (3 pages), April 2006. DOI:10.1063/1.2176588
  342. D. Chiba, T. Kita, F. Matsukura, and H. Ohno, "Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga, Mn)As magnetic tunnel junction," Journal of Applied Physics, vol. 99, 08G514 (3 pages), April 2006. DOI:10.1063/1.2170063
  343. H. Ohno, "Ferromagnetic semiconductors for spintronics," Physica B, vol. 376-377, pp. 19-21, April 2006. DOI:10.1016/j.physb.2005.12.007
  344. H. Xu, K. Ohtani, M. Yamao, and H. Ohno, "Control of ZnO(000-1)/Al2O3(11-20) surface morphologies using plasma-assisted molecular beam epitaxy," Physica Status Solidi (b), vol. 243, pp. 773-777, March 2006. DOI:10.1002/pssb.200564657
  345. D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, and H. Ohno, "Domain-wall resistance in ferromagnetic (Ga, Mn)As," Physical Review Letters, vol. 96, 096602 (4 pages), March 2006. DOI:10.1103/PhysRevLett.96.096602
  346. M. Yamanouchi, D. Chiba, F. Matsukura, T. Dietl, and H. Ohno, "Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga, Mn)As," Physical Review Letters, vol. 96, 096601 (4 pages), March 2006. DOI:10.1103/PhysRevLett.96.096601
  347. H. Sanada, Y. Kondo, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno, "Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells," Physical Review Letters, vol. 96, 067602 (4 pages), February 2006. DOI:10.1103/PhysRevLett.96.067602
  348. J. Nishii, A. Ohtomo, M. Ikeda, Y. Yamada, K. Ohtani, H. Ohno, and M. Kawasaki, "Synthesis and characterization of MgCaO films as a lattice and balence-matched gate dielectric for ZnO based fields effect transistor," Applied Surface Science, vol. 252, pp. 2507-2511, January 2006. DOI:10.1016/j.apsusc.2005.06.040


    2005
  349. S. Ikeda, J. Hayakawa, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, and H. Ohno, "Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering," Japanese Journal of Applied Physics, vol. 44, pp. L1422-L1445, November 2005. DOI:10.1143/JJAP.44.L1442
  350. K. Ohtani, K. Fujita, and H. Ohno, "Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers," Applied Physics Letters, vol. 87, 211113 (3 pages), November 2005. DOI:10.1063/1.2136428
  351. K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno, and H. Ohno, "Strong anisotropic spin dynamics in narrow n-InGaAs/AlGaAs (110) quantum wells," Applied Physics Letters, vol. 87, 171905 (3 pages), October 2005. DOI:10.1063/1.2112193
  352. C. Y. Hu, K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno, "Spin precession of holes in Wurtzite GaN studied using time-resolved Kerr rotation technique," Physical Review B, vol. 72, 121203 (4 pages), September 2005. DOI:10.1103/PhysRevB.72.121203
  353. J. Nishii, A. Ohtomo, K. Ohtani, H. Ohno and M. Kawasaki, "High-mobility field-effect transistors based on single-crystalline ZnO channels," Japanese Journal of Applied Physics, vol. 44, pp. L1193-L1195, September 2005. DOI: 10.1143/JJAP.44.L1193
  354. J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, H. Ohno, "Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions," Japanese Journal of Applied Physics, vol. 44, pp. L1267-L1270, September 2005. DOI: 10.1143/JJAP.44.L1267
  355. J. Inoue and H. Ohno, "Taking the Hall effect for a spin," Science, vol. 309, pp. 2004-2005, September 2005. DOI:10.1126/science.1113956
  356. G. Mihajlovic, P. Xiong, S. von Molánr, K. Ohtani, H. Ohno, M. Field, and G. J. Sullivan, "Detection of single magnetic bead for biological applications using an InAs quantum-well micro-Hall sensor," Applied Physics Letters, vol. 87, 112502 (3 pages), September 2005. DOI:10.1063/1.2043238
  357. Y. Sato, D. Chiba, F. Matsukura, and H. Ohno, "Effect of GaAs intermediary layer thickness on the properties of (Ga,Mn)As tri-layer structures," Journal of Superconductivity: Incorporating Novel Magnetism, vol. 18, pp. 345-347, June 2005. DOI:10.1007/s10948-005-0008-z
  358. Y. Li, P. Xiong, S. von Molnár, Y. Ohno, and H. Ohno, "Magnetization reversal in elongated Fe nanoparticles," Physical Review B, vol. 71, 214425 (6 pages), June 2005. DOI:10.1103/PhysRevB.71.214425
  359. J. Hayakawa, H. takahashi, K. Ito, M. Fujimori, S. Heike, T. Hashizume, M. Ichimura, S. Ikeda, and H. Ohno, "Current-driven magnetization reversal in exchange-biased spin-valve nanopillars," Journal of Applied Physics, vol. 97, pp. 114321-114323, June 2005. DOI:10.1063/1.1927707

  360. A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu and M. Kawasaki, "Blue light-emitting diode based on ZnO," Japanese Journal of Applied Physics, vol. 44, pp. L643-L645, May 2005. DOI:10.1143/JJAP.44.L643
  361. K. Ohtani, K. Fujita, and H. Ohno, "InAs quantum cascade lasers based on coupled quantum well structures," Japanese Journal of Applied Physics, vol. 44, pp. 2572-2574, April 2005. DOI:10.1143/JJAP.44.2572
  362. J. Müller, Y. Li, S. von Molnár, Y. Ohno, and H. Ohno, "Low-frequency noise in submicron GaAs/AlxGa1-xAs Hall devices," Journal of Magnetism and Magnetic Materials, vol. 290-291, pp. 1161-1164, April 2005. DOI:10.1016/j.jmmm.2004.11.502
  363. J. Hayakawa, S. Ikeda, F. Matsukura, H. Takahashi, and H. Ohno, "Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature," Japanese Journal of Applied Physics, vol.44, pp. L587-L589, April 2005. DOI: 10.1143/JJAP.44.L587
  364. H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno, "Gate control of dynamic nuclear polarization in GaAs quantum wells," Physical Review Letters vol. 94, 097601 (4 pages), March 2005. DOI:10.1103/PhysRevLett.94.097601

    2004

  365. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, "Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO," Nature Materials, vol. 4, pp. 42-46, December 2004. DOI:10.1038/nmat1284
  366. Y. Li, C. Ren, P. Xiong, S. von Molánr, Y. Ohno, and H. Ohno, "Modulation of noise in submicron GaAs/AlGaAs Hall devices by gating," Physical Review Letters, vol. 93, 246602 (4 pages), December 2004. DOI:10.1103/PhysRevLett.93.246602
  367. D. Chiba, Y. Sato, T. Kita, F. Matsukura, and H. Ohno "Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction," Physical Review Letters, vol. 93, 216602 (4 pages), November 2004. DOI:10.1103/PhysRevLett.93.216602
  368. D. Chiba, M. Yamanouchi, F. Matsukura, and H. Ohno, "Control of magnetization reversal in ferromagnetic semiconductors by electrical means," Journal of Physics: Condensed Matter, vol. 16, pp. S5693-S5696, November 2004. DOI:10.1088/0953-8984/16/48/029
  369. I. Suzuki, A. Ohtomo, A. Tsukazaki, F. Sato, J. Nishii, H. Ohno, and M. Kawasaki, "Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO4 heterointerface," Advanced Materials, vol. 16, pp. 1887-1890, November 2004. DOI:10.1002/adma.200401018
  370. J. Hayakawa, K. Ito, M. Fujimori, S. Heike, T. Hashizume, J. Steen, J. Brugger and H. Ohno, "Current-driven switching of exchange biased spin-valve giant magnetoresistive naopillars using a conducting nanoprobe," Journal of Applied Physics, vol. 96, pp. 3440-3442, September 2004. DOI:10.1063/1.1769605
  371. E. Abe, K. Sato, F. Matsukura, J. H. Zhao, Y. Ohno and H. Ohno, "Molecular beam epitaxy and properties of Cr-doped GaSb," Journal of Superconductivity, vol. 17, pp. 349-352, June 2004. DOI:10.1023/B:JOSC.0000034257.19841.be
  372. K. Ohtani, K. Fujita and H. Ohno,"A low threshold current density InAs/AlGaSb superlattice quantum cascade laser operating at 14 ﾂｵm," Japanese Journal of Applied Physics,  vol. 43, pp. L879-L881, June 2004. DOI:10.1143/JJAP.43.L879
  373. H. Ohno, "Ferromagnetic semiconductor heterostructures," Journal of Magnetism and Magnetic Materials, vol. 272-276, pp. 1-6, May 2004. DOI:10.1016/j.jmmm.2003.12.961
  374. J. Hayakawa, M. Fujimoria, S. Heikea, M. Ishibashia, T. Hashizumea, K. Ito and H. Ohno, "Electrical properties of the patterned Co/Cu/Co sub-micron dots using a probe contact," Journal of Magnetism and Magnetic Materials, vol. 272-276, pp. E1443-E1445, May 2004. DOI:10.1016/j.jmmm.2003.12.730
  375. M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno, "Current-induced domain-wall switching in a ferromagnetic semiconductor structure," Nature, vol. 428, pp. 539-542, April 2004. DOI:10.1038/nature02441
  376. F. Matsukura, M. Sawicki, T. Dietl, D. Chiba and H.Ohno, "Magnetotransport properties of metallic (Ga, Mn)As films with compressive and tensile strain," Physica E, vol. 21, pp. 1032-1036, March 2004. DOI:10.1016/j.physe.2003.11.165
  377. K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno and H. Ohno, "Electron spin dynamics in InGaAs quantum wells," Physica E, vol. 21, pp. 1007-1011, March 2004. DOI:10.1016/j.physe.2003.11.160
  378. D. Chiba, F. Matsukura, H. Ohno, "Tunneling magnetoresistance in (Ga, Mn)As-based heterostructures with a GaAs barrier," Physica E, vol. 21, pp. 966-969, March 2004. DOI:10.1016/j.physe.2003.11.172
  379. F. M. Hossain, J. Nishii, S. Takagi, T. Sugihara, A. Ohtomo, T. Fukumura, H. Koinuma, H. Ohno and M. Kawasaki, "Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors," Physica E. vol. 21, pp. 911-915, March 2004. DOI:10.1016/j.physe.2003.11.149


    2003
  380. J. H. Zhao, F. Matsukura, K. Takamura, D. Chiba, Y. Ohno, K. Ohtani, H. Ohno, "Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism," Materials Science in Semiconductor Processing, vol. 6, pp. 507-509, October-December 2003. DOI:10.1016/j.mssp.2003.07.008
  381. H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno and H. Ohno, "Hysteretic dynamic nuclear polarization in GaAs/AlxGa1-xAs(110) quantum wells," Physical Review B, vol. 68, 241303 (4 pages), December 2003. DOI:10.1103/PhysRevB.68.241303
  382. D. Chiba, M. Yamanouchi, F. Matsukura and H. Ohno, "Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor," Science, vol. 301, pp. 943-945, August 2003. DOI:10.1126/science.1086608
  383. Y. Li, P. Xiong, S. von Molnár, Y. Ohno and H. Ohno, "Magnetization reversal of Iron nanoparticles studied by submicron Hall magnetometry," Journal of Applied Physics, vol. 93, pp. 7912-7914, May 2003. DOI:10.1063/1.1557827
  384. D. Chiba, K. Takamura, F. Matsukura and H.Ohno, "Effect of low-temperature annealing on (Ga, Mn)As trilayer structures," Applied Physics Letters, vol. 82, pp. 3020-3022, May 2003. DOI:10.1063/1.1571666
  385. J. Nishii, F.M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H.Ohno and M. Kawasaki, "High mobility thin film transistors with transparent ZnO channels," Japanese Journal of Applied Physics, vol. 42, pp. L347-L349, April 2003. DOI:10.1143/JJAP.42.L347
  386. H. Ohno, "Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors," Journal of Crystal Growth, vol. 251, pp. 285-291, April 2003. DOI:10.1016/S0022-0248(02)02290-X
  387. K. Ohtani, H. Sakuma, H. Ohno, "InAs-based quantum cascade light emitting structures containing a double plasmon waveguide," Journal of Crystal Growth, vol. 251, pp. 718-722, April 2003. DOI:10.1016/S0022-0248(02)02314-X
  388. M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno, "Electrical electron spin injection with a p+-(Ga, Mn)As/n+-GaAs tunnel junction," Journal of Superconductivity, vol. 16, pp. 167-170, February 2003. DOI:10.1023/A:1023282012059
  389. H. Sanada, I. Arata, Y. Ohno, K. Ohtani, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, H. Ohno, "Drift transport of spin-polarized electrons in GaAs," Journal of Superconductivity, vol. 16, pp. 217-219, February 2003. DOI:10.1023/A:1023206817511
  390. D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani, H. Ohno, "Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In, Mn)As and (Al, Ga, Mn)As," Journal of Superconductivity, vol. 16, pp. 179-182, February 2003. DOI:10.1023/A:1023238229806
  391. K. Ohtani and H. Ohno, "InAs/AlSb quantum cascade lasers operating at 10 ﾂｵm;, Applied Physics Letters, vol. 82, pp. 1003-1005, February 2003. DOI:10.1063/1.1545151
  392. F. Matsukura, D. Chiba, Y. Ohno, T. Dietl, H. Ohno, "Spin degree of freedom in ferromagnetic semiconductor heterostructures," Physica E, vol. 16, pp. 104-110, January 2003. DOI:10.1016/S1386-9477(02)00596-9
  393. K. Ohtani, N. Matsumoto, H. Sakuma and H. Ohno, "Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures," Applied Physics Letters, vol. 82, pp. 37-39, January 2003. DOI:10.1063/1.1534939

    2002
  394. K. Ohtani and H. Ohno, "An InAs-based intersubband quantum cascade laser," Japanese Journal of Applied Physics, vol. 41, pp. L1279-L1280, November 2002. DOI:10.1143/JJAP.41.L1279
  395. T. Tsuruoka, N. Tachikawa, S. Ushioda , F. Matsukura, K. Takamura, and H. Ohno, "Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy," Applied Physics Letters, vol. 81, pp. 2800-2802, October 2002. DOI:10.1063/1.1512953
  396. H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, and H. Ohno, "Relaxation of photoinjected spins during drift transport in GaAs," Applied Physics Letters, vol. 81, pp. 2788-2790, October 2002. DOI:10.1063/1.1512818
  397. F. Matsukura, H. Ohno. and T. Dietl, "III-V ferromagnetic semiconductors," Handbook of Magnetic Materials, vol. 14, pp. 1-87, October 2002. Handbook of Magnetic Materials (pdf, 1.1Mb)
  398. K. Takamura, F. Matsukura, D. Chiba, and H. Ohno, "Magnetic properties of (Al, Ga, Mn)As," Applied Physics Letters, vol. 81, pp. 2590-2592, September 2002. DOI:10.1063/1.1511540
  399. T. Dietl, F. Matsukura, and H. Ohno, "Ferromagnetism of magnetic semiconductors : Zhang-Rice limit," Physical Review B, 66, 033203 (4 pages), July 2002. DOI:10.1103/PhysRevB.66.033203
  400. H. Ohno, "Ferromagnetic semiconductors for spin electronics," Journal of Magnetism and Magnetic Materials, vol. 242, pp. 105-107, April 2002. DOI:10.1016/S0304-8853(01)01210-0
  401. H. Akinaga and H. Ohno, "Semiconductor Spintronics," IEEE Transactions on Nanotechnology, vol. 1, pp. 19-31, March 2002. DOI:10.1109/TNANO.2002.1005423
  402. Y. Li, P. Xiong, S.von Molánr, S. Wirth, Y. Ohno, and H. Ohno, "Hall magnetometry on a single iron nanoparticle," Applied Physics Letters, vol. 80, pp. 4644-4646, June 2002. DOI:10.1063/1.1487921
  403. J.H. Zhao, F. Matsukura, E. Abe, D. Chiba, Y. Ohno, K. Takamura, and H. Ohno, "Growth and properties of (Ga, Mn)As on Si (100) substrate," Journal of Crystal Growth, vol. 237-239, pp. 1349-1352, April 2002. DOI:10.1016/S0022-0248(01)02181-9
  404. Y. Ohno, I. Arata, F. Matsukura, and H. Ohno, "Valence band barrier at (Ga, Mn)As/GaAs interfaces," Physica E, vol. 13, pp. 521-524, March 2002. DOI:10.1016/S1386-9477(02)00185-6
  405. D. K. Young, E. Johnston-Halperin, D.D. Awschalom, Y. Ohno, and H. Ohno, "Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures," Applied Physics Letters, vol. 80, pp. 1598-1600, March 2002. DOI:10.1063/1.1458535
  406. F. Matsukura, D. Chiba, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, and H. Ohno, "Control of ferromagnetism in field-effect transistor of a magnetic semiconductor," Physica E, vol. 12, pp. 351-355, January 2002. DOI:10.1016/S1386-9477(01)00275-2
  407. H. Ohno, F. Matsukura, and Y. Ohno, "Semiconductor spin electronics (Invited)," JSAP International, No. 5, January 2002.
  408. T. Tsuruoka, R. Tanimoto, N. Tachikawa, S. Ushioda, F. Matsukura, and H. Ohno, "Microscopic identification of dopant atoms in Mn-doped GaAs layers," Solid State Communications, vol. 121, pp. 79-82,  January 2002. DOI:10.1016/S0038-1098(01)00471-9


    2001

  409. M. Kohda, Y.Ohno, K. Takamura, F. Matsukura, and H. Ohno, "A spin Esaki diode," Japanese Journal of Applied Physics, vol. 40, pp. L1274-L1276, December 2001. DOI:10.1143/JJAP.40.L1274
  410. Y. Nagai, T. Kunimoto, K. Nagasaka, H. Nojiri, M. Motokawa, F. Matsukura, T. Dietl, and H. Ohno, "Spin Polarization Dependent Far Infrared Absorption in Ga1-xMnxAs," Japanese Journal of  Applied Physics, vol. 40, pp. 6231-6234, November 2001. DOI:10.1143/JJAP.40.6231
  411. G. Salis, D. D. Awschalom, Y. Ohno, and H. Ohno, "Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells," Physical Review B, vol. 64, 195304 (10 pages), October 2001. DOI:10.1103/PhysRevB.64.195304
  412. J. H. Zhao, F. Matsukura, K. Takamura, E. Abe, D. Chiba, and H. Ohno, "Room-temperature ferromagnetism in zincblende CrSb grown by molecular beam epitaxy," Applied Physics Letters, vol. 79, pp. 2776-2779, October 2001. DOI:10.1063/1.1413732

  413. H. Ohno, F. Matsukura, and Y. Ohno, "Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures (Invited)," Solid State Communications, vol. 119, pp. 281-289, July 2001. DOI:10.1016/S0038-1098(01)00175-2
  414. H. Ohno, F. Matsukura, and Y. Ohno, "Spin-Dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures(Invited)," Materials Science and Engineering B, vol. 84, pp. 70-74, July 2001. DOI:10.1016/S0921-5107(01)00572-4
  415. K. Ohtani, H. Sakuma, and H. Ohno, "Emission wavelength control by potential notch in type-II InAs/GaSb/AlSb intersubband light-emitting structures," Applied Physics Letters, vol. 78, pp. 4148-4150, June 2001. DOI:10.1063/1.1381034
  416. K. Takamura, F. Matsukura, Y. Ohno, and H. Ohno, "Growth and properties of (Ga,Mn)As films with high Mn concentration," Journal of Applied Physics, vol. 89, pp. 7024-7026, June 2001. DOI:10.1063/1.1357841
  417. Steven K. H. Sim, H. C. Liu, A. Shen, M. Gao, Kevin F. Lee, M. Buchanan, Y. Ohno, H. Ohno, and E. H. Li, "Effect of barrier width on the performance of quantum well infrared photodetector," Infrared Physics & Technology, vol. 42, pp. 115-121, June 2001. DOI:10.1016/S1350-4495(01)00067-6
  418. H. C. Liu, C. Y. Song, A. Shen, M. Gao, E. Dupont, P. J. Poole, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, Y. Ohno, and H. Ohno, "Dual-band photodetectors based on interband and intersubband transitions," Infrared Physics & Technology, vol. 42, pp. 163-170, June 2001. DOI:10.1016/S1350-4495(01)00072-X
  419. T. Adachi, Y. Ohno, F. Matsukura, and H. Ohno, "Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells," Physica E, vol. 10, pp. 36-39, May 2001. DOI:10.1016/S1386-9477(01)00049-2
  420. T. Fukumura, T. Shono, K. Inaba, T. Hasegawa, H. Koinuma, F. Matsukura, and H. Ohno, "Magnetic domain structure of a ferromagnetic semiconductor (Ga, Mn)As observed with scanning probe microscopes," Physica E, vol. 10, pp. 135-138, May 2001. DOI:10.1016/S1386-9477(01)00068-6
  421. T. Omiya, F. Matsukura, A. Shen, Y. Ohno, and H. Ohno, "Magnetotransport properties of (Ga, Mn)As grown on GaAs (411) A substrates," Physica E, vol. 10, pp. 206-209, May 2001. DOI:10.1016/S1386-9477(01)00083-2
  422. S. Ueda, S. Imada, T. Muro, Y. Saitoh, S. Suga, F. Matsukura, and H. Ohno, "Magnetic circular dichroism in Mn 2p core absorption of Ga1-xMnxAs," Physica E, vol. 10, pp. 210-214, May 2001. DOI:10.1016/S1386-9477(01)00084-4
  423. D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno,"Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures," Physica E, vol. 10, pp. 278-282, May 2001. DOI:10.1016/S1386-9477(01)00100-X
  424. I. Arata, Y. Ohno, F. Matsukura, and H. Ohno, "Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions," Physica E, vol. 10, pp.288-291, May 2001. DOI:10.1016/S1386-9477(01)00101-1
  425. Y. Ohno, I. Arata, F. Matsukura, H. Ohno, D. K. Young, B. Beschoten, and D. D. Awschalom, "Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructure," Physica E, vol. 10, pp.489-492, May 2001. DOI:10.1016/S1386-9477(01)00143-6
  426. T. Dietl , H. Ohno, and F. Matsukura , "Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors," Physical Review B, vol. 63, 195205 (21 pages), May 2001. DOI:10.1103/PhysRevB.63.195205
  427. G. Salis, D.T. Fuchs, J. M. Nikkawa, D. D. Awschalom, Y. Ohno, and H. Ohno, "Optical manipulation of nuclear spin by a two-dimensional electron gas," Physical Review Letters, vol. 86, pp. 2677-2680, March 2001. DOI:10.1103/PhysRevLett.86.2677
  428. H. Ohno and F. Matsukura, "A ferromagnetic III-V semiconductor: (Ga, Mn)As," Solid State Communications, vol. 117, pp. 179-186, January 2001. DOI:10.1016/S0038-1098(00)00436-1
  429. H. Ofuchi, T. Kubo, M. Tabuchi, Y. Takeda, F. Matsukura, S. P. Guo, A. Shen, and H. Ohno, "Fluorescence extended x-ray absorption fine structure study on local structures around Mn-atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots," Journal of Applied Physics, vol. 89, pp. 66-70, January 2001.  DOI:10.1063/1.1330761
  430. T. Dietl and H. Ohno, "Ferromagnetism in III-V and II- VI semiconductor structures," Physica E, vol. 9, pp. 185-193, January 2001. DOI:10.1016/S1386-9477(00)00193-4


    2000

  431. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, "Electric-field control of ferromagnetism," Nature, vol. 408, pp. 944-946, December 2000. DOI:10.1038/35050040

  432. J. Yang, H. Yasuda, S. Wang, F. Matsukura, Y. Ohno, and H. Ohno,"Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy," Applied Surface Science, vol. 166, pp. 242-246, October 2000. DOI:10.1016/S0169-4332(00)00429-3

  433. H. Yasuda, F. Matsukura, Y. Ohno, and H. Ohno, "Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface," Applied Surface Science, vol. 166, pp. 413-417, October 2000. DOI:10.1016/S0169-4332(00)00458-X

  434. D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno, "Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures," Applied Physics Letters, vol. 77, pp. 1873-1875, September 2000. DOI:10.1063/1.1310626

  435. T. Shono, T. Hasegawa, T. Fukumura, F. Matsukura, and H. Ohno, "Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope," Applied Physics Letters,  vol. 77, pp. 1363-1365, August 2000. DOI:10.1063/1.1290273

  436. H. Ohno, "Ferromagnetic III-V heterostructures," Journal of Vacuum Science & Technology B, vol. 18, pp. 2039-2043, July/August 2000. DOI:10.1116/1.1305944

  437. T. Shono, T. Fukumura, M. Kawasaki, H. Koinuma, T. Hasegawa, T. Endo, K. Kitazawa, F. Matsukura, and H. Ohno, "Magnetic domain structures of (Ga,Mn)As investigated by scaning Hall probe microscopy," Physica B, vol. 284, pp. 1171-1172, July 2000. DOI:10.1016/S0921-4526(99)02585-5

  438. Y. Ohno, I. Arata, F. Matsukura, K. Ohtani, S. Wang and H. Ohno, "MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor; pn junctions based on (Ga,Mn)As," Applied Surface Science, vol. 159-160, pp. 308-312, June 2000. DOI:10.1016/S0169-4332(00)00107-0

  439. F. Matsukura, E. Abe, Y. Ohno, and H. Ohno, "Molecular beam epitaxy of GaSb with high concentration of Mn," Applied Surface Science, vol. 159-160, pp. 265-269, June 2000. DOI:10.1016/S0169-4332(00)00108-2

  440. K. Ohtani, A. Sato, Y. Ohno, F. Matsukura, and H. Ohno, "Influence of interface bond and buffer material on the optical properties of InAs/AlSb quantum wells grown on GaAs substrates," Applied Surface Science, vol. 159-160, pp. 313-317, June 2000. DOI:10.1016/S0169-4332(00)00106-9

  441. H. Ohldag, V. Solinus, F. U. Hillebrecht, J. B. Goedkoop, M. Finazzi, F. Matsukura, and H. Ohno, "Magnetic moment of Mn in the ferromagnetic semiconductor Ga0.98Mn0.02As," Applied Physics Letters, vol. 76, pp. 2928-2930, May 2000. DOI:10.1063/1.126519

  442. T. Adachi, Y. Ohno, R. Terauchi, F. Matsukura, and H. Ohno, "Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells," Physica E, vol. 7, pp. 1015-1019, May 2000. DOI:10.1016/S1386-9477(00)00107-7

  443. T. Omiya, F. Matsukura, T. Dietl, Y. Ohno, T. Sakon, M. Motokawa, and H. Ohno, "Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field," Physica E, vol. 7, pp. 976-980, May 2000. DOI:10.1016/S1386-9477(00)00099-0

  444. E. Abe, F. Matsukura, H. Yasuda, Y. Ohno, and H. Ohno, "Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb," Physica E, vol. 7, pp. 981-985, May 2000.  DOI:10.1016/S1386-9477(00)00100-4

  445. T. Dietl, J. Chbert, P. Kossacki, D. Ferrand, S. Tatarenko, A. Waisiela, Y. Merle D'aubigne, F. Matsukura, N. Akiba, and H. Ohno, "Ferromagnetizm induced by free carriers in p-type structures of diluted magnetic semiconductors," Physica E, vol. 7, pp. 967-975, May 2000. DOI:10.1016/S1386-9477(00)00098-9

  446. T. Wang, J. Bai, S. Sakai, Y. Ohno, and H. Ohno "Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time," Applied Physics Letters, vol. 76, pp. 2737-2739, May 2000. DOI:10.1063/1.126460

  447. F. Matsukura, E. Abe, and H. Ohno, "Magnetotransport properties of (Ga, Mn)Sb," Journal of Applied Physics, vol. 87, pp. 6442-6444, May 2000. DOI:10.1063/1.372732

  448. N. Akiba, D. Chiba, K. Nakata, F. Matsukura, Y. Ohno, and H. Ohno, "Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures," Journal of Applied Physics, vol. 87, pp. 6436-6438, May 2000. DOI:10.1063/1.372730

  449. K. Ohtani and H. Ohno, "Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structure," Physica E, vol. 7, pp. 80-83, April 2000. DOI:10.1016/S1386-9477(99)00282-9
  450. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, "Zener model description of ferromagnetism in zinc-blende magnetic semiconductors," Science, vol. 287, pp. 1019-1022, February 2000. DOI:10.1126/science.287.5455.1019

  451. H. Ohno, "Ferromagnetism and heterostructures of III-V magnetic semiconductors," Physica E, vol. 6, pp. 702-708, February 2000. DOI:10.1016/S1386-9477(99)00177-0

  452. Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, "Electron spin relaxation beyond D'yakonov-Perel' interaction in GaAs/AlGaAs quantum wells," Physica E, vol 6, pp. 817-820, February 2000. DOI:10.1016/S1386-9477(99)00251-9

  453. S. P. Guo, A. Shen, H. Yasuda, Y. Ohno, F. Matsukura, and H. Ohno, "Surfactant effect of Mn on the formation of self-organized InAs nanostructures," Journal of Crystal Growth, vol. 208, pp. 799-803, January 2000. DOI:10.1016/S0022-0248(99)00465-0

  454. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, N. Kumada, Y. Ohno, S. Kishimoto, F. Matsukura, and S. Nagahama, "Bilayer v=2 quantum Hall state in parallel high magnetic field," Physica E, vol. 6, pp. 615-618, February 2000. DOI:10.1016/S1386-9477(99)00129-0



    1999

  455. J. G. E. Harris, D. D. Awshalom,, F. Matsukura, H. Ohno, K. D. Maranowski, and A. C. Gossard, "Integrated micromechanical cantilever megnetometry of Ga1-xMnxAs," Applied Physics Letters,  vol. 75, pp. 1140-1142, August 1999. DOI:10.1063/1.124622

  456. B. Beschoten, P. A. Cowell, I. Malajovich, D. D. Awschalom, F. Matsukura, A. Shen, and H. Ohno, "Magnetic circular dichroism studies of carrier-induced ferromagnetism in Ga1-xMnxAs," Physical Review Letters, vol. 83, pp. 3073-3076, October 1999. DOI:10.1103/PhysRevLett.83.3073

  457. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, "Electrical spin injection in a ferromagentic semiconductor heterostructures," Nature, vol. 402, pp. 790-792, December 1999. DOI:10.1038/45509

  458. Y. Ohno, R. Terachi, T. Adachi, F. Matsukura, and H. Ohno, "Spin relaxation in GaAs (110) quantum wells," Physical Review Letters, vol. 83, pp. 4196-4199, November 1999.DOI:10.1103/PhysRevLett.83.4196

  459. H. Ohno, "Properties of ferromagnetic III-V semiconductors," Journal of Magnetism and Magnetic Materials, vol. 200, pp. 110-129, October 1999. DOI:10.1016/S0304-8853(99)00444-8

  460. Y. Iye, A. Oiwa , A. Endo, S. Katsumoto, F. Matsukura, A. Shen, H. Ohno, and H. Munekata, "Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors," Materials Science and Engineering B, vol. 63, pp. 88-95, August 1999. DOI:10.1016/S0921-5107(99)00057-4

  461. H. Ohno, "Ferromagnetic III-V semiconductors and their heterostrucures," Proceedings of the 24th International Conference on the Physics of Semiconductors (Jerusalem, Israel, 2 窶・7 August 1998, Ed. by D. Gershoni, World Scientific, Singapore), pp. 139-146.

  462. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, A. Urayama, Y. Ohno, S. Kishimoto, F. Matsukura, and N. Kumada, "Interlayer coherence in v = 1 and v = 2 bilayer quantum Hall states," Physical Review B, vol. 59, pp. 14888-14891, June 1999. DOI:10.1103/PhysRevB.59.14888

  463. K. Ohtani and H. Ohno, "Intersubband electroluminescence in InAs/GaSb/AlSb type II cascade structures," Applied Physics Letters, vol. 74, pp. 1409-1411, March 1999. DOI:10.1063/1.123566

  464. T. Wang , Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai, and H. Ohno, "Electron mobility exceeding 104 cm2/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate," Applied Physics Letters, vol. 74, pp. 3531-3533, June 1999. DOI:10.1063/1.124151

  465. H. Yasuda and H. Ohno, "Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth," Applied Physics Letters,  vol. 74, pp. 3275-3277, May 1999. DOI:10.1063/1.123318

  466. K. Ohtani and H. Ohno, "Mid-infrared intersubband electroluminescence in InAs/AlSb cascade structures," Electronics Letters, vol. 35, pp. 935-936, May 1999. DOI:10.1049/el:19990624

  467. J. Szczytko, W. Mac, A. Twardowski, F. Matsukura, and H. Ohno, "Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers," Physical Review B, vol. 59, pp. 12935-12939, May 1999. DOI:10.1103/PhysRevB.59.12935
  468. A. Shen, F. Matsukura, S.P. Guo, Y. Sugawara, H. Ohno, M. Tani, H. Abe, and H. C. Liu, "Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As," Journal of Crystal Growth, vol. 201-202, pp. 679-683, May 1999. DOI:10.1016/S0022-0248(98)01447-X

  469. S. P. Guo, A. Shen, F. Matsukura, Y. Ohno, and H. Ohno, "InAs and (In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrates," Journal of Crystal Growth, vol. 201-202, pp. 684-688, May 1999. DOI:10.1016/S0022-0248(98)01442-0

  470. A. Sato, K. Ohtani, R. Terauchi, Y. Ohno, F. Matsukura, and H. Ohno, "X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy," Journal of Crystal Growth, vol. 201-202, pp. 861-863, May 1999. DOI:10.1016/S0022-0248(98)01475-4

  471. H. Ohno, F. Matsukura, T. Omiya, and N. Akiba, "Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As," Journal of Applied Physics,  vol. 85, pp. 4277-4282, April 1999. DOI:10.1063/1.370343

  472. R. Terauchi, Y. Ohno, T. Atachi, A. Sato, F. Matsukura, A. Tackeuchi, and H. Ohno, "Carrier mobility dependence of electron spin relaxation in GaAs quantum wells," Japanese Journal of Applied Physics, vol. 38, pp. 2549-2551, April 1999. DOI:10.1143/JJAP.38.2549

  473. A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno, and H. Munekata, "Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb," Physical Review B, vol. 59, pp. 5826-5831, February 1999. DOI:10.1103/PhysRevB.59.5826
  474. H. Ohno, "III-V based ferromagnetic semiconductors," Journal of Magnetics Society of Japan, vol. 23, pp. 88-92, 1999. DOI:10.3379/jmsjmag.23.88

  475. F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye and H. Ohno, "Magnetotransport properties of (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures," Journal of Magnetics Society of Japan, vol. 23, pp. 99-101, 1999. DOI:10.3379/jmsjmag.23.99



    1998

  476. S. Kishimoto, Y. Ohno, F. Matsukura, and H. Ohno, "Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime," Physica B, vol. 256-258, pp. 535-539, December 1998. DOI:10.1016/S0921-4526(98)00674-7

  477. N. Akiba, F. Matsukura, Y. Ohno, A. Shen, K. Ohtani, T. Sakon, M. Motokawa, and H. Ohno, "Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga, Mn)As," Physica B, vol. 256-258, pp. 561-564, December 1998. DOI:10.1016/S0921-4526(98)00490-6

  478. Y. H. Matsuda, H. Arimoto, N. Miura, A. Twardowski, H. Ohno, A. Shen, and F. Matsukura, "Cyclotron resonance in Cd1-xFexS and Ga1-xMnxAs at megagauss magnetic fields," Physica B, vol. 256-258, pp. 565-568, December 1998. DOI:10.1016/S0921-4526(98)00673-5

  479. H. Nojiri, M. Motokawa, S. Takeyama, F. Matsukura, and H. Ohno, "ESR study of Mn doped II-VI and III-V DMS," Physica B, vol. 256-258, pp. 569-572, December 1998. DOI:10.1016/S0921-4526(98)00504-3

  480. F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, and H. Ohno, "Magnetotransport properties of all semiconductor (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As tri-layer structures," Physica B, vol. 256-258, pp. 573-576, December 1998. DOI:10.1016/S0921-4526(98)00495-5

  481. F. Matsukura, A. Shen, Y. Sugawara, T. Omiya, Y. Ohno, and H. Ohno, "Properties of (Ga,Mn)As and their dependence on molecular beam growth conditions," Proceedings of the 25th International Symposium on Compound Semiconductors held in Nara (Nara, Japan, October 12-16, 1998, Eds. H Sakaki, J.C. Woo, N. Yokoyama, Y Harayama, CRC Press), pp. 547-552.

  482. N. Akiba, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, A. Oiwa, S. Katsumoto, and Y. Iye "Interlayer exchange in (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures," Applied Physics Letters, vol. 73, pp. 2122-2124, October 1998. DOI:10.1063/1.122398

  483. T. Tsuruoka, Y. Oshizumi, S. Ushioda, Y. Ohno, and H. Ohno, "Light emision spectra of AsGaAs/GaAs multiquantum wells induced by scanning tunneling microscope," Applied Physics Letters, vol. 73, pp. 1544-1546, September 1998. DOI:10.1063/1.122200

  484. H. Ohno, "Making nonmagnetic semiconductor magnetic," Science, vol. 281, pp. 951-956, August 1998. DOI:10.1126/science.281.5379.951

  485. H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, "Spontaneous splitting of ferromagnetic (Ga, Mn)As observed by resonant tunneling spectroscopy," Applied Physics Letters, vol. 73, pp. 363-365, July 1998. DOI:10.1063/1.121835

  486. K. Ohtani, Y. Ohno, F. Matsukura, and H. Ohno, "Well width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers," Physica E, vol. 2, pp. 200-203, July 1998. DOI:10.1016/S1386-9477(98)00043-5

  487. S. P. Guo, H. Ohno, A. Shen, and Y. Ohno, "InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates," Physica E, vol. 2, pp. 672-677, July 1998. DOI:10.1016/S1386-9477(98)00137-4

  488. H. Ohno, F. Matsukura, A. Shen, Y. Sugawara, N. Akiba, and T. Kuroiwa, "Ferromagnetic (Ga, Mn)As and its heterostructures," Physica E, vol. 2, pp. 904-908, July 1998. DOI:10.1016/S1386-9477(98)00184-2

  489. Y. Ohno, A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura, M. Yasumoto and A. Urayama, "v=1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well," Solid-State Electronics, vol. 42, pp. 1183-1185, July 1998. DOI:10.1016/S0038-1101(97)00326-2

  490. S. Kishimoto, Y. Ohno, F. Matsukura, H. Sakaki, and H. Ohno, "Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems," Solid-State Electronics, vol. 42, pp. 1187-1190, July 1998. DOI:10.1016/S0038-1101(98)00001-X

  491. A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, F. Matsukura, A. Shen, Y. Sugawara, and H. Ohno, "Low-temperature conduction and giant negative magnetoresistance in III-V based diluted magnetic semicondcutor: (Ga,Mn)As/GaAs," Physica B, vol. 249-251, pp. 775-779, June 1998. DOI:10.1016/S0921-4526(98)00312-3

  492. A. Shen, H. Ohno, F. Matsukura, H. C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, and Y. Ohno, "Superlattice and multilayer structures bsed on ferromagnetic semiconductor (Ga, Mn)As," Physica B, vol. 249-251, pp. 809-813, June 1998. DOI:10.1016/S0921-4526(98)00319-6

  493. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura, Y. Ohno, M. Yasumoto, and A. Urayama, "Interlayer quantum coherence and anomalous stability of v=1 bilayer quantum Hall state," Physica B, vol. 249-251, pp. 836-840, June 1998. DOI:10.1016/S0921-4526(98)00326-3

  494. A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, and F. Matsukura, "Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study," Applied Surface Science, vol. 130-132, pp. 382-386, June 1998. DOI:10.1016/S0169-4332(98)00087-7

  495. S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "Self-organized (In,Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates," Applied Surface Science, vol. 130-132, pp. 797-802, June 1998. DOI:10.1016/S0169-4332(98)00157-3

  496. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, Y. Ohno, S. Kishimoto, F. Matsukura, M. Yasumoto, and A. Urayama, "Phase transition in the v=2 bilayer quantum Hall state," Physical Review Letters, vol. 80, pp. 4534-4537, May 1998. DOI:10.1103/PhysRevLett.80.4534

  497. S. Guo, H. Ohno, A. Shen, Y. Ohno, and F. Matsukura, "Photoluminescence study of InAs quantum dots and quantum dashes on GaAs (211)B," Japanese Journal of Applied Physics, vol. 37, pp. 1527-1531, March 1998. DOI:10.1143/JJAP.37.1527

  498. T. Kuroiwa, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, T. Yasuda, and Y. Segawa, "Faraday rotation of ferromagnetic (Ga,Mn)As," Electronics Letters, vol. 34, pp. 190-192, January 1998. DOI:10.1049/el:19980128

  499. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport properties and origin of ferromagnetism in (Ga,Mn)As," Physical Review B, vol. 57, pp. R2037-R2040, January 1998. DOI:10.1103/PhysRevB.57.R2037

  500. A. Oiwa, S. Katsumoto, Y. Iye, H. Ohno, F. Matsukura, A. Shen, and Y. Sugawara, "Giant negative magnetoresistance of (Ga,Mn)As/GaAs in the vicinity of a metal-insulator transition," Physica. Status Solidi (b), vol. 205, pp 115-118, January 1998. DOI:10.1002/(SICI)1521-3951(199801)205:1<115::AID-PSSB115>3.0.CO;2-F

  501. S. Katsumoto, A. Oiwa, A. Endo, M. Hirasawa, Y. Iye, H. Ohno, F. Matsukura, A. Shen, and Y. Sugawara, "Strongly anisotropic hopping conduction in (Ga,Mn)As/GaAs," Physica Status Solidi (b), vol. 205, pp. 167-171, January 1998. DOI:10.1002/(SICI)1521-3951(199801)205:1<167::AID-PSSB167>3.0.CO;2-O

  502. H. Ohno, "Magnetotransport and magnetic properties of (Ga,Mn)As and its heterostructures," Acta Physica Polonica A, vol. 94, pp. 155-164, 1998. DOI:10.12693/APhysPolA.94.155



    1997

  503. A. Shen, Y. Horikoshi, H. Ohno, and S. P. Guo, "Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure," Applied Physics Letters, vol. 71, pp. 1540-1542, September 1997. DOI:10.1063/1.119973

  504. H. Ohno, "Preparation and properties of III-V based new diluted magnetic semiconductors," Advances in Colloid and Interface Science, vol. 71/72, pp. 61-75, September 1997. DOI:10.1016/S0001-8686(97)90010-5

  505. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Hirokoshi, O. Sugie, S. Kishimoto, F. Matsukura, Y. Ohno, and M. Yasumoto, "Anomalous stability of v=1 bilayer quantum Hall state," Solid State Communications, vol. 103, pp. 447-451, August 1997. DOI:10.1016/S0038-1098(97)00221-4

  506. A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, H. Ohno, Y. Sugawara, A. Shen, F. Matsukura, and Y. Iye, "Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga,Mn)As/GaAs," Solid State Communications, vol. 103, pp. 209-213, July 1997. DOI:10.1016/S0038-1098(97)00178-6

  507. S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "InAs self-organized quantum dashes grown on GaAs(211)B," Applied Physics Letters, vol. 70, pp. 2738-2740, May 1997. DOI:10.1063/1.119007

  508. A. Shen, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, and T. Kuroiwa, "Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs," Journal of Crystal Growth, vol. 175-176, pp. 1069-1074, May 1997.  DOI:10.1016/S0022-0248(96)00967-0

  509. H. Ohno, A. Mathur, Y. Ohno, F. Matsukura, K. Ohtani, N. Akiba, T. Kuroiwa, and H. Nakajima, "Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells," Applied Surface Science, vol. 113-114, pp. 90-96, April 1997. DOI:10.1016/S0169-4332(96)00879-3

  510. F. Matsukura, A. Oiwa, A. Shen, Y. Sugawara, N. Akiba, T. Kuroiwa, H. Ohno, A. Endo, S. Katsumoto, and Y. Iye, "Growth and properties of (Ga, Mn)As: a new III-V diluted magnetic semiconductor," Applied Surface Science, vol. 113/114, pp. 178-182, April 1997. DOI:10.1016/S0169-4332(96)00790-8

  511. A. Shen, F. Matsukura, Y. Sugawara, T. Kuroiwa, H. Ohno, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures," Applied Surface Science, vol. 113/114, pp. 183-188, April 1997. DOI:10.1016/S0169-4332(96)00865-3

  512. A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, Y. Ohno, N. Akiba, and T. Kuroiwa, "(Ga, Mn)As/GaAs diluted megnetic semiconductor superlattice structures prepared by molecular beam epitaxy," Japanese Journal of Applied Physics,  vol. 36, pp. L73-L75, February 1997. DOI:10.1143/JJAP.36.L73

  513. A. Oiwa, Y. Iye, S. Katsumoto, A. Endo, M. Hirasawa, H. Ohno, F. Matsukura, A. Shen, and H. Munekata, "Electrical and magnetic properties of (In,Mn)As/(Al,Ga)Sb heterostructures and bulk (Ga,Mn)As," Proceedings of the 12th International Conference on High Magnetic Fields in the Physics of Semiconductors II (eds. G. Landwehr and W. Ossau, World Scientific, Singapore, 1997), pp. 885-888.



    1996

  514. H. Ohno, F. Matsukura, A. Shen, Y. Sugawara, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, "Ferromagnetic order in (Ga, Mn)As/GaAs heterostructures," Proceedings of the 23rd International Conference on the Physics of Semiconductors (Berlin, Germany, July 21-26, 1996, Eds. M. Scheffler and R. Zimmermann, World Scientific, Singapore, 1996), pp. 405-408.

  515. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, "(Ga, Mn)As: A new diluted magnetic semiconductor based on GaAs," Applied Physics Letters, vol. 69, pp. 363-365, July 1996. DOI:10.1063/1.118061



    1995

  516. H. Ohno, "Mn-based III-V diluted magnetic (semimagnetic) semiconductors," Materials Science Forum, vol. 182-184, pp. 443-450, February 1995. DOI:10.4028/www.scientific.net/MSF.182-184.443

  517. H. Ohno, F. Matsukura, H. Munekata, Y. Iye, and J. Nakahara, "Temperature dependence of anomalous Hall effect and magnetism of (In, Mn)As/(Al ,Ga)Sb heterostructures," Proceedings of the 22nd International Conference on the Physics of Semiconductors (Vancouver, Canada, August 15-19, 1994, Ed. D. J. Lockwood, World Scientific, Singapore, 1995), pp. 2605-2608.



    Related Papers

  1. S. Goto, Y. Nomura, Y. Morishita, Y. Katayama, and H. Ohno, "Growth of GaAs by molecular-beam epitaxy using trisdimethylaminoarsine," Journal of Crystal Growth, vol. 149, pp. 143-146, April 1995. DOI:10.1016/0022-0248(95)00031-3

  2. H. Ohno, "Minimum light power for optical interconnection in integrated circuits," Optoelectronics -Devices and Technologies-, vol. 9(1), pp. 131-136, 1994.

  3. H. Ohno, "Inter-subband population inversion in tunneling heterostructures," Transactions of the Materials Research Society of Japan, vol. 19A, pp. 47-52, 1994.

  4. H. Ohno, L. Esaki, and E. E. Mendez, "Optoelectronic devices based on type II polytype tunnel heterostructures," Applied Physics Letters, vol. 60, pp. 3153-3155, June 1992. DOI:10.1063/1.106726

  5. H. Ohno, H. Munekata, T. Penney, S. von Molnár, and L. L.  Chang, "Partial ferromagnetic order in p-type (In,Mn)As diluted magnetic III-V semiconductors," Materials Science Forum, vol. 117&118, pp. 297-302, January 1993. DOI:10.4028/www.scientific.net/MSF.117-118.297

  6. H. Ohno, "Diluted magnetic III-V semiconductor and its transport properties," Japanese Journal of Applied Physics, vol. 32, pp. 459-461, 1993.

  7. H. Ohno, E. E. Mendez, A. Alexandrou, and J. M. Hong, "Tamm states in superlattices," Surface Science, vol. 267, pp. 161-165, October 1992. DOI:10.1016/0039-6028(92)91112-O

  8. H. Ohno, H. Munekata, T. Penney, S. von Molnár, and L. L. Chang, "Magnetotransport properties of p-type (In, Mn)As diluted magnetic III-V semiconductors," Physical Review Letters, vol. 68, pp. 2664-2667, April 1992. DOI:10.1103/PhysRevLett.68.2664

  9. S. von Molnár, H. Munekata, H. Ohno, and L. L. Chang, "New diluted magnetic semiconductors based on III-V Compounds," Journal of Magnetism and Magnetic Materials, vol. 93, pp. 356-364, February 1991. DOI:10.1016/0304-8853(91)90361-D

  10. H. Munekata, H. Ohno, R .R. Ruf, R. J. Gambino, and L. L. Chang, "P-type diluted magnetic III-V semiconductors," Journal of Crystal Growth, vol. 111, pp. 1011-1015, May 1991. DOI:10.1016/0022-0248(91)91123-R

  11. E. E. Mendez, H. Ohno, L. Esaki, and W. I. Wang, "Resonant interband tunneling via Landau levels in polytype heterostructures," Physical Review B, vol. 43, pp. 5196-5199, February 1991. DOI:10.1103/PhysRevB.43.5196

  12. H. Ohno, H. Munekata, S. von Molnár, and L. L. Chang, "New III-V diluted magnetic semiconductors," Journal of Applied Physica, vol. 69, pp. 6103-6108, April 1991. DOI:10.1063/1.347780

  13. H. Ohno, E. E. Mendez, and W. I. Wang, "Effects of carrier mass differences on the current-voltage characteristics of resonant tunneling structures," Applied Physics Letters, vol. 56, pp. 1793-1795, April 1990. DOI:10.1063/1.103102

  14. H. Munekata, H. Ohno, S. von Molnár, A. Harwit, A. Segmüller, and L. L. Chang, "Epitaxy of III-V diluted magnetic semiconductor materials," Journal of Vacuum Science Technology B, vol. 8, pp. 176-180, March 1990. DOI:10.1116/1.584849

  15. H. Ohno, E. E. Mendez, J. A. Brum, J. M. Hong, F. Agulló-Rueda, L. L. Chang, and L. Esaki, "Observation of 'Tamm states' in superlattices," Physical Review Letters, vol. 64, pp. 2555-2558, May 1990. DOI:10.1103/PhysRevLett.64.2555

  16. H. Ohno, E. E. Mendez, J. A. Brum, J. M. Hong, F. Agulló-Rueda, A. Alexandrou, L. L. Chang, and L. Esaki, "'Surface' Effects in superlattices: Formation of Tamm states," Proceedings of the 20th International Conference on the Physics of Semiconductors (World Scientific, Singapore, 1990), pp. 1013-1016.

  17. F. Agulló-Rueda, E. E. Mendez, H. Ohno, and J. M. Hong, "Interaction between extended and localized states in superlattices," Physical Review B, vol. 42, pp. 1470-1473, July 1990. DOI:10.1103/PhysRevB.42.1470

  18. H. Munekata, H. Ohno, S. von Molnár, A. Segmüller, L. L. Chang, and L. Esaki, "Diluted magnetic III-V semiconductors," Physical Review Letters, vol. 63, pp. 1849-1852, October 1989. DOI:10.1103/PhysRevLett.63.1849