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Related Papers
2024

M. Gołębiewski, R. Hertel, M. d’Aquino, V. Vasyuchka, M. Weiler, P. Pirro, M. Krawczyk, S. Fukami, H. Ohno, and J. Llandro, "Collective SpinWave Dynamics in Gyroid Ferromagnetic Nanostructures," ACS Applied Materials and Interfaces vol. 16, pp. 2217722188, April 2024.
DOI:10.1021/acsami.4c02366

N. S. Singh, K. Kobayashi, Q. Cao, K. Selcuk, T. Hu, S. Niazi, N. A. Aadit, S. Kanai, H. Ohno, S. Fukami, and K. Y. Camsari, "CMOS plus stochastic nanomagnets enabling heterogeneous computers for probabilistic inference and learning," Nature Communications vol. 15, 2685(9 pages), March 2024.
DOI:10.1038/s41467024466456

M.J. Grzybowski, C. Autieri, J. Domagala, C. Krasucki, A. Kaleta, S. Kret, K. Gas, M. Sawicki, R. Bożek, J. Suffczyński, and W. Pacuski, "Wurtzite vs. rocksalt MnSe epitaxy: electronic and altermagnetic properties," Nanoscale vol. 16, pp. 6259–6267, March 2024.
DOI:10.1039/D3NR04798A

M. Bhukta, T. Dohi, V. K. Bharadwaj, R. Zarzuela, M.A. Syskaki, M. Foerster, M. A. Niño, J. Sinova, R. Frömter, and M. Kläui, "Homochiral antiferromagnetic merons, antimerons and bimerons realized in synthetic antiferromagnets," Nature Communications vol. 15, 1641(10 pages), February 2024.
DOI:10.1038/s4146702445375z

M.A. Syskaki, T. Dohi, B. Bednarz, S. O. Filnov, S. A. Kasatikov, M. Bhukta, A. Smekhova, R. Pachat, J. W. van der Jagt, S. Ono, D. Ravelosona, J. Langer, M. Kläui, L. H. Diez, and G. Jakob, "Magnetoionic modulation of the interlayer exchange interaction in synthetic antiferromagnets," Applied Physics Letters vol. 124, 082408(7 pages), February 2024.
DOI:10.1063/5.0198750

J. Igarashi, B. Jinnai, K. Watanabe, T. Shinoda, T. Funatsu, H. Sato, S. Fukami, and H. Ohno, "Singlenanometer CoFeB/MgO magnetic tunnel junctions with highretention and highspeed capabilities," npj Spintronics vol. 2, 1(9pages), January 2024.
DOI:10.1038/s44306023000032
2023

T. Shinoda, J. Igarashi, B. Jinnai, S. Fukami, and H. Ohno, "Pitch Scaling Prospect of UltraSmall Magnetic Tunnel Junctions for HighDensity STTMRAM: Effects of Magnetostatic Interference from Neighboring Bits," IEEE Electron Device Letters vol. 45, pp.184187, December 2023.
DOI:10.1109/LED.2023.3345743

D. Abdelrahman, R. Iseli, M. Musya, B. Jinnai, S. Fukami, T. Yuasa, H. Sai, U. B. Wiesner, M. Saba, B. D. Wilts, U. Steiner, J. Llandro, and I. Gunkel, "Directed SelfAssembly of Diamond Networks in Triblock Terpolymer Films on Patterned Substrates," ACS Applied Materials and Interfaces vol. 15, pp. 5798157991, November 2023.
DOI:10.1021/acsami.3c10619

B. Chen, M. Zeng, K. H. Khoo, D. Das, X. Fong, S. Fukami, S. Li, W. Zhao, S. S.P. Parkin, S.N. Piramanayagam, and S. T. Lim, "Spintronic devices for highdensity memory and neuromorphic computing – A review," Materials Today vol. 70, pp. 193217, November 2023.
DOI:10.1016/j.mattod.2023.10.004

Y. Marui, M. Kawaguchi, S. Sumi, H. Awano, K. Nakamura, and M. Hayashi, “Spin and orbital Hall currents detected via currentinduced magnetooptical Kerr effect in V and Pt ," Physical Review B vol. 108, 144436(11 pages), October 2023.
DOI:10.1103/PhysRevB.108.144436

T. Dohi, M. Weißenhofer, N. Kerber, F. Kammerbauer, Y. Ge, K. Raab, J. Zázvorka, M.A. Syskaki, A. Shahee, M. Ruhwedel, T. Böttcher, P. Pirro, G. Jakob, U. Nowak, and M. Kläui, "Enhanced thermallyactivated skyrmion diffusion with tunable effective gyrotropic force," Nature Communications vol. 14, 5424(10 pages), September 2023.
DOI:10.1038/s41467023407200

J.Y. Yoon, P. Zhang, C.T. Chou, Y. Takeuchi, T. Uchimura, J. T. Hou, J. Han, S. Kanai, H. Ohno, S. Fukami, and L. Liu, "Handedness anomaly in a noncollinear antiferromagnet under spinorbit torque," Nature Materials, vol. 22, pp. 11061113, August 2023.
DOI:10.1038/s41563023016202

AS. Koshikawa, J. Llandro, M. Ohzeki, S. Fukami, H. Ohno, and N. Leo, "Magnetic order in nanoscale gyroid networks," Physical Review B vol. 108, 024414 (10 pages), June 2023.
DOI:10.1103/PhysRevB.108.024414

H. Masuda, Y. Yamane, T. Seki, K. Raab, T. Dohi, R. Modak, K. Uchida, J. Ieda, M. Klaui, and K. Takanashi, "Magnetization switching process by dual spinorbit torque in interlayer exchangecoupled systems," Applied Physics Letters vol. 122, 162402(7 pages), April 2023.
DOI:10.1063/5.0140328

Y. Sato, Y. Takeuchi, Y. Yamane, J. Y. Yoon, S. Kanai, J. Ieda, H. Ohno and S. Fukami,"Thermal stability of noncollinear antiferromagnetic Mn3Sn nanodot," Applied Physics Letters vol. 122, 122404(6 pages), March 2023.
DOI:10.1063/5.0135709

J. Han, R. Cheng, L. Liu, H. Ohno and S. Fukami, "Coherent antiferromagnetic spintronics," Nature Materials vol. 22 , pp. 684695 , March 2023.
DOI:10.1038/s41563023014926

S. Chowdhury, A. Grimaldi, N. A. Aadit, S. Niazi, M. Mohseni, S. Kanai, H. Ohno, S. Fukami, L. Theogarajan, G. Finocchio, S. Datta, and K. Y. Camsari, "A fullstack view of probabilistic computing with pbits: devices, architectures and algorithms," IEEE Journal on Exploratory SolidState Computational Devices and Circuits, vol. 9, (11 pages), March 2023.
DOI:10.1109/JXCDC.2023.3256981

M. Shinozaki, J. Igarashi, S. Iwakiri, T. Kitada, K. Hayakawa, B. Jinnai, T. Otsuka, S. Fukami, K. Kobayashi, and H. Ohno,"Nonlinear conductance in nanoscale CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis," Physical Review B vol. 107, 094436(8 pages), February 2023.
DOI:10.1103/PhysRevB.107.094436
2022

K. Kobayashi, K. Hayakawa, J. Igarashi, W. A. Borders, S. Kanai, H.
Ohno and S. Fukami, "ExternalFieldRobust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling," Physical Review Applied vol. 18, 054085(9 pages), November 2022.
DOI:10.1103/PhysRevApplied.18.024075

J. Gibbons, T. Dohi, V. P. Amin, F. Xue, H. Ren, J.W. Xu, H. Arava,
S. Shim, H. Saglam, Y. Liu, J. E. Pearson, N. Mason, A. K.
PetfordLong, P. M. Haney, M. D. Stiles, E. E. Fullerton, A. D. Kent,
S. Fukami, and A. Hoffmann, "Large Exotic Spin Torques in
Antiferromagnetic Iron Rhodium," Physical Review Applied vol. 18,
024075(12 pages), August 2022.
DOI:10.1103/PhysRevApplied.18.054085

R. R. Chowdhury, S. DuttaGupta, C. Patra, A. Kataria, S. Fukami, and
R. P. Singh, "Anisotropic magnetotransport in the layered
antiferromagnet TaFe1.25Te3," Physical Review Materials vol. 6,
084408(8 pages) August 2022.
DOI:10.1103/PhysRevMaterials.6.084408

T. Funatsu, S. Kanai, J. Ieda, S. Fukami, and H. Ohno, "Local
bifurcation with spintransfer torque in superparamagnetic tunnel
junctions," Nature Communications vol. 13, 4079(8 pages) July 2022.
DOI:10.1038/s41467022317881

H. Masuda, T. Seki, Y. Yamane, R. Modak, K. Uchida, J. Ieda, Y.C.
Lau, S. Fukami, and K. Takanashi, "Large Antisymmetric Interlayer
Exchange Coupling Enabling Perpendicular Magnetization Switching by an
InPlane Magnetic Field," Physical Review Applied vol. 17,
054036(9 pages), May 2022.
DOI:10.1103/PhysRevApplied.17.054036

T. Uchimura, J. Yoon, Y. Sato, Y. Takeuchi, S. Kanai, R. Takechi, K.
Kishi, Y. Yamane, S. DuttaGupta, J. Ieda, H. Ohno, and S. Fukami,
"Observation of domain structure in noncollinear antiferromagnetic
Mn3Sn thin films by magnetooptical Kerr effect,"
Applied Physics Letters vol. 120, 172405 (5 pages), April 2022.
DOI: 10.1063/5.0089355

Y. Yamane, S. Fukami, and J. Ieda,
"Theory of Emergent Inductance with SpinOrbit Coupling Effects,"
Physical Review Letters vol. 128, 147201(6 pages), April 2022.
DOI:10.1103/PhysRevLett.128.147201

S. Kanai, F. J. Heremans, H. Seo, G. Wolfowicz, C. P. Anderson, S. E.
Sullivan, M. Onizhuk, G. Galli, D. D. Awschalom, and H. Ohno,
"Generalized scaling of spin qubit coherence in over 12,000 host materials,"
Proceedings of National Academy of Science of the United States of
America vol. 119, e2121808119 (8 pages) April 2022.
DOI:10.1073/pnas.2121808119

D. Kumar, T. Jin, R. Sbiaa, M. Klaui, S. Bedanta, S. Fukami, D.
Ravelosona, S. Yang, X. Liu, and S.N. Piramanayagam, "Domain wall memory:
Physics, materials, and devices," Physics Reports vol.
958, pp. 135, March 2022.
DOI:10.1016/j.physrep.2022.02.001

Y. Takeuchi, R. Okuda, J. Igarashi, B. Jinnai, T. Saino, S. Ikeda, S.
Fukami and H. Ohno,
"Nanometerthin L10MnAl film with B2CoAl
underlayer for highspeed and highdensity STTMRAM: Structure and
magnetic properties,"
Applied Physics Letters vol. 120, 052404 (5
pages),
February 2022.
DOI:10.1063/5.0077874

J. Kaiser, W. A. Borders, K. Y. Camsari, S. Fukami, H. Ohno, and S.Datta,
"HardwareAware In Situ Learning Based on Stochastic Magnetic Tunnel Junctions,"
Physical Review Applied vol. 17, 014016 (12 pages),
January 2022.
DOI:10.1103/PhysRevApplied.17.014016

R. R. Chowdhury, C. Patra, S. DuttaGupta, S. Satheesh, S. Dan, S. Fukami, and R. P. Singh,
"Modification of unconventional Hall effect
with doping at the nonmagnetic site in a twodimensional van der Waals
ferromagnet,"
Physical Review Materials vol. 6, 014002 (9 pages),
January 2022.
DOI:10.1103/PhysRevMaterials.6.014002
2021

Y. Takeuchi, E. C. I. Enobio, B. Jinnai, H. Sato, S. Fukami, and H.Ohno,
"Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions,"
Applied Physics Letters vol. 119, 242403 (5 pages), December 2021.
DOI:10.1063/5.0072957

M. Zahedinejad, H. Fulara, R. Khymyn, A. Houshang, M. Dvornik, S. Fukami, S. Kanai, H. Ohno, and J. Akerman,
"Memristive control of mutual spin Hall nanooscillator synchronization for neuromorphic computing,"
Nature Materials, vol. 21, pp. 8187, November 2021.
DOI:10.1038/s41563021011536

K. Kobayashi, W. A. Borders, S. Kanai, K. Hayakawa, H. Ohno, and S. Fukami,
"Sigmoidal curves of stochastic magnetic tunnel junctions with perpendicular easy axis,"
Applied Physics Letters vol. 119, 132406 (5 pages), September 2021.
DOI:10.1063/5.0065919

R. Roy Chowdhury, S. DuttaGupta, C. Patra, O. A. Tretiakov, S. Sharma, S. Fukami, H. Ohno, and R. P. Singh,
"Unconventional Hall effect and its variation with Codoping in van der Waals Fe3GeTe2,"
Scientific Reports vol. 11, 14121 (10 pages), July 2021.
DOI:10.1038/s41598021934026

S. Iihama, Q. Remy, J. Igarashi, G. Malinowski, M. Hehn, and S. Mangin,
"Spintransport Mediated Singleshot Alloptical Magnetization Switching of Metallic Films,"
Journal of the Physical Society of Japan vol. 90, 081009 (13 pages), June 2021.
DOI:10.7566/JPSJ.90.081009

T. Dohi, S. Fukami, and H. Ohno,
"Influence of domain wall anisotropy on the currentinduced hysteresis loop shift for quantification of the DzyaloshinskiiMoriya interaction,"
Physical Review B vol. 103, 214450 (9 pages), June 2021.
DOI:10.1103/PhysRevB.103.214450

J.Y. Yoon, Y. Takeuchi, S. DuttaGupta, Y. Yamane, S. Kanai, J. Ieda, H. Ohno, and S. Fukami,
"Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn3+xSn1x thin films,"
AIP Advances vol. 11, 065318 (6 pages), June 2021.
DOI:10.1063/5.0043192

R. Sharma, R. Mishra, T. Ngo, Y. Guo, S. Fukami, H. Sato, H. Ohno, and H. Yang,
"Electrically connected spintorque oscillators array for 2.4GHz WiFi band transmission and energy harvesting,"
Nature Communications vol. 12, 2924 (10 pages), May 2021.
DOI:10.1038/s41467021231811

Y. Takeuchi, Y. Yamane, J. Yoon, R. Itoh, B. Jinnai, S. Kanai, J. Ieda, S. Fukami, and H. Ohno,
"Chiralspin rotation of noncollinear antiferromagnet by spinorbit torque,"
Nature Materials, vol. 20, pp. 13641370, May 2021.
DOI:10.1103/10.1038/s41563021010053

Q. Shao, P. Li, L. Liu, H. Yang, S. Fukami, A. Razavi, H. Wu, F. Freimuth, Y. Mokrousov, M. D. Stiles, S. Emori, A. Hoffmann, J. Akerman, K. Roy, J. Wang, S. Yang, K. Garellob, and W. Zhang,
"Roadmap of spinorbit torques,"
IEEE Transactions on Magnetics, vol. 57, 800439(39 pages), May 2021.
DOI:10.1109/TMAG.2021.3078583

K. Y. Camsari, M. M. Torunbalci, W. A. Borders, H. Ohno, and S. Fukami,
"DoubleFreeLayer Magnetic Tunnel Junctions for Probabilistic Bits,"
Physical Review Applied, vol. 15, 044049 (10 pages), April 2021.
DOI:10.1103/PhysRevApplied.15.044049

G. Wolfowicz, F. J. Heremans, C. P. Anderson, S. Kanai, H. Seo, A. Gali, G. Galli, and D. D. Awschalom,
"Quantum guidelines for solidstate spin defects,"
Nature Reviews Materials, vol. 6, pp. 906925, April 2021.
DOI:10.1038/s4157802100306y

S. Kanai, K. Hayakawa, H. Ohno, and S. Fukami,
"Theory of relaxation time of stochastic nanomagnets,"
Physical Review B, vol. 103, 094423 (12 pages), March 2021.
DOI:10.1103/PhysRevB.103.094423

K. Hayakawa, S. Kanai, T. Funatsu, J. Igarashi, B. Jinnai, W. A. Borders, H. Ohno, and S. Fukami,
"Nanosecond Random Telegraph Noise in InPlane Magnetic Tunnel Junctions,"
Physical Review Letters, vol. 126, 117202 (6 pages), March 2021.
DOI:10.1103/PhysRevLett.126.117202

J. Ieda and Y. Yamane,
"Intrinsic and extrinsic tunability of Rashba spinorbit coupled emergent inductors,"
Physical Review B, vol. 103, L100402 (5 pages), March 2021.
DOI:10.1103/PhysRevB.103.L100402

C. Zhang, Y. Takeuchi, S. Fukami, and H. Ohno,
"Fieldfree and subns magnetization switching of magnetic tunnel junctions by combining spintransfer torque and spinorbit torque,"
Applied Physics Letters, vol. 118, 092406 (4 pages), March 2021.
DOI:10.1063/5.0039061

B. Jinnai, J. Igarashi, K. Watanabe, E.C.I. Enobio, S. Fukami, and H. Ohno,
"Coherent magnetization reversal of a cylindrical nanomagnet in shapeanisotropy magnetic tunnel junctions,"
Applied Physics Letters, vol. 118, 082404 (5 pages), February 2021.
DOI:10.1063/5.0043058

A. K. Dhiman, T. Dohib, W. Dobrogowski, Z. Kurant, I. Sveklo, S. Fukami, H. Ohno, and A. Maziewski,
"Magnetization processes and magnetic domain structures in Ta/CoFeB/MgO stacks,"
Journal of Magnetism and Magnetic Materials, vol. 529, 167699 (17 pages), February 2021.
DOI:10.1016/j.jmmm.2020.167699

J. Igarashi, B. Jinnai, V. Desbuis, S. Mangin, S. Fukami, and H. Ohno,
"Temperature dependence of the energy barrier in X/1X nm shapeanisotropy magnetic tunnel junctions,"
Applied Physics Letters, vol. 118, 012409 (5 pages), January 2021.
DOI:10.1063/5.0029031
2020

M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu,
"DualPort SOTMRAM Achieving 90MHz Read and 60MHz Write Operations Under FieldAssistanceFree Condition,"
IEEE Journal of SolidState Circuits, vol. 56, pp. 11161128, December 2020.
DOI:10.1109/JSSC.2020.3039800

J. Igarashi, Q. Remy, S. Iihama, G. Malinowski, M. Hehn, J. Gorchon, J. Hohlfeld, S. Fukami, H. Ohno, and S. Mangin,
"Engineering SingleShot AllOptical Switching of Ferromagnetic Materials,"
Nano Letters, vol. 20, 86548660, November 2020.
DOI:10.1021/acs.nanolett.0c03373

M. Shinozaki, T. Dohi, J. Igarashi, J. Llandro, S. Fukami, H. Sato, and H. Ohno,
"Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spinwave resonance,"
Applied. Physics Letters, vol. 117, 202404 (4 pages), October 2020.
DOI:10.1063/5.0020591

S. DuttaGupta, A. Kurenkov, O. A. Tretiakov, G. Krishnaswamy, G. Sala, V. Krizakova, F. Maccherozzi, S. S. Dhesi, P. Gambardella, S. Fukami, and H. Ohno,
"Spinorbit torque switching of an antiferromagnetic metallic heterostructure,"
Nature Communications, vol. 11, 5715 (8 pages), November 2020.
DOI:10.1038/s41467020195114

G. K. Krishnaswamy, A. Kurenkov, G. Sala, M. Baumgartner, V. Krizakova, C. Nistor, F. Maccherozzi, S. S. Dhesi, S. Fukami, H. Ohno, and P. Gambardella,
"Multidomain Memristive Switching of Pt38Mn62/[Co/Ni]n Multilayers,"
Physical Review Applied, vol. 14, 044036 (10 pages), October 2020.
DOI:10.1103/PhysRevApplied.14.044036

Q. Remy, J. Igarashi, S. Iihama, G. Malinowski, M. Hehn, J. Gorchon, J. Hohlfeld, S. Fukami, H. Ohno, and S. Mangin,
"Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet,"
Advanced Science, vol. 7, 2001996 (8 pages), October 2020.
DOI:10.1002/advs.202001996

K. Ishibashi, S. Iihama, Y. Takeuchi, K. Furuya, S. Kanai, S. Fukami, and S. Mizukami,
"Alloptical probe of magnetization precession modulated by spinorbit torque,"
Applied Physics Lertters, vol. 117, 122403 (4 pages), September 2020.
DOI:10.1063/5.0020852

S. Fukami, V. O. Lorenz, and O. Gomonay,
"Antiferromagnetic spintronics,"
Journal of Applied Physics Letters, vol. 128, 070401 (3 pages), August 2020.
DOI:10.1063/5.0023614

H. Fulara, M. Zahedinejad, R. Khymyn, M. Dvornik, S. Fukami, S. Kanai, H. Ohno, and J. Akerman,
"Giant voltagecontrolled modulation of spin Hall nanooscillator damping,"
Nature Communications, vol. 11, 4006 (7 pages), August 2020.
DOI:10.1038/s4146702017833x

K. V. De Zoysa, S. DuttaGupta, R. Itoh, Y. Takeuchi, H. Ohno, and S. Fukami,
"Composition dependence of spinorbit torque in Pt1xMnx/CoFeB heterostructures,"
Applied Physics Letters, vol. 117, 012402 (4 pages), July 2020.
DOI:10.1063/5.0011448

S. Fukami, W. A. Borders, A. Z. Pervaiz, K. Y. Camsari, S. Datta, and H. Ohno,
"Probabilistic computing based on spintronics technology,"
Conference Proceedings, 2020 IEEE Silicon Nanoelectronics Workshop, 2122, July 2020.
DOI:10.1109/SNW50361.2020.9131622

A. Kurenkov, S. Fukami, and H. Ohno,
"Neuromorphic computing with antiferromagnetic spintronics,"
Journal of Applied Physics, vol. 128, 010902 (12 pages), July 2020.
DOI:10.1063/5.0009482

O. Stejskal, A. Thiaville, J. Hamrle, S. Fukami, and H. Ohno,
"Current distribution in metallic multilayers from resistance measurements,"
Physical Review B, vol. 101, 235437 (9 pages), June 2020.
DOI:10.1103/PhysRevB.101.235437

B. Jinnai, K. Watanabe S. Fukami, and H. Ohno,
"Scaling magnetic tunnel junction down to singledigit nanometersChallenges and prospects,"
Applied Physics Letters, vol. 116, 160501 (7 pages), April 2020.
DOI:10.1063/5.0004434

J. Llandro, D. M. Love, A. KovacsJan, J. Caron, K. N. Vyas, A. Kakay, R. Salikhov, K. Lenz, J. Fassbender, M. R. J. Scherer, C. Cimorra, U. Steiner, C. H. W. Barnes, R. E. DuninBorkowski, S. Fukami, and H. Ohno,
"Visualizing Magnetic Structure in 3D Nanoscale NiFe Gyroid Networks,"
Nano Letters, vol. 20, 36423650, April 2020.
DOI:10.1021/acs.nanolett.0c00578

J. Ishihara, G. Kitazawa, Y. Furusho, Y. Ohno, H. Ohno, and K. Miyajima,
"Zerofield spin precession dynamics of highmobility twodimensional electron gas in persistent spin helix regime,"
Physical Review B, vol. 101, 094438 (5 pages), March 2020.
DOI:10.1103/PhysRevB.101.094438

N. Keswani, Y. Nakajima, N. Chauhan, T. Ukai, H. Chakraborti, K. D. Gupta, T. Hanajiri, S. Kumar, Y. Ohno, H. Ohno, and P. Das,
"Complex switching behavior of magnetostatically coupled singledomain nanomagnets probed by microHall magnetometry,"
Applied Physics Letters, vol. 116, 102401 (5 pages), March 2020.
DOI:10.1063/1.5144841

J. Grollier, D. Querlioz, K. Y. Camsari, K. EverschorSitte, S. Fukami, and M. D. Stiles,
"Neuromorphic spintronics,"
Nature Electronics, vol. 3, pp. 360370, March 2020.
DOI:10.1038/s4192801903609
2019

R. Itoh, Y. Takeuchi, S. DuttaGupta, S. Fukami, and H. Ohno,
"Stack structure and temperature dependenceof spinorbit torques in heterostructures withantiferromagnetic PtMn,"
Applied Physics Letters, vol. 115, 242404 (4 pages), December 2019.
DOI:10.1063/1.5129829

J. Yoon, Y. Takeuchi, R. Itoh, S. Kanai, S. Fukami, and H. Ohno,
"Crystal orientation and anomalaous Hall effect of sputterdeposited noncolinear antiferromagnetic Mn_{3}Sn thin films,"
Applied Physics Express, vol. 13, 013001 (4 pages), December 2019.
DOI.org/10.7567/18820786/ab5874

T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno,
"Formation and currentinduced motion of synthetic antiferromagnetic skyrmion bubbles,"
Nature communications, vol. 10, 5153 (6 pages), November 2019.
DOI.org/10.1038/s41467019131826

Y. C. Lau, Z. Chi, T. Taniguchi, M. Kawaguchi, G. Shibata, N. Kawamura, M. Suzuki, S. Fukami, A. Fujimori, H. Ohno, and M. Hayashi,
"Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers,"
Physical Review Materials, vol. 3, 104419 (8 pages), October 2019.
DOI:10.1103/PhysRevMaterials.3.104419

T. Saino, S. Kanai, M. Shinozaki, B. Jinnai, H. Sato, S. Fukami, and H. Ohno,
"Writeerror rate of nanoscale magnetic tunnel junctions in the precessional regime,"
Applied Physics Letters, vol. 115, 142406 (5 pages), October 2019.
DOI:10.1063/1.5121157

W. A. Borders, A. Z. Pervaiz, S. Fukami, K. Y. Camsari, H. Ohno, and S. Datta,
"Integer factorization using stochastic magnetic tunnel junctions,"
Nature, vol. 573, 390393, September 2019.
DOI:10.1038/s4158601915579

S. Gupta, F. Matsukura, and H. Ohno,
"Properties of sputtered full Heusler alloy Cr_{2}MnSb and its application in a magnetic tunnel junction,"
Journal of Physics D: Applied Physics, vol. 52, 495002 (6 pages), September 2019.
DOI:10.1088/13616463/ab3fc6

L. Chen, J. Zhao, D. Weiss, C.H. Back, F. Matsukura, and H. Ohno,
"Magnetization dynamics and related phenomena in semiconductors with ferromagnetism,"
Journal of Semiconductors, vol. 40, 081502 (8 pages), August 2019.
DOI:10.1088/16744926/40/8/081502

T. Dietl, A. Bonanni, and H. Ohno,
"Families of magnetic semiconductors  an overview,"
Journal of Semiconductors, vol. 40, 080301 (5 pages), August 2019.
DOI:10.1088/16744926/40/8/080301

A. Okada, Y. Takeuchi., K. Furuya, C. Zhang, H. Sato, S. Fukami, and H. Ohno,
"SpinPumpingFree Determination of SpinOrbit Torque Efficiency from SpinTorque Ferromagnetic Resonance,"
Physical Review Applied, vol. 12, 014040 (11 pages), July 2019.
DOI:10.1103/PhysRevApplied.12.014040

A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, and H. Ohno,
"Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spinorbit torque switching,"
Advanced Materials, vol. 31, 1900636 (7 pages), April 2019.
DOI:10.1002/adma.201900636

T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno,
"Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems,"
Applied Physics Letters, vol. 114, 042405 (5 pages), January 2019.
DOI:10.1063/1.5084095

Y. Takahashi, Y. Takeuchi, C. Zhang, B. Jinnai, S. Fukami, and H. Ohno,
"Spinorbit torqueinduced switching of inplane magnetized elliptic nanodot arrays with various easyaxis directions measured by differential planar Hall resistance,"
Applied Physics Letters, vol. 114, 012410 (4 pages), January 2019.
DOI:10.1063/1.5075542
2018

H. Sato, P. Chureemart, F. Matsukura, R. W. Chantrell, H. Ohno, and R. F. L. Evans,
"Temperaturedependent properties of CoFeB/MgO thin films: Experiments versus simulations,"
Physical Review B, vol. 98, 214428 (7 pages), December 2018.
DOI:10.1103/PhysRevB.98.214428

B. Jinnai, H. Sato, S. Fukami, and H. Ohno,
"Scalability and wide temperature range operation of spinorbit torque switching devices using Co/Pt multilayer nanowires,"
Applied Physics Letters, vol. 113, 212403 (4 pages), November 2018.
DOI:10.1063/1.5045814

S. DuttaGupta, R. Itoh, S. Fukami, and H. Ohno,
"Angle dependent magnetoresistance in heterostructures with antiferromagnetic and nonmagnetic metals,"
Applied Physics Letters, vol. 113, 202404 (5 pages), November 2018.
DOI:10.1063/1.5049566

M. Bersweiler, E. C. I. Enobio, S. Fukami, H. Sato, and H. Ohno,
"An effect of cappinglayer material on interfacial anisotropy and thermal stability factor of MgO/CoFeB/Ta/CoFeB/MgO/cappinglayer structure,"
Applied Physics Letters, vol. 113, 172401 (4 pages), October 2018.
DOI:10.1063/1.5050486

S. Fukami and H. Ohno,
"Perspective: Spintronic synapse for artificial neural network,"
Journal of Applied Physics, vol. 124, 151904 (8 pages), October 2018.
DOI:10.1063/1.5042317

W. A. Borders, S. Fukami, and H. Ohno,
"Characterization of spinorbit torquecontrolled synapse device for artificial neural network applications,"
Japanese Journal of Applied Physics, vol. 57, 1002B2 (5 pages), September 2018.
DOI:10.7567/JJAP.57.1002B2

M. Pohlit, S. Rosler, Y. Ohno, H. Ohno, S. Molnar, Z. Fisk, J. Muller, and S. Wirth,
"Evidence for Ferromagnetic Clusters in the ColossalMagnetoresistance Material EuB_{6},"
Physical Review Letters, vol. 120, 257201 (5 pages), June 2018.
DOI:10.1103/PhysRevLett.120.257201

N. Ichikawa, T. Dohi, A. Okada, H. Sato, S. Fukami, and H. Ohno,
"Nonlinear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis,"
Applied Physics Letters, vol. 112, 202402 (5 pages), May 2018.
DOI:10.1063/1.5035487

Y. Takeuchi, C. Zhang, A. Okada, H. Sato, S. Fukami, and H. Ohno,
"Spinorbit torques in highresistivityW/CoFeB/MgO,"
Applied Physics Letters, vol. 112, 192408 (5 pages), April 2018.
DOI:10.1063/1.5027855

A. Okada, S. Kanai, S. Fukami, H. Sato, and H. Ohno,
"Electricfield effect on the easy cone angle of the easycone state in CoFeB/MgO investigated by ferromagnetic resonance,"
Applied Physics Letters, vol. 111, 172402 (5 pages), April 2018.
DOI:10.1063/1.5026418

E. C. I. Enobio, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno,
"Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement,"
Japanese Journal of Applied Physics, vol. 57, 04FN08 (4 pages), March 2018.
DOI:10.7567/JJAP.57.04FN08

M. Shinozaki, J. Igarashi, H. Sato, and H. Ohno,
"Freelayer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions,"
Applied Physics Express, vol. 11, 043001 (4 pages), March 2018.
DOI:10.7567/APEX.11.043001

J. Železný, P. Wadley, K. Olejnik, A. Hoffmann, and H. Ohno,
"Spin transport and spin torque in antiferromagnetic devices,"
Nature Physics, vol. 14, 220228 (9 pages), March 2018.
DOI:10.1038/s4156701800627

C. Zhang, S. Fukami, S. DuttaGupta, H. Sato, and H. Ohno,
"Time and spatial evolution of spinorbit torqueinduced magnetization switching in W/CoFeB/MgO structures with various sizes,"
Japanese Journal of Applied Physics, vol. 57, 04FN02 (5 pages), February 2018.
DOI:10.7567/JJAP.57.04FN02

K. Watanabe, B. Jinnai, S. Fukami, H. Sato, and H. Ohno,
"Shape anisotropy revisited in singledigit nanometer magnetic tunnel junctions,"
Nature Communications, vol. 9, 663 (6 pages), February 2018.
DOI:10.1038/s41467018030037

S. Gupta, S. Kanai, F. Matsukura, and H. Ohno,
"Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi_{1x}Sb_{x})_{2}Te_{3},"
Japanese Journal of Applied Physics, vol. 57, 020302 (4 pages), January 2018.
DOI:10.7567/JJAP.57.020302
2017

S. Bhatti, R. Sabiaa, A. Hirohota, H. Ohno, S. Fukami, and S.N. Piramanayagam,
"Spintronics based random access memory: a review,"
Material Today, vol. 20, 9 (19 pages), November 2017.
DOI:10.1016/j.mattod.2017.07.007

H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, H. Inoue, M. Muraguchi, M. Niwa, H. Ohno, and T. Endoh,
"Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of DoubleMgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer,"
IEEE Transactions on Magnetics, vol. 53, 2501604 (4 pages), November 2017.
DOI:10.1109/TMAG.2017.2701838

S. DuttaGupta, T. Kanemura, C. Zhang, A. Kurenkov, S. Fukami, and H. Ohno,
"Spinorbit torques and DzyaloshinskiiMoriya interaction in PtMn/[Co/Ni] heterostructures,"
Applied Physics Letters, vol. 111, 182412 (5 pages), November 2017.
DOI:10.1063/1.5005593

W. A. Borders, S. Fukami, and H. Ohno,
"Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for SpinOrbit Torque Switching Device,"
IEEE Transactions on Magnetics, vol. 53, 6000804 (4 pages), October 2017.
DOI:10.1109/TMAG.2017.2703817

M. Bersweiler, H. Sato, and H. Ohno,
"Magnetic and FreeLayer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition,"
IEEE Magnetics Letters, vol. 8, 3109003 (3 pages), October 2017.
DOI:10.1109/LMAG.2017.2748929

J. Igarashi, J. Llandro, H. Sato, F. Matsukura, and H. Ohno,
"Magneticfieldangle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis,"
Applied Physics Letters, vol. 111, 132407 (4 pages), September 2017.
DOI:10.1063/1.5004968

B. Jinnai, C. Zhang, A. Kurenkov, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno,
"Spinorbit torque induced magnetization switching in Co/Pt multilayers,"
Applied Physics Letters, vol. 111, 102402 (3 pages), September 2017.
DOI:10.1063/1.5001171

S. Gupta, S. Kanai, F. Matsukura, and H. Ohno,
"Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr,"
Applied Physics Express, vol. 10, 103001 (3 pages), September 2017.
DOI:10.7567/APEX.10.103001

T. Dohi, S. Kanai, F. Matsukura, and H. Ohno,
"Electricfield effect on spinwave resonance in a nanoscale CoFeB/MgO magnetic tunnel junction,"
Applied Physics Letters, vol. 111, 027403 (3 pages), August 2017.
DOI:10.1063/1.4999312

H. Sato, S. Ikeda, and H. Ohno,
"Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm,"
Japanese Journal of Applied Physics, vol. 56, 0802A6 (9 pages), July 2017.
DOI:10.7567/JJAP.56.0802A6

M. Bersweiler, K. Watanabe, H. Sato, F. Matsukura, and H. Ohno,
"Magnetic properties of FeV/MgObased structures,"
Applied Physics Express, vol. 10, 083001 (3 pages), July 2017.
DOI:10.7567/APEX.10.083001

S. Kanai, F. Matsukura, and H. Ohno,
"Electricfieldinduced magnetization switching in CoFeB/MgO magnetic tunnel junctions,"
Japanese Journal of Applied Physics, vol. 58, 0802A3 (7 pages), June 2017.
DOI:10.7567/JJAP.56.0802A3

S. Fukami, and H. Ohno,
"Magnetization switching schemes for nanoscale threeterminal spintronics devices,"
Japanese Journal of Applied Physics, vol. 56, 0802A1 (12 pages), June2017.
DOI:10.7567/JJAP.56.0802A1

K. Watanabe, S. Fukami, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno,
"Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers,"
Japanese Journal of Applied Physics, vol. 56, 0802B2 (4 pages), June 2017.
DOI:10.7567/JJAP.56.0802B2

J. J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno, Y. Ikuhara, and K. P. McKenna,
"Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices,"
Scientific Reports, vol. 7, 45594 (9 pages), April 2017.
DOI:10.1038/srep45594

A. Okada, S. He, B. Gu, S. Kanai, A. Soumyanarayanan, S. T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, and C. Panagopoulos,
"Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy,"
Proceedings of the National Academy of Sciences of the United States of America, vol. 114, 3815 (6 pages), March 2017.
DOI:10.1073/pnas.1613864114

A. Kurenkov, C. Zhang, S. DuttaGupta, S. Fukami, and H. Ohno,
"Devicesize dependence of fieldfree spinorbit torque induced magnetization switching in antiferromagnet/ferromagnet structures,"
Applied Physics Letters, vol. 110, 092410 (5 pages), March 2017.
DOI:10.1063/1.4977838

D. Suzuki, M. Natsui, S. Ikeda, T. Endoh, H. Ohno. and T. Hanyu,
"Design of a variationresilient singleended nonvolatile sixinput lookup table circuit with a redundantmagnetic tunnel junctionbased active load for smart Internetofthings applications,"
ELECTRONICS LETTERS, vol. 53, 456 (2 pages), March 2017.
DOI:10.1049/el.2016.4233

M. Natsui, A. Tamakoshi, T. Endoh, H. Ohno, and T. Hanyu,
"A spin transfer torque magnetoresistance random access memorybased highdensity and ultralowpower associative memory for fully dataadaptive nearest neighbor search with currentmode similarity evaluation and timedomain minimum searching,"
Japanese Journal of Applied Physics, vol. 56, 04CN08 (9 pages), March 2017.
https://iopscience.iop.org/article/10.7567/JJAP.56.04CN01

N. Ohshima, H. Sato, S. Kanai, J. Llandro, S. Fukami, F. Matsukura, and H. Ohno,
"Currentinduced magnetization switching in a nanoscale CoFeBMgO magnetic tunnel junction under inplane magnetic field
,"
AIP Advances, vol. 7, 055927 (5 pages), February 2017.
DOI:10.1063/1.4977224

S. Gupta, S. Kanai, F. Matsukura, and H. Ohno,
"Ferromagnetic resonance spectra of Py deposited on (Bi_{1x}Sb_{x})_{2}Te_{3},"
AIP Advances, vol. 7, 055919 (4 pages), January 2017.
DOI:10.1063/1.4974891

S. DuttaGupta, S. Fukami, B. Kuerbanjiang, H. Sato, F. Matsukura, V. K. Lazarov, and H. Ohno,
"Magnetic domainwall creep driven by field and current in Ta/CoFeB/MgO,"
AIP Advances, vol. 7, 055918 (7 pages), January 2017.
DOI:10.1063/1.4974889

W A. Borders, H. Akima, S. Fukami, S, Moriya, S. Kurihara, Y. Horio, S. Sato, and H. Ohno,
"Analogue spin.orbit torque device for artificialneuralnetworkbased associative memory operation,"
Applied Physics Express, vol. 10, 013007 (4 pages), January 2017.
DOI:10.7567/APEX.10.013007

M. Shinozaki, E. Hirayama, S. Kanai, H. Sato, F. Matsukura, H. Ohno,
"Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodynedetected ferromagnetic resonance,"
Applied Physics Express, vol. 10, 013001 (3 pages), January 2017.
DOI:10.7567/APEX.10.013001
2016

C. Zhang, S. Fukami, K. Watanabe, A. Ohkawara, S. DuttaGupta, H. Sato, F. Matsukura, and H. Ohno,
"Critical role of W deposition condition on spinorbit torque induced
magnetization switching in nanoscale W/CoFeB/MgO,"
Applied Physics Letters, vol. 109, 192405 (5 pages), November 2016.
DOI:10.1063/1.4967475

T. Hanyu, T. Endoh, D. Suzuki, H. Koike, Y. Ma, N. Onizawa, M. Natsui, S. Ikeda, and H. Ohno,
"StandbyPowerFree Integrated Circuits Using MTJBased VLSI Computing,"
Proceedings of the IEEE, vol. 104, 10 (20 pages), March 2016.
DOI:10.1109/JPROC.2016.2574939

H. Mazraati, T. Q. Le, A. A. Awad, S. Chung, E. Hirayama, S. Ikeda, F. Matsukura, H. Ohno, and J. Akerman,
"Free and referencelayer magnetization modes versus inplane magnetic field in a magnetic tunnel
junction with perpendicular magnetic easy axis,"
Physical Review B, vol. 94, 104428 (6 pages), September 2016.
DOI:10.1103/PhysRevB.94.104428

Y. Hibino, T. Koyama, A. Obinata, T. Hirai, S. Ota, K. Miwa, S. Ono, F. Matsukura, H. Ohno, and D. Chiba,
"Peculiar temperature dependence of electricfield effect on magnetic anisotropy in
Co/Pd/MgO system,"
Applied Physics Letters, vol. 108, 082403 (4 pages), August 2016.
DOI:10.1063/1.4961621

E. Hirayama, H. Sato, S. Kanai, F. Matsukura, and H. Ohno,
"Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis,"
IEEE Magnetics Letters, vol. 7, 3104004 (4 pages), July 2016.
DOI:10.1109/LMAG.2016.2568163

T. Dohi, S. Kanai, A. Okada, F. Matsukura, and H. Ohno,
"Effect of electricfield modulation of magnetic parameters on domain structure in MgO/CoFeB,"
AIP Advances, vol. 6, 075017 (4 pages), July 2016.
DOI:10.1063/1.4959905

S. Ishikawa, Eli. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"CurrentInduced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]Multilayers in Magnetic
Tunnel Junctions With Perpendicular Anisotropy,"
IEEE Transactions on Magnetics, vol. 52, 3400704 (4 pages), July 2016.
DOI:10.1109/TMAG.2016.2517098

H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno,
Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi,
M. Niwa, K. Ito, H. Ohno, and T. Endoh,
"Improvement of Thermal Tolerance of CoFeB/MgO
PerpendicularAnisotropy Magnetic Tunnel Junctions
by Controlling Boron Composition,"
IEEE Transactions on Magnetics, vol. 52, 3401104 (4 pages), July 2016.
DOI:10.1109/TMAG.2016.2518203

K. Watanabe, S. Fukami, H. Sato, F. Matsukura, and H. Ohno,
"Magnetic Properties of CoFeB.MgO Stacks With Different
BufferLayer Materials (Ta or Mo),"
IEEE Transactions on Magnetics, vol. 52, 3400904 (4 pages), July 2016.
DOI:10.1109/TMAG.2016.2514525

T. Endoh, H. Koike, S. Ikeda, T. Hanyu, and H. Ohno,
"An Overview of Nonvolatile Emerging Memories Spintronics for Working Memories,"
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, vol. 6, 109 (11 pages), June 2016.
DOI: 10.1109/JETCAS.2016.2547704

S. Souma, L. Chen, R. O. dowski, T. Sato, F. Matsukura, T. Dietl, H. Ohno, and T. Takahashi,
"Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As,"
Scientific Reports, vol. 6, 27266 (10 pages), June 2016.
DOI:10.1038/srep27266

S. Kanai, F. Matsukura, and H. Ohno,
"Electricfieldinduced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance,"
Applied Physics Letters, vol. 108, 192406 (4 pages), May 2016.
DOI:10.1063/1.4948763

S. Sato, H. Honjo, S. Ikeda, H. Ohno, T. Endoh, and M. Niwa,
"Study on initial current leakage spots in CoFeBcapped MgO tunnel barrier by conductive atomic force microscopy,"
Japanese Journal of Applied Physics, vol. 55, 04EE05 (7 pages), March 2016.
DOI:10.7567/JJAP.55.04EE05

T. Endoh, H. Koike, S. Ikeda, T. Hanyu, and H. Ohno,
"A 600μW ultralowpower associative processor for image pattern recognition employing magnetic tunnel junctionbased nonvolatile memories with autonomic intelligent powergating scheme,"
Japanese Journal of Applied Physics, vol. 55, 04EF15 (11 pages), March 2016.
DOI:10.7567/JJAP.55.04EF15

Y. Nakatani, M. Hayashi, S. Kanai, S. Fukami, and H. Ohno,
"Electric field control of Skyrmions in magnetic nanodisks,"
Applied Physics Letters, vol. 108, 152403 (6 pages), March 2016.
DOI:10.1063/1.4945738

S. Miyakozawa, L. Chen, F. Matsukura, and H. Ohno,
"Temperature dependence of inplane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li,"
Applied Physics Letters, vol. 108, 112404 (3 pages), March 2016.
DOI:10.1063/1.4944328

Z. Wang, M. Saito, K. P. McKenna, S. Fukami, H. Sato, S. Ikeda, H. Ohno, and Y. Ikuhara,
"AtomicScale Structure and Local Chemistry of CoFeB/MgO Magnetic Tunnel Junctions,"
Nano Letters, vol. 3, pp. 15301536, March 2016.
DOI:10.1021/acs.nanolett.5b03627

S. Fukami, T. Anekawa, C. Zhang, and H. Ohno,
"A spinorbit torque switching scheme with collinear magnetic easy axis and current configuration,"
Nature Nanotechnology, pp. 621625, March 2016.
DOI:10.1038/nnano.2016.29

S. Fukami, T. Iwabuchi, H. Sato, and H. Ohno,
"Currentinduced domain wall motion in magnetic nanowires with various widths down to less than 20 nm,"
Japanese Journal of Applied Physics, vol. 54, 04EN01 (4 pages), February 2016.
DOI:10.7567/JJAP.55.04EN01

S. Fukami, C. Zhang, S. DuttaGupta, A. Kurenkov, H. Ohno,
"Magnetization switching by spinorbit torque in an antiferromagnetferromagnet bilayer system,"
Nature Materials, vol. 15, pp. 535541, February 2016.
DOI:10.1038/nmat4566
2015

S. DuttaGupta, S. Fukami, C. Zhang, H. Sato, M. Yamanouchi, F. Matsukura,
and H. Ohno,
"Adiabatic spintransfertorqueinduced domain wall creep in a magnetic metal,"
Nature Physics, vol. 12 , 3593 (5 pages), December 2015.
DOI:10.1038/nphys3593

Y. Takeuchi, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"Temperature dependence of energy barrier in CoFeBMgO magnetic tunnel junctions with perpendicular easy axis,"
Applied Physics Letters, vol. 107, 152405 (3 pages), October 2015.
DOI:10.1063/1.4933256

Eli. C. I. Enobio, H. Sato, S. Fukami, F. Matsukura, and H. Ohno,
"CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeBMgO Interface Structures,"
IEEE Magnetics Letters, vol. 6, 5700303 (3 pages), September 2015.
DOI:10.1109/LMAG.2015.2475718

E. Hirayama, S. Kanai, J. Ohe, H. Sato, F. Matsukura, and H. Ohno,
"Electricfield induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction,"
Applied Physics Letters, vol. 107, 132404 (4 pages), September 2015.
DOI:10.1063/1.4932092

F. Matsukura and H. Ohno,
"Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate,"
Japanese Journal of Applied Physics, vol. 54, 098003 (2 pages), August 2015.
DOI:10.7567/JJAP.54.098003

L. Chen, F. Matsukura, and H. Ohno,
"ElectricField Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As,"
Physical Review Letters, vol. 115, 057204 (5 pages), July 2015.
DOI:10.1103/PhysRevLett.115.057204

S. D'Ambrosio, L. Chen, H. Nakayama, F. Matsukura, T. Dietl, and H. Ohno,
"Ferromagnetic resonance of Py deposited on ZnO grown by molecular beam epitaxy,"
Japanese Journal of Applied Physics, vol. 54, 093001 (4 pages), July 2015.
DOI:10.7567/JJAP.54.093001

C. Zhang, S. Fukami, H. Sato, F. Matsukura, and H. Ohno,
"Spinorbit torque induced magnetization switching in nanoscale Ta/CoFeB/MgO,"
Applied Physics Letters, vol. 107, 012401 (4 pages), July 2015.
DOI:10.1063/1.4926371

S. Fukami, J. Ieda, and H. Ohno,
"Thermal stability of a magnetic domain wall in nanowires,"
Physical Review B, vol. 91, 235401 (7 pages), June 2015.
DOI:10.1103/PhysRevB.91.235401

H. Nakayama, L. Chen, H.W. Chang, H. Ohno, and F. Matsukura,
"Inverse spin Hall effect in Pt/(Ga,Mn)As,"
Applied Physics Letters, vol. 106, 222405 (4 pages), June 2015.
DOI:10.1063/1.4922197

F. Matsukura, Y. Tokura and H. Ohno,
"Control of magnetism by electric fields,"
Nature Nanotechnology, vol. 10, 209 (12 pages), March 2015.
DOI:10.1038/nnano.2015.22

K. Watanabe, S. Ishikawa, H. Sato, S. Ikeda, M. Yamanouchi, S. Fukami, F. Matsukura, and H. Ohno,
"Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses,"
Japanese Journal of Applied Physics, vol. 54, 04EM04 (3 pages), March 2015.
DOI:10.7567/JJAP.54.04DM04

E. Hirayama, S. Kanai, K. Sato, M. Yamanouchi, H. Sato, S. Ikeda,
F. Matsukura, and H. Ohno,
"Inplane anisotropy of a nanoscaled magnetic tunnel junction with perpendicular magnetic easy axis,"
Japanese Journal of Applied Physics, vol. 54, 04EM03 (3 pages), February 2015.
DOI:10.7567/JJAP.54.04DM03

E. Hirayama, S. Kanai, H. Sato, F. Matsukura, and H. Ohno,
"Ferromagnetic resonance in nanoscale CoFeB/MgO magnetic tunnel junctions,"
Journal of Applied Physics, vol. 117, 17B708 (4 pages), February 2015.
DOI:10.1063/1.4908149

S. Kanai, F. Matsukura, S. Ikeda, AAPPS H. Sato, S. Fukami, and H. Ohno,
"Spintronics: from Basic Research to VLSI Application,"
AAPPS Bulletin, vol. 25, pp. 411, February 2015.

R. Hiramatsu, K. J. Kim, T. Taniguchi, T. Tono, T. Moriyama, S. Fukami, M. Yamanouchi, H. Ohno, Y. Nakatani, and T. Ono,
"Localized precessional mode of domain wall controlled by magnetic field and dc current,"
Applied Physics Express, vol. 8, 023003 (4 pages), January 2015.
DOI:10.7567/APEX.8.023003
2014

H. Jarollahi, N. Onizawa, V. Gripon, N. Sakimura, T. Sugibayashi, T. Endoh, H. Ohno, T. Hanyu, and W. J. Gross,
"A Nonvolatile Associative MemoryBased ContextDriven Search Engine Using 90 nm CMOS/MTJHybrid LogicinMemory Architecture,"
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 4, pp. 460474, December 2014.
DOI:10.1109/JETCAS.2014.2361061

S. Kanai, M. Gajek, D. C. Worledge, F. Matsukura,
and H. Ohno,
"Electric fieldinduced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages,"
Applied Physics Letters, vol. 105, 242409 (4 pages), December 2014.
DOI:10.1063/1.4904956

S. Kanai, M. Tsujikawa, Y. Miura, M. Shirai, F. Matsukura, and H. Ohno,
"Magnetic anisotropy in Ta/CoFeB/MgO investigated by xray magnetic circular dichroism and firstprinciples calculation,"
Applied Physics Letters, vol. 105, 222409 (4 pages), December 2014.
DOI:10.1063/1.4903296

H. Honjo, S. Fukami, K. Ishihara, K. Kinoshita, Y. Tsuji, A. Morioka,
R. Nebashi, K. Tokutome, N. Sakimura, M. Murahata, S. Miura,
T. Sugibayashi, N. Kasai, and H. Ohno,
"Material Stack Design With High Tolerance to ProcessInduced Damage in Domain Wall Motion Device,"
IEEE Transactions on Magnetics, vol. 50, 1401904 (4 pages), November 2014.
DOI:10.1109/TMAG.2014.2325019

S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno,
"Domain Wall Motion Device for Nonvolatile Memory and Logic  Size Dependence of Device Properties,"
IEEE Transactions on Magnetics, vol. 50, 3401006 (6 pages), November 2014.
DOI:10.1109/TMAG.2014.2321396

K. Kinoshita, H. Honjo, S. Fukami, H. Sato, K. Mizunuma, K. Tokutome,
M. Murahata, S. Ikeda, S. Miura, N. Kasai, and H. Ohno,
"Processinduced damage and its recovery for a CoFeB/MgO magnetic tunnel junction
with perpendicular magnetic easy axis,"
Japanese Journal of Applied Physics, vol. 53, 103001 (6 pages), September 2014.
DOI:10.7567/JJAP.53.103001

J. Torrejon, J. Kim, J. Sinha, S. Mitani, M. Hayashi, M. Yamanouchi, H. Ohno,
"Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavymetal underlayers,"
Nature Communications, vol. 5, 4655 (8 pages), August 2014.
DOI:10.1038/ncomms5655

H. Sato, E.C.I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, S. Kanai, F. Matsukura, and H. Ohno,
"Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11nm,"
Applied Physics Letters, vol. 105, 062403 (4 pages), August 2014.
DOI:10.1063/1.4892924

A. Okada, S. Kanai, M. Yamanouchi, S. Ikeda, F. Matsukura, and H. Ohno,
"Electricfield effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance,"
Applied Physics Letters, vol. 105, 052415 (4 pages), August 2014.
DOI:10.1063/1.4892824

H. W. Chang, S. Akita, F. Matsukura, and H. Ohno,
"Electricfield effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers,"
Journal of Crystal Growth, vol. 401, pp. 633635, July 2014.
DOI:10.1016/j.jcrysgro.2013.11.041

S. Miyakozawa, L. Chen, F. Matsukura, and H. Ohno,
"Properties of (Ga,Mn)As codoped with Li,"
Applied Physics Letters, vol. 104, 222408 (4 pages), June 2014.
DOI:10.1063/1.4881636

S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, H. Sato, F. Matsukura, and H. Ohno,
"Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin transfer
torque and electric fieldeffect,"
Applied Physics Letters, vol. 104, 212406 (3 pages), May 2014.
DOI:10.1063/1.4880720
 J.
Kim, J. Sinha, S. Mitani, M. Hayashi, S. Takahashi,
S. Maekawa, M. Yamanouchi, and H. Ohno, "Anomalous
temperature dependence of currentinduced torques in CoFeB/MgO heterostructures
with Tabased underlayers," Physical Review B, vol. 89, 174424 (8 pages),
May 2014. DOI:10.1103/PhysRevB.89.174424PRB
 M.
Hayashi, J. Kim, M. Yamanouchi, and H. Ohno, "Quantitative
characterization of the spinorbit torque using harmonic Hall voltage
measurements," Physical Review B, vol. 89, 144425 (15 pages), May 2014. DOI:10.1103/PhysRevB.89.144425
 H.
Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical
current and high thermal stability," Journal of the Magnetics Society of
Japan, vol. 38, pp. 5660, May 2014. DOI:10.3379/msjmag.1403R002
 Y.
Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami,
M. Yamanouchi, H. Ohno, K.J. Kim, T. Moriyama, and T. Ono, "Effect of spin Hall torque on currentinduced precessional domain
wall motion," Applied Physics Express, vol. 7, 033005 (4 pages), May 2014.
DOI:10.7567/APEX.7.033005
 D.
Kobayashi, Y. Kakehashi, K. Hirose, S. Onoda, T. Makino,
T. Ohshima, S. Ikeda, M. Yamanouchi, H. Sato, Eli I. C. Enobio, T. Endoh, and H. Ohno, "Influence of Heavy Ion Irradiation on
PerpendicularAnisotropy CoFeBMgO Magnetic Tunnel Junctions," IEEE
Transactions on Nuclear Science, pp. 17101716, April 2014. DOI:10.1109/TNS.2014.2304738

K. Kinoshita, H. Honjo, S. Fukami, R. Nebashi, K. Tokutome, M. Murahata, S. Miura, N. Kasai, Ikeda, and H. Ohno,
"Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion,"
Japanese Journal of Applied Physics, vol. 53, 03DF03 (6 pages), March 2014.
DOI:10.7567/JJAP.53.03DF03
 T.
Dietl and H. Ohno, "Dilute ferromagnetic semiconductors: Physics and
spintronic structures," Reviews of Modern Physics, vol. 86, 187 (65
pages), March 2014. DOI:10.1103/RevModPhys.86.187
 M.
Ono, J. Ishihara, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno, "Strain and
origin of inhomogeneous broadening probed by optically detected nuclear
magnetic resonance in a (110) GaAs quantum well," Physical Review B, vol.
89, 115308 (4 pages), March 2014. DOI:10.1103/PhysRevB.89.115308
 J.
Ishihara, Y. Ohno, and H. Ohno, "Direct mapping of photoexcited local
spins in a modulationdoped GaAs/AlGaAs wires," Japanese Journal of Applied
Physics, vol. 53, 04EM04 (3 pages), March 2014. DOI:10.7567/JJAP.53.04EM04

N. Sakimura, Y. Tsuji, R. Nebashi, H. Honjo, A. Morioka,
K. Ishihara, K. Kinoshita, S. Fukami, S. Miura, N.
Kasai, T. Endoh, H. Ohno, T. Hanyu, T. Sugibayashi, "A 90nm
20MHz Fully Nonvolatile Microcontroller for StandbyPowerCritical
Applications," 2014 IEEE International SolidState Circuits Conference,
vol. 10.5, 184 (3 pages), February. 2014. DOI:10.1109/ISSCC.2014.6757392
 S.
Fukami, M. Yamanouchi, Y. Nakatani, K.J. Kim, T. Koyama, D. Chiba, S. Ikeda,
N. Kasai, T. Ono, and H. Ohno, "Distribution of critical current density
for magnetic domain wall motion," Journal of Applied Physics, vol. 115,
17D508 (3 pages), February 2014. DOI:10.1063/1.4866394
 S.
Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H.
Ohno, "Co/Pt multilayerbased magnetic tunnel junctions with a CoFeB/Ta
insertion layer," Journal of Applied Physics, vol. 115, 17C719 (3 pages),
February 2014. DOI:10.1063/1.4862724
 H.
Sato, S. Ikeda, S. Fukami, H. Honjo, S. Ishikawa, M. Yamanouchi, K. Mizunuma, F. Matsukura, and H. Ohno, "Co/Pt
multilayer based reference layers in magnetic tunnel junctions for nonvolatile
spintronics VLSIs," Japanese Journal of Applied Physics, vol. 53, 04EM02 (3
pages), February 2014. DOI:10.7567/JJAP.53.04EM02
 C.
Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura and H. Ohno,
"Magnetization reversal induced by inplane current in Ta/CoFeB/MgO
structures with perpendicular magnetic easy axis," Journal of Applied Physics,
vol. 115, 17C714 (3 pages), January 2014. DOI:10.1063/1.4863260
 L.
Chen, S. Ikeda, F. Matsukura, and H. Ohno, "DC voltages in Py
and Py/Pt under ferromagnetic resonance," Applied Physics Express, vol. 7,
013002 (4 pages), January 2014. DOI:10.7567/APEX.7.013002
 J.
Ishihara, Y. Ohno, and H. Ohno, "Direct imaging of gatecontrolled
persistent spin helix state in a modulationdoped GaAs/AlGaAs quantum
well," Applied Physics Express, vol. 7, 013001 (4 pages), January 2014. DOI:10.7567/APEX.7.013001
 S.
Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno, "Electric FieldInduced Magnetization Switching
in CoFeBMgOStatic Magnetic Field Angle Dependence," IEEE Transactions on
Magnetics, vol. 50, 4200103 (3 pages), January 2014. DOI:10.1109/TMAG.2013.2278559
2013
 S.
Fukami, M. Yamanouchi, K.J. Kim, T. Suzuki, N. Sakimura, D. Chiba, S. Ikeda,
T. Sugibayashi, N. Kasai, T. Ono, and H. Ohno, "20nm magnetic domain wall
motion memory with ultralowpower operation," Electron Devices Meeting
(IEDM), pp. 3.2.13.2.4, December 2013. DOI:10.1109/IEDM.2013.6724550
 H.
Sato, T. Yamamoto, M. Yamanouchi, S. Ikeda, S. Fukami, K. Kinoshita, F.
Matsukura, N. Kasai, and H. Ohno, "Comprehensive study of CoFeBMgO
magnetic tunnel junction characteristics with single and doubleinterface
scaling down to 1X nm," Electron Devices Meeting (IEDM), pp. 3.2.13.2.4, December 2013. DOI:10.1109/IEDM.2013.6724550
 C.
Zhang, M. Yamanouchi, H. Sato, S. Fukami, S. Ikeda, Fumihiro
Matsukura, and H. Ohno, "Magnetotransport measurements of current
induced effective fields in Ta/CoFeB/MgO," Applied Physics Express, vol.
103, 262407 (3 pages), December 2013.
DOI:10.1063/1.4859656
 E.
C. I. Enobio, K. Ohtani, Y. Ohno, and H. Ohno, "Detection
and measurement of electroreflectance on quantum cascade laser device using
Fourier transform infrared microscope," Applied Physics Letters, vol. 103,
231106 (4 pages), December 2013. DOI:10.1063/1.4839421
 M. Kawaguchi, K. Shimamura, S. Fukami, F. Matsukura, H.
Ohno, T. Moriyama, D. Chiba, and T. Ono, "CurrentInduced
Effective Fields Detected by Magnetotrasport Measurements," Applied
Physics Express, vol. 6, 113002 (4 pages), October 2013. DOI:10.7567/APEX.6.113002
 D.
Chiba, T. Ono, F. Matsukura, and H. Ohno, "Electric field control of
thermal stability and magnetization switching in (Ga,Mn)As," Applied
Physics Letters, vol. 103, 142418 (4 pages), October 2013. DOI:10.1063/1.4821778

H. W. Chang, S. Akita, F. Matsukura, and H. Ohno, "Hole concentration
dependence of the Curie temperature of (Ga,Mn)Sb in a
fieldeffect structure," Applied Physics Letters, vol. 103, 142402 (4
pages), September 2013.
DOI:10.1063/1.4823592
 S.
Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno, "Depinning probability of a
magnetic domain wall in nanowires by spinpolarized currents," Nature
Communications, vol. 4, 2293 (6 pages), August 2013. DOI:10.1038/ncomms3293

S. Kanai, Y. Nakatani, M. Yamanouchi, S. Ikeda, F. Matsukura, H. Ohno,
"Inplane magnetic field dependence of electric fieldinduced magnetization switching,"
Applied Physics Letters, vol. 103, 072408 (4 pages), August 2013.
DOI:10.1063/1.4818676

H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis,"
IEEE Transactions on Magnetics, vol. 49, 4437 (4 pages), July 2013.
DOI:10.1109/TMAG.2013.2251326

S. Fukami, H. Sato, M. Yamanouchi, S. Ikeda, and H. Ohno,
"CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition,"
Applied Physics Express, vol. 6, 073010 (3 pages), July 2013.
DOI:10.7567/APEX.6.073010

L. Chen, F. Matsukura, and H. Ohno,
"Directcurrent voltages in (Ga,Mn)As structures induced by ferromagnetic resonance,"
Nature Communications, vol. 4, 3055 (6 pages), June 2013.
DOI:10.1038/ncomms3055

K.J. Kim, R. Hiramatsu, T. Koyama, K. Ueda, Y. Yoshimura, D. Chiba,
K. Kobayashi, Y. Nakatani, S. Fukami, M. Yamanouchi, H. Ohno, H. Kohno, G. Tatara, and T. Ono,
"Twobarrier stability that allows lowpower operation in currentinduced domainwall motion,"
Nature Communications, vol. 4, 3011 (6 pages), June 2013.
DOI:10.1038/ncomms3011

J. Sinha, M. Hayashi, A. J. Kellock, S. Fukami, M. Yamanouchi, H. Sato, S. Ikeda, S. Mitani, S.H. Yang, S. S. P. Parkin, and H. Ohno,
"Enhanced interface perpendicular magnetic anisotropy in TaCoFeBMgO using nitrogen doped Ta underlayers,"
Applied Physics Letters, vol. 102, 242405 (4 pages), June 2013.
DOI:10.1063/1.4811269

S. Fukami, M. Yamanouchi, H. Honjo, K. Kinoshita, K. Tokutome, S. Miura, S. Ikeda, N. Kasai, and H. Ohno,
"Electrical endurance of Co/Ni wire for magnetic domain wall motion device,"
Applied Physics Letters, vol. 102, 222410 (4 pages), June 2013.
DOI:10.1063/1.4809734

M. Yamanouchi, L. Chen, J. Kim, M. Hayashi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno,
"Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridiumdoped copper,"
Applied Physics Letters, vol. 102, 212408 (4 pages), May 2013.
DOI:10.1063/1.4808033

J. Ishihara, M. Ono, Y. Ohno, and H. Ohno,
"A strong anisotropy of spin dephasing time of quasione dimensional electron gas in modulationdoped GaAs/AlGaAs wires,"
Applied Physics Letters, vol. 102, 212402 (4 pages), May 2013.
DOI:10.1063/1.4807171

K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, and H. Ohno,
" Size Dependence of Magnetic Properties of Nanoscale CoFeBMgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance,"
Applied Physics Express, vol. 6, 063002 (3 pages), May 2013.
DOI:10.7567/APEX.6.063002

S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"Magnetic properties of MgO[Co/Pt] multilayers with a CoFeB insertion layer,"
Journal of Applied Physics, vol. 113, 17C721 (3 pages), April 2013.
DOI:10.1063/1.4798499

H. Ohno,
"Bridging semiconductor and magnetism,"
Journal of Applied Physics, vol. 113, 136509 (5 pages), March 2013.
DOI:10.1063/1.4795537

M. Ono, J. Ishihara, G. Sato, Y. Ohno, and H. Ohno,
"Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field,"
Applied Physics Express, vol. 6, 033002 (3 pages), February 2013.
DOI:10.7567/APEX.6.033002

L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, and A. Hirohata,
"Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films,"
Physical Review B, vol. 87, 022401 (5 pages), January 2013.
DOI:10.1103/PhysRevB.87.024401
2012

J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani and H. Ohno,
"Layer thickness dependence of the currentinduced effective field vector in TaCoFeBMgO,"
Nature Materials, vol. 12, pp. 240245, December 2012.
DOI:10.1038/NMAT3522

S. Ikeda, H. Sato, M. Yamanouchi, H. Gan, K. Miura, K. Mizunuma, S. Kanai, S. Fukami, F. Matsukura, N. Kasai and H. Ohno,
"RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI,"
SPIN, vol. 2, 1240003 (12 pages), December 2012.
DOI:10.1142/S2010324712400036

A. A. Greer, A. X. Gray, S. Kanai, A. M. Kaiser, S. Ueda, Y. Yamashita, C. Bordel, G. Palsson, N. Maejima, S.H. Yang, G. Conti, K. Kobayashi, S. Ikeda, F. Matsukura, H. Ohno, C. M. Schneider, J. B. Kortright, F. Hellman, and C. S. Fadley,
"Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standingwave hard xray photoemission,"
Applied Physics Letters, vol. 101, 202402 (4 pages), November 2012.
DOI:10.1063/1.4766351

S. Ikeda, R. Koizumi, H. Sato, M. Yamanouchi, K. Miura, K. Mizunuma, H. Gan, F. Matsukura, and H. Ohno ,
"Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures,"
IEEE Transactions on Magnetics, vol. 48, 3829 (4 pages), October 2012.
DOI:10.1109/TMAG.2012.2203588

S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, and H. Ohno,
"Electric fieldinduced magnetization reversal in a perpendicularanisotropy CoFeBMgO magnetic tunnel junction,"
Applied Physics Letters, vol. 101, 122403 (3 pages), September 2012.
DOI:10.1063/1.4753816

D. Markó, T. Devolder, K. Miura, K. Ito, JooVon Kim, C. Chappert, S. Ikeda, and H. Ohno,
"Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars,"
Journal of Applied Physics, vol. 112, 053922 (4 pages), September 2012.
DOI:10.1063/1.4751025

P. Das, A. Bajpai, Y. Ohno, H. Ohno, and J. Müller,
"On the influence of nanometerthin antiferromagnetic surface layer on ferromagnetic CrO2,"
Journal of Applied Physics, vol. 112, 053921 (4 pages), September 2012.
DOI:10.1063/1.4751350

K. Kinoshita, T. Yamamoto, H. Honjo, N. Kasai, S. Ikeda, and H. Ohno,
"Damage Recovery by Reductive Chemistry after MethanolBased Plasma Etch to Fabricate Magnetic Tunnel Junctions,"
Japanese Journal of Applied Physics, vol. 51, 08HA01 (6 pages), August 2012.
DOI:10.1143/JJAP.51.08HA01
 H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"Perpendicularanisotropy CoFeBMgO magnetic tunnel junctions with
a MgO/CoFeB/Ta/CoFeB/MgO recording structure," Applied Physics Letters,
vol. 101, 022414 (4 pages), July 2012. DOI:10.1063/1.4736727

K.J. Kim, D. Chiba, K. Kobayashi, S. Fukami, M. Yamanouchi, H. Ohno, S.G. Je, S.B. Choe, and T. Ono,
"Observation of magnetic domainwall dynamics transition in Co/Ni
multilayered nanowires,"
Applied Physics Letters, vol. 101, 022407 (4 pages), July 2012.
DOI:10.1063/1.4733667
 S. Fukami, N. Ishiwata, N. Kasai, M. Yamanouchi, H. Sato, S. Ikeda, and H. Ohno, "Scalability Prospect
of ThreeTerminal Magnetic DomainWall Motion Device," IEEE Transactions
on Magnetics, vol. 48, 7 (6 pages), July 2012. DOI:10.1109/TMAG.2012.2187792
 E. C. I. Enobio, H. Sato, K. Ohtani, Y. Ohno, and H.
Ohno , "Photocurrent Measurements on a Quantum Cascade Laser Device
by Fourier Transform Infrared Microscope," Japanese Journal of Applied
Physics, vol. 51, 06FE15 (3 pages), June 2012. DOI:10.1143/JJAP.51.06FE15

M. Ghali, K. Ohtani, Y. Ohno, and H. Ohno, "VerticalElectricalFieldInduced Control of the Exciton
Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of PolarizationEntangled Photons,"
Japanese Journal of Applied Physics, vol. 51, 06FE14 (3 pages), June 2012. DOI:0.1143/JJAP.51.06FE14
 M. Kawaguchi, K. Shimamura, S. Ono, S. Fukami, F.
Matsukura, H. Ohno, D. Chiba, and T. Ono, "Electric Field Effect on Magnetization of an Fe Ultrathin Film," Applied Physics
Express, vol. 5, 063007 (3 pages), June 2012. DOI:10.1143/APEX.5.063007
 Y. Yoshimura, T. Koyama, D. Chiba, Y. Nakatani, S. Fukami,
M. Yamanouchi, H. Ohno, and Teruo Ono, "CurrentInduced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire
under InPlane Magnetic Fields," Applied Physics Express, vol. 5, 063001 (3 pages), May 2012. DOI:10.1143/APEX.5.063001
 M. Hayashi, M. Yamanouchi, S. Fukami, J. Sinha,
S. Mitani, and H. Ohno, "Spatial control of magnetic anisotropy
for current induced domain wall injection in perpendicularly magnetized
CoFeBMgO nanostructures," Applied Physics Letters, vol. 100, 192411
(4 pages), May 2012. DOI:10.1063/1.4711016
 L. Li, Y. Guo, X. Y. Cui, R. Zheng, K. Ohtani, C. Kong, A. V. Ceguerra,
M. P. Moody, J. D. Ye, H. H. Tan, C. Jagadish, Hui Liu, C. Stampfl, H.
Ohno, S. P. Ringer, and F. Matsukura, "Magnetism of Codoped ZnO epitaxially
grown on a ZnO substrate," Physical Review B, vol. 85, 174430 (8 pages),
May 2012. DOI:10.1103/PhysRevB.85.174430
 A. Brataas, A. D. Kent, and H. Ohno, "Currentinduced torques
in magnetic materials," Nature Materials, vol. 11 372 (10 pages), May 2012. DOI:10.1038/nmat3311
 S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, H. D. Gan, S. Ikeda,
and H. Ohno, "Transmission electron microscopy study on the effect
of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed
at different temperatures," Journal of Applied Physics, vol. 111,
083922 (7 pages), April 2012. DOI:10.1063/1.4707964
 H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, and
H. Ohno, "CoFeB Thickness Dependence of Thermal Stability Factor in
CoFeB/MgO Perpendicular Magnetic Tunnel Junctions," IEEE Magnetics
Letters, vol. 3, 3000204 (4 pages), April 2012. DOI:10.1109/LMAG.2012.2190722
 T. Kawahara, K. Ito, R. Takemura, and H. Ohno, "Spintransfer torque
RAM technology: Review and prospect," Microelectronics Reliability,
vol. 52, pp. 613627, April 2012. DOI:10.1016/j.microrel.2011.09.028
 D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a Compact Nonvolatile FourInput Logic Element Using a Magnetic
Tunnel Junction and MetalOxideSemiconductor Hybrid Structure," Japanese Journal of Applied Physics, vol. 51, 04DM02 (5 pages), April 2012. DOI:10.1143/JJAP.51.04DM02
 H. Yamamoto, J. Hayakawa, K. Miura, K. Ito, H. Matsuoka, S. Ikeda, and
H. Ohno, "Dependence of magnetic anisotropy in Co20Fe60B20 free layers
on capping layers in MgObased magnetic tunnel junctions with inplane
easy axis," Applied Physics Express, vol. 5, 053002 (3 pages), April
2012. DOI:10.1143/APEX.5.053002
 S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh,
H. Ohno, and T. Hanyu, "Design of a 270psaccess 7transistor/2magnetictunneljunction cell circuit
for a highspeedsearch nonvolatile ternary contentaddressable memory," Journal of Applied Physics, vol. 111, 07E336 (3 pages), March 2012. DOI:10.1063/1.3677875
 H. Honjo, S. Fukami, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T.
Sugibayashi, N. Kasai and H. Ohno, "Magnetic tunneling junction with
Fe/NiFeB free layer for magnetic logic circuits," Journal of Applied
Physics, vol. 111, 07C709 (4 pages), March 2012. DOI:10.1063/1.3675268
 H. Honjo, S. Fukami, T. Suzuki, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura,
T. Sugibayashi, N. Kasai and H. Ohno, "Domainwallmotion cell with
perpendicular anisotropy wire and inplane magnetic tunneling junctions,"
Journal of Applied Physics, vol. 111, 07C903 (4 pages), February 2012.
DOI:10.1063/1.3671437

M. Kodzuka, T. Ohkubo, K. Hono, S. Ikeda, H. D. Gan, and H. Ohno, "Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudospinvalve magnetic tunnel junctions,
" Journal of Applied Physics, vol. 111, 043913 (4 pages), February 2012. DOI:10.1063/1.3688039
 M. Ghali, K. Ohtani, Y. Ohno and H. Ohno, "Generation
and control of polarizationentangled photons from GaAs island quantum
dots by an electric field," Nature Communications, vol. 3, 661 (6
pages), February 2012. DOI:10.1038/ncomms1657
 D. Suzuki, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Sixinput lookup table circuit with 62% fewer transistors using nonvolatile
logicinmemory architecture with series/parallelconnected magnetic
tunnel junctions," Journal of Applied Physics, vol. 111, 07E318 (3 pages), February 2012. DOI:10.1063/1.3672411
 S. Matsunaga, A. Katsumata, M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Design of a NineTransistor/TwoMagneticTunnelJunctionCellBased
LowEnergy Nonvolatile Ternary ContentAddressable Memory," Japanese
Journal of Applied Physics, vol. 51, 02BM06 (5 pages), February 2012. DOI:10.1143/JJAP.51.02BM06
 F. Iga, Y. Yoshida, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "TimeResolved Switching Characteristic in Magnetic Tunnel Junction
with Spin Transfer Torque Write Scheme," Japanese Journal of Applied Physics, vol. 51, 02BM02 (5 pages), February 2012. DOI:10.1143/JJAP.51.02BM02
 T. Ohsawa, F. Iga, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "HighDensity and LowPower Nonvolatile Static Random Access Memory
Using SpinTransferTorque Magnetic Tunnel Junction," Japanese Journal of Applied Physics, vol. 51, 02BD01 (6 pages), February 2012. DOI:10.1143/JJAP.51.02BD01
 R. Takemura, T. Kawahara, K. Ono, K. Miura, H. Matsuoka, H. Ohno, "Highlyscalable disruptive reading and restoring scheme for Gbscale SPRAM
and beyond," SolidState Electronics, vol. 58, pp. 12, January 2011. DOI:10.1109/IMW.2010.5488324
 M. Hayashi, Y. Nakatani, S. Fukami, M. Yamanouchi,
S. Mitani and H. Ohno, "Domain wall dynamics driven by spin
transfer torque and the spinorbit field," Journal of Physics: Condensed Matter,
vol. 24, 024221 (9 pages), January 2012. DOI: 10.1088/09538984/24/2/024221
2011

H. D. Gan, H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, R. Koizumi, F. Matsukura, and H. Ohno, "Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions,
" Applied Physics Letters, vol. 99, 252507 (4 pages), December 2011. DOI:10.1063/1.3671669
 K. Miura, R. Sugano, M. Ichimura, J. Hayakawa, S. Ikeda,
H. Ohno, and S. Maekawa, "Reduction of intrinsic critical
current density under a magnetic field along the hard axis of a free layer
in a magnetic tunnel junction," Physical Review B, vol. 84, 174434
(5 pages), November 2011. DOI:10.1103/PhysRevB.84.174434

M. Yamanouchi, A. Jander, P. Dhagat, S. Ikeda, F. Matsukura, and H. Ohno,
"Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy,"
IEEE Magnetics Letters, vol. 2, 3000304 (4 pages), July 2011.
DOI:10.1109/LMAG.2011.2159484
 P. Das, F. Porrati, S. Wirth, A. Bajpai, Y. Ohno, H. Ohno, M. Huth, and
J. Muller, "Domain wall dynamics in a single CrO2 grain," Journal of Physics: Conference Series, vol. 303, 012056 (6
pages), July 2011. DOI:10.1088/17426596/303/1/012056
 H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, H. D. Gan, K. Mizunuma, R. Koizumi, F. Matsukura, and H. Ohno,
"Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions,"
Applied Physics Letters, vol. 99, 042501 (3 pages), July 2011.
DOI:10.1063/1.3617429

S. Matsunaga, M. Natsui, S. Ikeda, K. Miura, T. Endoh, H. Ohno, and T. Hanyu,
"Design and Fabrication of a OneTransistor/OneResistor Nonvolatile Binary ContentAddressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a FineGrained PowerGating Scheme,"
Japanese Journal of Applied Physics, vol. 50, 063004 (7 pages), June 2011.
DOI:10.1143/JJAP.50.063004

H. D. Gan, S.Ikeda, M. Yamanouchi, K. Miura, K. Mizunuma, J. Hayakawa, F. Matsukura, and H. Ohno,
"Tunnel Magnetoresistance Properties of Double MgOBarrier Magnetic Tunnel Junctions With Different FreeLayer Alloy Compositions and Structures,"
IEEE Transactions on Magnetics, vol. 47, 1567 (4 pages), June 2011.
DOI:10.1109/TMAG.2010.2104137

T. Devolder, L. Bianchini, K. Miura, K. Ito, JooVon Kim, P. Crozat, V. Morin, A. Helmer, C. Chappert, S. Ikeda, and H. Ohno,
"Spintorque switching window, thermal stability, and material parameters of MgO tunnel junctions,"
Applied Physics Letters, vol. 98, 162502 (3 pages), April 2011.
DOI:10.1063/1.3576937

J. Ishihara, M. Ono, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno,
"Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well,"
Japanese Journal of Applied Physics, vol. 50, 04DM03 (3 pages), April 2011.
DOI:10.1143/JJAP.50.04DM03

T. Suzuki, S. Fukami, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, and H. Ohno,
"Currentinduced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire,"
Applied Physics Letters, vol. 98, 142502 (3 pages), April 2011.
DOI:10.1063/1.3579155

M. Yamanouchi, R. Koizumi, S. Ikeda, H. Sato, K. Mizunuma, K. Miura, H. D. Gan, F. Matsukura, and H. Ohno,
"Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20MgO structure,"
Journal of Applied Physics, vol. 109, 07C712 (3 pages), March 2011.
DOI:10.1063/1.3554204

K. Mizunuma, S. Ikeda, H. Sato, M. Yamanouchi, H. D. Gan, K. Miura, H. Yamamoto, J. Hayakawa, F. Matsukura, and H. Ohno,
"Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgObased magnetic tunnel junctions with different stack structures,"
Journal of Applied Physics, vol. 109, 07C711 (3 pages), March 2011.
DOI:10.1063/1.3554092

S. Fukami, T. Suzuki, Y. Nakatani, N. Ishiwata, M. Yamanouchi, S. Ikeda, N. Kasai, and H. Ohno,
"Currentinduced domain wall motion in perpendicularly magnetized CoFeB nanowire,"
Applied Physics Letters, vol. 98, 082504 (3 pages), February 2011.
DOI:10.1063/1.3558917

K. Mizunuma, M. Yamanouchi, S. Ikeda, H. Sato, H. Yamamoto, H. D. Gan, K. Miura, J. Hayakawa, F. Matsukura, and H. Ohno,
"Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgOBased Magnetic Tunnel Junctions
with Perpendicular Anisotropy CoFe/Pd Multilayers,"
Applied Physics Express, vol. 4, 023002 (3 pages), February 2011.
DOI:10.1143/APEX.4.023002

S. Kanai, M. Endo, S. Ikeda, F. Matsukura, and H. Ohno,
"Magnetic Anisotropy Modulation in Ta/ CoFeB/ MgO Structure by Electric Fields,"
Journal of Physics: Conference Series, vol. 266, 012092 (5 pages), January 2011.
DOI:10.1088/17426596/266/1/012092
2010
 M. Endo, F. Matsukura, H. Ohno, "Current induced effective magnetic
field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As,"
Applied Physics Letters, vol. 97, 222501 (3 pages), November 2010. DOI:10.1063/1.3520514

H. Ohno,
"A window on the future of spintronics,"
Nature Materials, vol. 9, pp. 952954, November 2010. DOI:10.1038/nmat2913

D. Chiba, F. Matsukura, and H. Ohno, "Electrically Defined Ferromagnetic Nanodots," Nano Letters, vol. 10, pp. 45054508, November 2010. DOI:10.1021/nl102379h
 A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko, A.
Ohtomo, and M. Kawasaki, "Observation of the fractional quantum Hall
effect in an oxide," Nature Materials, vol. 9, pp. 889893, November
2010. DOI:10.1038/NMAT2874
 M. Kohda, J. Ogawa, J. Shiogai, F. Matsukura, Y. Ohno, H. Ohno, J. Nitta,
"Width and temperature dependence of lithographyinduced magnetic
anisotropy in (Ga,Mn)As wires," Physica E, vol. 42, pp. 26852689,
October 2010. DOI:10.1016/j.physe.2009.12.019
 Y. Nishitani, M. Endo, F. Matsukura, H. Ohno, "Magnetic anisotropy
in a ferromagnetic (Ga,Mn)Sb thin film," Physica E, vol. 42, pp. 26812684,
October 2010. DOI:10.1016/j.physe.2009.12.054
 J. Misuraca, J. Trbovic, J. Lu, J. Zhao, Y. Ohno, H. Ohno, P. Xiong, and
S. V. Molnﾃ｡r, "Bandtail shape and transport near the metalinsulator
transition in Sidoped Al0.3Ga0.7As," Physical Review B, vol. 81,
045208 (6 pages), September 2010. DOI:10.1103/PhysRevB.82.125202

S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, "A perpendicularanisotropy CoFeBMgO magnetic tunnel junction,
" Nature Materials, vol. 9, pp. 721724, August 2010. DOI:10.1038/NMAT2804

S. Matsuzaka, Y. Ohno, and H. Ohno,
"Detection of local electron and nuclear spin dynamics by timeresolved Kerr microscopy,"
Physica E, vol. 42, pp. 27022706 (5 pages), August 2010.
DOI:10.1016/j.physe.2010.08.006
 A. Kanda, A. Suzuki, F. Matsukura, and H. Ohno, "Domain wall creep
in (Ga,Mn)As," Applied Physics Letters, vol. 97, 032504 (3 pages),
July 2010. DOI:10.1063/1.3467048

M. Endo, S. Kanai, S. Ikeda, F. Matsukura, and H. Ohno,
"Electricfield effects on thickness dependent magnetic anisotropy of sputtered MgO/Co_{40}Fe_{40}B_{20}/Ta structures," Applied Physics Letters, vol. 96, 212503 (3 pages),
May 2010. DOI:10.1063/1.3429592

H. D. Gan, S. Ikeda, W. Shiga, J. Hayakawa, K. Miura, H. Yamamoto, H. Hasegawa, F. Matsukura, T. Ohkubo, K. Hono, and H. Ohno,
"Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions,"
Applied Physics Letters, vol. 96, 192507 (3 pages), May 2010. DOI:10.1063/1.3429594

D. Chiba, Y. Nakatani, F. Matsukura, and H. Ohno,
"Simulation of magnetization switching by electricfield manipulation of magnetic anisotropy,"
Applied Physics Letters, vol. 96, 192506 (3 pages), May 2010. DOI:10.1063/1.3428959

T. Endoh, F. Iga, S. Ikeda, K. Miura, J. Hayakawa, M. Kamiyanagi, H. Hasegawa, T. Hanyu, and H. Ohno,
"The Performance of Magnetic Tunnel Junction Integrated on the BackEnd Metal Line of Complimentary MetalOxideSemiconductor Circuits,"
Japanese Journal of Applied Physics, vol. 49, 04DM06 (5 pages), April 2010. DOI:10.1143/JJAP.49.04DM06

S. Matsunaga, M. Natsui, K. Hiyama, T. Endoh, H. Ohno, and T. Hanyu,
"FineGrained PowerGating Scheme of a MetalOxideSemiconductor and MagneticTunnelJunctionHybrid BitSerial Ternary ContentAddressable Memory,"
Japanese Journal of Applied Physics, vol. 49, 04DM05 (5 pages), April 2010. DOI:10.1143/JJAP.49.04DM05

K. Mizunuma, S. Ikeda, H. Yamamoto, H. D. Gan, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, H. Ohno,
"CoFeB inserted perpendicular magnetic tunnel junctions with CoFe/Pd multilayers for high tunnel magnetoresistance ratio,"
Japanese Journal of Applied Physics, vol. 49, 04DM04 (4 pages), April 2010. DOI:10.1143/JJAP.49.04DM04

R. Takemura, T. Kawahara, K. Miura, H. Yamamoto, J. Hayakawa, N. Matsuzaki, K. Ono, M. Yamanouchi, K. Ito, H. Takahashi,
S. Ikeda, H. Hasegawa, H. Matsuoka, and H. Ohno,
"A 32Mb SPRAM With 2T1R Memory Cell, Localized BiDirectional Write Driver and '1'/'0' DualArray Equalized Reference Scheme,"
IEEE Journal of SolidState Circuits, vol. 45, pp. 869879, April 2010. DOI:10.1109/JSSC.2010.2040120
 S. R. Dunsiger, J. P. Carlo, T. Goko, G. Nieuwenhuys, T. Prokscha, A. Suter,
E. Morenzoni, D. Chiba, Y. Nishitani, T. Tanikawa, F. Matsukura, H. Ohno,
J. Ohe, S. Maekawa, and Y. J. Uemura, "Spatially homogeneous ferromagnetism
of (Ga, Mn)As," Nature Materials, vol. 9, pp. 299303, April 2010.
DOI:10.1038/NMAT2715
 T. Takahashi, S. Matsuzaka, Y. Ohno, and H. Ohno, "Optical detection
of zerofield spin precession of high mobility twodimensional electron
gas in a gated GaAs/AlGaAs quantum well," Physica E, vol. 42, pp.
26092701, March 2010. DOI:10.1016/j.physe.2010.03.026

D. Chiba, A. Werpachowska, M. Endo, Y. Nishitani, F. Matsukura, T. Dietl,
and H. Ohno, "Anomalous Hall effect in fieldeffect structures of (Ga,Mn)As,"
Physical Review Letters, vol. 104, 106601 (4 pages), March 2010. DOI:10.1103/PhysRevLett.104.106601

S. Marcet, K. Ohtani, and H. Ohno, "Vertical electric field tuning of
the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot,"
Applied Physics Letters, vol. 96, 101117 (3 pages), March 2010.
DOI:10.1063/1.3360212

M. Ono, H. Kobayashi, S. Matsuzaka, Y. Ohno, and H. Ohno,
"Gate voltage dependence of nuclear spin relaxation in an impuritydoped semiconductor quantum well,"
Applied Physics Letters, vol. 96, 071907 (3 pages), February 2010.
DOI:10.1063/1.3309687
 X. Kozina, S. Ouardi, B. Balke, G. Stryganyuk, G. H. Fecher, C. Felser,
S. Ikeda, H. Ohno, and E. Ikenaga, " A nondestructive analysis of the
B diffusion in TaCoFeBMgOCoFeBTa magnetic tunnel junctions by hard
xray photoemission," Applied Physics Letters, vol. 96, 072105 (3
pages), February 2010. DOI:10.1063/1.3309702

Y. Nishitani, D. Chiba, M. Endo, M. Sawicki, F. Matsukura, T. Dietl, and H. Ohno, "Curie temperature versus hole concentration in fieldeffect structures of (Ga,Mn)As,"
Physical Review B, vol. 81, 045208 (8 pages), January 2010.
DOI:10.1103/PhysRevB.81.045208
 M. Endo, D. Chiba, H. Shimotani, F. Matsukura, Y. Iwasa, and H. Ohno, "Electric
double layer transistor with a (Ga, Mn)As channel," Applied Physics
Letters, vol. 96, 022515 (3 pages), January 2010. DOI:10.1063/1.3277146

M. Ono, S. Matsuzaka, Y. Ohno, and H. Ohno,
"Gate voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well,"
Journal of Superconductivity and Novel Magnetism, vol. 23, 131 (3 pages), January 2010.
DOI:10.1007/s1094800905684

S. Matsuzaka, Y. Ohno, and H. Ohno,
"Scanning Kerr Microscopy of the Spin Hall Effect in nDoped GaAs with Various Doping Concentration,"
Journal of Superconductivity and Novel Magnetism, vol. 23, 37 (3 pages), January 2010.
DOI:10.1007/s1094800905586

M. Sawicki, D. Chiba, A. Korbecka, Y. Nishitani, J. A. Majewski, F. Matsukura, T. Dietl, and H. Ohno,
"Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As,"
Nature Physics, vol. 6, pp. 2225, January 2010.
DOI:10.1038/NPHYS1455
2009

K. Mizunuma, S. Ikeda, J. H. Park, H. Yamamoto, H. Gan, K. Miura, H. Hasegawa,
J. Hayakawa, F. Matsukura, and H. Ohno, "MgO barrierperpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers,"
Applied Physics Letters, vol. 95, 232516 (3 pages), December 2009.
DOI:10.1063/1.3265740

S. Matsuzaka, Y. Ohno, and H. Ohno, "Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy ,"
Physical Review B, vol. 80, 241305(R) (4 pages), December 2009.
DOI:10.1103/PhysRevB.80.241305

J. H. Park, S. Ikeda, H. Yamamoto, H. Gan, K. Mizunuma, K. Miura, H. Hasegawa, J. Hayakawa, K. Ito, F. Matsukura, and H. Ohno,
"Perpendicular magnetic tunnel junctions with CoFe/Pd multilayer electrodes and an MgO barrier,"
IEEE Transactions on Magnetics, vol. 45, pp. 34763479, September 2009.
DOI:10.1109/TMAG.2009.2023237

S. V. Karthik, Y. K. Takahashi, T. Ohkubo, K. Hono, S. Ikeda, and H. Ohno,
"Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures,"
Journal of Applied Physics, vol. 106, 023920 (5 pages), July 2009.
DOI:10.1063/1.3182817

T. Devolder, J. V. Kim, C. Chappert, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, and H. Ohno,
"Direct measurement of currentinduced fieldlike torque in magnetic tunnel junctions,"
Journal of Applied Physics, vol. 105, 113924 (5 pages), June 2009.
DOI:10.1063/1.3143033

K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno,
"Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells,"
Applied Physics Letters, vol. 94, 162104 (3 pages), April 2009.
DOI:10.1063/1.3118584

K. Ohtani, M. Belmoubarik, and H. Ohno,
"Intersubband optical transitions in ZnObased quantum wells grown by plasmaassisted molecular beam epitaxy,"
Journal of Crystal Growth, vol. 311, pp. 21762178, March 2009.
DOI:10.1016/j.jcrysgro.2008.09.134

M. Kodzuka, T. Ohkubo, K. Hono, F. Matsukura, and H. Ohno,
"3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film,"
Ultramicroscopy, vol. 109, pp. 644648, March 2009.
DOI:10.1016/j.ultramic.2008.11.011

Y. Nishitani, D. Chiba, F. Matsukura, and H. Ohno,
"ac susceptibility of (Ga, Mn)As probed by the anomalous Hall effect,"
Journal of Applied Physics, vol. 105, 07C516 (3 pages), March 2009.
DOI:10.1063/1.3072078

S. Matsunaga, K. Hiyama, A. Matsumoto, S. Ikeda, H. Hasegawa, K. Miura, J. Hayakawa, T. Endoh, H. Ohno, and T. Hanyu,
"Standbypowerfree compact ternary contentaddressable memory cell chip using magnetic tunnel junction devices,"
Applied Physics Express, vol. 2, 023004 (3 pages), February 2009.
DOI:10.1143/APEX.2.023004

T. T. Lin, K. Ohtani, and H. Ohno, "Thermally activated
ongitudinal optical phonon scattering of a 3.8 THz GaAs quantum cascade
laser ," Applied Physics Express, vol. 2, 022102 (3 pages), January
2009. DOI:10.1143/APEX.2.022102
2008

M. Sekikawa, K. Kiyoyama, H. Hasegawa, K. Miura, T. Fukushima, S. Ikeda, T. Tanaka, H. Ohno, and M. Koyanagi,
"A novel SPRAM (spintransfer torque RAM)based reconfigurable logic block for 3Dstacked reconfigurable spin processor,"
in digests of technical papers of 2008 IEEE International
Electron Devices Meeting (IEDM 2008), pp. 935937, December 2008.
DOI:10.1109/IEDM.2008.4796645

A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, and M. Kawasaki,
"Lowtemperature fieldeffect and magnetotransport properties in a ZnO based heterostructure with atomiclayerdeposited gate dielectric,"
Applied Physics Letters, vol. 93, 241905 (3 pages), December 2008.
DOI:10.1063/1.3035844

Y. Kondo, M. Ono, S. Matsuzaka, K. Morita, H. Sanada, Y. Ohno, and H. Ohno,
"Multipulse operation and optical detection of nuclear spin coherence
in a GaAs/AlGaAs quantum well," Physical Review Letters, vol. 101, 207601 (4 pages), November 2008.
DOI:10.1103/PhysRevLett.101.207601

D. Chiba, M. Sawicki, Y. Nishitani, Y. Nakatani, F. Matsukura, and H. Ohno,
"Magnetization vector manipulation by electric fields,"
Nature, vol. 455, pp. 515518, September 2008.
DOI:10.1038/nature07318

Y. Pu, D. Chiba, F. Matsukura, H. Ohno, and J. Shi,
" Mott relation for anomalous Hall and Nernst effects in Ga_{1x}Mn_{x}As ferromagnetic semiconductors,"
Physical Review Letters, vol. 101, 117208 (4 pages), September 2008.
DOI:10.1103/PhysRevLett.101.117208

S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno,
"Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudospinvalves annealed at high temperature,"
Applied Physics Letters, vol. 93, 082508 (3 pages), August 2008.
DOI:10.1063/1.2976435

S. Matsunaga, J. Hayakawa, S. Ikeda, K. Miura, H. Hasegawa, T. Endoh, H. Ohno, and T. Hanyu,
"Fabrication of a nonvolatile full adder based on logicinmemory architecture using magnetic tunnel junctions,"
Applied Physics Express, vol. 1, 091301 (3 pages), August 2008.
DOI:10.1143/APEX.1.091301

J. Hayakawa, S. Ikeda, K. Miura, M. Yamanouchi, Y. M. Lee, R. Sasaki, M. Ichimura, K. Ito, T. Kawahara, R. Takemura, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno,
"Currentinduced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeBbased synthetic ferrimagnetic free layers,"
IEEE Transactions on Magnetics, vol. 44, pp. 19621967, July 2008.
DOI:10.1109/TMAG.2008.924545

C. Gould, S. Mark, K. Pappert, R. G. Dengel, J. Wenisch, R. P. Campion, A. W. Rushforth, D. Chiba, Z. Li, X. Liu, W. Van Roy, H. Ohno, J. K. Furdyna, B. Gallagher, K. Brunner, G. Schmidt, and L. W. Molenkamp,
"An extensive comparison of anisotropies in MBE grown (Ga, Mn)As material,"
New Journal of Physics, vol. 10, 055007 (10 pages), May 2008.
DOI:10.1088/13672630/10/5/055007

M. Belmoubarik, K. Ohtani, and H. Ohno, "Intersubband transitions in ZnO multiple quantum wells,"
Applied Physics Letters, vol. 92, 191906 (3 pages), May 2008.
DOI:10.1063/1.2926673

G. Ghosh, D. W. Steuerman, B. Maertz, K. Ohtani, Huaizhe Xu, H. Ohno, and D. D. Awschalom,
"Electrical control of spin coherence in ZnO,"
Applied Physics Letters, vol. 92, 162109 (3 pages), April 2008.
DOI:10.1063/1.2913049

M. Czapkiewicz, P. Zagrajek, J. Wrobel, G. Grabecki, F. Fronc, T. Dietl, Y. Ohno, S. Matsuzaka, and H. Ohno,
"0.7 anomaly and magnetotransport of disordered quantum wire,"
Europhysics Letters, vol. 82, 27003 (6 pages),
April 2008. DOI:10.1209/02955075/82/27003

O. B. Agafonov, T. Kita, H. Ohno, and R. J. Haug,
"Fine structure in magnetospectrum of vertical quantum dot,"
Physica E, vol. 40, pp. 16301632, April 2008.
DOI:10.1016/j.physe.2007.10.006

T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "Fabrication of a fewelectron In_{0.56}Ga_{0.44}As vertical quantum dot with an Al_{2}O_{3} gate insulator,"
Physica E. vol. 40, pp. 19301932, April 2008.
DOI:10.1016/j.physe.2007.08.140

S. Marcet, T. Kita, K. Ohtani, and H. Ohno,
"The effect of vertical electric fields on exciton fine structure of GaAs natural quantum dots,"
Physica E, vol. 40, pp. 20692071, April 2008.
DOI:10.1016/j.physe.2007.09.106

Y. Nishitani, D. Chiba, F. Matsukura, and H. Ohno,
"Electrical Curie temperature modulation in (Ga, Mn)As fieldeffect transistors with Mn composition from 0.027 to 0.2,"
Journal of Applied Physics, vol. 103, 07D139 (3 pages), April 2008.
DOI:10.1063/1.2838159

D. Chiba, K. M. Yu, W. Walukiewicz, Y. Nishitani, F. Matsukura, and H. Ohno,
"Properties of Ga_{1x}Mn_{x}As with high x (>0.1),"
Journal of Applied Physics, vol. 103, 07D136 (3 pages), April 2008.
DOI:10.1063/1.2837469

H. Ohno and T. Dietl,
"Spintransfer physics and the model of ferromagnetism in (Ga, Mn)As,"
Journal of Magnetism and Magnetic Materials, vol. 320, pp. 12931299, April 2008.
DOI:10.1016/j.jmmm.2007.12.016

T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, J. A. Katine, M. J. Carey, P. Crozat, J. V. Kim, C. Chappert, and H. Ohno,
"Electrical timedomain observation of magnetization switching induced by spin transfer in magnetic nanostructures,"
Journal of Applied Physics, vol. 103, 07A723 (6 pages), March 2008.
DOI:10.1063/1.2839341

T. Devolder, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, P. Crozat, N. Zerounian, JooVon Kim, C. Chappert, and H. Ohno,
"Singleshot timeresolved measurements of nanosecondscale spintransfer induced switching: stochastic versus deterministic aspects,"
Physical Review Letters, vol. 100, 057206 (4 pages), February 2008.
DOI:10.1103/PhysRevLett.100.057206

T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno,
"2 Mb SPRAM (SPinTransfer Torque RAM) with bitbybit bidirectional current write and parallelizingdirection current read,"
IEEE Journal of SolidState Circuits, vol. 43, pp. 109120, January 2008.
DOI:10.1109/JSSC.2007.909751

K. Ohtani, H. Ohnishi, and H. Ohno,
"Simultaneous lasing of interband and intersubband transitions in InAs/AlSb quantum cascade laser structures,"
Applied Physics Letters, vol. 92, 041102 (3 pages), January 2008.
DOI:10.1063/1.2838296
2007

T. Kita, D. Chiba, Y. Ohno, and H. Ohno,
"A fewelectron vertical In_{0.56}Ga_{0.44}As quantum dot with an insulating gate,"
Applied Physics Letters, vol. 91, 232101 (3 pages), December 2007.
(Top 20 most downloaded article(December 2007))
DOI:10.1063/1.2818712

T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno,
"2Mb SPRAM design: bidirectional current write and parallelizingdirection current read based on spintransfer torque switching,"
Physica Status Solidi A, vol. 204, pp. 39293933, December 2007.
DOI:10.1002/pssa.200777120

M. Yamanouchi, J. Ieda, F. Matsukura, S. E. Barnes, S. Maekawa, and H. Ohno,
"Universality classes for domain wall motion in the ferromagnetic semiconductor (Ga, Mn)As,"
Science, vol. 317, pp. 17261729, September 2007.
DOI:10.1126/science.1145516

T. Jungwirth, Jairo Sinova, A. H. MacDonald, B. L. Gallagher, V. Novﾃ｡k, K. W. Edmonds, A. W. Rushforth, R. P. Campion, C. T. Foxon, L. Eaves, E. Olejnfk, J. Maﾅ｡ek, S. R. Eric Yang, J. Wunderlich, C. Gould, L. W. Molenkamp, T. Dietl, and H. Ohno,
"Character of states near the Fermi level in (Ga, Mn)As: Impurity to valence band crossover,"
Physical Review B, vol. 76, 125206 (9 pages), September 2007.
DOI:10.1103/PhysRevB.76.125206

M. Endo, D. Chiba, Y. Nishitani, F. Matsukura, and H. Ohno,
"Channel thickness dependence of the magnetic properties in (Ga, Mn)As FET structures,"
Journal of Superconductivity and Novel Magnetism, vol. 20, pp. 409411, August 2007. DOI:10.1007/s1094800702427

M. Fukuda, M. Yamanouchi, F. Matsukura, and H. Ohno,
"Switching of tunnel magnetoresistance by domain wall motion in (Ga, Mn)Asbased magnetic tunnel junctions,"
Applied Physics Letters, vol. 91, 052503 (3 pages), July 2007.
DOI:10.1063/1.2767230

K. Ohtani, Y. Moriyasu, H. Ohnishi, and H. Ohno,
"Above roomtemperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12μ m,"
Applied Physics Letters, vol. 90, 261112 (3 pages), June 2007.
DOI:10.1063/1.2752771

Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno,
"Effect of electrode composition on the tunnel magnetoresistance of pseudospinvalve magnetic tunnel junction with a MgO tunnel barrier,"
Applied Physics Letters, vol. 90, 212507 (3 pages), May 2007.
DOI:10.1063/1.2742576

T. Dietl, H. Ohno, and F. Matsukura,
"Ferromagnetic semiconductor heterostructures for spintronics,"
IEEE Transactions on Electron Devices, vol. 54, No. 5, pp. 945954, May 2007.
DOI:10.1109/TED.2007.894622

S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, T. Hanyu, and H. Ohno,
"Magnetic tunnel junctions for spintronic memories and beyond,"
IEEE Transactions on Electron Devices, vol. 54, No. 5, 9911002 pages, May 2007.
DOI:10.1109/TED.2007.894617

K. Ohtani, K. Fujita, and H. Ohno,
"Roomtemperature InAs/AlSb quantumcascade laser operating at 8.9 ﾂｵm,"
Electronics Letters, vol. 43, pp. 520522, April 2007.
DOI:10.1049/el:20070251

D. Chiba, Y. Nishitani, F. Matsukura, and H. Ohno,
"Properties of Ga_{1x}Mn_{x}As with high Mn composition (x>0.1),"
Applied Physics Letters, vol. 90, 122503 (3 pages), March 2007.
DOI:10.1063/1.2715095

S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, and H. Ohno,
"Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgObarrier magnetic tunnel junctions,"
Journal of Magnetism and Magnetic Materials, vol. 310, pp. 19371939, March 2007.
DOI:10.1016/j.jmmm.2006.10.770

D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, and H. Ohno,
"Domain wall resistance in perpendicularly magnetized (Ga, Mn)As,"
Journal of Magnetism and Magnetic Materials, vol. 310, pp. 20782083, March 2007.
DOI:10.1016/j.jmmm.2006.10.1119

A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, and M. Kawasaki,
"Quantum Hall effect in polar oxide heterostructures,"
Science, vol. 315, pp. 13881391, March 2007.
DOI:10.1126/science.1137430

T. Kita, D. Chiba, Y. Ohno, and H. Ohno,
"(In, Ga)As gatedvertical quantum dot with an Al_{2}O_{3} insulator,"
Applied Physics Letters, vol. 90, 062102 (3 pages), February 2007.
DOI:10.1063/1.2437060

T. Kawahara, R. Takemura, K. Miura, J. Hayakawa, S. Ikeda, Y. Lee, R. Sasaki, Y. Goto, K. Ito, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno,
"2 Mb spintransfer torque RAM (SPRAM) with bitbybit bidirectional current write and parallelizingdirection current read,"
in digest of technical papers of 2007 IEEE International SolidState Circuits Conference (ISSCC 2007), pp. 480481, February 2007.
DOI:10.1109/ISSCC.2007.373503

H. J. Lee, D. Chiba, F. Matsukura, and H. Ohno,
"Effect of substrate temperature on the properties of heavily Mndoped GaAs,"
Journal of Crystal Growth, vol. 301302, pp. 264267, January 2007.
DOI:10.1016/j.jcrysgro.2006.11.155

H. Ohno,
"Physics and materials of spintronics in semiconductors,"
Physica Status Solidi (c), vol. 3, pp. 40574061, January 2007.
DOI:10.1002/pssc.200672893

T. Yamada, D. Chiba, F. Matsukura, S. Yakata, and H. Ohno,
"Magnetic anisotropy in (Ga, Mn)As probed by magnetotransport measurements,"
Physica Status Solidi (c), vol. 3, pp. 40864089, January 2007.
DOI:10.1002/pssc.200672877

T. Kita, M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno,
"Spin injection with three terminal device based on (Ga, Mn)As/n^{+}GaAs tunnel junction,"
Physica Status Solidi (c), vol. 3, pp. 41644167, January 2007.
DOI:10.1002/pssc.200672865
2006

J. Hayakawa, S. Ikeda, Y. M. Lee, F. Matsukura, and H. Ohno,
"Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions,"
Applied Physics Letters, vol. 89, 232510 (3 pages), December 2006.
DOI:10.1063/1.2402904

T. Dietl and H. Ohno,
"Engineering magnetism in semiconductors,"
Materials Today, vol. 9, pp. 1826, November 2006.
DOI:10.1016/S13697021(06)716911

D. Chiba, F. Matsukura, and H. Ohno,
"Electricfield control of ferromagnetism in (Ga,Mn)As," Applied Physics Letters, vol. 89,
162505 (3 pages), October 2006. DOI:10.1063/1.2362971

J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, and H. Ohno,
"Currentinduced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferromagnetic free layer,"
Japanese Journal of Applied Physics, vol. 45, pp. L1057L1060, October 2006.
DOI:10.1143/JJAP.45.L1057

J. Mﾃｼller, Y. Li, S. von Molnár, Y. Ohno, and H. Ohno,
"Singleelectron switching in Al_{x}Ga_{1x}As/GaAs Hall devices,"
Physical Review B, vol. 74, 125310 (7 pages), September 2006.
DOI:10.1103/PhysRevB.74.125310

H. Xu, K. Ohtani, M. Yamao, and H. Ohno,
"Surface morphologies of homoepitaxial ZnO on Zn and Opolar substrates by plasma assisted molecular beam epitaxy,"
Applied Physics Letters, vol. 89, 071918 (3 pages), August 2006.
DOI:10.1063/1.2337541

Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno,
"Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer,"
Applied Physics Letters, vol. 89, 042506 (3 pages), July 2006.
DOI:10.1063/1.2234720

M. Kohda, T. Kita, Y. Ohno, F. Matsukura, and H. Ohno,
"Bias voltage dependence of the electron spin injection studied in a threeterminal device based on a (Ga,Mn)As/n^{+}GaAs Esaki diode,"
Applied Physics Letters, vol. 89, 012103 (3 pages), July 2006.
DOI:10.1063/1.2219141

D. Chiba, F. Matsukura, and H. Ohno,
"Electrical magnetization reversal in ferromagnetic semiconductors,"
Journal of Physics D: Applied Physics, vol. 39, pp. R215R225, June 2006.
DOI:10.1088/00223727/39/13/R01. Physics

M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno,
"Effect of n^{+}GaAs thickness and doping density on spin injection of GaMnAs/n^{+}GaAs Esaki tunnel junction,"
Physica E, vol. 32, pp. 438441, May 2006.
DOI:10.1016/j.physe.2005.12.085

J. Mﾃｼller, S. von Molnár, Y. Ohno, and H. Ohno,
"Decomposition of 1/f noise in Al_{x}Ga_{1x}As/GaAs Hall devices,"
Physical Review Letters, vol. 96, 186601 (4 pages), May 2006.
DOI:10.1103/PhysRevLett.96.186601

M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno,
"Currentassisted domain wall motion in ferromagnetic semiconductors,"
Japanese Journal of Applied Physics, vol. 45, pp. 38543859, May 2006.
DOI: 10.1143/JJAP.45.3854

T. Sakaguchi, H. Choi, S. J. Ahn, T. Sugimura, M. Park, M. Oogane, H. Oh, J. Hayakawa, S. Ikeda, Y. M. Lee, T. Fukushima, T. Miyazaki, H. Ohno, and M. Koyanagi,
"Fabrication and evaluation of magnetic tunnel junction with MgO tunneling barrier,"
Japanese Journal of Applied Physics, vol. 45, pp. 32283232, April 2006.
DOI: 10.1143/JJAP.45.3228

S. Ikeda, J. Hayakawa, Y. M. Lee, T. Tanikawa, F. Matsukura, and H. Ohno,
"Tunnel magnetoresistance in MgObarrier magnetic tunnel junction with bccCoFe(B) and fccCoFe free layers,"
Journal of Applied Physics, vol. 99, pp. 08A907 (3 pages), April 2006.
DOI:10.1063/1.2176588

D. Chiba, T. Kita, F. Matsukura, and H. Ohno,
"Pulsewidth and magneticfield dependences of currentinduced magnetization switching in a (Ga, Mn)As magnetic tunnel junction,"
Journal of Applied Physics, vol. 99, 08G514 (3 pages), April 2006.
DOI:10.1063/1.2170063

H. Ohno, "Ferromagnetic semiconductors for spintronics,"
Physica B, vol. 376377, pp. 1921, April 2006.
DOI:10.1016/j.physb.2005.12.007

H. Xu, K. Ohtani, M. Yamao, and H. Ohno,
"Control of ZnO(0001)/Al_{2}O_{3}(1120) surface morphologies using plasmaassisted molecular beam epitaxy,"
Physica Status Solidi (b), vol. 243, pp. 773777, March 2006.
DOI:10.1002/pssb.200564657

D. Chiba, M. Yamanouchi, F. Matsukura, T. Dietl, and H. Ohno,
"Domainwall resistance in ferromagnetic (Ga, Mn)As,"
Physical Review Letters, vol. 96, 096602 (4 pages), March 2006.
DOI:10.1103/PhysRevLett.96.096602

M. Yamanouchi, D. Chiba, F. Matsukura, T. Dietl, and H. Ohno, "Velocity of domainwall motion induced by electrical current in the ferromagnetic semiconductor (Ga, Mn)As,"
Physical Review Letters, vol. 96, 096601 (4 pages), March 2006.
DOI:10.1103/PhysRevLett.96.096601

H. Sanada, Y. Kondo, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno,
"Optical pumpprobe measurements of local nuclear spin coherence in semiconductor quantum wells,"
Physical Review Letters, vol. 96, 067602 (4 pages), February 2006.
DOI:10.1103/PhysRevLett.96.067602

J. Nishii, A. Ohtomo, M. Ikeda, Y. Yamada, K. Ohtani, H. Ohno, and M. Kawasaki,
"Synthesis and characterization of MgCaO films as a lattice and balencematched gate dielectric for ZnO based fields effect transistor,"
Applied Surface Science, vol. 252, pp. 25072511, January 2006.
DOI:10.1016/j.apsusc.2005.06.040
2005

S. Ikeda, J. Hayakawa, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, and H. Ohno,
"Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering,"
Japanese Journal of Applied Physics, vol. 44, pp. L1422L1445, November 2005.
DOI:10.1143/JJAP.44.L1442

K. Ohtani, K. Fujita, and H. Ohno,
"Midinfrared InAs/AlGaSb superlattice quantumcascade lasers,"
Applied Physics Letters, vol. 87, 211113 (3 pages),
November 2005. DOI:10.1063/1.2136428

K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno, and H. Ohno,
"Strong anisotropic spin dynamics in narrow nInGaAs/AlGaAs (110) quantum wells,"
Applied Physics Letters, vol. 87, 171905 (3 pages), October 2005.
DOI:10.1063/1.2112193

C. Y. Hu, K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno,
"Spin precession of holes in Wurtzite GaN studied using timeresolved Kerr rotation technique,"
Physical Review B, vol. 72, 121203 (4 pages), September 2005.
DOI:10.1103/PhysRevB.72.121203

J. Nishii, A. Ohtomo, K. Ohtani, H. Ohno and M. Kawasaki,
"Highmobility fieldeffect transistors based on singlecrystalline ZnO channels,"
Japanese Journal of Applied Physics, vol. 44, pp. L1193L1195, September 2005.
DOI: 10.1143/JJAP.44.L1193

J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, H. Ohno,
"Currentdriven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions,"
Japanese Journal of Applied Physics, vol. 44, pp. L1267L1270, September 2005.
DOI: 10.1143/JJAP.44.L1267

J. Inoue and H. Ohno,
"Taking the Hall effect for a spin,"
Science, vol. 309, pp. 20042005, September 2005.
DOI:10.1126/science.1113956

G. Mihajlovic, P. Xiong, S. von Molánr, K. Ohtani, H. Ohno, M. Field, and G. J. Sullivan,
"Detection of single magnetic bead for biological applications using an InAs quantumwell microHall sensor,"
Applied Physics Letters, vol. 87, 112502 (3 pages), September 2005.
DOI:10.1063/1.2043238

Y. Sato, D. Chiba, F. Matsukura, and H. Ohno,
"Effect of GaAs intermediary layer thickness on the properties of (Ga,Mn)As trilayer structures,"
Journal of Superconductivity: Incorporating Novel Magnetism, vol. 18, pp. 345347, June 2005.
DOI:10.1007/s109480050008z

Y. Li, P. Xiong, S. von Molnár, Y. Ohno, and H. Ohno,
"Magnetization reversal in elongated Fe nanoparticles,"
Physical Review B, vol. 71, 214425 (6 pages), June 2005. DOI:10.1103/PhysRevB.71.214425

J. Hayakawa, H. takahashi, K. Ito, M. Fujimori, S. Heike, T. Hashizume, M. Ichimura, S. Ikeda, and H. Ohno,
"Currentdriven magnetization reversal in exchangebiased spinvalve nanopillars,"
Journal of Applied Physics, vol. 97, pp. 114321114323, June 2005.
DOI:10.1063/1.1927707

A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu and M. Kawasaki,
"Blue lightemitting diode based on ZnO,"
Japanese Journal of Applied Physics, vol. 44, pp. L643L645, May 2005.
DOI:10.1143/JJAP.44.L643

K. Ohtani, K. Fujita, and H. Ohno, "InAs quantum cascade lasers based on coupled quantum well structures,"
Japanese Journal of Applied Physics, vol. 44, pp. 25722574, April 2005.
DOI:10.1143/JJAP.44.2572

J. Müller, Y. Li, S. von Molnár, Y. Ohno, and H. Ohno,
"Lowfrequency noise in submicron GaAs/AlxGa1xAs Hall devices,"
Journal of Magnetism and Magnetic Materials, vol. 290291, pp. 11611164, April 2005.
DOI:10.1016/j.jmmm.2004.11.502

J. Hayakawa, S. Ikeda, F. Matsukura, H. Takahashi, and H. Ohno,
"Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature,"
Japanese Journal of Applied Physics, vol.44, pp. L587L589, April 2005.
DOI: 10.1143/JJAP.44.L587

H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno,
"Gate control of dynamic nuclear polarization in GaAs quantum wells,"
Physical Review Letters vol. 94, 097601 (4 pages), March 2005.
DOI:10.1103/PhysRevLett.94.097601
2004

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K.
Ohtani, S. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki,
"Repeated temperature modulation epitaxy for ptype doping and lightemitting
diode based on ZnO," Nature Materials, vol. 4, pp. 4246, December
2004. DOI:10.1038/nmat1284

Y. Li, C. Ren, P. Xiong, S. von Molánr, Y. Ohno, and H. Ohno,
"Modulation of noise in submicron GaAs/AlGaAs Hall devices by gating," Physical Review Letters, vol. 93, 246602 (4 pages),
December 2004. DOI:10.1103/PhysRevLett.93.246602

D. Chiba, Y. Sato, T. Kita, F. Matsukura, and H. Ohno "Currentdriven
magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As
tunnel junction," Physical Review Letters, vol. 93, 216602 (4 pages), November
2004. DOI:10.1103/PhysRevLett.93.216602

D. Chiba, M. Yamanouchi, F. Matsukura, and H. Ohno, "Control of magnetization
reversal in ferromagnetic semiconductors by electrical means," Journal
of Physics: Condensed Matter, vol. 16, pp. S5693S5696, November 2004.
DOI:10.1088/09538984/16/48/029

I. Suzuki, A. Ohtomo, A. Tsukazaki, F. Sato, J. Nishii, H. Ohno, and M.
Kawasaki, "Hall and fieldeffect mobilities of electrons accumulated
at a latticematched ZnO/ScAlMgO_{4} heterointerface," Advanced Materials, vol. 16, pp. 18871890, November
2004. DOI:10.1002/adma.200401018

J. Hayakawa, K. Ito, M. Fujimori, S. Heike, T. Hashizume, J. Steen, J.
Brugger and H. Ohno, "Currentdriven switching of exchange biased
spinvalve giant magnetoresistive naopillars using a conducting nanoprobe,"
Journal of Applied Physics, vol. 96, pp. 34403442, September 2004. DOI:10.1063/1.1769605

E. Abe, K. Sato, F. Matsukura, J. H. Zhao, Y. Ohno and H. Ohno, "Molecular
beam epitaxy and properties of Crdoped GaSb," Journal of Superconductivity,
vol. 17, pp. 349352, June 2004. DOI:10.1023/B:JOSC.0000034257.19841.be

K. Ohtani, K. Fujita and H. Ohno,"A low threshold current density
InAs/AlGaSb superlattice quantum cascade laser operating at 14 ﾂｵm,"
Japanese Journal of Applied Physics, vol. 43, pp. L879L881,
June 2004. DOI:10.1143/JJAP.43.L879

H. Ohno, "Ferromagnetic semiconductor heterostructures," Journal
of Magnetism and Magnetic Materials, vol. 272276, pp. 16, May 2004. DOI:10.1016/j.jmmm.2003.12.961

J. Hayakawa, M. Fujimoria, S. Heikea, M. Ishibashia, T. Hashizumea, K.
Ito and H. Ohno, "Electrical properties of the patterned Co/Cu/Co
submicron dots using a probe contact," Journal of Magnetism and Magnetic
Materials, vol. 272276, pp. E1443E1445, May 2004. DOI:10.1016/j.jmmm.2003.12.730

M. Yamanouchi, D. Chiba, F. Matsukura, and H. Ohno, "Currentinduced
domainwall switching in a ferromagnetic semiconductor structure,"
Nature, vol. 428, pp. 539542, April 2004. DOI:10.1038/nature02441

F. Matsukura, M. Sawicki, T. Dietl, D. Chiba and H.Ohno, "Magnetotransport
properties of metallic (Ga, Mn)As films with compressive and tensile strain,"
Physica E, vol. 21, pp. 10321036, March 2004. DOI:10.1016/j.physe.2003.11.165

K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno and H. Ohno, "Electron
spin dynamics in InGaAs quantum wells," Physica E, vol. 21, pp. 10071011,
March 2004. DOI:10.1016/j.physe.2003.11.160

D. Chiba, F. Matsukura, H. Ohno, "Tunneling magnetoresistance in (Ga,
Mn)Asbased heterostructures with a GaAs barrier," Physica E,
vol. 21, pp. 966969, March 2004. DOI:10.1016/j.physe.2003.11.172

F. M. Hossain, J. Nishii, S. Takagi, T. Sugihara, A. Ohtomo, T. Fukumura,
H. Koinuma, H. Ohno and M. Kawasaki, "Modeling of grain boundary barrier
modulation in ZnO invisible thin film transistors," Physica E.
vol. 21, pp. 911915, March 2004. DOI:10.1016/j.physe.2003.11.149
2003

J. H. Zhao, F. Matsukura, K. Takamura, D. Chiba, Y. Ohno, K. Ohtani, H.
Ohno, "Zincblende CrSb/GaAs multilayer structures with roomtemperature
ferromagnetism," Materials Science in Semiconductor Processing, vol.
6, pp. 507509, OctoberDecember 2003. DOI:10.1016/j.mssp.2003.07.008

H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno and H. Ohno, "Hysteretic
dynamic nuclear polarization in GaAs/Al_{x}Ga_{1x}As(110) quantum wells," Physical Review B, vol. 68, 241303 (4 pages), December
2003. DOI:10.1103/PhysRevB.68.241303

D. Chiba, M. Yamanouchi, F. Matsukura and H. Ohno, "Electrical manipulation
of magnetization reversal in a ferromagnetic semiconductor," Science,
vol. 301, pp. 943945, August 2003. DOI:10.1126/science.1086608

Y. Li, P. Xiong, S. von Molnár, Y. Ohno and H. Ohno, "Magnetization
reversal of Iron nanoparticles studied by submicron Hall magnetometry,"
Journal of Applied Physics, vol. 93, pp. 79127914, May 2003. DOI:10.1063/1.1557827

D. Chiba, K. Takamura, F. Matsukura and H.Ohno, "Effect of lowtemperature
annealing on (Ga, Mn)As trilayer structures," Applied Physics Letters,
vol. 82, pp. 30203022, May 2003. DOI:10.1063/1.1571666

J. Nishii, F.M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I.
Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H.
Koinuma, H.Ohno and M. Kawasaki, "High mobility thin film transistors
with transparent ZnO channels," Japanese Journal of Applied Physics,
vol. 42, pp. L347L349, April 2003. DOI:10.1143/JJAP.42.L347

H. Ohno, "Molecular beam epitaxy and properties of ferromagnetic IIIV
semiconductors," Journal of Crystal Growth, vol. 251, pp. 285291,
April 2003. DOI:10.1016/S00220248(02)02290X

K. Ohtani, H. Sakuma, H. Ohno, "InAsbased quantum cascade light emitting
structures containing a double plasmon waveguide," Journal of Crystal
Growth, vol. 251, pp. 718722, April 2003. DOI:10.1016/S00220248(02)02314X

M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno,
"Electrical electron spin injection with a p+(Ga, Mn)As/n+GaAs tunnel junction,"
Journal of Superconductivity, vol. 16, pp. 167170, February 2003.
DOI:10.1023/A:1023282012059

H. Sanada, I. Arata, Y. Ohno, K. Ohtani, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, H. Ohno, "Drift transport of spinpolarized electrons
in GaAs," Journal of Superconductivity, vol. 16, pp. 217219, February
2003. DOI:10.1023/A:1023206817511

D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani, H. Ohno,
"Electric field effect on the magnetic properties of IIIV ferromagnetic
semiconductor (In, Mn)As and (Al, Ga, Mn)As," Journal of Superconductivity,
vol. 16, pp. 179182, February 2003. DOI:10.1023/A:1023238229806

K. Ohtani and H. Ohno, "InAs/AlSb quantum cascade lasers operating
at 10 ﾂｵm;, Applied Physics Letters, vol. 82, pp. 10031005, February
2003. DOI:10.1063/1.1545151

F. Matsukura, D. Chiba, Y. Ohno, T. Dietl, H. Ohno, "Spin degree of
freedom in ferromagnetic semiconductor heterostructures," Physica
E, vol. 16, pp. 104110, January 2003. DOI:10.1016/S13869477(02)005969

K. Ohtani, N. Matsumoto, H. Sakuma and H. Ohno, "Intersubband absorption
in ndoped InAs/AlSb multiplequantumwell structures," Applied Physics
Letters, vol. 82, pp. 3739, January 2003. DOI:10.1063/1.1534939
2002

K. Ohtani and H. Ohno, "An InAsbased intersubband quantum cascade laser," Japanese Journal of Applied Physics, vol. 41, pp. L1279L1280, November 2002.
DOI:10.1143/JJAP.41.L1279
 T. Tsuruoka, N. Tachikawa, S. Ushioda , F. Matsukura, K. Takamura, and
H. Ohno, "Local electronic structures of GaMnAs observed by crosssectional
scanning tunneling microscopy," Applied Physics Letters, vol. 81,
pp. 28002802, October 2002. DOI:10.1063/1.1512953
 H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura,
and H. Ohno, "Relaxation of photoinjected spins during drift transport
in GaAs," Applied Physics Letters, vol. 81, pp. 27882790, October
2002. DOI:10.1063/1.1512818
 F. Matsukura, H. Ohno. and T. Dietl, "IIIV ferromagnetic semiconductors,"
Handbook of Magnetic Materials, vol. 14, pp. 187, October 2002. Handbook of Magnetic Materials
(pdf, 1.1Mb)
 K. Takamura, F. Matsukura, D. Chiba, and H. Ohno, "Magnetic properties
of (Al, Ga, Mn)As," Applied Physics Letters, vol. 81, pp. 25902592,
September 2002. DOI:10.1063/1.1511540
 T. Dietl, F. Matsukura, and H. Ohno, "Ferromagnetism of magnetic semiconductors
: ZhangRice limit," Physical Review B, 66, 033203 (4 pages), July 2002.
DOI:10.1103/PhysRevB.66.033203

H. Ohno, "Ferromagnetic semiconductors for spin electronics,"
Journal of Magnetism and Magnetic Materials, vol. 242, pp. 105107,
April 2002. DOI:10.1016/S03048853(01)012100
 H. Akinaga and H. Ohno, "Semiconductor Spintronics," IEEE Transactions
on Nanotechnology, vol. 1, pp. 1931, March 2002. DOI:10.1109/TNANO.2002.1005423
 Y. Li, P. Xiong, S.von Molánr, S. Wirth, Y. Ohno, and H. Ohno, "Hall
magnetometry on a single iron nanoparticle," Applied Physics Letters,
vol. 80, pp. 46444646, June 2002. DOI:10.1063/1.1487921
 J.H. Zhao, F. Matsukura, E. Abe, D. Chiba, Y. Ohno, K. Takamura, and H.
Ohno, "Growth and properties of (Ga, Mn)As on Si (100) substrate,"
Journal of Crystal Growth, vol. 237239, pp. 13491352, April 2002. DOI:10.1016/S00220248(01)021819
 Y. Ohno, I. Arata, F. Matsukura, and H. Ohno, "Valence band barrier
at (Ga, Mn)As/GaAs interfaces," Physica E, vol. 13, pp. 521524, March
2002. DOI:10.1016/S13869477(02)001856
 D. K. Young, E. JohnstonHalperin, D.D. Awschalom, Y. Ohno, and H. Ohno,
"Anisotropic electrical spin injection in ferromagnetic semiconductor
heterostructures," Applied Physics Letters, vol. 80, pp. 15981600,
March 2002. DOI:10.1063/1.1458535
 F. Matsukura, D. Chiba, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani,
and H. Ohno, "Control of ferromagnetism in fieldeffect transistor
of a magnetic semiconductor," Physica E, vol. 12, pp. 351355, January
2002. DOI:10.1016/S13869477(01)002752
 H. Ohno, F. Matsukura, and Y. Ohno, "Semiconductor spin electronics
(Invited)," JSAP International, No. 5, January 2002.
 T. Tsuruoka, R. Tanimoto, N. Tachikawa, S. Ushioda, F. Matsukura, and H.
Ohno, "Microscopic identification of dopant atoms in Mndoped GaAs
layers," Solid State Communications, vol. 121, pp. 7982,
January 2002. DOI:10.1016/S00381098(01)004719
2001
 M. Kohda, Y.Ohno, K. Takamura, F. Matsukura, and H. Ohno, "A
spin Esaki diode," Japanese Journal of Applied Physics,
vol. 40, pp. L1274L1276, December 2001. DOI:10.1143/JJAP.40.L1274
 Y. Nagai, T. Kunimoto, K. Nagasaka, H. Nojiri, M. Motokawa, F. Matsukura,
T. Dietl, and H. Ohno, "Spin Polarization Dependent Far Infrared Absorption
in Ga1xMnxAs," Japanese Journal of Applied Physics, vol.
40, pp. 62316234, November 2001. DOI:10.1143/JJAP.40.6231
 G. Salis, D. D. Awschalom, Y. Ohno, and H. Ohno, "Origin of enhanced
dynamic nuclear polarization and alloptical nuclear magnetic resonance
in GaAs quantum wells," Physical Review B, vol. 64, 195304 (10 pages), October
2001. DOI:10.1103/PhysRevB.64.195304
 J. H. Zhao, F. Matsukura, K. Takamura, E. Abe, D. Chiba, and H. Ohno, "Roomtemperature
ferromagnetism in zincblende CrSb grown by molecular beam epitaxy,"
Applied Physics Letters, vol. 79, pp. 27762779, October 2001. DOI:10.1063/1.1413732
 H. Ohno, F. Matsukura, and Y. Ohno, "Spindependent phenomena in ferromagnetic/nonmagnetic
IIIV heterostructures (Invited)," Solid State Communications, vol.
119, pp. 281289, July 2001. DOI:10.1016/S00381098(01)001752
 H. Ohno, F. Matsukura, and Y. Ohno, "SpinDependent properties of
ferromagnetic/nonmagnetic GaAs heterostructures(Invited)," Materials
Science and Engineering B, vol. 84, pp. 7074, July 2001. DOI:10.1016/S09215107(01)005724
 K. Ohtani, H. Sakuma, and H. Ohno, "Emission wavelength control by
potential notch in typeII InAs/GaSb/AlSb intersubband lightemitting structures,"
Applied Physics Letters, vol. 78, pp. 41484150, June 2001. DOI:10.1063/1.1381034
 K. Takamura, F. Matsukura, Y. Ohno, and H. Ohno, "Growth and properties
of (Ga,Mn)As films with high Mn concentration," Journal of Applied
Physics, vol. 89, pp. 70247026, June 2001. DOI:10.1063/1.1357841
 Steven K. H. Sim, H. C. Liu, A. Shen, M. Gao, Kevin F. Lee, M. Buchanan,
Y. Ohno, H. Ohno, and E. H. Li, "Effect of barrier width on the performance
of quantum well infrared photodetector," Infrared Physics & Technology,
vol. 42, pp. 115121, June 2001. DOI:10.1016/S13504495(01)000676
 H. C. Liu, C. Y. Song, A. Shen, M. Gao, E. Dupont, P. J. Poole, Z. R. Wasilewski,
M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, Y. Ohno, and
H. Ohno, "Dualband photodetectors based on interband and intersubband
transitions," Infrared Physics & Technology, vol. 42, pp. 163170,
June 2001. DOI:10.1016/S13504495(01)00072X
 T. Adachi, Y. Ohno, F. Matsukura, and H. Ohno, "Spin relaxation in
nmodulation doped GaAs/AlGaAs (110) quantum wells," Physica E, vol.
10, pp. 3639, May 2001. DOI:10.1016/S13869477(01)000492
 T. Fukumura, T. Shono, K. Inaba, T. Hasegawa, H. Koinuma, F. Matsukura,
and H. Ohno, "Magnetic domain structure of a ferromagnetic semiconductor
(Ga, Mn)As observed with scanning probe microscopes," Physica E, vol.
10, pp. 135138, May 2001. DOI:10.1016/S13869477(01)000686
 T. Omiya, F. Matsukura, A. Shen, Y. Ohno, and H. Ohno, "Magnetotransport
properties of (Ga, Mn)As grown on GaAs (411) A substrates," Physica
E, vol. 10, pp. 206209, May 2001. DOI:10.1016/S13869477(01)000832
 S. Ueda, S. Imada, T. Muro, Y. Saitoh, S. Suga, F. Matsukura, and H. Ohno, "Magnetic
circular dichroism in Mn 2p core absorption of Ga_{1x}Mn_{x}As," Physica E, vol. 10, pp. 210214, May 2001. DOI:10.1016/S13869477(01)000844
 D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno,"Properties
of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures," Physica
E, vol. 10, pp. 278282, May 2001. DOI:10.1016/S13869477(01)00100X
 I. Arata, Y. Ohno, F. Matsukura, and H. Ohno, "Temperature dependence
of electroluminescence and IV characteristics of ferromagnetic/nonmagnetic
semiconductor pn junctions," Physica E, vol. 10, pp.288291, May 2001.
DOI:10.1016/S13869477(01)001011
 Y. Ohno, I. Arata, F. Matsukura, H. Ohno, D. K. Young, B. Beschoten, and
D. D. Awschalom, "Electrical spin injection in ferromagnetic/nonmagnetic
semiconductor heterostructure," Physica E, vol. 10, pp.489492, May
2001. DOI:10.1016/S13869477(01)001436
 T. Dietl , H. Ohno, and F. Matsukura , "Holemediated ferromagnetism
in tetrahedrally coordinated semiconductors," Physical Review B, vol.
63, 195205 (21 pages), May 2001. DOI:10.1103/PhysRevB.63.195205
 G. Salis, D.T. Fuchs, J. M. Nikkawa, D. D. Awschalom, Y. Ohno, and H. Ohno,
"Optical manipulation of nuclear spin by a twodimensional electron
gas," Physical Review Letters, vol. 86, pp. 26772680, March 2001.
DOI:10.1103/PhysRevLett.86.2677
 H. Ohno and F. Matsukura, "A ferromagnetic IIIV semiconductor: (Ga,
Mn)As," Solid State Communications, vol. 117, pp. 179186, January
2001. DOI:10.1016/S00381098(00)004361
 H. Ofuchi, T. Kubo, M. Tabuchi, Y. Takeda, F. Matsukura, S. P. Guo, A. Shen, and H. Ohno,
"Fluorescence extended xray absorption fine structure study on local structures around Mnatoms in thin (In, Mn)As layer and (In, Mn)As quantum dots,"
Journal of Applied Physics, vol. 89, pp. 6670, January 2001.
DOI:10.1063/1.1330761
 T. Dietl and H. Ohno, "Ferromagnetism in IIIV and II VI semiconductor
structures," Physica E, vol. 9, pp. 185193, January 2001. DOI:10.1016/S13869477(00)001934
2000
 H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and
K. Ohtani, "Electricfield control of ferromagnetism," Nature,
vol. 408, pp. 944946, December 2000. DOI:10.1038/35050040
 J. Yang, H. Yasuda, S. Wang, F. Matsukura, Y. Ohno, and H. Ohno,"Surface
morphologies of IIIV based magnetic semiconductor (Ga, Mn)As grown by
molecular beam epitaxy," Applied Surface Science, vol. 166, pp. 242246,
October 2000. DOI:10.1016/S01694332(00)004293
 H. Yasuda, F. Matsukura, Y. Ohno, and H. Ohno, "Arsenic flux dependence
of InAs nanostructure formation on GaAs (211)B surface," Applied Surface
Science, vol. 166, pp. 413417, October 2000. DOI:10.1016/S01694332(00)00458X
 D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno, "Magnetoresistance
effect and interlayer coupling of (Ga, Mn)As trilayer structures,"
Applied Physics Letters, vol. 77, pp. 18731875, September 2000. DOI:10.1063/1.1310626
 T. Shono, T. Hasegawa, T. Fukumura, F. Matsukura, and H. Ohno, "Observation
of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As
with a scanning Hall probe microscope," Applied Physics Letters,
vol. 77, pp. 13631365, August 2000. DOI:10.1063/1.1290273
 H. Ohno, "Ferromagnetic IIIV heterostructures," Journal of Vacuum
Science & Technology B, vol. 18, pp. 20392043, July/August 2000.
DOI:10.1116/1.1305944
 T. Shono, T. Fukumura, M. Kawasaki, H. Koinuma, T. Hasegawa, T. Endo, K.
Kitazawa, F. Matsukura, and H. Ohno, "Magnetic domain structures of
(Ga,Mn)As investigated by scaning Hall probe microscopy," Physica
B, vol. 284, pp. 11711172, July 2000. DOI:10.1016/S09214526(99)025855
 Y. Ohno, I. Arata, F. Matsukura, K. Ohtani, S. Wang and H. Ohno, "MBE
growth and electroluminescence of ferromagnetic/nonmagnetic semiconductor;
pn junctions based on (Ga,Mn)As," Applied Surface Science, vol. 159160,
pp. 308312, June 2000. DOI:10.1016/S01694332(00)001070
 F. Matsukura, E. Abe, Y. Ohno, and H. Ohno, "Molecular beam epitaxy
of GaSb with high concentration of Mn," Applied Surface Science, vol.
159160, pp. 265269, June 2000. DOI:10.1016/S01694332(00)001082
 K. Ohtani, A. Sato, Y. Ohno, F. Matsukura, and H. Ohno,
"Influence of interface bond and buffer material on the optical properties of InAs/AlSb quantum wells grown on GaAs substrates,"
Applied Surface Science, vol. 159160, pp. 313317, June 2000. DOI:10.1016/S01694332(00)001069
 H. Ohldag, V. Solinus, F. U. Hillebrecht, J. B. Goedkoop, M. Finazzi,
F. Matsukura, and H. Ohno, "Magnetic moment of Mn in the ferromagnetic
semiconductor Ga_{0.98}Mn_{0.02}As,"
Applied Physics Letters, vol. 76, pp. 29282930, May 2000. DOI:10.1063/1.126519
 T. Adachi, Y. Ohno, R. Terauchi, F. Matsukura, and H. Ohno, "Mobility
dependence of electron spin relaxation time in ntype InGaAs/InAlAs multiple
quantum wells," Physica E, vol. 7, pp. 10151019, May 2000. DOI:10.1016/S13869477(00)001077
 T. Omiya, F. Matsukura, T. Dietl, Y. Ohno, T. Sakon, M. Motokawa, and H.
Ohno, "Magnetotransport properties of (Ga,Mn)As investigated at low
temperature and high magnetic field," Physica E, vol. 7, pp. 976980,
May 2000. DOI:10.1016/S13869477(00)000990
 E. Abe, F. Matsukura, H. Yasuda, Y. Ohno, and H. Ohno, "Molecular
beam epitaxy of IIIV diluted magnetic semiconductor (Ga,Mn)Sb," Physica
E, vol. 7, pp. 981985, May 2000. DOI:10.1016/S13869477(00)001004
 T. Dietl, J. Chbert, P. Kossacki, D. Ferrand, S. Tatarenko, A. Waisiela,
Y. Merle D'aubigne, F. Matsukura, N. Akiba, and H. Ohno, "Ferromagnetizm
induced by free carriers in ptype structures of diluted magnetic semiconductors,"
Physica E, vol. 7, pp. 967975, May 2000. DOI:10.1016/S13869477(00)000989
 T. Wang, J. Bai, S. Sakai, Y. Ohno, and H. Ohno "Magnetotransport
studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective
mass and scattering time," Applied Physics Letters, vol. 76, pp. 27372739,
May 2000. DOI:10.1063/1.126460
 F. Matsukura, E. Abe, and H. Ohno, "Magnetotransport properties of
(Ga, Mn)Sb," Journal of Applied Physics, vol. 87, pp. 64426444,
May 2000. DOI:10.1063/1.372732
 N. Akiba, D. Chiba, K. Nakata, F. Matsukura, Y. Ohno, and H. Ohno, "Spindependent
scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures,"
Journal of Applied Physics, vol. 87, pp. 64366438, May 2000. DOI:10.1063/1.372730
 K. Ohtani and H. Ohno, "Midinfrared intersubband electroluminescence
in InAs/GaSb/AlSb typeII cascade structure," Physica E, vol. 7, pp.
8083, April 2000. DOI:10.1016/S13869477(99)002829
 T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, "Zener
model description of ferromagnetism in zincblende magnetic semiconductors,"
Science, vol. 287, pp. 10191022, February 2000. DOI:10.1126/science.287.5455.1019
 H. Ohno, "Ferromagnetism and heterostructures of IIIV magnetic
semiconductors," Physica E, vol. 6, pp. 702708, February 2000. DOI:10.1016/S13869477(99)001770
 Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, "Electron
spin relaxation beyond D'yakonovPerel' interaction in GaAs/AlGaAs quantum
wells," Physica E, vol 6, pp. 817820, February 2000. DOI:10.1016/S13869477(99)002519
 S. P. Guo, A. Shen, H. Yasuda, Y. Ohno, F. Matsukura, and H. Ohno, "Surfactant
effect of Mn on the formation of selforganized InAs nanostructures,"
Journal of Crystal Growth, vol. 208, pp. 799803, January 2000. DOI:10.1016/S00220248(99)004650
 A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, N. Kumada, Y. Ohno, S. Kishimoto,
F. Matsukura, and S. Nagahama, "Bilayer v=2 quantum Hall state in
parallel high magnetic field," Physica E, vol. 6, pp. 615618, February
2000. DOI:10.1016/S13869477(99)001290
1999
 J. G. E. Harris, D. D. Awshalom,, F. Matsukura, H. Ohno, K. D. Maranowski,
and A. C. Gossard, "Integrated micromechanical cantilever megnetometry
of Ga_{1x}Mn_{x}As," Applied Physics Letters, vol. 75, pp. 11401142, August
1999. DOI:10.1063/1.124622
 B. Beschoten, P. A. Cowell, I. Malajovich, D. D. Awschalom, F. Matsukura,
A. Shen, and H. Ohno, "Magnetic circular dichroism studies of carrierinduced
ferromagnetism in Ga_{1x}Mn_{x}As," Physical Review Letters, vol. 83, pp. 30733076, October
1999. DOI:10.1103/PhysRevLett.83.3073
 Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom,
"Electrical spin injection in a ferromagentic semiconductor heterostructures,"
Nature, vol. 402, pp. 790792, December 1999. DOI:10.1038/45509
 Y. Ohno, R. Terachi, T. Adachi, F. Matsukura, and H. Ohno, "Spin relaxation
in GaAs (110) quantum wells," Physical Review Letters, vol. 83, pp.
41964199, November 1999.DOI:10.1103/PhysRevLett.83.4196
 H. Ohno, "Properties of ferromagnetic IIIV semiconductors,"
Journal of Magnetism and Magnetic Materials, vol. 200, pp. 110129, October
1999. DOI:10.1016/S03048853(99)004448
 Y. Iye, A. Oiwa , A. Endo, S. Katsumoto, F. Matsukura, A. Shen, H. Ohno, and
H. Munekata, "Metalinsulator transition and magnetotransport in IIIV
compound diluted magnetic semiconductors," Materials Science and Engineering
B, vol. 63, pp. 8895, August 1999. DOI:10.1016/S09215107(99)000574
 H. Ohno, "Ferromagnetic IIIV semiconductors and their heterostrucures,"
Proceedings of the 24th International Conference on the Physics of Semiconductors
(Jerusalem, Israel, 2 窶・7 August 1998, Ed. by D. Gershoni, World Scientific, Singapore), pp. 139146.
 A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, A. Urayama, Y. Ohno, S.
Kishimoto, F. Matsukura, and N. Kumada, "Interlayer coherence in v
= 1 and v = 2 bilayer quantum Hall states," Physical Review B, vol.
59, pp. 1488814891, June 1999. DOI:10.1103/PhysRevB.59.14888
 K. Ohtani and H. Ohno, "Intersubband electroluminescence in InAs/GaSb/AlSb type II cascade structures,"
Applied Physics Letters, vol. 74, pp. 14091411, March 1999. DOI:10.1063/1.123566
 T. Wang , Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai, and
H. Ohno, "Electron mobility exceeding 10^{4} cm^{2}/Vs in an AlGaNGaN heterostructure grown on a sapphire substrate,"
Applied Physics Letters, vol. 74, pp. 35313533, June 1999. DOI:10.1063/1.124151
 H. Yasuda and H. Ohno, "Monte Carlo simulation of reentrant
reflection highenergy electron diffraction intensity oscillation observed
during lowtemperature GaAs growth," Applied Physics Letters,
vol. 74, pp. 32753277, May 1999. DOI:10.1063/1.123318
 K. Ohtani and H. Ohno, "Midinfrared intersubband electroluminescence
in InAs/AlSb cascade structures," Electronics Letters, vol. 35, pp.
935936, May 1999. DOI:10.1049/el:19990624
 J. Szczytko, W. Mac, A. Twardowski, F. Matsukura, and H. Ohno, "Antiferromagnetic
pd exchange in ferromagnetic Ga_{1x}Mn_{x}As epilayers," Physical Review B, vol. 59, pp. 1293512939, May 1999.
DOI:10.1103/PhysRevB.59.12935
 A. Shen, F. Matsukura, S.P. Guo, Y. Sugawara, H. Ohno, M. Tani, H. Abe,
and H. C. Liu, "Lowtemperature molecular beam epitaxial growth of
GaAs and (Ga,Mn)As," Journal of Crystal Growth, vol. 201202, pp.
679683, May 1999. DOI:10.1016/S00220248(98)01447X
 S. P. Guo, A. Shen, F. Matsukura, Y. Ohno, and H. Ohno, "InAs and
(In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrates,"
Journal of Crystal Growth, vol. 201202, pp. 684688, May 1999. DOI:10.1016/S00220248(98)014420
 A. Sato, K. Ohtani, R. Terauchi, Y. Ohno, F. Matsukura, and H. Ohno, "Xray
diffraction study of InAs/AlSb interface bonds grown by molecular beam
epitaxy," Journal of Crystal Growth, vol. 201202, pp. 861863, May 1999. DOI:10.1016/S00220248(98)014754
 H. Ohno, F. Matsukura, T. Omiya, and N. Akiba, "Spindependent tunneling
and properties of ferromagnetic (Ga,Mn)As," Journal of Applied Physics,
vol. 85, pp. 42774282, April 1999. DOI:10.1063/1.370343
 R. Terauchi, Y. Ohno, T. Atachi, A. Sato, F. Matsukura, A. Tackeuchi, and
H. Ohno, "Carrier mobility dependence of electron spin relaxation
in GaAs quantum wells," Japanese Journal of Applied Physics, vol.
38, pp. 25492551, April 1999. DOI:10.1143/JJAP.38.2549
 A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno, and H. Munekata,
"Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb,"
Physical Review B, vol. 59, pp. 58265831, February 1999. DOI:10.1103/PhysRevB.59.5826
 H. Ohno, "IIIV based ferromagnetic semiconductors," Journal of Magnetics Society of Japan, vol. 23, pp. 8892, 1999. DOI:10.3379/jmsjmag.23.88
 F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye
and H. Ohno, "Magnetotransport properties of (Ga,Mn)As/GaAs/(Ga,Mn)As
trilayer structures," Journal of Magnetics Society of Japan, vol. 23, pp.
99101, 1999. DOI:10.3379/jmsjmag.23.99
1998
 S. Kishimoto, Y. Ohno, F. Matsukura, and H. Ohno, "Spin dependence
of the interlayer tunneling in double quantum wells in the quantum Hall
regime," Physica B, vol. 256258, pp. 535539, December 1998. DOI:10.1016/S09214526(98)006747
 N. Akiba, F. Matsukura, Y. Ohno, A. Shen, K. Ohtani, T. Sakon, M. Motokawa,
and H. Ohno, "Magnetotunneling spectroscopy of resonant tunneling
diode using ferromagnetic (Ga, Mn)As," Physica B, vol. 256258, pp.
561564, December 1998. DOI:10.1016/S09214526(98)004906
 Y. H. Matsuda, H. Arimoto, N. Miura, A. Twardowski, H. Ohno, A. Shen, and
F. Matsukura, "Cyclotron resonance in Cd_{1x}Fe_{x}S and Ga_{1x}Mn_{x}As at megagauss magnetic fields,"
Physica B, vol. 256258, pp. 565568,
December 1998. DOI:10.1016/S09214526(98)006735
 H. Nojiri, M. Motokawa, S. Takeyama, F. Matsukura, and H. Ohno, "ESR
study of Mn doped IIVI and IIIV DMS," Physica B, vol. 256258, pp.
569572, December 1998. DOI:10.1016/S09214526(98)005043
 F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye,
and H. Ohno, "Magnetotransport properties of all semiconductor (Ga,
Mn)As/(Al, Ga)As/(Ga, Mn)As trilayer structures," Physica B, vol.
256258, pp. 573576, December 1998. DOI:10.1016/S09214526(98)004955
 F. Matsukura, A. Shen, Y. Sugawara, T. Omiya, Y. Ohno, and H. Ohno, "Properties
of (Ga,Mn)As and their dependence on molecular beam growth conditions,"
Proceedings of the 25th International Symposium on Compound Semiconductors held in Nara (Nara, Japan, October 1216, 1998, Eds. H Sakaki, J.C. Woo, N. Yokoyama, Y Harayama, CRC Press), pp. 547552.
 N. Akiba, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, A. Oiwa, S. Katsumoto,
and Y. Iye "Interlayer exchange in (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As
semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures,"
Applied Physics Letters, vol. 73, pp. 21222124, October 1998. DOI:10.1063/1.122398
 T. Tsuruoka, Y. Oshizumi, S. Ushioda, Y. Ohno, and H. Ohno,
"Light emision spectra of AsGaAs/GaAs multiquantum wells induced by scanning tunneling microscope,"
Applied Physics Letters, vol. 73, pp. 15441546, September 1998. DOI:10.1063/1.122200
 H. Ohno, "Making nonmagnetic semiconductor magnetic," Science,
vol. 281, pp. 951956, August 1998. DOI:10.1126/science.281.5379.951
 H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, "Spontaneous
splitting of ferromagnetic (Ga, Mn)As observed by resonant tunneling spectroscopy,"
Applied Physics Letters, vol. 73, pp. 363365, July 1998. DOI:10.1063/1.121835
 K. Ohtani, Y. Ohno, F. Matsukura, and H. Ohno, "Well
width dependence of bound to quasibound intersubband transition in GaAs
quantum wells with multiquantum barriers," Physica E, vol. 2, pp.
200203, July 1998. DOI:10.1016/S13869477(98)000435
 S. P. Guo, H. Ohno, A. Shen, and Y. Ohno, "InAs quantum dots and dashes
grown on (100), (211)B, and (311)B GaAs substrates," Physica E, vol.
2, pp. 672677, July 1998. DOI:10.1016/S13869477(98)001374
 H. Ohno, F. Matsukura, A. Shen, Y. Sugawara, N. Akiba, and T. Kuroiwa,
"Ferromagnetic (Ga, Mn)As and its heterostructures,"
Physica E, vol. 2, pp. 904908, July 1998. DOI:10.1016/S13869477(98)001842
 Y. Ohno, A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F.
Matsukura, M. Yasumoto and A. Urayama, "v=1 bilayer quantum Hall state at arbitrary electron distribution in a double
quantum well," SolidState Electronics, vol. 42, pp. 11831185, July
1998. DOI:10.1016/S00381101(97)003262
 S. Kishimoto, Y. Ohno, F. Matsukura, H. Sakaki, and H. Ohno, "Etchedbackgate
fieldeffect transistor structure for magnetotunneling study of lowdimensional
electron systems," SolidState Electronics, vol. 42, pp. 11871190,
July 1998. DOI:10.1016/S00381101(98)00001X
 A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, F. Matsukura, A. Shen,
Y. Sugawara, and H. Ohno, "Lowtemperature conduction and giant negative
magnetoresistance in IIIV based diluted magnetic semicondcutor: (Ga,Mn)As/GaAs,"
Physica B, vol. 249251, pp. 775779, June 1998. DOI:10.1016/S09214526(98)003123
 A. Shen, H. Ohno, F. Matsukura, H. C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, and Y. Ohno,
"Superlattice and multilayer structures bsed on ferromagnetic semiconductor (Ga, Mn)As,"
Physica B, vol. 249251, pp. 809813, June 1998. DOI:10.1016/S09214526(98)003196
 A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura,
Y. Ohno, M. Yasumoto, and A. Urayama, "Interlayer quantum coherence
and anomalous stability of v=1 bilayer quantum Hall state," Physica B, vol. 249251, pp. 836840,
June 1998. DOI:10.1016/S09214526(98)003263
 A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, and F. Matsukura,
"Lowtemperature GaAs grown by molecularbeam epitaxy under high As overpressure: A reflection highenergy electron diffraction study,"
Applied Surface Science, vol. 130132, pp. 382386, June 1998. DOI:10.1016/S01694332(98)000877
 S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno,
"Selforganized (In,Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates,"
Applied Surface Science, vol. 130132, pp. 797802, June 1998. DOI:10.1016/S01694332(98)001573
 A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, Y. Ohno, S. Kishimoto, F.
Matsukura, M. Yasumoto, and A. Urayama, "Phase transition in the v=2 bilayer quantum Hall state,"
Physical Review Letters, vol. 80,
pp. 45344537, May 1998. DOI:10.1103/PhysRevLett.80.4534
 S. Guo, H. Ohno, A. Shen, Y. Ohno, and F. Matsukura,
"Photoluminescence study of InAs quantum dots and quantum dashes on
GaAs (211)B," Japanese Journal of Applied Physics, vol. 37, pp. 15271531,
March 1998. DOI:10.1143/JJAP.37.1527
 T. Kuroiwa, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, T. Yasuda, and Y.
Segawa, "Faraday rotation of ferromagnetic (Ga,Mn)As," Electronics
Letters, vol. 34, pp. 190192, January 1998. DOI:10.1049/el:19980128
 F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, "Transport properties
and origin of ferromagnetism in (Ga,Mn)As," Physical Review B, vol.
57, pp. R2037R2040, January 1998. DOI:10.1103/PhysRevB.57.R2037
 A. Oiwa, S. Katsumoto, Y. Iye, H. Ohno, F. Matsukura, A. Shen, and Y. Sugawara,
"Giant negative magnetoresistance of (Ga,Mn)As/GaAs in the vicinity
of a metalinsulator transition," Physica. Status Solidi (b),
vol. 205, pp 115118, January 1998. DOI:10.1002/(SICI)15213951(199801)205:1<115::AIDPSSB115>3.0.CO;2F
 S. Katsumoto, A. Oiwa, A. Endo, M. Hirasawa, Y. Iye, H. Ohno, F. Matsukura,
A. Shen, and Y. Sugawara, "Strongly anisotropic hopping conduction
in (Ga,Mn)As/GaAs," Physica Status Solidi (b), vol. 205, pp. 167171,
January 1998. DOI:10.1002/(SICI)15213951(199801)205:1<167::AIDPSSB167>3.0.CO;2O
 H. Ohno, "Magnetotransport and magnetic properties of (Ga,Mn)As and
its heterostructures," Acta Physica Polonica A, vol. 94, pp. 155164, 1998. DOI:10.12693/APhysPolA.94.155
1997
 A. Shen, Y. Horikoshi, H. Ohno, and S. P. Guo, "Reflection highenergy
electron diffraction oscillations during growth of GaAs at low temperatures
under high As overpressure," Applied Physics Letters, vol. 71,
pp. 15401542, September 1997. DOI:10.1063/1.119973
 H. Ohno, "Preparation and properties of IIIV based new diluted magnetic
semiconductors," Advances in Colloid and Interface Science, vol. 71/72,
pp. 6175, September 1997. DOI:10.1016/S00018686(97)900105
 A. Sawada, Z. F. Ezawa, H. Ohno, Y. Hirokoshi, O. Sugie, S. Kishimoto, F. Matsukura, Y. Ohno, and M. Yasumoto, "Anomalous stability of v=1 bilayer quantum Hall state," Solid State Communications, vol. 103, pp. 447451, August 1997. DOI:10.1016/S00381098(97)002214
 A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, H. Ohno, Y. Sugawara, A. Shen,
F. Matsukura, and Y. Iye, "Nonmetalmetalnonmetal transition and
large negative magnetoresistance in (Ga,Mn)As/GaAs," Solid State Communications,
vol. 103, pp. 209213, July 1997. DOI:10.1016/S00381098(97)001786
 S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "InAs selforganized
quantum dashes grown on GaAs(211)B," Applied Physics Letters, vol.
70, pp. 27382740, May 1997. DOI:10.1063/1.119007
 A. Shen, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, and T. Kuroiwa,
"Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs,"
Journal of Crystal Growth, vol. 175176, pp. 10691074, May 1997.
DOI:10.1016/S00220248(96)009670
 H. Ohno, A. Mathur, Y. Ohno, F. Matsukura, K. Ohtani, N. Akiba, T. Kuroiwa,
and H. Nakajima, "Electric field dependence of intersubband transitions
in GaAs/AlGaAs single quantum wells," Applied Surface Science, vol. 113114,
pp. 9096, April 1997. DOI:10.1016/S01694332(96)008793
 F. Matsukura, A. Oiwa, A. Shen, Y. Sugawara, N. Akiba, T. Kuroiwa, H. Ohno, A. Endo, S. Katsumoto, and Y. Iye, "Growth and properties of (Ga, Mn)As: a new IIIV diluted magnetic semiconductor," Applied Surface Science, vol. 113/114, pp. 178182, April 1997. DOI:10.1016/S01694332(96)007908
 A. Shen, F. Matsukura, Y. Sugawara, T. Kuroiwa, H. Ohno, A. Oiwa, A. Endo,
S. Katsumoto, and Y. Iye, "Epitaxy and properties of InMnAs/AlGaSb
diluted magnetic IIIV semiconductor heterostructures," Applied Surface
Science, vol. 113/114, pp. 183188, April 1997. DOI:10.1016/S01694332(96)008653
 A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, Y. Ohno, N. Akiba, and T.
Kuroiwa, "(Ga, Mn)As/GaAs diluted megnetic semiconductor superlattice
structures prepared by molecular beam epitaxy," Japanese Journal of
Applied Physics, vol. 36, pp. L73L75, February 1997. DOI:10.1143/JJAP.36.L73
 A. Oiwa, Y. Iye, S. Katsumoto, A. Endo, M. Hirasawa, H. Ohno, F. Matsukura,
A. Shen, and H. Munekata, "Electrical and magnetic properties of (In,Mn)As/(Al,Ga)Sb
heterostructures and bulk (Ga,Mn)As," Proceedings of the 12th International Conference on High
Magnetic Fields in the Physics of Semiconductors II (eds.
G. Landwehr and W. Ossau, World Scientific, Singapore, 1997), pp. 885888.
1996
 H. Ohno, F. Matsukura, A. Shen, Y. Sugawara, A. Oiwa, A. Endo, S. Katsumoto
and Y. Iye, "Ferromagnetic order in (Ga, Mn)As/GaAs heterostructures,"
Proceedings of the 23rd International Conference on the Physics of Semiconductors
(Berlin, Germany, July 2126, 1996, Eds. M. Scheffler and R. Zimmermann,
World Scientific, Singapore, 1996), pp. 405408.
 H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y.
Iye, "(Ga, Mn)As: A new diluted magnetic semiconductor based on GaAs,"
Applied Physics Letters, vol. 69, pp. 363365, July 1996. DOI:10.1063/1.118061
1995
 H. Ohno, "Mnbased IIIV diluted magnetic
(semimagnetic) semiconductors," Materials
Science Forum, vol. 182184, pp. 443450, February 1995. DOI:10.4028/www.scientific.net/MSF.182184.443
 H. Ohno, F. Matsukura, H. Munekata, Y. Iye, and J. Nakahara, "Temperature
dependence of anomalous Hall effect and magnetism of (In, Mn)As/(Al ,Ga)Sb
heterostructures," Proceedings of the 22nd International Conference
on the Physics of Semiconductors (Vancouver, Canada, August 1519, 1994,
Ed. D. J. Lockwood, World Scientific, Singapore, 1995), pp. 26052608.
Related Papers
 S. Goto, Y. Nomura, Y. Morishita, Y. Katayama, and H. Ohno, "Growth
of GaAs by molecularbeam epitaxy using trisdimethylaminoarsine,"
Journal of Crystal Growth, vol. 149, pp. 143146, April 1995. DOI:10.1016/00220248(95)000313
 H. Ohno, "Minimum light power for optical interconnection in integrated
circuits," Optoelectronics Devices and Technologies, vol. 9(1), pp.
131136, 1994.
 H. Ohno, "Intersubband population inversion in tunneling heterostructures,"
Transactions of the Materials Research Society of Japan, vol. 19A, pp.
4752, 1994.
 H. Ohno, L. Esaki, and E. E. Mendez, "Optoelectronic devices
based on type II polytype tunnel heterostructures," Applied Physics
Letters, vol. 60, pp. 31533155, June 1992. DOI:10.1063/1.106726
 H. Ohno, H. Munekata, T. Penney, S. von Molnár, and L. L.
Chang, "Partial ferromagnetic order in ptype (In,Mn)As diluted magnetic
IIIV semiconductors," Materials Science Forum, vol. 117&118,
pp. 297302, January 1993. DOI:10.4028/www.scientific.net/MSF.117118.297
 H. Ohno, "Diluted magnetic IIIV semiconductor and its transport properties,"
Japanese Journal of Applied Physics, vol. 32, pp. 459461, 1993.
 H. Ohno, E. E. Mendez, A. Alexandrou, and J. M. Hong, "Tamm states
in superlattices," Surface Science, vol. 267, pp. 161165, October
1992. DOI:10.1016/00396028(92)91112O
 H. Ohno, H. Munekata, T. Penney, S. von Molnár, and L. L. Chang,
"Magnetotransport properties of ptype (In, Mn)As diluted magnetic
IIIV semiconductors," Physical Review Letters, vol. 68, pp. 26642667,
April 1992. DOI:10.1103/PhysRevLett.68.2664
 S. von Molnár, H. Munekata, H. Ohno, and L. L. Chang, "New
diluted magnetic semiconductors based on IIIV Compounds," Journal of
Magnetism and Magnetic Materials, vol. 93, pp. 356364, February 1991.
DOI:10.1016/03048853(91)90361D
 H. Munekata, H. Ohno, R .R. Ruf, R. J. Gambino, and L. L. Chang, "Ptype
diluted magnetic IIIV semiconductors," Journal of Crystal
Growth, vol. 111, pp. 10111015, May 1991. DOI:10.1016/00220248(91)91123R
 E. E. Mendez, H. Ohno, L. Esaki, and W. I. Wang, "Resonant interband
tunneling via Landau levels in polytype heterostructures," Physical
Review B, vol. 43, pp. 51965199, February 1991. DOI:10.1103/PhysRevB.43.5196
 H. Ohno, H. Munekata, S. von Molnár, and L. L. Chang, "New IIIV
diluted magnetic semiconductors," Journal of Applied Physica,
vol. 69, pp. 61036108, April 1991. DOI:10.1063/1.347780
 H. Ohno, E. E. Mendez, and W. I. Wang, "Effects of carrier mass differences
on the currentvoltage characteristics of resonant tunneling structures,"
Applied Physics Letters, vol. 56, pp. 17931795, April 1990. DOI:10.1063/1.103102
 H. Munekata, H. Ohno, S. von Molnár, A. Harwit, A. Segmüller,
and L. L. Chang, "Epitaxy of IIIV diluted magnetic semiconductor
materials," Journal of Vacuum Science Technology B,
vol. 8, pp. 176180, March 1990. DOI:10.1116/1.584849
 H. Ohno, E. E. Mendez, J. A. Brum, J. M. Hong, F. AgullóRueda,
L. L. Chang, and L. Esaki, "Observation of 'Tamm states' in superlattices," Physical Review Letters,
vol. 64, pp. 25552558, May 1990. DOI:10.1103/PhysRevLett.64.2555
 H. Ohno, E. E. Mendez, J. A. Brum, J. M. Hong, F. AgullóRueda,
A. Alexandrou, L. L. Chang, and L. Esaki, "'Surface' Effects in superlattices:
Formation of Tamm states," Proceedings of the 20th International Conference on the Physics of Semiconductors
(World Scientific, Singapore, 1990), pp. 10131016.
 F. AgullóRueda, E. E. Mendez, H. Ohno, and J. M. Hong, "Interaction
between extended and localized states in superlattices," Physical
Review B, vol. 42, pp. 14701473, July 1990. DOI:10.1103/PhysRevB.42.1470
 H. Munekata, H. Ohno, S. von Molnár, A. Segmüller, L. L. Chang,
and L. Esaki, "Diluted magnetic IIIV semiconductors," Physical
Review Letters, vol. 63, pp. 18491852, October 1989. DOI:10.1103/PhysRevLett.63.1849