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- D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno, "Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures", Applied Physics Letters,Vol. 77, Issue 12, pp. 1873-1875, 18 September, 2000.
- D. Chiba, N. Akiba, F. Matsukura, Y. Ohno and H. Ohno,"Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures", Physica E, Vol. 10, Issues 1-3, pp. 278-282, May 2001.
- D. Chiba, F. Matsukura, H. Ohno, "Tunnelingmagnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier," Phisica E Vol. 21, pp. 966-969, March 2004.
- D. Chiba, Y. Sato, T. Kita, F. Matsukura, and H. Ohno "Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction," Physical Review Letters, Vol. 93, pp. 216602(1)-(4), November 2004.
- Y. Sato, D. Chiba, F. Matsukura, and H. Ohno, ”Effect of GaAs Intermediary Layer Thickness on the Properties of (Ga,Mn)As Tri-Layer Structures”, Journal of Superconductivity: Incorporating Novel Magnetism, Vol. 18, pp. 345-347, 2005.
- D. Chiba, T. Kita, F. Matsukura, and H. Ohno, "Pulse-width and Magnetic-field Dependences of Current-induced Magnetization Switching in a (Ga, Mn)As Magnetic Tunnel Junction", Journal of Applied Physics, Vol. 99, pp. 08G514(1)-(3), Apr. 2006.
- D. Chiba, F. Matsukura, and H. Ohno, "Electrical Magnetization Reversal in Ferromagnetic III-V Semiconductors", Journal of Physics D: Applied Physics, Vol. 39, pp. R215(1)-(11), Jun. 2006.
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