@Our research activities cover the areas of preparation, characterization
and application of compound semiconductor quantum structures for high speed
devices. The quantum structures are prepared by Molecular Beam Epitaxy (MBE). Materials of interest include AlGaAs/GaAs
as well as InAs/GaSb. MBE study of
a new
class of semiconductor, III-V based ferromagnetic semiconductors, such as (Ga,Mn) As and (In,Mn)As, is also
being carried out to expand the horizon
of
application of quantum structures by
the
addition of a new degree of freedom
associated
with electron spin in the material.
At present,
research is focused on the quantum transport phenomena between two-dimensional electron gases,
THz devices that utilize the optical transitions in
broken-bandgap heterostructures, and
exploration
of new properties and new functionality
associated
with the spin degree of freedom of carriers in semiconductors (such
as quantum computing) using III-V based ferromagnetic/non-magnetic
semiconductor heterostructures.
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