| Resonant Tunneling Diodes with (Ga,Mn)As Emitter |
Current-voltage characteristics of AlAs/GaAs/AlAs double barrier resonant tunneling diodes with ferromagnetic p-type (Ga,Mn)As on one side and p-type GaAs on the other have been studied. A series of resonant peaks have been observed in both polarities, i.e., injecting holes from p-type GaAs and from (Ga,Mn)As. When holes are injected from the (Ga,Mn)As side, spontaneous resonant peak splitting has been observed below the ferromagnetic transition temperature of (Ga,Mn)As without magnetic field.
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| Schematic simplified diagram of a resonant tunneling diode. Energy versus wave vector parallel to the interface with spin |
| split bands (upper column) and resulting I-V curve (lower column). |
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| Fig. 1. | (a) Current vs voltage (I-V) curves and (b) dI/dV-V curves at various temperatures for a RTD with a 15nm spacer layer. Positive bias corresponds to the hole injection from the (Ga,Mn)As side. The inset of (a) is a schematic valence band diagram of the RTD structures, where hole energy levels are illustrated. |
| Publication |
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| H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, "Spontaneous splitting of ferromagnetic (Ga,Mn)As observed by resonant tunneling spectroscopy," Applied Physics Letters, vol. 73 (3), pp. 363-365, 1998 |