| MBE Growth and Characterization of (Ga,Mn)Sb |
| E. Abe, F. Matsukura, H. Yasuda, Y. Ohno, and H. Ohno, Physica E, 2000
|
Dilute alloy of GaSb and Mn, (Ga,Mn)Sb, with a few percent of Mn was prepared
by molecular beam epitaxy and its magnetic as well as transport properties
were measured. Magnetotransport measurements show a pronounced anomalous
Hall effect and negative magnetoresistance below 50 K, indicating the presence
of ferromagnetic phase at low temperatures. The results suggest that a
part of Mn atoms are incorporated in the GaSb host, resulting in the formation
of ferromagnetic semiconductor, (Ga,Mn)Sb.
| Fig. 1 AFM images of (Ga,Mn)Sb. (a) x=0.023 with a streaky
RHEED pattern. (b) x=0.04 with a spotty RHEED pattern. |
| Fig. 2 Magnetization curves of (Ga,Mn)Sb with x=0.0086
at four different temperatures. Magnetic field was applied parallel to
the sample plane. |
| Fig. 3 Magnetotransport properties (Hall resistance
and sheet resistance) of (Ga,Mn)Sb with x=0.023. Magnetic field was applied
perpendicular to the sample plane. |
